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    1N307 Price and Stock

    onsemi 1N3070TR

    DIODE GEN PURP 200V 500MA DO35
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    DigiKey 1N3070TR Cut Tape 20,199 1
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    Microchip Technology Inc 1N3070-1

    DIODE GEN PURP 175V 100MA DO7
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    DigiKey 1N3070-1 Bulk 258 1
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    Avnet Americas 1N3070-1 Bulk 22 Weeks 135
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    Microchip Technology Inc 1N3070-1 599 1
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    Onlinecomponents.com 1N3070-1
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    Microchip Technology Inc 1N3070UR-1/TR

    SIGNAL OR COMPUTER DIODE
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    DigiKey 1N3070UR-1/TR Reel 135 135
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    Microchip Technology Inc JANTX1N3070-1

    DIODE GEN PURP 175V 100MA DO7
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    DigiKey JANTX1N3070-1 Bulk 3 1
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    Microchip Technology Inc JANTX1N3070-1
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    CTS Corporation 581N30705DAT

    5.0mm x 3.2mm Surface Mount Stra
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    DigiKey 581N30705DAT Reel 1,000
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    Avnet Americas 581N30705DAT Reel 16 Weeks 1,000
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    1N307 Datasheets (97)

    Part ECAD Model Manufacturer Description Curated Type PDF
    1N307 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N307 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N307 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N307 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N307 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    1N307 Semitronics Germanium Diodes / Germanium Rectifiers Scan PDF
    1N3070 Fairchild Semiconductor General purpose high voltage diode, 200V, 0.6A Original PDF
    1N3070 Microsemi Signal or Computer Diode Original PDF
    1N3070 BKC International 200 V, 250 mW general purpose diode Scan PDF
    1N3070 Crimson Semiconductor SILICON DIODES Scan PDF
    1N3070 Crimson Semiconductor Silicon Diodes Scan PDF
    1N3070 Fairchild Semiconductor High speed high conductance diode. Working inverse voltage 175 V. Scan PDF
    1N3070 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    1N3070 International Semiconductor SWITCHING DIODE Scan PDF
    1N3070 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N3070 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    1N3070 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N3070 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N3070 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N3070 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    1N307 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N3070UR-1

    Abstract: DO-213AA
    Text: FEATURES 1N3070UR-1 • 1N3070UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF• • • • • 19500/169 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION ALSO AVAILABLE AS LL3070 MAXIMUM RATINGS AT 25 °C Operating Temperature:


    Original
    PDF 1N3070UR-1 1N3070UR-1 LL3070 500mW 100mA, 667mA/ MILPRF-19500/169 DO-213AA

    Untitled

    Abstract: No abstract text available
    Text: 1N3070+JANTX Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current100m V(RRM)(V) Rep.Pk.Rev. Voltage200 t(rr) Max.(s) Rev.Rec. Time50n @I(F) (A) (Test Condition)30m @I(R) (A) (Test Condition)30m V(FM) Max.(V) Forward Voltage1.0


    Original
    PDF 1N3070 Current100m Voltage200 Time50n Current100n Current100u StyleDO-35 rrent100u

    Untitled

    Abstract: No abstract text available
    Text: 1N3076 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current200m @Temp (øC) (Test Condition)150# V(RRM)(V) Rep.Pk.Rev. Voltage250 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.10 V(FM) Max.(V) Forward Voltage1.5 @I(FM) (A) (Test Condition)200m @Temp. (øC) (Test Condition)150#


    Original
    PDF 1N3076 Current200m Voltage250 Current500u StyleDO-12

    Untitled

    Abstract: No abstract text available
    Text: 1N307 Diodes Germanium Diode Military/High-RelN I O Max.(A) Output Current50m V(RRM)(V) Rep.Pk.Rev. Voltage125 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.500m V(FM) Max.(V) Forward Voltage1 @I(FM) (A) (Test Condition)100m I(RM) Max.(A) Reverse Current5u @V(R) (V)(Test Condition)10


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    PDF 1N307 Current50m Voltage125 Current90u

    Untitled

    Abstract: No abstract text available
    Text: 1N3070-1+JAN Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current100m V(RRM)(V) Rep.Pk.Rev. Voltage200 t(rr) Max.(s) Rev.Rec. Time50n @I(F) (A) (Test Condition)30m @I(R) (A) (Test Condition)30m V(FM) Max.(V) Forward Voltage1.0


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    PDF 1N3070-1 Current100m Voltage200 Time50n Current100n Current100u StyleDO-35 rrent100u

    Untitled

    Abstract: No abstract text available
    Text: 1N3072 Silicon Rectifier 7.50 Diodes Silicon Rectifiers General-Purpose American Micr. Page 1 of 1 Enter Your Part # Home Part Number: 1N3072 Online Store 1N3072 Diodes Silicon Rectifier Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics


    Original
    PDF 1N3072 1N3072 DO-12 com/1n3072

    Untitled

    Abstract: No abstract text available
    Text: 1N3074 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current200m @Temp (øC) (Test Condition)150# V(RRM)(V) Rep.Pk.Rev. Voltage150 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.10 V(FM) Max.(V) Forward Voltage1.5 @I(FM) (A) (Test Condition)200m @Temp. (øC) (Test Condition)150#


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    PDF 1N3074 Current200m Voltage150 Current500u StyleDO-12

    Untitled

    Abstract: No abstract text available
    Text: 1N3078 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current200m @Temp (øC) (Test Condition)150# V(RRM)(V) Rep.Pk.Rev. Voltage350 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.10 V(FM) Max.(V) Forward Voltage1.5 @I(FM) (A) (Test Condition)200m @Temp. (øC) (Test Condition)150#


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    PDF 1N3078 Current200m Voltage350 Current500u StyleDO-12

    Untitled

    Abstract: No abstract text available
    Text: 1N3077 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current200m @Temp (øC) (Test Condition)150# V(RRM)(V) Rep.Pk.Rev. Voltage300 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.10 V(FM) Max.(V) Forward Voltage1.5 @I(FM) (A) (Test Condition)200m @Temp. (øC) (Test Condition)150#


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    PDF 1N3077 Current200m Voltage300 Current500u StyleDO-12

    Untitled

    Abstract: No abstract text available
    Text: 1N3073 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current200m @Temp (øC) (Test Condition)150# V(RRM)(V) Rep.Pk.Rev. Voltage100 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.10 V(FM) Max.(V) Forward Voltage1.5 @I(FM) (A) (Test Condition)200m @Temp. (øC) (Test Condition)150#


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    PDF 1N3073 Current200m Voltage100 Current500u StyleDO-12

    Untitled

    Abstract: No abstract text available
    Text: FEATURES • 1N3070UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF- 1N3070UR- 1 • • • • • 19500/169 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION ALSO AVAILABLE AS LL3070 MAXIMUM RATINGS AT 25 °C Operating Temperature:


    Original
    PDF 1N3070UR-1 1N3070UR- LL3070 500mW 100mA, 667mA/Â MILPRF-19500/169 DO-213AA

    1N3070

    Abstract: 1N3070 DIODE DATASHEET
    Text: 1N3070 1N3070 DO-35 COLOR BAND DENOTES CATHODE Small Signal Diode Absolute Maximum Ratings * TA = 25°C unless otherwise noted Symbol VRRM Parameter Maximum Repetitive Reverse Voltage Value 200 Units V IF AV IFSM Average Rectified Forward Current 500 mA Non-repetitive Peak Forward Surge Current


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    PDF 1N3070 DO-35 1N3070 1N3070 DIODE DATASHEET

    1N3070

    Abstract: DIODE 1N3070
    Text: 1N3070 High Speed High Conductance Diode. Working Inverse Voltage 175 V. 1.35 Dio. Page 1 of 1 Enter Your Part # Home Part Number: 1N3070 Online Store 1N3070 Diodes High Speed High Conductance D iode. Working Inverse Transistors Voltage 175 V. Integrated Circuits


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    PDF 1N3070 1N3070 DO-35 com/1n3070 DIODE 1N3070

    Untitled

    Abstract: No abstract text available
    Text: 1N3070-1 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current100m V(RRM)(V) Rep.Pk.Rev. Voltage200 t(rr) Max.(s) Rev.Rec. Time50n @I(F) (A) (Test Condition)30m @I(R) (A) (Test Condition)30m V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)100m


    Original
    PDF 1N3070-1 Current100m Voltage200 Time50n Current100n Current100u StyleDO-35

    Untitled

    Abstract: No abstract text available
    Text: 1N3070+JAN Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current100m V(RRM)(V) Rep.Pk.Rev. Voltage200 t(rr) Max.(s) Rev.Rec. Time50n @I(F) (A) (Test Condition)30m @I(R) (A) (Test Condition)30m V(FM) Max.(V) Forward Voltage1.0


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    PDF 1N3070 Current100m Voltage200 Time50n Current100n Current100u StyleDO-35

    DSAIH0002547

    Abstract: No abstract text available
    Text: B IC C I N T E R N A T I O N A L 3DE D • 1171143 0G00355 0 - ^ C S - O 0! BKC INTERNATIONAL ELECTRONICS, INC. 6 L A K E STREET, LAWRENCE, MA 01841 TEL. NO. 508 6 8 1 - 0 3 9 2 TYPE 1N3070 (SILICON) M A X I M U M RATI N G STORAGE TEMPERATURE: -¿>5C TO + 2 0 0 C


    OCR Scan
    PDF 0G00355 1N3070 250mW 100mA 30-30mA DSAIH0002547

    MMBD1502A

    Abstract: 1N914 SOT-23 T0236 FOH300 MMBD1402 1n4148 LL34 1N3070 FOH300A 1N485B 1N486B
    Text: hot a m bSDHBD D03TS07 423 NATL VRRM Irrm Volts Min Device 250 1N486B BAV21 1N3070 1N459 1N459A 1N485B 1N4938 1S923 BAS21 BAV20 FDH400 MMBD1401 MMBD1402 MMBD1403 MMBD1404 MMBD1405 MMBD1501A MMBD1502A MMBD1503A MMBD1504A MMBD1505A 1N3595 1N458A 1N6099 200


    OCR Scan
    PDF 1N486B D0-35 BAV21 DO-35 1N3070 1N459 1N459A MMBD1502A 1N914 SOT-23 T0236 FOH300 MMBD1402 1n4148 LL34 FOH300A 1N485B

    1N4938

    Abstract: FDH444 1N3070 1N462A 1N463A FDH400 High voltage diodes
    Text: Switching Diodes High Voltage Diodes G lass Package V RRM D evice No. P ackage No. (V) (nA) Min Max @ V V F R (V) (V) @ 'f (m A) C ‘rr (PF) (ns) Te st C ond. P roce ss No. Max Max 1N3070 DO-35 200 100 175 1 100 5 50 (Note 1) 1J 1N4938 DO-35 200 100 175


    OCR Scan
    PDF 1N3070 DO-35 1N4938 FDH400 FDH444 1N462A 1N463A High voltage diodes

    Untitled

    Abstract: No abstract text available
    Text: MICROSEMI CORP/ UATERTOlilN SDE COMPUTER DIODE T> m D01E3bQ 25G • U N I T 1N3070; JAN, JANTX 1N3070 1N4938; JAN, JANTX 1N4938 y y i v i r u I CIV U I K J U U . Switching ^ <r 9 i ABSOLUTE MAXIMUM RATINGS, AT 25°C Reverse Breakdown Voltage . 200V


    OCR Scan
    PDF D01E3bQ 1N3070; 1N3070 1N4938; 1N4938 150mA 500mA 250mW 100/jAdc 175Vdc

    IN3070

    Abstract: 1N3070 IN3070 diode DIODE 1N3070
    Text: 1N3070 COMPUTER DIODE High Voltage Switching FEATURES • Metallurgical Bond • Planar Passivated • High Voltage • DO-35 Package DESCRIPTION This series offers M etallurgical Bonding and is specifically designed for high voltage applications. ABSOLUTE MAXIMUM RATINGS, AT 25 °C


    OCR Scan
    PDF 1N3070 DO-35 200mAdc 500mA T-r-100 IN3070 1N3070 IN3070 diode DIODE 1N3070

    cho bond 1029

    Abstract: No abstract text available
    Text: TYPE 1N3070 SILICON SWITCHING DIODE B U L L E T I N N O . DL-S 7 3 9 3 7 0 , N O V E M B E R 1 9 6 6 - R E V I S E D M A R C H 1 973 H IG H -V O L T A G E SW ITCH IN G D IO D E Rugged Double-Plug Construction Electrically Equivalent to 1N4938 DO-35 * m echanical d ata


    OCR Scan
    PDF 1N3070 1N4938 DO-35) cho bond 1029

    1N4939

    Abstract: 1N4938 1N3070 1N4938 JANTX
    Text: COMPUTER DIODE 1N3070; JAN, JANTX 1N3070 1N4938; JAN, JANTX 1N4938 Switching ABSOLUTE MAXIMUM RATINGS, AT 25«C FEATURES Reverse Breakdown Voltage . 2 0 0 V Steady-State Forward Current at or below 25°C Free Air T em p era tu re.1 5 0 m A


    OCR Scan
    PDF 1N3070; 1N3070 1N4938; 1N4938 175Vdc 100/yAdc 1N3070 1N4939 1N4938 1N4938 JANTX

    1N3070

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS INC T3 ]> 05D433A 0DG37T1 3 • T -9 1 -0 1 PROCESS TSO Process TSO High-Speed Switching Diode P ro ce ss T S O produces a gold-doped silicon epi­ taxial diode with 1N3070 high-speed sw itching char­ acteristics. It has a typical breakdow n-voltage rating


    OCR Scan
    PDF 05DM33fl DDG37T1 T-91-Ã 1N3070 100mA

    Untitled

    Abstract: No abstract text available
    Text: Switching Diodes High Voltage Diodes v Device No. Package No. Glass Package *R R M •r (V) (nA) Min Max V F @ V R (V) (V) Min @ Max 'f (mA) c *n (pF) (ns) Max Max Test Cond. Process No. 1N3070 DO-35 200 100 175 1 100 5 50 (Note 1) 1J 1N4938 DO-35 200 100


    OCR Scan
    PDF 1N3070 DO-35 1N4938 FDH400 FDH444