MT1115
Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir
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108th
MT1115
2N3303
FPT100 phototransistor
UA739 equivalent
transistor bc 554 pnp
mt1039
ft2974
fairchild 2N3565
FD6666 diode
transistor npn Epitaxial Silicon SST 117
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SO16 weight
Abstract: No abstract text available
Text: I V PR O IEK D E V IC E S <§ TVS Low Capacitance Surface M o un t □ ¡ode A rra v Engineered solutions fo r the transient environment S M 1BLC Series DESCRIPTION . IEC 801 Compatible •Ah j This Bidirectional Diode Array TVS family is a series of low capacitance silicon transient suppressors
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transistor SMD LOA
Abstract: 9915 transistor TD13005D 1b.1 smd transistor ir 9911
Text: Temic Semiconductors TD13004D • TD13005D Silicon NPN High Voltage Switching Transistor Features Monolithic integrated C-E-free-wheel diode HIGH SPEED technology Planar passivation Very short switching times Very low switching losses Very low dynamic saturation
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TD13004D
TD13005D
TD13005D
TD13004D
transistor SMD LOA
9915 transistor
1b.1 smd transistor
ir 9911
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1bl3
Abstract: diode 1bl3 on 1bl3 MBRS130LT3 1BL3 marking code MBRS130LT3G MBRS130LT3G ON SEMICONDUCTOR
Text: MBRS130LT3 Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS130LT3
MBRS130LT3/D
1bl3
diode 1bl3
on 1bl3
MBRS130LT3
1BL3 marking code
MBRS130LT3G
MBRS130LT3G ON SEMICONDUCTOR
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diode 1bl3
Abstract: 1bl3 1BL3 marking code MBRS130LT3 diode+1bl3 on 1bl3
Text: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package . . . Employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State- of- the- art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS130LT3
diode 1bl3
1bl3
1BL3 marking code
MBRS130LT3
diode+1bl3
on 1bl3
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diode 1bl3
Abstract: 1bl3 on 1bl3 marking code 1BL3 1BL3 marking code MBRS130LT3 150 1BL3 MBRS130LT3 marking CASE 403A
Text: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package . . . Employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS130LT3
r14525
MBRS130LT3/D
diode 1bl3
1bl3
on 1bl3
marking code 1BL3
1BL3 marking code
MBRS130LT3
150 1BL3
MBRS130LT3 marking
CASE 403A
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diode 1bl3
Abstract: 1bl3 marking code 1BL3 1BL3 marking code MBRS130LT3 150 1BL3
Text: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package . . . Employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS130LT3
diode 1bl3
1bl3
marking code 1BL3
1BL3 marking code
MBRS130LT3
150 1BL3
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1BL3 marking code
Abstract: MBRS130LT3G SBRS8130LT3G 1bl3 diode MBRS130LT 1BL3
Text: MBRS130LT3G, SBRS8130LT3G Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS130LT3G,
SBRS8130LT3G
MBRS130LT3/D
1BL3 marking code
MBRS130LT3G
1bl3 diode
MBRS130LT
1BL3
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Untitled
Abstract: No abstract text available
Text: MBRS130LT3G, SBRS8130LT3G Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS130LT3G,
SBRS8130LT3G
MBRS130LT3/D
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1bl3 motorola
Abstract: diode 1bl3 1BL3 diode 1bl3 141 MBRS130LT3 MBRS130LT3 marking 403A-03 1BL3 141 schottky power rectifier MOTOROLA
Text: MOTOROLA Order this document by MBRS130LT3/D SEMICONDUCTOR TECHNICAL DATA Schottky Power Rectifier MBRS130LT3 Surface Mount Power Package . . . Employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with
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MBRS130LT3/D
MBRS130LT3
1bl3 motorola
diode 1bl3
1BL3
diode 1bl3 141
MBRS130LT3
MBRS130LT3 marking
403A-03
1BL3 141
schottky power rectifier MOTOROLA
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diode 1bl3
Abstract: MBRS130LT3
Text: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS130LT3
MBRS130LT3/D
diode 1bl3
MBRS130LT3
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MBRS130LT3
Abstract: 403A-03
Text: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS130LT3
MBRS130LT3/D
MBRS130LT3
403A-03
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diode 1bl3
Abstract: 1bl3 MBRS130LT3 5M MARKING CODE SCHOTTKY DIODE marking code 1BL3 schottky diode SMB marking code 120 AS 031 1BL3 544 MBRS130LT3G on 1bl3
Text: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS130LT3
diode 1bl3
1bl3
MBRS130LT3
5M MARKING CODE SCHOTTKY DIODE
marking code 1BL3
schottky diode SMB marking code 120
AS 031
1BL3 544
MBRS130LT3G
on 1bl3
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diode 1bl3
Abstract: MBRS130LT3
Text: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS130LT3
MBRS130LT3/D
diode 1bl3
MBRS130LT3
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diode 1BL
Abstract: U17E
Text: •I Bi CONTROLLED AVALANCHE DIODE U17 Unit in mm inch ■4$ « ■FEATURES • T ra n sie n t surge voltag e protection. • Diffused-junction. G lass passivated encapsulated. and ■ABSOLUTE MAXIMUM RATINGS Items Repetitive Peak Reverse Voltage Peak Reverse Power
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10/is\
25mon
diode 1BL
U17E
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Buf725d
Abstract: transistor BUF725D
Text: T e m ic BUF725D Semiconductors Silicon NPN High Voltage Switching Transistor Features • • • • • • • • • • Monolithic integrated C-E-free-wheel diode Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate
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BUF725D
D-74025
18-Jul-97
Buf725d
transistor BUF725D
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403A-03
Abstract: diode 1bl3 1BL3 1bl3 motorola
Text: MOTOROLA Order this document by MBRS130LT3/D SEMICONDUCTOR TECHNICAL DATA S ch o ttky Pow er R e ctifier MBRS130LT3 Surface Mount Power Package . . . Employs the S chottky Barrier principle in a large area m e ta l-to -s ilic o n power diode. S ta te -o f-th e -a rt geom etry features epitaxial construction with
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MBRS130LT3/D
03A-03
403A-03
diode 1bl3
1BL3
1bl3 motorola
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sl5501
Abstract: No abstract text available
Text: Optoisolator Specifications SL5500, SL5501 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e SL5500-SL5501 c o n sis ts o f a g a lliu m a rs e n id e , in f r a r e d e m ittin g d io d e c o u p le d w ith a s ilic o n p h o to tr a n s is to r in a d u a l in -lin e p a ck a g e .
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SL5500,
SL5501
SL5500-SL5501
C96-551
SL5500-SL5501
sl5501
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1h31
Abstract: 5961 b sj IN3164 1N3164 1N3168 1N3170 1N3172 1N3174 1N3176 1N3177
Text: MIL SPECS IC| GOODIES 00023^10 | MI L - S -19 b 0 0 / 2 1 1 r5 AMEv',-'7lfT ? 23 Fubrii^-v i3S5 SUPERS-L^C AMENDM^'-T 2 October MILITARY 2 i9 3 , SPECIFICATION S E M I C O N D U C T O R DE VICE, DIODE, S IL ICO N, POWER RE C T I F I E R T Y P E S 1 N 3 1 6 4 , 1 N 3 1 6 8 , IN 31 7 0 , 1 N 3 1 7 2 , 1 N 3 1 7 4 , 1 N 3 1 7 5 ,
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0Q0012S
-1Q600/
1N3164,
1N3168,
1N3170,
1N3172,
1N3174,
1W3175.
1N3176,
1N3177,
1h31
5961 b sj
IN3164
1N3164
1N3168
1N3170
1N3172
1N3174
1N3176
1N3177
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b=JE D bbS3*1Bl QQBDbDS fiT? « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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O220AB
BUK453-100A/B
BUK453
-100A
bb53T31
Joi777
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Kenwood
Abstract: delta sigma modulation and demodulation Delta ac servo motor TDA7522 TDA7473 TQFP80 512x16Bit TDA7521 56MIPS adaptive delta demodulator
Text: TDA7522 Digital Servo & Decoder PRODUCT PREVIEW • BUILT IN 8Bit MICROCONTROLLER STANDARD ST7 with: – 24 KByte ROM available for ST7 & Servo-Audio DSP – 1024Byte RAM, including 128byte stack – 4KByte RAM for CD-Text memory (for 1block) – Built in R-W subcode buffer (Max. 144Byte
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TDA7522
1024Byte
128byte
144Byte
16bit
TQFP80
Kenwood
delta sigma modulation and demodulation
Delta ac servo motor
TDA7522
TDA7473
TQFP80
512x16Bit
TDA7521
56MIPS
adaptive delta demodulator
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TDA7522
Abstract: delta sigma modulation and demodulation 50MIPS TDA7521 laser disk spindle motor controller Register TQFP80 STMicroelectronics marking ROM code name c program to interface imu to microcontroller kenwood equalizer crossover
Text: TDA7522 Digital Servo & Decoder PRODUCT PREVIEW • BUILT IN 8Bit MICROCONTROLLER STANDARD ST7 with: – 24 KByte ROM available for ST7 & Servo-Audio DSP – 1024Byte RAM, including 128byte stack – 4KByte RAM for CD-Text memory (for 1block) – Built in R-W subcode buffer (Max. 144Byte
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TDA7522
1024Byte
128byte
144Byte
16bit
TQFP80
TDA7522
delta sigma modulation and demodulation
50MIPS
TDA7521
laser disk spindle motor controller
Register
TQFP80
STMicroelectronics marking ROM code name
c program to interface imu to microcontroller
kenwood equalizer crossover
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Untitled
Abstract: No abstract text available
Text: TDA7522 Digital Servo & Decoder PRODUCT PREVIEW • BUILT IN 8Bit MICROCONTROLLER STANDARD ST7 with: - 24 KByte ROM available for ST7 & Servo-Audio DSP - 1024Byte RAM, including 128byte stack - 4KByte RAM for CD-Text memory (for 1block) - Built in R-W subcode buffer (Max. 144Byte
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TDA7522
1024Byte
128byte
144Byte
16bit
TQFP80
1024x1r
TQFP80
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MG25N2YS1
Abstract: mg25n2
Text: TOSHIBA O I S C R E T E / O P T O J _ ^0 9 0 9 7 2 5 0 TO SH IBA D IS C R E T E / O P T O TO SH IBA P E I ‘ìCHTgSO 0 0 1blfc,5 D I 90D 16165 SEMICONDUCTOR -f~33~27 TOSHIBA GTR MODULI; MG25N2YS1 TECHNICAL DATA SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS.
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MG25N2YS1
\S03G05
EGA-MG25K
MG25N2YS1
mg25n2
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