c8a zener
Abstract: CMPZ5267B CMPZ5221B CMPZ5222B CMPZ5223B CMPZ5224B CMPZ5225B CMPZ5226B CMPZ5227B CMPZ5228B
Text: Central CMPZ5221B THRU CMPZ5267B TM Semiconductor Corp. SURFACE MOUNT 350mW SILICON ZENER DIODE 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPZ5221B Series silicon zener diode is a high quality voltage regulator for use in industrial, commercial,
|
Original
|
CMPZ5221B
CMPZ5267B
350mW
OT-23
CMPZ5262B*
CMPZ5263B*
CMPZ5264B*
CMPZ5265B*
CMPZ5266B*
c8a zener
CMPZ5267B
CMPZ5221B
CMPZ5222B
CMPZ5223B
CMPZ5224B
CMPZ5225B
CMPZ5226B
CMPZ5227B
CMPZ5228B
|
PDF
|
diode ZENER C8S
Abstract: c8a zener CMPZ5221B CMPZ5222B CMPZ5223B CMPZ5224B CMPZ5225B CMPZ5226B CMPZ5227B CMPZ5228B
Text: Central CMPZ5221B THRU CMPZ5261B TM Semiconductor Corp. 350 mW ZENER DIODE 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPZ5221B Series Silicon Zener Diode is a high quality voltage regulator for use in industrial, commercial, entertainment and computer applications. Higher
|
Original
|
CMPZ5221B
CMPZ5261B
OT-23
CMPZ5222B
CMPZ5223B
CMPZ5255B
CMPZ5256B
CMPZ5257B
diode ZENER C8S
c8a zener
CMPZ5221B
CMPZ5222B
CMPZ5223B
CMPZ5224B
CMPZ5225B
CMPZ5226B
CMPZ5227B
CMPZ5228B
|
PDF
|
IRG4BC15UD
Abstract: No abstract text available
Text: PD - 94082A IRG4BC15UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery antiparallel diode
|
Original
|
4082A
IRG4BC15UD
from10
O-220AB
O-220AB
IRG4BC15UD
|
PDF
|
IRG4BC15UD
Abstract: No abstract text available
Text: PD - 94082A IRG4BC15UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery antiparallel diode
|
Original
|
4082A
IRG4BC15UD
from10
O-220AB
O-220AB
IRG4BC15UD
|
PDF
|
bzx55c
Abstract: diode 6v8a DIODE BZX55c bzx55c 12v 6v8a BZX55C 18 EQUIVALENT BZX55C 9V1 1 BZX55C datasheet diode 6V8C zener BZX55c 4v7
Text: BZX55C-BS SERIES 4.7V to 36V SILICON PLANAR ZENER DIODE FEATURES * Zener Voltage Range 4.7 to 36 Volts * DO-35 Glass Axial Package * Best Suited For Industrial, Military and Space Applications. DO-35 * The Glass Passivated Diode Chip in The Hermetically Sealed
|
Original
|
BZX55C-BS
DO-35
DO-35
bzx55c
diode 6v8a
DIODE BZX55c
bzx55c 12v
6v8a
BZX55C 18 EQUIVALENT
BZX55C 9V1 1
BZX55C datasheet
diode 6V8C
zener BZX55c 4v7
|
PDF
|
IRF530S
Abstract: diode code T2
Text: PD -95564 IRG4BC20MD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Rugged: 10µsec short circuit capable at VGS=15V • Low VCE on for 4 to 10kHz applications • IGBT Co-packaged with ultra-soft-recovery antiparallel diode
|
Original
|
IRG4BC20MD-SPbF
10kHz
10kHz)
EIA-418.
IRF530S
diode code T2
|
PDF
|
ST T4 3660
Abstract: 035H IRFPE30 IRG4PH40UD2-E TO247AD package marking GC diode induction cooking circuits induction cooking
Text: PD - 96781A IRG4PH40UD2-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use in
|
Original
|
6781A
IRG4PH40UD2-E
200kHz
O-247AD
ST T4 3660
035H
IRFPE30
IRG4PH40UD2-E
TO247AD package
marking GC diode
induction cooking circuits
induction cooking
|
PDF
|
zener 6c2
Abstract: sot-23 Marking 8C2 6c2 diode 5B1 zener diode sot-23 Diode SOT-23 marking 27C 5c1 zener diode SOT23 MARKING 5b1 27BSB 5B1 IR BZX84C
Text: BZX84C-BS SERIES 4.7V to 36V SILICON PLANAR VOLTAGE REGULATOR DIODE FEATURES * Zener Voltage Range 4.7 to 36 Volts * SOT-23 Package * Low Voltage General Purpose Voltage Regulator Diode SOT-23 MECHANICAL DATA * * * * * .052 1.325 Case: Molded plastic Epoxy: UL 94V-O rate flame retardant
|
Original
|
BZX84C-BS
OT-23
OT-23
MIL-STD-202E
zener 6c2
sot-23 Marking 8C2
6c2 diode
5B1 zener diode sot-23
Diode SOT-23 marking 27C
5c1 zener diode
SOT23 MARKING 5b1
27BSB
5B1 IR
BZX84C
|
PDF
|
Current limiting diodes
Abstract: staircase generator circuit PCI9030 N-Channel jfet 100V depletion CCLH080 CCLH150 ccl0035-ccl5750
Text: 49 Semiconductor Practical Applications of Current Limiting Diodes Edited by Aimee Kalnoskas, Editor-In-Chief by Sze Chin, Central Semiconductor Corp. he current limiting diode CLD or current regulating diode (CRD) has been available since the early 1960’s. Unfortunately, despite its simplicity and distinct advantages over conventional
|
Original
|
SHC5320
Current limiting diodes
staircase generator circuit
PCI9030
N-Channel jfet 100V depletion
CCLH080
CCLH150
ccl0035-ccl5750
|
PDF
|
CMPZ5267B
Abstract: CMPZ5263B
Text: CMPZ5221B THRU CMPZ5267B w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON ZENER DIODE 350mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPZ5221B Series silicon zener diode is a high quality voltage regulator for use in industrial, commercial,
|
Original
|
CMPZ5221B
CMPZ5267B
350mW,
CMPZ5221B
OT-23
CMPZ5245B
CMPZ5246B
CMPZ5247B
CMPZ5248B
CMPZ5249B
CMPZ5267B
CMPZ5263B
|
PDF
|
Zener c8v
Abstract: c8a zener Zener c8r CMPZ5267B marking code 81R CMPZ5255B CMPZ5222B CMPZ5223B CMPZ5224B CMPZ5225B
Text: CMPZ5221B THRU CMPZ5267B w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON ZENER DIODE 350mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPZ5221B Series silicon zener diode is a high quality voltage regulator for use in industrial, commercial,
|
Original
|
CMPZ5221B
CMPZ5267B
350mW,
CMPZ5221B
OT-23
Zener c8v
c8a zener
Zener c8r
CMPZ5267B
marking code 81R
CMPZ5255B
CMPZ5222B
CMPZ5223B
CMPZ5224B
CMPZ5225B
|
PDF
|
TB-17
Abstract: Si4642DY Si4642DY-T1-E3 74430
Text: New Product Si4642DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES • SkyFET Monolithic TrenchFET Power PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.00375 at VGS = 10 V 34 0.0047 at VGS = 4.5 V 30 VDS (V) 30 Qg (Typ) MOSFET and Schottky Diode
|
Original
|
Si4642DY
Si4642DY-T1-E3
08-Apr-05
TB-17
74430
|
PDF
|
Super-247 Package
Abstract: IRG4PSC71UD
Text: PD - 91682A IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than
|
Original
|
1682A
IRG4PSC71UD
Super-247
O-247
Super-247 Package
IRG4PSC71UD
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Data Sheet AEC-Q101 Qualified Zener Diode EDZFH5.6B Land size figure Unit : mm Dimensions (Unit : mm) Applications Constant voltage control 0.8±0.05 0.12±0.05 0.6 0.8 Construction Silicon epitaxial planer 1.6±0.1 1.2±0.05 1.7 Features
|
Original
|
AEC-Q101
OD-523
SC-79
R1120A
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: Data Sheet AEC-Q101 Qualified Zener Diode EDZFH6.2B Land size figure Unit : mm Dimensions (Unit : mm) Applications Constant voltage control 0.8±0.05 0.12±0.05 0.6 0.8 Construction Silicon epitaxial planer 1.6±0.1 1.2±0.05 1.7 Features
|
Original
|
AEC-Q101
OD-523
SC-79
R1120A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SMB5913B~SMB5942B Zener diode Features 1. For surface mounted applications 2. Low zener impedance 3. Low regulation factor 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value
|
Original
|
SMB5913B
SMB5942B
1-Apr-2006
DO-214AA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SMA5913B~SMA5940B Zener diode Features 1. For surface mounted applications 2. Low zener impedance 3. Low regulation factor 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value
|
Original
|
SMA5913B
SMA5940B
1-Jul-2004
DO-214AC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Data Sheet AEC-Q101 Qualified Zener Diode EDZ +3.9B Applications Constant voltage control Land size figure Unit : mm) Dimensions (Unit : mm) 0.8±0.05 0.12±0.05 0.6 0.8 Construction Silicon epitaxial planer 1.6±0.1 1.2±0.05 1.7 Features
|
Original
|
AEC-Q101
OD-523
SC-79
dissipat140
10pcs
R1120A
|
PDF
|
transistor c295
Abstract: No abstract text available
Text: bitemational pd-9.1120 jjjg Rectifier_IRGPH50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features VCES= 1200V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes
|
OCR Scan
|
IRGPH50FD2
10kHz)
O-247AC
transistor c295
|
PDF
|
IRGPC40FD2
Abstract: ge c122 transistor c117
Text: hrtemational pd-smus Big Rectifier_ IRGPC40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT V ces = 600V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes
|
OCR Scan
|
IRGPC40FD2
10kHz)
GPC40FD2
O-247AC
554S2
IRGPC40FD2
ge c122
transistor c117
|
PDF
|
IRG4BC20KD
Abstract: IGBT IRG4BC20KD IRGBC20KD2 transistor iqr
Text: PD -9.1509 International JQR Rectifier IRG4BC20KD PREUMNAHY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz . and Short
|
OCR Scan
|
IRG4BC20KD
T0220A8
IRG4BC20KD
IGBT IRG4BC20KD
IRGBC20KD2
transistor iqr
|
PDF
|
CD4518BC
Abstract: 5995 5v to 10v CD4520Bc 74LS CD4518B CD4518BM CD4520B CD4520BM
Text: C D 4 5 18 B M /C D 4 5 18BC, C D 4520B M /C D 4520B C Dual Synchronous Up C ounters G eneral Description cleared by a high level on the RESET line. All inputs are protected against static discharge by diode clamps to both V qd and Vss- The CD4518BM/CD4518BC dual BCD counter and the
|
OCR Scan
|
CD4518BM/CD4518BC,
CD4520BM/CD4520BC
CD4518BM/CD4518BC
54C/74C
AN-90.
TL/F/5995-5
CD4518BC
5995
5v to 10v
CD4520Bc
74LS
CD4518B
CD4518BM
CD4520B
CD4520BM
|
PDF
|
transistor C618
Abstract: c618 diode c617 transistor
Text: International jajRectffier_ IRGB420UD2 p d INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE -# .« » UltraFast CoPack IGBT Features V ces = 500V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes
|
OCR Scan
|
IRGB420UD2
O-22QAB
transistor C618
c618 diode
c617 transistor
|
PDF
|
IRG4BC20KD-S
Abstract: No abstract text available
Text: PD-9.1598 International IGR Rectifier PRELIMINARY IRG4BC20KD-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short
|
OCR Scan
|
IRG4BC20KD-S
IRG4BC20KD-S
|
PDF
|
