Untitled
Abstract: No abstract text available
Text: VS-10BQ015HM3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 1.0 A FEATURES Cathode Anode PRODUCT SUMMARY Package SMB IF AV 1.0 A VR 15 V VF at IF 0.21 V IRM 35 mA at 100 °C TJ max. 125 °C Diode variation Single die EAS 1.0 mJ
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VS-10BQ015HM3
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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OZ 9983
Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —
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MBRB3030CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
OZ 9983
mbr3045pt transistor
940 629 MOTOROLA 220
Motorola marking code K 652 TO-220
MUR3030
TRANSISTOR BC 456
Diode Marking 1N4007 Motorola
1N2069
A14F diode
BYV33-45
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1n5822 trr
Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRD1035CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
1n5822 trr
A14F diode
FR105 diode
MR850
diode A14A
BYV27 200 TAP
LT2A02
MBR3100 0630
1N4007 sod-123
SES50
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mur1650
Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and
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MBRB1045
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
mur1650
T4 SOD-123 1N4004
MR2510
1N2069
SES5001
mur420 equivalent
CT PR1504
equivalent for fr302 diode
mur 460 switch
diode A14A surface mount
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FE16B
Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —
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MBRP60035CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
FE16B
mbr3045pt transistor
FR102 SOD-123
1N4007 sod-123
BYV43-45
BYV19-45
MUR1660CT equivalent
MUR460 BL
FEP16DT 0032
mur420 equivalent
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PK MUR 460
Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,
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MBR340
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
PK MUR 460
pk mur460
PK MUR460 1110
gi756 diode
carrier 30bq015
USD1120
0525 Transient Voltage Suppressors
diode A14A surface
SS14 SOD123
MBRD360
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MR2835S equivalent
Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected
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MBR6045PT
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
MR2835S equivalent
A14F diode
1n5404 diode
FE16A
MUR860 equivalent
MUR1620CT
MUR420 diode
usd745c equivalent
MBRD360
PR1502
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equivalent components of diode 1N5399
Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected
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MBR6045WT
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
equivalent components of diode 1N5399
diode ses5001
6A10 BL diode
equivalent for fr302 diode
equivalent components of diode her104
fe8b diode
FE8D
gi756 diode
A14F diode
MUR420 diode
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VS-10BQ015
Abstract: 10BQ015PbF
Text: VS-10BQ015PbF Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES Cathode • Ultralow forward voltage drop • Optimized for OR-ing applications • Guard ring for enhanced ruggedness and long term reliability • 125 °C TJ operation VR < 5 V • High frequency operation
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VS-10BQ015PbF
J-STD-020,
2002/95/EC
DO-214AA)
VS-10BQ015PbF
18-Jul-08
VS-10BQ015
10BQ015PbF
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MARKING V1C
Abstract: VS-10BQ015PBF VS-10BQ015 10BQ015PbF
Text: VS-10BQ015PbF Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES Cathode • Ultralow forward voltage drop • Optimized for OR-ing applications • Guard ring for enhanced ruggedness and long term reliability • 125 °C TJ operation VR < 5 V • High frequency operation
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VS-10BQ015PbF
J-STD-020,
2002/95/EC
DO-214AA)
11-Mar-11
MARKING V1C
VS-10BQ015PBF
VS-10BQ015
10BQ015PbF
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VS-10BQ015
Abstract: 10BQ015PbF
Text: VS-10BQ015PbF Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES Cathode • Ultralow forward voltage drop • Optimized for OR-ing applications • Guard ring for enhanced ruggedness and long term reliability • 125 °C TJ operation VR < 5 V • High frequency operation
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Original
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VS-10BQ015PbF
J-STD-020,
2002/95/EC
DO-214AA)
VS-10BQ015PbF
11-Mar-11
VS-10BQ015
10BQ015PbF
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10BQ015PBF
Abstract: No abstract text available
Text: VS-10BQ015PbF Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES Cathode • Ultralow forward voltage drop • Optimized for OR-ing applications • Guard ring for enhanced ruggedness and long term reliability • 125 °C TJ operation VR < 5 V • High frequency operation
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Original
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VS-10BQ015PbF
J-STD-020,
2002/95/EC
DO-214AA)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
10BQ015PBF
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VS-10BQ015
Abstract: 10BQ015PbF
Text: VS-10BQ015PbF Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES Cathode • Ultralow forward voltage drop • Optimized for OR-ing applications • Guard ring for enhanced ruggedness and long term reliability • 125 °C TJ operation VR < 5 V • High frequency operation
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Original
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VS-10BQ015PbF
J-STD-020,
2002/95/EC
DO-214AA)
VS-10BQ015PbF
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
VS-10BQ015
10BQ015PbF
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10BQ015TRPBF
Abstract: 10BQ015PbF
Text: VS-10BQ015PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 1.0 A FEATURES • Ultralow forward voltage drop • Optimized for OR-ing applications Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • 125 °C TJ operation VR < 5 V
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Original
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VS-10BQ015PbF
J-STD-020,
DO-214AA)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
10BQ015TRPBF
10BQ015PbF
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DIODE IR1C
Abstract: ir1c ir1c 04 10BQ015 AN-994
Text: Bulletin PD-2.396 rev. I 07/04 10BQ015 SCHOTTKY RECTIFIER 1 Amp IF AV = 1 Amp VR = 15V Major Ratings and Characteristics Description/ Features The 10BQ015 surface mount Schottky rectifier has been designed for applications requiring low forward drop and very
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10BQ015
10BQ015
DIODE IR1C
ir1c
ir1c 04
AN-994
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DIODE IR1C
Abstract: 10BQ015PBF ir1c AN-994
Text: Bulletin PD-20782 07/04 10BQ015PbF SCHOTTKY RECTIFIER 1 Amp IF AV = 1.0Amp VR = 15V Major Ratings and Characteristics Description/ Features Characteristics Values Units IF(AV) Rectangular waveform 1.0 A VRRM 15 V IFSM @ tp = 5 µs sine 140 A VF @ 1.0 Apk, TJ=125°C
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PD-20782
10BQ015PbF
10BQ015PbF
DIODE IR1C
ir1c
AN-994
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MARKING V1C
Abstract: 10BQ015PbF
Text: 10BQ015PbF Vishay High Power Products Schottky Rectifier, 1.0 A FEATURES • 125 °C TJ operation VR < 5 V • Optimized for OR-ing applications • Ultralow forward voltage drop • High frequency operation Cathode Anode • Guard ring for enhanced ruggedness and long term
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10BQ015PbF
10BQ015PbF
18-Jul-08
MARKING V1C
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10BQ015PBF
Abstract: MARKING V1C VS-10BQ015
Text: VS-10BQ015PbF Vishay High Power Products Schottky Rectifier, 1.0 A FEATURES Cathode • • • • • Anode SMB • • • • PRODUCT SUMMARY IF AV 1.0 A VR 15 V 125 °C TJ operation (VR < 5 V) Optimized for OR-ing applications Ultralow forward voltage drop
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VS-10BQ015PbF
J-STD-020,
2002/95/EC
VS-10BQ015PbF
18-Jul-08
10BQ015PBF
MARKING V1C
VS-10BQ015
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Untitled
Abstract: No abstract text available
Text: 10BQ015PbF Vishay High Power Products Schottky Rectifier, 1.0 A FEATURES • 125 °C TJ operation VR < 5 V Available • Optimized for OR-ing applications RoHS* • Ultra low forward voltage drop COMPLIANT • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term
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10BQ015PbF
10BQ015PbF
18-Jul-08
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10BQ015PBF
Abstract: No abstract text available
Text: 10BQ015PbF Vishay High Power Products Schottky Rectifier, 1.0 A FEATURES • 125 °C TJ operation VR < 5 V • Optimized for OR-ing applications • Ultralow forward voltage drop • High frequency operation Cathode Anode • Guard ring for enhanced ruggedness and long term
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Original
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10BQ015PbF
2002/95/EC
10BQ015PbF
18-Jul-08
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PDF
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Untitled
Abstract: No abstract text available
Text: Bulletin PD-2.396 rev. I 07/04 10BQ015 SCHOTTKY RECTIFIER 1 Amp IF AV = 1 Amp VR = 15V Major Ratings and Characteristics Description/ Features The 10BQ015 surface mount Schottky rectifier has been designed for applications requiring low forward drop and very
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10BQ015
10BQ015
125ded
08-Mar-07
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DIODE IR1C
Abstract: No abstract text available
Text: Bulletin PD-20782 07/04 10BQ015PbF SCHOTTKY RECTIFIER 1 Amp IF AV = 1.0Amp VR = 15V Major Ratings and Characteristics Description/ Features Characteristics Values Units IF(AV) Rectangular waveform 1.0 A VRRM 15 V IFSM @ tp = 5 µs sine 140 A VF @ 1.0 Apk, TJ=125°C
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Original
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PD-20782
10BQ015PbF
10BQ015PbF
08-Mar-07
DIODE IR1C
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PDF
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AN-994
Abstract: 10BQ015PBF JA marking
Text: Bulletin PD-20782 07/04 10BQ015PbF SCHOTTKY RECTIFIER 1 Amp IF AV = 1.0Amp VR = 15V Major Ratings and Characteristics Description/ Features Characteristics Values Units IF(AV) Rectangular waveform 1.0 A VRRM 15 V IFSM @ tp = 5 µs sine 140 A VF @ 1.0 Apk, TJ=125°C
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PD-20782
10BQ015PbF
10BQ015PbF
12-Mar-07
AN-994
JA marking
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PDF
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smd diode f54
Abstract: 18t0045 smd f54 209DMQ 20F0040 209DMQ150 50W005F 15CT0035 smd diode K10 209CMQ150
Text: Other Products from IR Schottky Diode Surface Mount - Discrete 0 .7 7 - 20 Am ps 'F AV @ TC Case Outline >RM@ Rated V r w m Part Number VRRM (A) 1.1 (°C) 10MQ040 00 40 92 (V) 0.51 10MQ060 10MQ090 60 90 0 .77 0 .77 110 110 0.57 0.65 _ _ 7.5 5.0 15MQ040
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OCR Scan
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10MQ040
10MQ060
10MQ090
15MQ040
10BQ015
10BQ040
10BQ060
10BQ100
30BQ015
30BQ040
smd diode f54
18t0045
smd f54
209DMQ
20F0040
209DMQ150
50W005F
15CT0035
smd diode K10
209CMQ150
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