R222 smd
Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
Text: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP
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CA-001175
BA41-00418A
BA62-00194A
BA62-00306A
BA68-40005L
120OHM
143OHM/132MHZ
213OHM/390MHZ,
R222 smd
RA516-1
2007-000162
RA523-1
C627 SOT-23
smd R540
63MIL
d516 gp
SMD R618
SMD C548
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600v 10A ultra fast recovery diode
Abstract: diode Vr 1200v ULTRAFAST 10A 600V SML10SUZ12K
Text: SML10SUZ12K Ultrafast Recovery Diode 1200 Volt, 10 Amp Back of Case Cathode SML 10SUZ12K TECHNOLOGY The planar passivated and standard ultrafast recovery 1 2 diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with
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SML10SUZ12K
10SUZ12K
600v 10A ultra fast recovery diode
diode Vr 1200v
ULTRAFAST 10A 600V
SML10SUZ12K
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BC647
Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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MMBD4148
200MA
OT-23
MBR0540
OD-123
1000MA
DO-214AC
B340A
5245B
225MW
BC647
bc657
C1093
smd diode c644
DIODE SMD c336
BC679
BC625
smd diode C645
smd diode c640
smd diode R645
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77C7
Abstract: 887c 1r12r
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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STGW30N120KD
Abstract: STGWA30N120KD short-circuit rugged IGBT
Text: STGW30N120KD STGWA30N120KD 30 A, 1200 V short circuit rugged IGBT with Ultrafast diode Features • Low on-losses ■ High current capability ■ Low gate charge ■ Short circuit withstand time 10 µs ■ IGBT co-packaged with Ultrafast free-wheeling diode
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STGW30N120KD
STGWA30N120KD
O-247
GW30N120KD
GWA30N120KD
O-247
STGWA30N120KD
short-circuit rugged IGBT
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STGW30N120KD
Abstract: No abstract text available
Text: STGW30N120KD STGWA30N120KD 30 A, 1200 V short circuit rugged IGBT with Ultrafast diode Features • Low on-losses ■ High current capability ■ Low gate charge ■ Short circuit withstand time 10 µs ■ IGBT co-packaged with Ultrafast free-wheeling diode
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STGW30N120KD
STGWA30N120KD
O-247
GW30N120KD
GWA30N120KD
O-247
STGW30N120
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ILA03N60
Abstract: ILB03N60 Q67040-S4627 SDP04S60 Infineon MOSFET 1000V
Text: ILB03N60 ^ LightMOS Power Transistor C • • • • • • • • New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET
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ILB03N60
P-TO-263-3-2
O-263AB)
Q67040-S4627
ILA03N60
ILB03N60
Q67040-S4627
SDP04S60
Infineon MOSFET 1000V
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samsung r540
Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Text: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP
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ZD500
QF500
RHU002N06
200MA
OT-323
F820P
33x33mm
500MHz
K4J52324QC
512Mbit
samsung r540
Samsung R590
R721-R725
C732 SMD
10000NF
R616 R617
R714-R715
samsung r580
b16 r649
Smd q535
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ir54c
Abstract: BAT54C
Text: Preliminary Data Sheet PD-20760 12/01 BAT54C SCHOTTKY DIODE 0.2 Amp 3 2 Major Ratings and Characteristics Characteristics SOT23 Value Units 0.2 A Description/ Features VRRM 30 V IFSM @ tp= 10 ms sine 1.0 A This Schottky barrier diode is designed for high speed switching
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PD-20760
BAT54C
OT-23
IR54C
ir54c
BAT54C
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Q67040-S4628
Abstract: ic 5304 1a Q67040-S4626 ILA03N60 ILB03N60 ILD03N60 ILP03N60 IC 4043 configuration
Text: ILA03N60, ILP03N60 ILB03N60, ILD03N60 ^ LightMOS Power Transistor C • • • • • • • New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET
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ILA03N60,
ILP03N60
ILB03N60,
ILD03N60
P-TO-220-3-1
O-220AB)
ILA03N60
ILB03N60
Q67040-S4628
ic 5304 1a
Q67040-S4626
ILA03N60
ILB03N60
ILD03N60
ILP03N60
IC 4043 configuration
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L03N60
Abstract: PG-TO220-3-31 TRANSISTOR SMD MARKING CODE 1v mj 4043 Infineon MOSFET 1000V MS 25231 LAMP RG80 PG-TO-220-3-31 PG-TO25
Text: ILA03N60, ILP03N60 ILD03N60 ^ LightMOS Power Transistor C • • • • • • • • • New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET
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ILA03N60,
ILP03N60
ILD03N60
PG-TO-220-3-31
O-220
PG-TO-220-3-1
O-220AB)
PG-TO-252-3-1
O-252AA)
ILA03N60
L03N60
PG-TO220-3-31
TRANSISTOR SMD MARKING CODE 1v
mj 4043
Infineon MOSFET 1000V
MS 25231 LAMP
RG80
PG-TO-220-3-31
PG-TO25
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IR54S
Abstract: BAT54S
Text: Preliminary Data Sheet PD-20762 12/01 BAT54S SCHOTTKY DIODE 0.2 Amp 3 2 Major Ratings and Characteristics Characteristics SOT23 Value Units 0.2 A Description/ Features VRRM 30 V IFSM @ tp= 10 ms sine 1.0 A This Schottky barrier diode is designed for high speed switching
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PD-20762
BAT54S
OT-23
IR54S
IR54S
BAT54S
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BAT54A
Abstract: No abstract text available
Text: Preliminary Data Sheet PD-20763 12/01 BAT54A SCHOTTKY DIODE 0.2 Amp 3 2 Major Ratings and Characteristics Characteristics SOT23 Value Units 0.2 A Description/ Features VRRM 30 V IFSM @ tp= 10 ms sine 1.0 A This Schottky barrier diode is designed for high speed switching
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PD-20763
BAT54A
OT-23
IR54A
BAT54A
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IR54
Abstract: BAT54 a 20761 PD-20761
Text: Preliminary Data Sheet PD-20761 12/01 BAT54 SCHOTTKY DIODE 0.2 Amp 3 2 Major Ratings and Characteristics Characteristics SOT23 Value Units 0.2 A Description/ Features VRRM 30 V IFSM @ tp= 10 ms sine 1.0 A This Schottky barrier diode is designed for high speed switching
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PD-20761
BAT54
OT-23
IR54
BAT54
a 20761
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Untitled
Abstract: No abstract text available
Text: New Product Si4670DY Vishay Siliconix Dual N-Channel 25-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V 25 Channel-2 ID (A)a, e Qg (Typ.) RDS(on) (Ω)
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Si4670DY
08-Apr-05
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MAX7044
Abstract: No abstract text available
Text: Si4670DY Vishay Siliconix Dual N-Channel 25-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 25 Channel-2 25 RDS(on) (Ω) 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V ID (A)a, e Qg (Typ.) 8.0
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Si4670DY
2002/95/EC
Si4670DY-T1-E3
Si4670DY-T1-GE3
11-Mar-11
MAX7044
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Si4670DY-T1-GE3
Abstract: No abstract text available
Text: Si4670DY Vishay Siliconix Dual N-Channel 25-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 25 Channel-2 25 RDS(on) (Ω) 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V ID (A)a, e Qg (Typ.) 8.0
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Si4670DY
2002/95/EC
11-Mar-11
Si4670DY-T1-GE3
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si4670
Abstract: Si4670DY-T1-GE3
Text: Si4670DY Vishay Siliconix Dual N-Channel 25-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 25 Channel-2 25 RDS(on) (Ω) 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V ID (A)a, e Qg (Typ.) 8.0
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Si4670DY
2002/95/EC
18-Jul-08
si4670
Si4670DY-T1-GE3
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Untitled
Abstract: No abstract text available
Text: Si4670DY Vishay Siliconix Dual N-Channel 25-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 25 Channel-2 25 RDS(on) (Ω) 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V ID (A)a, e Qg (Typ.) 8.0
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Si4670DY
2002/95/EC
Si4670DY-T1-E3
Si4670DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product Si4670DY Vishay Siliconix Dual N-Channel 25-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V 25 Channel-2 ID (A)a, e Qg (Typ) rDS(on) (Ω)
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Si4670DY
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si4670DY Vishay Siliconix Dual N-Channel 25-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 25 Channel-2 25 RDS(on) (Ω) 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V ID (A)a, e Qg (Typ.) 8.0
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Si4670DY
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si4670DY Vishay Siliconix Dual N-Channel 25-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 25 Channel-2 25 RDS(on) (Ω) 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V ID (A)a, e Qg (Typ.) 8.0
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Si4670DY
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product Si4670DY Vishay Siliconix Dual N-Channel 25-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V 25 Channel-2 ID (A)a, e Qg (Typ.) RDS(on) (Ω)
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Si4670DY
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: SILICON EPITAXIAL PLANAR ABRUPT TUNER DIODE ISSUE 2 - SEPTEMBER 94_ DIODE PIN CONNECTION w2 ANO DE CATHODE ELECTRICAL CHARACTERISTICS at Tamb=25°C PARAMETER SYMBOL Reverse Breakdow n Voltage Vr MIN TYP MAX 30 UNIT V lf^=10|xA HA V r=25V Reverse Voltage Leakage
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OCR Scan
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50MHz
ZC744
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