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    ILP03N60 Search Results

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    ILP03N60 Price and Stock

    Infineon Technologies AG ILP03N60

    Trans IGBT Chip N-CH 600V 4.5A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: ILP03N60)
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    Avnet Americas ILP03N60 Tube 4 Weeks 1
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    Rochester Electronics ILP03N60 1,000 1
    • 1 $0.2625
    • 10 $0.2625
    • 100 $0.2468
    • 1000 $0.2231
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    ILP03N60 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ILP03N60 Infineon Technologies 3A / 600V IGBT with monolithically integrated diode for resonant-halfbridge topologies in lighting ballast (40W-120W) Original PDF

    ILP03N60 Datasheets Context Search

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    L03N60

    Abstract: PG-TO220-3-31 TRANSISTOR SMD MARKING CODE 1v mj 4043 Infineon MOSFET 1000V MS 25231 LAMP RG80 PG-TO-220-3-31 PG-TO25
    Text: ILA03N60, ILP03N60 ILD03N60 ^ LightMOS Power Transistor C • • • • • • • • • New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET


    Original     		PDF ILA03N60, ILP03N60 ILD03N60 PG-TO-220-3-31 O-220 PG-TO-220-3-1 O-220AB) PG-TO-252-3-1 O-252AA) ILA03N60 L03N60 PG-TO220-3-31 TRANSISTOR SMD MARKING CODE 1v mj 4043 Infineon MOSFET 1000V MS 25231 LAMP RG80 PG-TO-220-3-31 PG-TO25

    Q67040-S4628

    Abstract: ic 5304 1a Q67040-S4626 ILA03N60 ILB03N60 ILD03N60 ILP03N60 IC 4043 configuration
    Text: ILA03N60, ILP03N60 ILB03N60, ILD03N60 ^ LightMOS Power Transistor C • • • • • • • New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET


    Original     		PDF ILA03N60, ILP03N60 ILB03N60, ILD03N60 P-TO-220-3-1 O-220AB) ILA03N60 ILB03N60 Q67040-S4628 ic 5304 1a Q67040-S4626 ILA03N60 ILB03N60 ILD03N60 ILP03N60 IC 4043 configuration

    Untitled

    Abstract: No abstract text available
    Text: ILP03N60, ILB03N60 ILD03N60 ^ LightMOS Power Transistor C • • • • New revolutionary high voltage technology designed for ZVSswitching in lamp ballasts IGBT with integrated reverse diode Avalanche rated 150°C operating temperature P-TO-220-3-1 TO-220AB


    Original     		PDF ILP03N60, ILB03N60 ILD03N60 P-TO-220-3-1 O-220AB) P-TO-263-3-2 O-263AB) P-TO-252-3-1 O-252AA) ILP03N60

    ILA03N60

    Abstract: ILB03N60 ILD03N60 ILP03N60 Q67040-S4626 Q67040-S4628
    Text: ILA03N60, ILP03N60 ILB03N60, ILD03N60 ^ LightMOS Power Transistor C • • • • • • • New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET


    Original     		PDF ILA03N60, ILP03N60 ILB03N60, ILD03N60 P-TO-220-3-1 O-220AB) ILA03N60 ILB03N60 ILA03N60 ILB03N60 ILD03N60 ILP03N60 Q67040-S4626 Q67040-S4628