24N60AU
Abstract: ixsh24n60au1 24n60au1 TO-247 weight
Text: DIXYS HiPerFAST IGBT with Diode IXSH 24N60U1 IXSH 24N60AU1 v CES ^C25 VCE sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability Tj = 25° C to 150° C Tj = 25°C to 150°C; RGE= 1 Mi2 600 600 V V V6ES v GEM Continuous Transient 120 ±30 V
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OCR Scan
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24N60U1
24N60AU1
IXSH24N60AU1
1999IXYS
24N60AU
ixsh24n60au1
TO-247 weight
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PDF
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d 1548
Abstract: FU-695PDF-V620M06 FU-695PDF-V620M10 FU-695PDF-V620M14 FU-695PDF-V620M18 FU-695PDF-V620M22 FU-695PDF-V620M26 FU-695PDF-V620M30 FU-695PDF-V620M34
Text: TZ7-01-307A 1/6 October 5, 2001 Approved Approved Charged K.Masuda Specification of wavelength monitor integrated DFB-LD module Module type: FU-695PDF-V620Mxx • 8ch for 50GHz spacing, 350GHz range thermally wavelength tunable PRELIMINARY A B x Date 9.Oct.’01
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Original
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TZ7-01-307A
FU-695PDF-V620Mxx
50GHz
350GHz
FU-695PDF-V620Mxx
d 1548
FU-695PDF-V620M06
FU-695PDF-V620M10
FU-695PDF-V620M14
FU-695PDF-V620M18
FU-695PDF-V620M22
FU-695PDF-V620M26
FU-695PDF-V620M30
FU-695PDF-V620M34
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PDF
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V60100PW-M3/4W
Abstract: J-STD-002 diode package outline V60100PW
Text: New Product V60100PW Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 10 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses • High efficiency operation
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Original
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V60100PW
22-B106
2002/95/EC
2002/96/EC
18-Jul-08
V60100PW-M3/4W
J-STD-002
diode package outline
V60100PW
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PDF
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UPC1298V
Abstract: FU-672PDF-V620M03 FU-672PDF-V620M05 FU-672PDF-V620M06
Text: TZ7-01-304A 1/6 October 5, 2001 Approved Approved Charged K.Masuda Specification of wavelength monitor integrated DFB-LD module Module type: FU-672PDF-V620Mxx • 4ch for 50GHz spacing, 150GHz range thermally wavelength tunable A B x Date 5.Oct.’01 C D
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Original
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TZ7-01-304A
FU-672PDF-V620Mxx
50GHz
150GHz
FU-672PDF-V620Mxx
UPC1298V
FU-672PDF-V620M03
FU-672PDF-V620M05
FU-672PDF-V620M06
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PDF
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150ghz
Abstract: FU-675PDF-V620M03 FU-675PDF-V620M04 FU-675PDF-V620M05 FU-675PDF-V620M06 FU-675PDF-V620M08 FU-675PDF-V620M09 FU-675PDF-V620M10
Text: TZ7-01-305A 1/6 October 5, 2001 Approved Approved Charged K.Masuda Specification of wavelength monitor integrated DFB-LD module Module type: FU-675PDF-V620Mxx • 4ch for 50GHz spacing, 150GHz range thermally wavelength tunable A B x Date 5.Oct.’01 C D
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Original
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TZ7-01-305A
FU-675PDF-V620Mxx
50GHz
150GHz
FU-675PDF-V620Mxx
FU-675PDF-V620M03
FU-675PDF-V620M04
FU-675PDF-V620M05
FU-675PDF-V620M06
FU-675PDF-V620M08
FU-675PDF-V620M09
FU-675PDF-V620M10
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PDF
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RTH1 THERMISTOR
Abstract: 156020 d 1548 FU-692PDF-V620M06 FU-692PDF-V620M10 FU-692PDF-V620M14 FU-692PDF-V620M18 FU-692PDF-V620M22 FU-692PDF-V620M26 FU-692PDF-V620M30
Text: TZ7-01-306A 1/6 October 5, 2001 Approved Approved Charged K.Masuda Specification of wavelength monitor integrated DFB-LD module Module type: FU-692PDF-V620Mxx • 8ch for 50GHz spacing, 350GHz range thermally wavelength tunable PRELIMINARY A B x Date 9.Oct.’01
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Original
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TZ7-01-306A
FU-692PDF-V620Mxx
50GHz
350GHz
FU-692PDF-V620Mxx
RTH1 THERMISTOR
156020
d 1548
FU-692PDF-V620M06
FU-692PDF-V620M10
FU-692PDF-V620M14
FU-692PDF-V620M18
FU-692PDF-V620M22
FU-692PDF-V620M26
FU-692PDF-V620M30
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product V60100PW Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 10 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses • High efficiency operation
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Original
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V60100PW
22-B106
2002/95/EC
2002/96/EC
11-Mar-11
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PDF
|
Untitled
Abstract: No abstract text available
Text: V60100PW www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 10 A FEATURES TMBS • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation
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Original
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V60100PW
22-B106
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product V60100PW Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 10 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses • High efficiency operation
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Original
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V60100PW
22-B106
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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PDF
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0824D
Abstract: No abstract text available
Text: New Product V60100PW Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 10 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses • High efficiency operation
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Original
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V60100PW
22-B106
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
0824D
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product V60120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses • High efficiency operation
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Original
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V60120C
O-220AB
22-B106
2002/95/EC
2002/96/EC
18-Jul-08
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PDF
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V60100C
Abstract: J-STD-002
Text: New Product V60100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses TO-220AB • High efficiency operation
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Original
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V60100C
O-220AB
22-B106
2002/95/EC
2002/96/EC
O-220Alectual
18-Jul-08
V60100C
J-STD-002
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PDF
|
Untitled
Abstract: No abstract text available
Text: New Product V60120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses • High efficiency operation
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Original
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V60120C
O-220AB
22-B106
2002/95/EC
2002/96/EC
O-220AB
18-Jul-08
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PDF
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J-STD-002
Abstract: V60100C VB60100C
Text: New Product V60100C & VB60100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS TO-220AB TO-263AB • Low forward voltage drop, low power
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Original
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V60100C
VB60100C
O-220AB
O-263AB
J-STD-020,
O-263AB
22-B106
O-220AB)
J-STD-002
V60100C
VB60100C
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PDF
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|
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V60100C
Abstract: No abstract text available
Text: New Product V60100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses TO-220AB • High efficiency operation
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Original
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V60100C
O-220AB
22-B106
2002/95/EC
2002/96/EC
11-Mar-11
V60100C
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PDF
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TLD 721
Abstract: optical fiber at 1.55um 153248 d 1548 TLD 521 FU-698PDF-V620MZ1 154552-1
Text: TZ7-02-399A 1/7 July 22, 2002 Approved Approved Charged M.Sato Specification of wavelength monitor integrated DFB-LD module Module type: FU-698PDF-V620Mxx • 16ch for 25GHz spacing thermally wavelength tunable PRELIMINARY A B x Date 25 Jul.’02 C D Approved
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Original
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TZ7-02-399A
FU-698PDF-V620Mxx
25GHz
FU-698PDF-V620Mxx
TLD 721
optical fiber at 1.55um
153248
d 1548
TLD 521
FU-698PDF-V620MZ1
154552-1
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PDF
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J-STD-002
Abstract: No abstract text available
Text: New Product V60120C, VB60120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses TO-263AB
|
Original
|
V60120C,
VB60120C
O-263AB
O-220AB
J-STD-020,
O-263AB
2002/95/EC
2002/96/EC
V60120C
J-STD-002
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PDF
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V60100C
Abstract: J-STD-002 VB60100C
Text: New Product V60100C & VB60100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS TO-220AB TO-263AB • Low forward voltage drop, low power
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Original
|
V60100C
VB60100C
O-220AB
O-263AB
J-STD-020,
O-263AB
22-B106
O-220AB)
V60100C
J-STD-002
VB60100C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product V60100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses TO-220AB • High efficiency operation
|
Original
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V60100C
O-220AB
22-B106
2002/95/EC
2002/96/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
PDF
|
V60100C
Abstract: No abstract text available
Text: New Product V60100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses TO-220AB • High efficiency operation
|
Original
|
V60100C
O-220AB
22-B106
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
2011/65/EU.
V60100C
|
PDF
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V60100C
Abstract: No abstract text available
Text: New Product V60100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses TO-220AB • High efficiency operation
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Original
|
V60100C
O-220AB
22-B106
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
V60100C
|
PDF
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FU-632SEA-V31M11
Abstract: FU-632SEA-V31M13 FU-632SEA-V31M15 FU-632SEA-V31M17 FU-632SEA-V31M19 FU-632SEA-V31M21 FU-632SEA-V31M23 FU-632SEA-V31M9 TZ7-02-621B ke 931 diode
Text: TZ7-02-621B 1/8 14 January,2003 APPROVED CHARGED K.Abe Specification of EAM/DFB-LD module for 2.5Gb/s, 6400ps/nm, and 12800 ps/nm WDM application Type No. FU-632SEA-V31Mxx FU-632SEA-V61Mxx FU-632SEA-W31Mxx FU-632SEA-W61Mxx ( XX :9~91) A B C D X Approved Date
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Original
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TZ7-02-621B
6400ps/nm,
FU-632SEA-V31Mxx
FU-632SEA-V61Mxx
FU-632SEA-W31Mxx
FU-632SEA-W61Mxx
FU-632SEA-V31Mxx/W31Mxx
FU-632SEA-V61Mxx/W61Mxx
FU-632SEA-V61Mxx/-V31Mxx
FU-632SEA-V31M11
FU-632SEA-V31M13
FU-632SEA-V31M15
FU-632SEA-V31M17
FU-632SEA-V31M19
FU-632SEA-V31M21
FU-632SEA-V31M23
FU-632SEA-V31M9
ke 931 diode
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product V60120C, VB60120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses TO-263AB
|
Original
|
V60120C,
VB60120C
O-220AB
O-263AB
J-STD-020,
V60120C
22-B106
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product V60100C & VB60100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS TO-220AB TO-263AB • Low forward voltage drop, low power
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Original
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V60100C
VB60100C
O-220AB
O-263AB
J-STD-020,
O-263AB
22-B106
O-220AB)
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PDF
|
