tyco igbt 6a
Abstract: No abstract text available
Text: Targetdatasheet flow PIM 0+P, 600V, 4A Version 0102 Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified Parameter Diode Inverter Diode Wechselrichter DC forward current Dauergleichstrom Repetitive peak forward current Periodischer Spitzenstrom
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D81359
tyco igbt 6a
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BYV29B-600
Abstract: No abstract text available
Text: BYV29B-600 Rectifier diode ultrafast Rev. 01 — 11 August 2003 Product data M3D166 1. Product profile 1.1 Description Ultra-fast, epitaxial rectifier diode in a surface mount plastic package. Product availability: BYV29B-600 in SOT404 D2-PAK . 1.2 Features
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BYV29B-600
M3D166
BYV29B-600
OT404
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 5SDF 0102C0400 5SDF 0102C0400 High Frequency Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses High operational reliability Applications Welding equipment High current application up to 10 kHz
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0102C0400
1768/138a,
com/semiconductors11c
Jul-12
DS/293/11c
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5SDF0102C0400
Abstract: No abstract text available
Text: PRELIMINARY 5SDF 0102C0400 5SDF 0102C0400 High Frequency Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses High operational reliability Applications Welding equipment High current application up to 10 kHz
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0102C0400
1768/138a,
DS/293/11d
Nov-12
5SDF0102C0400
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ABB 12 30 01
Abstract: 5SDF0102C0400 diode tfr
Text: PRELIMINARY 5SDF 0102C0400 5SDF 0102C0400 High Frequency Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses High operational reliability Applications Welding equipment High current application up to 10 kHz
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0102C0400
1768/138a,
com/semiconductors11c
Jul-12
DS/293/11c
ABB 12 30 01
5SDF0102C0400
diode tfr
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PWSN0008DD-A
Abstract: RJK0389DPA RJK0389DPA-00-J0 MOS2
Text: RJK0389DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G1722-0102 Preliminary Rev.1.02 Jul 25, 2008 Features • • • • • Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free
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RJK0389DPA
REJ03G1722-0102
PWSN0008DD-A
RJK0389DPA
RJK0389DPA-00-J0
MOS2
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CM05B
Abstract: D65084 1N78 1N5764 1N5764MR C65101
Text: MIL-s-19500&l EL 19November 1971 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE,GALLIUM ARSENIDE, MIXER TYPE1N5764, and 1N5764MR 1N5764M , . 1. ScOPE 1.1Scope.Thisspecification covers thedetailrequirements forGal!iumArsenide, Luw Barrier, HighSee:itivity,
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L-s-19500
19November
TYPE1N5764,
1N5764M
1N5764MR
DMR1426
JAN66WHICH
CM05B
D65084
1N78
1N5764
1N5764MR
C65101
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bv42
Abstract: STBV42D st marking code
Text: STBV42D High voltage fast-switching NPN power transistor Preliminary data Features • High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed ■ Integrated free-wheeling diode Application ■ Compact fluorescent lamps CFLs
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STBV42D
BV42D
bv42
STBV42D
st marking code
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L73DL
Abstract: diode marking w1 NPN transistor Electronic ballast to92
Text: STL73D High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed ■ Integrated antiparallel collector-emitter diode Application ■ Electronic ballast for fluorescent lighting
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STL73D
L73DL
diode marking w1
NPN transistor Electronic ballast to92
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Untitled
Abstract: No abstract text available
Text: STBV42D High voltage fast-switching NPN power transistor Preliminary data Features • High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed ■ Integrated free-wheeling diode Application ■ Compact fluorescent lamps CFLs
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STBV42D
BV42D
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STL73D
Abstract: JESD97 L73DL
Text: STL73D High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ Integrated antiparallel collector-emitter diode
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STL73D
STL73D
JESD97
L73DL
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PS2533L-1-A
Abstract: BELL MOUTH EN60747-5-2 NL601 PS2533-1 PS2533L-1 PS2533L-1-E3 PS2533L-1-E4 VDE0884 ps2533
Text: PHOTOCOUPLER PS2533-1,PS2533L-1 HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES −NEPOC Series− DESCRIPTION The PS2533-1 and PS2533L-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN
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PS2533-1
PS2533L-1
PS2533L-1
PS2533L-1-E3,
PS2533L-1-A
BELL MOUTH
EN60747-5-2
NL601
PS2533L-1-E3
PS2533L-1-E4
VDE0884
ps2533
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2533 nec
Abstract: ps2533 PS2533L-1-F3-A PS2533L-1-V-A PS2533L-1-A EN60747-5-2 NL601 PS2533-1 PS2533L-1 PS2533L-1-E3
Text: DATA SHEET PHOTOCOUPLER PS2533-1,PS2533L-1 HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES −NEPOC Series− DESCRIPTION The PS2533-1 and PS2533L-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN
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PS2533-1
PS2533L-1
PS2533L-1
PS2533L-1-E3,
2533 nec
ps2533
PS2533L-1-F3-A
PS2533L-1-V-A
PS2533L-1-A
EN60747-5-2
NL601
PS2533L-1-E3
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NEC 2532
Abstract: pc 2532 nec PS2532 ps2532-1-a NEC Systems speech PN10232EJ02V0DS
Text: DATA SHEET PHOTOCOUPLER PS2532-1,PS2532L-1 HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES −NEPOC Series− DESCRIPTION The PS2532-1 and PS2532L-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN
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PS2532-1
PS2532L-1
PS2532L-1
PS2532L-1-E3,
NEC 2532
pc 2532 nec
PS2532
ps2532-1-a
NEC Systems speech
PN10232EJ02V0DS
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Untitled
Abstract: No abstract text available
Text: RF2320 Preliminary 3 LINEAR GENERAL PURPOSE AMPLIFIER Typical Applications • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations Product Description 0.158 0.150 The RF2320 is a general purpose, low-cost, high-linearity
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RF2320
RF2320
OP-16
1000MHz,
03MHz
3000MHz
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PS2532
Abstract: PS2532-1 PS2532L-2-E3 PS2532-2 PS2532L-1 PS2532L-1-E3 VDE0884 PS2532L-1-F4-A
Text: PHOTOCOUPLER PS2532-1,-2,-4,PS2532L-1,-2,-4 HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SERIES −NEPOC Series− DESCRIPTION The PS2532-1, -2, -4 and PS2532L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode
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PS2532-1
PS2532L-1
PS2532-1,
PS2532L-1,
PS2532L-1-E3,
PS2532
PS2532L-2-E3
PS2532-2
PS2532L-1-E3
VDE0884
PS2532L-1-F4-A
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PS2533
Abstract: PS2533-1 PS2533-2 PS2533L-1 PS2533L-1-E3 PS2533L-2-E3 VDE0884
Text: PHOTOCOUPLER PS2533-1,-2,-4,PS2533L-1,-2,-4 HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SERIES −NEPOC Series− DESCRIPTION The PS2533-1, -2, -4 and PS2533L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode
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PS2533-1
PS2533L-1
PS2533-1,
PS2533L-1,
PS2533L-1-E3,
PS2533
PS2533-2
PS2533L-1-E3
PS2533L-2-E3
VDE0884
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Untitled
Abstract: No abstract text available
Text: STBV42D High voltage fast-switching NPN power transistor Preliminary data Features • High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed ■ Integrated free-wheeling diode s ct u d o Application ■ r P e Compact fluorescent lamps (CFLs)
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STBV42D
BV42D
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NEC 2532
Abstract: PS2532-2 pc 2532 nec PS2532 PS2532-1 PS2532-4 PS2532L-1 PS2532L-1-E3 PS2532L-2-E3 VDE0884
Text: DATA SHEET PHOTOCOUPLER PS2532-1,-2,-4,PS2532L-1,-2,-4 HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES −NEPOC TM Series− DESCRIPTION The PS2532-1, -2, -4 and PS2532L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode
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PS2532-1
PS2532L-1
PS2532-1,
PS2532L-1,
NEC 2532
PS2532-2
pc 2532 nec
PS2532
PS2532-4
PS2532L-1-E3
PS2532L-2-E3
VDE0884
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NEC 2532
Abstract: PS2532 2532 NEC pc 2532 nec PS2532L-2-E3 VDE0884 PS2532-1 PS2532-2 PS2532L-1 PS2532L-1-E3
Text: DATA SHEET PHOTOCOUPLER PS2532-1,-2,-4,PS2532L-1,-2,-4 HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES −NEPOC Series− DESCRIPTION The PS2532-1, -2, -4 and PS2532L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode
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PS2532-1
PS2532L-1
PS2532-1,
PS2532L-1,
PS25s
NEC 2532
PS2532
2532 NEC
pc 2532 nec
PS2532L-2-E3
VDE0884
PS2532-2
PS2532L-1-E3
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BIDIRECTIONAL DIODE
Abstract: BZV37
Text: Product specification Philips Semiconductors Bidirectional voltage regulator diode BZV37 FEATURES DESCRIPTION • Low total power dissipation: max. 400 mW Low-power voltage regulator diode in an hermetically sealed leaded glass SOD68 DO-34 package. • Working voltage: nom. 6.5 V
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BZV37
25ections
711062b
BIDIRECTIONAL DIODE
BZV37
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MBD-1005
Abstract: 1005LT
Text: MOTOROLA Order this docum ent by MMBD1005LT1/D SEMICONDUCTOR TECHNICAL DATA G L r e e n i n e MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the G reenLine P ortfolio o f devices with e n e rg y -c o n s e rv in g traits. This sw itching diode has the fo llo w in g features:
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MMBD1005LT1/D
MMBD1005LT1
MMBD2005T1
MMBD3005T1
2PHX34592F
MBD1005LT1/D
MBD-1005
1005LT
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MRD821
Abstract: No abstract text available
Text: MOTOROLA SE M IC O N D U C T O R TECHNICAL DATA MRD821 P h o to D e te c to r Diode Output T h is device is d e sig n e d for infrared rem ote control an d other se n sin g applications, and can be u se d in conjunction with the M L E D 8 1 infrared em itting diode.
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MRD821
MRD821
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MOC263
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by MOC263/D SEMICONDUCTOR TECHNICAL DATA MOC263 Small Outline Optoisolators [CTR = 500% Min] Darlington Output No Base Connection Motorola Preferred Device These devices consist of a gallium arsenide infrared emitting diode optically
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MOC263/D
RS481A
S5036.
2PHX34506P-O
MOC263
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