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    DIN 82-RAA 1,2 Search Results

    DIN 82-RAA 1,2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-DNPDM6MMX2-006 Amphenol Cables on Demand Amphenol CS-DNPDM6MMX2-006 Premium 6-pin Mini-DIN 6 (MD6) Cable - Mini-DIN 6 Male to Mini-DIN 6 Male 6ft Datasheet
    BPBS8B21P3LF Amphenol Communications Solutions Din Accessory Cover Visit Amphenol Communications Solutions
    65195-001LF Amphenol Communications Solutions Din Accessory Latching Lock Visit Amphenol Communications Solutions
    515903532189311LF Amphenol Communications Solutions DIN STANDARD POWER Visit Amphenol Communications Solutions
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    DIN 82-RAA 1,2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    din 82 RAA 0.8

    Abstract: din 82
    Text: 1,35 2,80 5 6 7 8 -0,10 A 6 -0,10 1,20 A +0,10 4 B B 2 0,0 C C 17,30 +0,10 2,30 -0,08 9 +0,15 D D 4 +0,10 Rändel / Knurl DIN 82-RAA 0,6 E Technische Änderungen vorbehalten / all data subject to amendment without notice 2,90 2,40 -0,10 The reproduction, distribution and utilization of this document as well as the communication of its contents to others without express authorization is


    Original     		PDF 82-RAA din 82 RAA 0.8 din 82

    EM11B

    Abstract: CMS6432LBW M2A2 m4a4 FMS6432
    Text: C F MS6432LBx–75Ex 64M(2Mx32) Low Power SDRAM Revision 0.7 Sep. 2007 Rev. 0.7, Sep. ‘07 C(F)MS6432LBx–75Ex Document Title 64M(2Mx32) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Sep.09th, 2005 Preliminary


    Original     		PDF MS6432LBx 2Mx32) EM11B CMS6432LBW M2A2 m4a4 FMS6432

    Untitled

    Abstract: No abstract text available
    Text: FMS6432LBx–75Ex 64M 2Mx32 Low Power SDRAM Revision 0.5 May. 2007 Rev. 0.5, May. ‘07 FMS6432LBx–75Ex Document Title 64M(2Mx32) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Sep.09th, 2005 Preliminary 0.1 Change Part Numbering of Device Version (AÆB)


    Original     		PDF FMS6432LBxâ 2Mx32)

    Untitled

    Abstract: No abstract text available
    Text: CMS4A16LAx–75Ex 128M 8Mx16 Low Power SDRAM Revision 0.5 May. 2007 Rev. 0.5, May. ‘07 CMS4A16LAx–75Ex Document Title 128M(8Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark Preliminary 0.0 Initial Draft Apr.25th, 2005 0.1


    Original     		PDF CMS4A16LAx 8Mx16) 160ns 350uA 400uA

    Untitled

    Abstract: No abstract text available
    Text: CMS4A32LAx–75Ex 128M 4Mx32 Low Power SDRAM Revision 0.6 May. 2007 Rev. 0.6, May. ‘07 CMS4A32LAx–75Ex Document Title 128M(4Mx32) Low Power SDRAM Revision History Revision No. History Draft date Remark Preliminary 0.0 Initial Draft Apr.25th, 2005 0.1


    Original     		PDF CMS4A32LAxâ 4Mx32) 160ns 350uA 400uA

    Untitled

    Abstract: No abstract text available
    Text: FMS6432LBx–75xx 64M 2Mx32 Low Power SDRAM Revision 0.4 Aug. 2006 Rev. 0.4, Aug. ‘06 FMS6432LBx–75xx Document Title 64M(2Mx32) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Sep.13th, 2005 Preliminary 0.1 Change Part Numbering of Device Version (AÆB)


    Original     		PDF FMS6432LBxâ 2Mx32)

    Untitled

    Abstract: No abstract text available
    Text: CMS4S32LAx–75xx 256M 8Mx32 Low Power SDRAM 2 pcs of 128Mb components Revision 0.3 Dec. 2006 Rev. 0.3, Dec. CMS4S32LAx–75xx Document Title 256M(8Mx32) Low Power SDRAM Revision History Revision No. History Draft date Remark Preliminary 0.0 Initial Draft


    Original     		PDF CMS4S32LAxâ 8Mx32) 128Mb 800uA 900uA

    CBB Capacitor Selection Guide

    Abstract: No abstract text available
    Text: CMS4A16LAx–75xx 128M 8Mx16 Low Power SDRAM Revision 0.4 Nov. 2006 Rev. 0.4, Nov. ‘06 CMS4A16LAx–75xx Document Title 128M(8Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark Preliminary 0.0 Initial Draft Apr.25th, 2005 0.1


    Original     		PDF CMS4A16LAx 8Mx16) 400uA 450uA 54ball CMS4A16LAF CBB Capacitor Selection Guide

    transistor A7

    Abstract: CMS3232LAF CMS3232LAG CMS3232LAH
    Text: CMS3232LAx-75xx 32M 1Mx32 Low Power SDRAM Revision 0.2 January, 2007 Rev0.2, Jan. 2007 CMS3232LAx-75xx Document Title 32M(1Mx32) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Feb. 18th, 2005 Preliminary 0.1 Add H(Pb-Free & Halogen Free) descriptions


    Original     		PDF CMS3232LAx-75xx 1Mx32) transistor A7 CMS3232LAF CMS3232LAG CMS3232LAH

    CMS6416LAF

    Abstract: CMS6416LAG CMS6416LAH CMS6432LBH
    Text: CMS6416LAx-15Ex 64M 4Mx16 Low Power SDRAM Revision 1.3 November, 2005 Rev1.3, Nov. 2005 CMS6416LAx-15Ex Document Title 64M(4Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Jun.25th, 2004 Preliminary 0.1 Correct typo.


    Original     		PDF CMS6416LAx-15Ex 4Mx16) CMS6416LAF CMS6416LAG CMS6416LAH CMS6432LBH

    CMS3216LAF

    Abstract: CMS3216LAG CMS3216LAH
    Text: CMS3216LAx-75xx 32M 2Mx16 Low Power SDRAM Revision 0.2 January, 2007 Rev0.2, Jan. 2007 CMS3216LAx-75xx Document Title 32M(2Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Mar.3rd, 2005 Preliminary 0.1 Add H(Pb-Free & Halogen Free) descriptions


    Original     		PDF CMS3216LAx-75xx 2Mx16) CMS3216LAF CMS3216LAG CMS3216LAH

    CMS3216LAF

    Abstract: CMS3216LAG CMS3216LAH
    Text: CMS3216LAx-75Ex 32M 2Mx16 Low Power SDRAM Revision 0.1 November, 2005 Rev0.1, Nov. 2005 CMS3216LAx-75Ex Document Title 32M(2Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Mar.3rd, 2005 Preliminary 0.1 Add H(Pb-Free & Halogen Free) descriptions


    Original     		PDF CMS3216LAx-75Ex 2Mx16) CMS3216LAF CMS3216LAG CMS3216LAH

    Untitled

    Abstract: No abstract text available
    Text: CMS3232LAx-75Ex 32M 1Mx32 Low Power SDRAM Revision 0.2 August, 2006 Rev0.2, Aug. 2006 CMS3232LAx-75Ex Document Title 32M(1Mx32) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Mar. 3rd, 2005 Preliminary 0.1 Add H(Pb-Free & Halogen Free) descriptions


    Original     		PDF CMS3232LAx-75Ex 1Mx32)

    CMS3216LAF

    Abstract: CMS3216LAG CMS3216LAH EM11B
    Text: CMS3216LAx-75Ex 32M 2Mx16 Low Power SDRAM Revision 0.2 August, 2006 Rev0.2, Aug. 2006 CMS3216LAx-75Ex Document Title 32M(2Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Mar.3rd, 2005 Preliminary 0.1 Add H(Pb-Free & Halogen Free) descriptions


    Original     		PDF CMS3216LAx-75Ex 2Mx16) CMS3216LAF CMS3216LAG CMS3216LAH EM11B

    CYL008M162FFBU-1ABAI

    Abstract: M2A2
    Text: PRELIMINARY CYL008M162FFB 128-Mbit 8-Mbit x 16 Low-Power MoBL4 SDRAM Features — Deep Sleep Mode — Self Refresh Mode; standard and low power • Functionality • Temperature: –40°C to +85°C — Internal 4 Bank Operation • 8 mm x 8 mm x 1.0 mm 54-ball 0.8 mm FBGA Package


    Original     		PDF CYL008M162FFB 128-Mbit 54-ball CYL008M162FFB CYL008M162FFBU-1ABAI M2A2

    MCP 67 MV- A2

    Abstract: SAMSUNG MCp samsung "nor flash" sensing nand mcp samsung ka SAMSUNG mcp Reliability spec Product Selection Guide samsung 2013 MCP NAND, DRAM, NOR SAMSUNG 256Mb mcp Qualification Reliability 14CLK UtRAM Density
    Text: KAA00B209M-TGxx MCP MEMORY Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash/32M Bit(2Mx16) UtRAM/128M Bit(2Mx16x4Banks) MobileSDRAM Revision History Revision No. History Draft Date Remark 0.0 Initial issue. January 15, 2002 Advance 0.1


    Original     		PDF KAA00B209M-TGxx 16Mx16) Flash/32M 2Mx16) UtRAM/128M 2Mx16x4Banks) 127-Ball 80x12 08MAX MCP 67 MV- A2 SAMSUNG MCp samsung "nor flash" sensing nand mcp samsung ka SAMSUNG mcp Reliability spec Product Selection Guide samsung 2013 MCP NAND, DRAM, NOR SAMSUNG 256Mb mcp Qualification Reliability 14CLK UtRAM Density

    SAMSUNG MCP

    Abstract: 1g nand mcp KBE00S003M-D411 KBE00S003M Flash MCp nand DRAM 107-ball MCP NOR FLASH SDRAM samsung "nor flash" sensing MCP MEMORY UtRAM Density MCP 1Gb nand 512mb dram 130
    Text: KBE00S003M-D411 MCP MEMORY MCP Specification 1Gb NAND*2 + 256Mb Mobile SDRAM*2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF KBE00S003M-D411 256Mb 107-Ball 80x13 SAMSUNG MCP 1g nand mcp KBE00S003M-D411 KBE00S003M Flash MCp nand DRAM 107-ball MCP NOR FLASH SDRAM samsung "nor flash" sensing MCP MEMORY UtRAM Density MCP 1Gb nand 512mb dram 130

    MCP 1Gb nand 512mb dram 130

    Abstract: SAMSUNG MCP MCP 67 MV- A2 137FBGA KBE00S009M KBE00S009M-D411 UtRAM Density
    Text: KBE00S009M-D411 MCP MEMORY MCP Specification 1Gb NAND*2 + 256Mb Mobile SDRAM*2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF KBE00S009M-D411 256Mb 137-Ball 80x14 MCP 1Gb nand 512mb dram 130 SAMSUNG MCP MCP 67 MV- A2 137FBGA KBE00S009M KBE00S009M-D411 UtRAM Density

    SAMSUNG MCP

    Abstract: KAA00BB07M-DGUV UtRAM Density samsung nor nand ddr mcp nand sdram mcp M/BVS mcp ohm
    Text: Preliminary MCP MEMORY KAA00BB07M-DGUV Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash / 64M Bit (4Mx16) Burst UtRAM / 256M Bit (4Mx16x4Banks) Mobile SDRAM Revision History Revision No. History 0.0 Draft Date Initial draft - 256Mb NAND C-Die_Ver 2.6


    Original     		PDF KAA00BB07M-DGUV 16Mx16) 4Mx16) 4Mx16x4Banks) 256Mb 137-Ball 80x14 SAMSUNG MCP KAA00BB07M-DGUV UtRAM Density samsung nor nand ddr mcp nand sdram mcp M/BVS mcp ohm

    NAND FLASH DDP

    Abstract: SAMSUNG MCP MCP 256M nand 128M mobile sdram 137FBGA MCP 67 MV- A2 8188 KBE00F005A KBE00F005A-D411 MCP NOR FLASH SDRAM UtRAM Density
    Text: KBE00F005A-D411 MCP MEMORY MCP Specification 512Mb NAND*2 + 256Mb Mobile SDRAM*2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF KBE00F005A-D411 512Mb 256Mb 137-Ball 80x14 NAND FLASH DDP SAMSUNG MCP MCP 256M nand 128M mobile sdram 137FBGA MCP 67 MV- A2 8188 KBE00F005A KBE00F005A-D411 MCP NOR FLASH SDRAM UtRAM Density

    S73WS256N

    Abstract: din 82 RGV
    Text: S73WS256N Based MCPs Stacked Multi-Chip Product MCP 512/256 Megabit (32M/16M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with 256/128 Megabit (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Shared Data Bus ADVANCE INFORMATION


    Original     		PDF S73WS256N 32M/16M 16-bit) 16-bit din 82 RGV

    kbe00f003m

    Abstract: SAMSUNG MCP Flash MCp nand DRAM 107-ball NAND FLASH DDP samsung mcp 107-ball d411 KBE00G003M-D411 NNDD512512256256BBFF UtRAM Density MCP 1Gb 512Mb 130
    Text: KBE00G003M-D411 MCP MEMORY NNDD512512256256BBFF NAND 512Mb*2 + Mobile SDRAM 256Mb*2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF KBE00G003M-D411 NNDD512512256256BBFF 512Mb 256Mb 107-Ball 80x13 kbe00f003m SAMSUNG MCP Flash MCp nand DRAM 107-ball NAND FLASH DDP samsung mcp 107-ball d411 KBE00G003M-D411 NNDD512512256256BBFF UtRAM Density MCP 1Gb 512Mb 130

    TCMS

    Abstract: S29WS-N S72WS256ND0 S72WS256NDE S72WS256NEE 225 J 250 AVA CL 20 JEP95
    Text: S72WS256N Based MCPs 256/512 Megabit 16M/32M x 16-bit CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with 256/128 Megabit (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Split Bus ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications


    Original     		PDF S72WS256N 16M/32M 16-bit) 16-bit TCMS S29WS-N S72WS256ND0 S72WS256NDE S72WS256NEE 225 J 250 AVA CL 20 JEP95

    TCMS

    Abstract: TRANSISTOR BFW 11 pin diagram S73WS256N marking code qa1 148
    Text: S73WS256N Based MCPs Stacked Multi-Chip Product MCP 512/256 Megabit (32M/16M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with 256/128 Megabit (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Shared Data Bus ADVANCE INFORMATION


    Original     		PDF S73WS256N 32M/16M 16-bit) 16-bit S72WS256N TCMS TRANSISTOR BFW 11 pin diagram marking code qa1 148