PIC16 example ay0438
Abstract: 30014 QCI-30014 sugar production process 85c72 PIC16 example codes QCI-30397 PIC16-17 27c64 EEPROM AY0438
Text: DIE SUPPORT Overview of Microchip Die Specifications INTRODUCTION This overview is intended to give our customers a better understanding of Microchip’s process of die usage and manufacture. This information is not intended as what is needed to manufacture die. It is highly recommended
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PIC16 example ay0438
30014
QCI-30014
sugar production process
85c72
PIC16 example codes
QCI-30397
PIC16-17
27c64 EEPROM
AY0438
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Die Attach epoxy stamping
Abstract: 60022 pressure low die attach coefficient of thermal expansion of thermal conductive pressure sensitive adhesive
Text: Application Note Handling Gallium Arsenide Die Rev 2 INTRODUCTION Gallium arsenide die have physical properties that require special care in assembly to ensure high yields and good reliability. A few simple precautions in the die mounting and wire bonding operations
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AN-1060
Abstract: Silicon Controlled Rectifier Manual an1060 ultrasonic bond Three bond jedec tray bare die JESD 49
Text: AN-1060 International Rectifier • 233 Kansas Street, El Segundo, CA 90245 ! USA BARE DIE: HANDLING AND STORAGE By Richard Clark Introduction International Rectifier supply a range of power devices in a variety of packages and in Bare Die form. The Bare Die products are available in a
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AN-1060
AN-1060
Silicon Controlled Rectifier Manual
an1060
ultrasonic bond
Three bond
jedec tray bare die
JESD 49
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AN-1061
Abstract: Ultrasonic welding circuit centrifuge machine for acceleration epoxy adhesive paste cte table soft solder die bonding ultrasonic flow meter ultrasonic transducer circuit ultrasonic generator ultrasonic bond Ultrasonic Transducer for gas meter
Text: Application Note AN-1061 Bare Die: Die Attach and Wire Bonding Guidance for setting up assembly processes By Richard Clark Table of Contents Page Introduction .1 Storage and Handling .2
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AN-1061
AN-1061
Ultrasonic welding circuit
centrifuge machine for acceleration
epoxy adhesive paste cte table
soft solder die bonding
ultrasonic flow meter
ultrasonic transducer circuit
ultrasonic generator
ultrasonic bond
Ultrasonic Transducer for gas meter
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Untitled
Abstract: No abstract text available
Text: VISHAY SEMICONDUCTORS www.vishay.com Optical Sensors Application Note Handling IR Emitters and Photo Detector Bare Die By Elena Poklonskaya This application note provides instructions for how to handle and mount IR emitter and photo detector bare die products
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30-Jul-14
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PC2400
Abstract: QMI-505MT QMI505 5310A EN-4088Z QMI505MT SN74F32 SN74F32N RH42
Text: TEXAS INSTRUMENTS Final Notification for the QMI 505MT Die Mount Compound Process at the Mexico and Malaysia Assembly/Test Facilities for PDIP Product March 18, 1998 Abstract Texas Instruments, Standard Linear and Logic, is qualifying the QMI 505MT die mount compound
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505MT
EN-4088Z
QMI-505MT
PC2400
QMI505
5310A
QMI505MT
SN74F32
SN74F32N
RH42
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AuSn eutectic
Abstract: wire bond recommendations Die Attach and Bonding Guidelines Gan on silicon transistor Gan on silicon substrate AN008 DIE BONDER
Text: Application Note AN-008 Die Attach and Bonding Recommendations Introduction While Nitronex’s core market is packaged RF products, we sell die to select customers for use in modules and subsystems. One benefit of Nitronex GaN devices is they are fabricated on industry standard silicon wafers so
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AN-008
AuSn eutectic
wire bond recommendations
Die Attach and Bonding Guidelines
Gan on silicon transistor
Gan on silicon substrate
AN008
DIE BONDER
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Silicon Controlled Rectifier Manual
Abstract: jedec tray bare die JESD 49 JESD-49 AN-1060 Three bond soft solder die bonder AN1060
Text: Application Note AN-1060 Bare Die: Handling and Storage By Richard Clark Table of Contents Page Introduction .1 Packing/Carrier Type .1
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Silicon Controlled Rectifier Manual
jedec tray bare die
JESD 49
JESD-49
AN-1060
Three bond
soft solder die bonder
AN1060
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Untitled
Abstract: No abstract text available
Text: Silicon PIN Diode Chips V3.0 Absolute Maximum Ratings1 @ TA = +25°C Unless otherwise specified Features • Hermetic Glass Passivated CERMACHIP • Oxide Passivated Planar Chips • Faster Switching Speed • Lower Loss, Higher Isolation • Switch & Attenuator Die
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200oC,
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KCW-10
Abstract: AuSn solder GaAs MMIC ESD, Die Attach and Bonding Guidelines thermocompression bonder AuSn a/KCW-10
Text: H GaAs MMIC Assembly and Handling Guidelines Application Note 999 Mechanical Considerations Because of the small size of the devices, handling should always be performed with the aid of a microscope. There are several methods for picking up, transferring and die
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5091-1988E
5964-6644E
KCW-10
AuSn solder
GaAs MMIC ESD, Die Attach and Bonding Guidelines
thermocompression
bonder
AuSn
a/KCW-10
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SYLGARD
Abstract: SYLGARD 539 MA47416-132 MA4P202-134
Text: RoHS Compliant Silicon PIN Diode Chips V 6.0 Absolute Maximum Ratings1 @ TAMB = +25°C Unless otherwise specified Features • Switch & Attenuator Die • Extensive Selection of I-Region Lengths • Hermetic Glass Passivated CERMACHIP • Oxide Passivated Planar Chips
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SYLGARD
SYLGARD 539
MA47416-132
MA4P202-134
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7400A
Abstract: C-Band Power GaAs FET HEMT Chips electrostatic precipitator TIM6472-8 GAAS FET AMPLIFIER x-band 10w TPM2323-30 TIM5053-30L TPM1617 M7179 TPM1617-16
Text: TOSHIBA MICROWAVE POWER GaAs FET APPLICATION NOTES Recommended Assembly Methods for GaAs FET and HEMT Chip Form In assembling the GaAs FET and HEMT chips onto the microstrip circuits, the following die attaching and wire bonding methods are recommended. Precautions
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MA4P607-212
Abstract: MA4P165-134 MA47416-132 MA4P102-134 MA4P160-134 MA4P161-134 SYLGARD 539 MA4P504-132 MA4PK3000-1252 MA4P604-131
Text: RoHs Compliant Silicon PIN Diode Chips V 5.0 Absolute Maximum Ratings1 @ Ta = +25°C Unless otherwise specified Features • Switch & Attenuator Die • Extensive Selection of I-Region Lengths • Hermetic Glass Passivated CERMACHIP • Oxide Passivated Planar Chips
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200oC,
MA4P607-212
MA4P165-134
MA47416-132
MA4P102-134
MA4P160-134
MA4P161-134
SYLGARD 539
MA4P504-132
MA4PK3000-1252
MA4P604-131
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Abstract: No abstract text available
Text: Silicon PIN Chips V18 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Anode Switch & Attenuator Die Extensive Selection of I-Region Lengths Hermetic Glass Passivated CERMACHIP Oxide Passivated Planar Chips Voltage Ratings to 3000V Fast Switching Speed Low Loss
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tech time
Abstract: No abstract text available
Text: Silicon PIN Chips V19 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Anode Switch & Attenuator Die Extensive Selection of I-Region Lengths Hermetic Glass Passivated CERMACHIP Oxide Passivated Planar Chips Voltage Ratings to 3000V Fast Switching Speed Low Loss
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Untitled
Abstract: No abstract text available
Text: Silicon PIN Chips V20 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Anode Switch & Attenuator Die Extensive Selection of I-Region Lengths Hermetic Glass Passivated CERMACHIP Oxide Passivated Planar Chips Voltage Ratings to 3000V Fast Switching Speed Low Loss
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madp-000165-01340w
Abstract: No abstract text available
Text: Silicon PIN Chips V17 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Anode Switch & Attenuator Die Extensive Selection of I-Region Lengths Hermetic Glass Passivated CERMACHIP Oxide Passivated Planar Chips Voltage Ratings to 3000V Fast Switching Speed Low Loss
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MA4P7493-134
Abstract: sylgard 186 MA4P303 MA4P7493 MA4P506 -1072T MADP
Text: Silicon PIN Chips V20 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Anode Switch & Attenuator Die Extensive Selection of I-Region Lengths Hermetic Glass Passivated CERMACHIP Oxide Passivated Planar Chips Voltage Ratings to 3000V Fast Switching Speed Low Loss
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MXP400X
Abstract: 7400 family bonder 150-degree
Text: Application Note - MXP400x Wire bond InGaAs/InP PIN Photo Diode Family OPTO-ELECTRONIC PRODUCTS W W W. Microsemi .COM Guideline for wire bond to MXP400x bare die. Recommend Wedge Bond used. Wedge detail informations: * 45 degee wire feed angle. * .0015 in. hole size.
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MXP400x
400-15A-32-34
7400 family
bonder
150-degree
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MADP-000488-13740W
Abstract: 13X13 19X19 MA47416-132 MA47418-134 MA4P161-134 MA4P203-134 MA4P303-134 MA4P404-132 MA4P504-132
Text: Silicon PIN Chips V18 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Anode Switch & Attenuator Die Extensive Selection of I-Region Lengths Hermetic Glass Passivated CERMACHIP Oxide Passivated Planar Chips Voltage Ratings to 3000V Fast Switching Speed Low Loss
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SYLGARD
Abstract: No abstract text available
Text: Silicon PIN Chips RoHS Compliant V10 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Switch & Attenuator Die Extensive Selection of I-Region Lengths Hermetic Glass Passivated CERMACHIP Oxide Passivated Planar Chips Voltage Ratings to 3000V Fast Switching Speed
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Untitled
Abstract: No abstract text available
Text: Packaging - Handling Gallium Arsenide Die Handling Gallium Arsenide Die Gallium arsenide die have physical properties that require special care in assembly to ensure high yields and good reliability. A few simple precautions in the die mounting and wire bonding
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Untitled
Abstract: No abstract text available
Text: Chip Mounting and Handling of GaAs MMIC Chips CHIP DIE DOWN BONDING TECHNIQUES Die Attach The important considerations for die attach are to have low thermal resistance, strong mechanical bond over the desired temperature range, and no damage occurring to the chip
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7416a
Abstract: chip bonding die DIE BONDER
Text: HSXAWAVS Power FET Chip Handling Instruction Hexawave, Inc. Die Bonding Procedure Equipments and Tools 1. Die Bonder 2. Tweezers Type SS 3. Thermometer Procedure I. Perform all steps in a forcing N2gas environment. 2 Control the heated stage temperature within 310
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M45A-HW-1513-S-F
27NC/30NC:
26YC/26NC/34NC:
7416a
chip bonding die
DIE BONDER
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