Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DH50054 Search Results

    DH50054 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    DH50054 Temex MICROWAVE SILICON COMPONENTS Original PDF

    DH50054 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SILICON PIN DIODES Microwave applications ULTRAFAST SWITCHING SILICON PIN DIODES Description For ultrafast switching, these passivated mesa diodes have a thin I layer < 10 µm . Electrical characteristics CHIP AND PACKAGED DIODES CHIP DIODES Characteristics Gold Breakdown Junction


    Original
    PDF EH50072 EH50073 EH50074 EH50075 EH50076 EH50077 EH50101 EH50102 EH50103 EH50104

    EH76150 die

    Abstract: DH252 DH256 all diodes ratings step recovery diode dh252 temex dh292 DH315 DH303 DH324 DH312
    Text: SILICON MICROWAVE DIODES Step Recovery Diodes MICROWAVE SILICON MICROWAVE DIODES STEP RECOVERY DIODES All the detail specification shall be read in conjunction with ESA/SCC Generic Specification N° 5010, the special requirements are included in the detail specification.


    Original
    PDF ESA/SCC5512/016 DH252 DH256 DH292 DH267 ESA/SCC5512/016 EH76150 die DH252 DH256 all diodes ratings step recovery diode dh252 temex dh292 DH315 DH303 DH324 DH312

    dh50076

    Abstract: EH50052 M208
    Text: SILICON PIN DIODES Microwave applications ULTRAFAST SWITCHING SILICON PIN DIODES Description For ultrafast switching, these passivated mesa diodes have a thin I layer < 10 µm . Electrical characteristics CHIP AND PACKAGED DIODES CHIP DIODES Characteristics Gold Breakdown Junction


    Original
    PDF EH50033 EH50034 EH50035 EH50036 EH50037 EH50052 EH50053 EH50054 EH50055 EH50056 dh50076 M208

    dh50076

    Abstract: DH50037 M208
    Text: SILICON PIN DIODES Microwave applications Ultrafast switching silicon PIN diodes Description For ultrafast switching, these passivated mesa diodes have a thin I layer < 10 µm . Electrical characteristics CHIP AND PACKAGED DIODES CHIP DIODES Characteristics Gold Breakdown Junction


    Original
    PDF EH50033 EH50034 EH50035 EH50036 EH50037 EH50052 EH50053 EH50054 EH50055 EH50056 dh50076 DH50037 M208

    sqm1150

    Abstract: smd diode f54 sqm1250 DH60034 srd dh294 bh16 transistor step recovery diode dh252 temex DH252 M208 B1 DH294
    Text: MICROWAVE SILICON COMPONENTS Contents MICROWAVE SILICON COMPONENTS CONTENTS CONTENTS w e N f o t i y Spir nolog Tech PAGE INTRODUCTION / SYMBOLS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12-2 All specifications contained in that catalog are subject to change without notice.


    Original
    PDF