Untitled
Abstract: No abstract text available
Text: TMS465169, TMS465169P 4194304 BY 16ĆBIT EXTENDED DATA OUT DYNAMIC RANDOMĆACCESS MEMORIES SMHS566B − JUNE 1997 − REVISED APRIL 1998 DGE PACKAGE TOP VIEW D Organization . . . 4 194 304 by 16 Bits D Single 3.3-V Power Supply (± 0.3 V Tolerance) VCC
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TMS465169,
TMS465169P
SMHS566B
46x169/P-50
46x169/P-60
TMS46x169P)
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TMS465169
Abstract: TMS465169P
Text: TMS465169, TMS465169P 4194304 BY 16ĆBIT EXTENDED DATA OUT DYNAMIC RANDOMĆACCESS MEMORIES SMHS566B − JUNE 1997 − REVISED APRIL 1998 D Organization . . . 4 194 304 by 16 Bits D Single 3.3-V Power Supply ± 0.3 V DGE PACKAGE ( TOP VIEW Tolerance) D Performance Ranges:
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TMS465169,
TMS465169P
16BIT
SMHS566B
46x169/P-50
46x169/P-60
TMS46x169P)
TMS465169
TMS465169P
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD TDA7297 LINEAR INTEGRATED CIRCUIT 1 0 +1 0 W DU AL BRI DGE AM PLI FI ER DESCRI PT I ON The UTC TDA7297 is a dual bridge amplifier, it uses UTC advanced technology to provide customers with wide supply voltage, stand-by function, mute function, thermal overload
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TDA7297
TDA7297
HZIP-15D
TDA7297L-J15-D-T
TDA7297G-J15-D-T
QW-R105-044
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RF6026EA
Abstract: polar modulator fractional N PLL rf6026 GMSK modulator GSM Transceiver dcr gmsk transceiver DAC CORDIC SSB Modulator RF602
Text: RF6026EA/GA Quad-Band GSM/GPRS/E DGE Transceiver Module RF6026EA/GA Proposed QUAD-BAND GSM/GPRS/EDGE TRANSCEIVER MODULE RX EN SSB SDI SCLK LDTO E2 F3 C2 G4 F4 F5 G3 RX1900 A6 SAW / LNA Matching General Purpose Outputs Digital LO LNA4 RXEN Features Frac-N Digital GMSK Modulator
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RF6026EA/GA
RX1900
RX900
DSB060918
RF6026EA
polar modulator
fractional N PLL
rf6026
GMSK modulator
GSM Transceiver dcr
gmsk transceiver DAC
CORDIC
SSB Modulator
RF602
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TDA7266
Abstract: TDA7266L
Text: UNISONICTECHNOLOGIESCO., LTD TDA7266 LINEAR INTEGRATED CIRCUIT 7 +7 W DU AL BRI DGE AM PLI FI ER ̈ DESCRI PT I ON HZIP-15A The UTC TDA7266 is a 7+7W dual bridge amplifier specially designed for TV and Portable Radio applications. ̈ FEAT U RES * Wide Supply Voltage Range 3 ~ 18V
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TDA7266
HZIP-15A
TDA7266
HZIP-15B
HZIP-15D
TDA7266L-J15-A-T
TDA7266G-J15-A-T
TDA7266L-J15-B-T
TDA7266G-J15-B-T
TDA7266L-J15-D-T
TDA7266L
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TMS626162A
Abstract: No abstract text available
Text: TMS626162A 524ā288 BY 16ĆBIT BY 2ĆBANK SYNCHRONOUS DYNAMIC RANDOMĆACCESS MEMORY SMOS692B − JULY 1997 − REVISED MARCH 1998 D Organization D D D D D D D D D D D D D D D DGE PACKAGE TOP VIEW 512K x 16 Bits × 2 Banks 3.3-V Power Supply (± 10% Tolerance)
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TMS626162A
16BIT
SMOS692B
100-MHz
TMS626162A
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TMS626162A
Abstract: No abstract text available
Text: TMS626162A 524288 BY 16-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS692B – JULY 1997 – REVISED MARCH 1998 D D D D D D D D D D D D D D D D DGE PACKAGE TOP VIEW Organization 512K x 16 Bits × 2 Banks 3.3-V Power Supply (± 10% Tolerance)
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TMS626162A
16-BIT
SMOS692B
100-MHz
TMS626162A
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TMS626812
Abstract: No abstract text available
Text: TMS626812A 1 048 576 BY 8ĆBIT BY 2ĆBANK SYNCHRONOUS DYNAMIC RANDOMĆACCESS MEMORY SMOS691B − JULY 1997 − REVISED APRIL 1998 D Organization D D D D D D D D D D D D D D D D TMS626812A DGE PACKAGE TOP VIEW 1M Words x 8 Bits × 2 Banks 3.3-V Power Supply (± 10% Tolerance)
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TMS626812A
SMOS691B
100-MHz
TMS626812
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TMS626812A
Abstract: TMS626812
Text: TMS626812A 1 048 576 BY 8ĆBIT BY 2ĆBANK SYNCHRONOUS DYNAMIC RANDOMĆACCESS MEMORY SMOS691B − JULY 1997 − REVISED APRIL 1998 D Organization D D D D D D D D D D D D D D D D TMS626812A DGE PACKAGE TOP VIEW 1M Words x 8 Bits × 2 Banks 3.3-V Power Supply (± 10% Tolerance)
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TMS626812A
SMOS691B
100-MHz
TMS626812A
TMS626812
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TMS626812B
Abstract: TMS626812
Text: TMS626812B 1 048 576 BY 8ĆBIT BY 2ĆBANK SYNCHRONOUS DYNAMIC RANDOMĆACCESS MEMORIES SMOS693A − OCTOBER 1997 − REVISED APRIL 1998 D Organization D D D D D D D D D D D D D D D D D TMS626812B DGE PACKAGE TOP VIEW 1048576 by 8 Bits by 2 Banks 3.3-V Power Supply (± 10% Tolerance)
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TMS626812B
SMOS693A
125-MHz
TMS626812B
TMS626812
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frequency divider organs
Abstract: S10130 electronic organ
Text: S10130 AMERICAN MICROSYSTEMS, INC.I Features General Description □ Contains Six Binary D ividers □ T riggers on N egative-G oing E dge □ H igh Impedance Inputs The S10130 is a monolithic frequency divider circuit fabricated with P-Channel ion-implanted MOS technology.
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S10130
S10130
frequency divider organs
electronic organ
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SMOS182
Abstract: No abstract text available
Text: TMS626802, TMS636802 1048576-WORD BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS182 - FEBRUARY 1994 TM S626802 LVTTL DGE PACKAGE (TO P VIE W ) 3.3-V Power Supply (10% Tolerance) Two Banks for On-Chip Interleaving (Gapless Accesses) vcc [ 1
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TMS626802,
TMS636802
1048576-WORD
SMOS182
100-MHz
S626802
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TMS6264
Abstract: TMS626812
Text: TMS626412A, TMS626812A 2097152 BY 4-BIT BY 2-BANK, 1048576 BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS691A - JULY 1997 - REVISED OCTOBER 1997 TMS626412A DGE PACKAGE TOP VIEW 3.3-V Power Supply (±10% Tolerance) Two Banks for On-Chip Interleaving
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TMS626412A,
TMS626812A
SMOS691A
100-MHz
R-PDSO-G44)
TMS6264
TMS626812
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1995 AND sdram AND
Abstract: No abstract text available
Text: TMS626162 524288 BY 16-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS683E - FEBRUARY 1995 - REVISED APRIL 1997 Organization . . . 512K x 16 x 2 Banks 3.3-V Power Supply ±10% Tolerance Two Banks for On-Chip Interleaving (Gapless Accesses) DGE PACKAGE
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TMS626162
16-BIT
SMOS683E
83-MHz
1995 AND sdram AND
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pjuaa
Abstract: 1993 SDRAM 7216B
Text: 16 777 216 BIT SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY S M 0 S6 82-J A N U A R Y 1993 DGE PACKAG ET TOP VIEW Organization. . . 1M x 8 x 2 Banks 3.3 V-Power Supply (10% Tolerance) Two Banks For On-Chip Interleaving (Gapless Accesses) * High Bandwidth - Up to 100-MHz Data
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40must
pin35must
SDRAM-15
pjuaa
1993 SDRAM
7216B
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frequency divider organs
Abstract: S10129
Text: AMI S10129 AMERICAN MICROSYSTEMS, INC. Features General Description □ Contains S even Binary D ividers □ T riggers on N egative-G oing E dge □ H igh Im pedance Inputs T he S10129 is a m onolithic freq u e n c y d iv id e r circu it fa b ric ate d w ith P-Channel ion-im planted MOS technology.
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S10129
S10129
S101290
frequency divider organs
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Untitled
Abstract: No abstract text available
Text: SMJ626162 524288 BY 16-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY S G M S 737B -JU LY 1997-R E V IS E D APRIL 1998 Organization 512K x 16 Bits x 2 Banks 3.3-V Power Supply ±5% Tolerance Two Banks for On-Chip Interleaving (Gapless Accesses) DGE+/HKD PACKAGE
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SMJ626162
16-BIT
1997-R
83-MHz
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C108
Abstract: DGE MICRO C108D2 C108F1 C108Q1 C108Q2 C108Q3 C108Q4 C108U C108Y2
Text: DIGITRON O ELECTRONIC R e f e r e n c e Mb, CORP 3bE D 5fl4EtiD7 ODDODIM 3 ?< *> £ S a 6 tty '23 03 SiHcon Controlled Rectifier d^ . T v^ S'/S DGE Flat Pack Design Model C108 Up to 600 Volts 5 Amperes RM$j M A X IM U M A L L O W A B L E R A T IN G S C108
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C108Q1,
C108Q2,
C108Q3,
C108Q4
C108Y1,
C108Y2,
C108Y3,
C108Y4
C108F1,
C108F2,
C108
DGE MICRO
C108D2
C108F1
C108Q1
C108Q2
C108Q3
C108U
C108Y2
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C108F1
Abstract: "Silicon Controlled Rectifier" C108 C108F2 C108Q1 C108Q2 C108Q3 C108Q4 C108Y1 C108Y2
Text: DIGITRON ELECTRONIC CORP R e fe r e n c e J fb , 3hE D EflMEbD? a a D o a m 3 DGE $ A 6 TTY'2'3 O 0 3 Silicon Controlled Rectifier y T - J 5-/5 Flat Pack Design I,*»?,.rt M o d e l C 10 8 Up to 600 Volts 5 Amperes RM$j MAXIMUM ALLOW ABLE RATINGS c ía s
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C108Q1,
C108Q2,
C108Q3,
C108Q4
C108Y1,
C108Y2,
C108Y3,
C108Y4
C108F1,
C108F2,
C108F1
"Silicon Controlled Rectifier"
C108
C108F2
C108Q1
C108Q2
C108Q3
C108Q4
C108Y1
C108Y2
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C107
Abstract: SK 1117 11 ak 30 a4 C1071 "Silicon Controlled Rectifier" ME 1117 C-107
Text: DIGITRON ELECTRONIC CORP R e fe re n ce No. 3t,E D Xrê_1?:'é DGE SA-0.1-TY2 3 f O Q ,B i' y o "° 3 Silicon Controlled Rectifier cV Flat PackDesign 5 • Model C107 Up to 600 Volts 4 Amperes RMS C107 M A X IM U M A LLO W A BLE R A T IN G S R epetitive P eak O ff-Stale
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CI07YI
007V2
I07V4
CIH70
CI07C
C1071
C1071-
O07MI
CI07M4
50iUsec.
C107
SK 1117
11 ak 30 a4
C1071
"Silicon Controlled Rectifier"
ME 1117
C-107
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N07A
Abstract: C107 digitron
Text: DIGITRON ELECTRONIC CORP R e f e r e n c e No. afiMStiD? GD0DD13 1 • DGE 3bE D TVS-if fo o ,a SAG.1TVÏ2 3 ;r . i' O - 0 3 w / Silicon Controlled Rectifier 'J w Flat Pack Design * Model C107 Up to 600 Volts 4 Amperes RMS CIO 7 M A X IM U M A L L O W A B L E R A T IN G S
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GDGDG13
1TY23.
V111IM
CI0704
CI07YI
CI07Y2
CI07Y
UI07Y4
CI07I
CI07I-4
N07A
C107
digitron
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C106F2
Abstract: C106Y1 C106MI C106D1 c106f C106F1 C106Q1 C106M3 C106D2 C106Y4
Text: TjlGITRON ELECTRONIC CORP 3bE D • SflMgbO? □O DO Oi a~ T DGE _T’£ 5>/?_ R e f e r e n c e No. 'sÄ'0^ir.Y23 ■ .O - Silicon Controlled Rectifier r* gf o' Flat Pack Design V-'S Op to 600 Volts 4 Amperes RMS M A X IM U M C106 J 'Tj, Model C106 -u U W A B L E R A T IN G S
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C106Q1,
C106Q2,
C106Q3,
C106Q4
C106Y1,
C106Y2,
C106Y3,
C106Y4
C106F1,
C106F2,
C106F2
C106Y1
C106MI
C106D1
c106f
C106F1
C106Q1
C106M3
C106D2
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Untitled
Abstract: No abstract text available
Text: a Am7990 Local Area Network Controller for Ethernet LANCE Advanced Micro Devices DISTINCTIVE CHARACTERISTICS C om patible w ith Ethernet and IEEE-802.3 10Base5 Type A, and 10Base2 Type B, "C h e a p e rn e t") Easily interfaced to 8086, 68000, Z 8 0 0 0 , LSI-M™
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Am7990
IEEE-802
10Base5
10Base2
24-bit
07644B
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Untitled
Abstract: No abstract text available
Text: APR 2 2 19« 57, SGS-THOMSON IMS 1635 • y 8K X 8 CMOS SRAM VERY HIGH SPEED DOUBLE METAL CM OS SRAM ADVANCED PR O C ESS- 1.2 MICRON DESIGN RULES 8 K x 8 BIT ORGANISATION 15, 20, 25, 35ns ADDRESS ACCESS TIMES 15, 20, 25, 35ns CHIP ENABLE ACCESS TIMES 28 FULLY TTL COMPATIBLE
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PDIP28
PSOJ28
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