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    DGE MICRO Search Results

    DGE MICRO Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMPM3HMFYAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HPFYADFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP128-1420-0.50-001 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HLFYAUG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation

    DGE MICRO Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: TMS465169, TMS465169P 4194304 BY 16ĆBIT EXTENDED DATA OUT DYNAMIC RANDOMĆACCESS MEMORIES SMHS566B − JUNE 1997 − REVISED APRIL 1998 DGE PACKAGE TOP VIEW D Organization . . . 4 194 304 by 16 Bits D Single 3.3-V Power Supply (± 0.3 V Tolerance) VCC


    Original     		PDF TMS465169, TMS465169P SMHS566B 46x169/P-50 46x169/P-60 TMS46x169P)

    TMS465169

    Abstract: TMS465169P
    Text: TMS465169, TMS465169P 4194304 BY 16ĆBIT EXTENDED DATA OUT DYNAMIC RANDOMĆACCESS MEMORIES SMHS566B − JUNE 1997 − REVISED APRIL 1998 D Organization . . . 4 194 304 by 16 Bits D Single 3.3-V Power Supply ± 0.3 V DGE PACKAGE ( TOP VIEW Tolerance) D Performance Ranges:


    Original     		PDF TMS465169, TMS465169P 16BIT SMHS566B 46x169/P-50 46x169/P-60 TMS46x169P) TMS465169 TMS465169P

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD TDA7297 LINEAR INTEGRATED CIRCUIT 1 0 +1 0 W DU AL BRI DGE AM PLI FI ER  DESCRI PT I ON The UTC TDA7297 is a dual bridge amplifier, it uses UTC advanced technology to provide customers with wide supply voltage, stand-by function, mute function, thermal overload


    Original     		PDF TDA7297 TDA7297 HZIP-15D TDA7297L-J15-D-T TDA7297G-J15-D-T QW-R105-044

    RF6026EA

    Abstract: polar modulator fractional N PLL rf6026 GMSK modulator GSM Transceiver dcr gmsk transceiver DAC CORDIC SSB Modulator RF602
    Text: RF6026EA/GA Quad-Band GSM/GPRS/E DGE Transceiver Module RF6026EA/GA Proposed QUAD-BAND GSM/GPRS/EDGE TRANSCEIVER MODULE RX EN SSB SDI SCLK LDTO E2 F3 C2 G4 F4 F5 G3 RX1900 A6 SAW / LNA Matching General Purpose Outputs Digital LO LNA4 RXEN Features „ Frac-N Digital GMSK Modulator


    Original     		PDF RF6026EA/GA RX1900 RX900 DSB060918 RF6026EA polar modulator fractional N PLL rf6026 GMSK modulator GSM Transceiver dcr gmsk transceiver DAC CORDIC SSB Modulator RF602

    TDA7266

    Abstract: TDA7266L
    Text: UNISONICTECHNOLOGIESCO., LTD TDA7266 LINEAR INTEGRATED CIRCUIT 7 +7 W DU AL BRI DGE AM PLI FI ER ̈ DESCRI PT I ON HZIP-15A The UTC TDA7266 is a 7+7W dual bridge amplifier specially designed for TV and Portable Radio applications. ̈ FEAT U RES * Wide Supply Voltage Range 3 ~ 18V


    Original     		PDF TDA7266 HZIP-15A TDA7266 HZIP-15B HZIP-15D TDA7266L-J15-A-T TDA7266G-J15-A-T TDA7266L-J15-B-T TDA7266G-J15-B-T TDA7266L-J15-D-T TDA7266L

    TMS626162A

    Abstract: No abstract text available
    Text: TMS626162A 524ā288 BY 16ĆBIT BY 2ĆBANK SYNCHRONOUS DYNAMIC RANDOMĆACCESS MEMORY SMOS692B − JULY 1997 − REVISED MARCH 1998 D Organization D D D D D D D D D D D D D D D DGE PACKAGE TOP VIEW 512K x 16 Bits × 2 Banks 3.3-V Power Supply (± 10% Tolerance)


    Original     		PDF TMS626162A 16BIT SMOS692B 100-MHz TMS626162A

    TMS626162A

    Abstract: No abstract text available
    Text: TMS626162A 524288 BY 16-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS692B – JULY 1997 – REVISED MARCH 1998 D D D D D D D D D D D D D D D D DGE PACKAGE TOP VIEW Organization 512K x 16 Bits × 2 Banks 3.3-V Power Supply (± 10% Tolerance)


    Original     		PDF TMS626162A 16-BIT SMOS692B 100-MHz TMS626162A

    TMS626812

    Abstract: No abstract text available
    Text: TMS626812A 1 048 576 BY 8ĆBIT BY 2ĆBANK SYNCHRONOUS DYNAMIC RANDOMĆACCESS MEMORY SMOS691B − JULY 1997 − REVISED APRIL 1998 D Organization D D D D D D D D D D D D D D D D TMS626812A DGE PACKAGE TOP VIEW 1M Words x 8 Bits × 2 Banks 3.3-V Power Supply (± 10% Tolerance)


    Original     		PDF TMS626812A SMOS691B 100-MHz TMS626812

    TMS626812A

    Abstract: TMS626812
    Text: TMS626812A 1 048 576 BY 8ĆBIT BY 2ĆBANK SYNCHRONOUS DYNAMIC RANDOMĆACCESS MEMORY SMOS691B − JULY 1997 − REVISED APRIL 1998 D Organization D D D D D D D D D D D D D D D D TMS626812A DGE PACKAGE TOP VIEW 1M Words x 8 Bits × 2 Banks 3.3-V Power Supply (± 10% Tolerance)


    Original     		PDF TMS626812A SMOS691B 100-MHz TMS626812A TMS626812

    TMS626812B

    Abstract: TMS626812
    Text: TMS626812B 1 048 576 BY 8ĆBIT BY 2ĆBANK SYNCHRONOUS DYNAMIC RANDOMĆACCESS MEMORIES SMOS693A − OCTOBER 1997 − REVISED APRIL 1998 D Organization D D D D D D D D D D D D D D D D D TMS626812B DGE PACKAGE TOP VIEW 1048576 by 8 Bits by 2 Banks 3.3-V Power Supply (± 10% Tolerance)


    Original     		PDF TMS626812B SMOS693A 125-MHz TMS626812B TMS626812

    frequency divider organs

    Abstract: S10130 electronic organ
    Text: S10130 AMERICAN MICROSYSTEMS, INC.I Features General Description □ Contains Six Binary D ividers □ T riggers on N egative-G oing E dge □ H igh Impedance Inputs The S10130 is a monolithic frequency divider circuit fabricated with P-Channel ion-implanted MOS technology.


    OCR Scan     		PDF S10130 S10130 frequency divider organs electronic organ

    SMOS182

    Abstract: No abstract text available
    Text: TMS626802, TMS636802 1048576-WORD BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS182 - FEBRUARY 1994 TM S626802 LVTTL DGE PACKAGE (TO P VIE W ) 3.3-V Power Supply (10% Tolerance) Two Banks for On-Chip Interleaving (Gapless Accesses) vcc [ 1


    OCR Scan     		PDF TMS626802, TMS636802 1048576-WORD SMOS182 100-MHz S626802

    TMS6264

    Abstract: TMS626812
    Text: TMS626412A, TMS626812A 2097152 BY 4-BIT BY 2-BANK, 1048576 BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS691A - JULY 1997 - REVISED OCTOBER 1997 TMS626412A DGE PACKAGE TOP VIEW 3.3-V Power Supply (±10% Tolerance) Two Banks for On-Chip Interleaving


    OCR Scan     		PDF TMS626412A, TMS626812A SMOS691A 100-MHz R-PDSO-G44) TMS6264 TMS626812

    1995 AND sdram AND

    Abstract: No abstract text available
    Text: TMS626162 524288 BY 16-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS683E - FEBRUARY 1995 - REVISED APRIL 1997 Organization . . . 512K x 16 x 2 Banks 3.3-V Power Supply ±10% Tolerance Two Banks for On-Chip Interleaving (Gapless Accesses) DGE PACKAGE


    OCR Scan     		PDF TMS626162 16-BIT SMOS683E 83-MHz 1995 AND sdram AND

    pjuaa

    Abstract: 1993 SDRAM 7216B
    Text: 16 777 216 BIT SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY S M 0 S6 82-J A N U A R Y 1993 DGE PACKAG ET TOP VIEW Organization. . . 1M x 8 x 2 Banks 3.3 V-Power Supply (10% Tolerance) Two Banks For On-Chip Interleaving (Gapless Accesses) * High Bandwidth - Up to 100-MHz Data


    OCR Scan     		PDF 40must pin35must SDRAM-15 pjuaa 1993 SDRAM 7216B

    frequency divider organs

    Abstract: S10129
    Text: AMI S10129 AMERICAN MICROSYSTEMS, INC. Features General Description □ Contains S even Binary D ividers □ T riggers on N egative-G oing E dge □ H igh Im pedance Inputs T he S10129 is a m onolithic freq u e n c y d iv id e r circu it fa b ric ate d w ith P-Channel ion-im planted MOS technology.


    OCR Scan     		PDF S10129 S10129 S101290 frequency divider organs

    Untitled

    Abstract: No abstract text available
    Text: SMJ626162 524288 BY 16-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY S G M S 737B -JU LY 1997-R E V IS E D APRIL 1998 Organization 512K x 16 Bits x 2 Banks 3.3-V Power Supply ±5% Tolerance Two Banks for On-Chip Interleaving (Gapless Accesses) DGE+/HKD PACKAGE


    OCR Scan     		PDF SMJ626162 16-BIT 1997-R 83-MHz

    C108

    Abstract: DGE MICRO C108D2 C108F1 C108Q1 C108Q2 C108Q3 C108Q4 C108U C108Y2
    Text: DIGITRON O ELECTRONIC R e f e r e n c e Mb, CORP 3bE D 5fl4EtiD7 ODDODIM 3 ?< *> £ S a 6 tty '23 03 SiHcon Controlled Rectifier d^ . T v^ S'/S DGE Flat Pack Design Model C108 Up to 600 Volts 5 Amperes RM$j M A X IM U M A L L O W A B L E R A T IN G S C108


    OCR Scan     		PDF C108Q1, C108Q2, C108Q3, C108Q4 C108Y1, C108Y2, C108Y3, C108Y4 C108F1, C108F2, C108 DGE MICRO C108D2 C108F1 C108Q1 C108Q2 C108Q3 C108U C108Y2

    C108F1

    Abstract: "Silicon Controlled Rectifier" C108 C108F2 C108Q1 C108Q2 C108Q3 C108Q4 C108Y1 C108Y2
    Text: DIGITRON ELECTRONIC CORP R e fe r e n c e J fb , 3hE D EflMEbD? a a D o a m 3 DGE $ A 6 TTY'2'3 O 0 3 Silicon Controlled Rectifier y T - J 5-/5 Flat Pack Design I,*»?,.rt M o d e l C 10 8 Up to 600 Volts 5 Amperes RM$j MAXIMUM ALLOW ABLE RATINGS c ía s


    OCR Scan     		PDF C108Q1, C108Q2, C108Q3, C108Q4 C108Y1, C108Y2, C108Y3, C108Y4 C108F1, C108F2, C108F1 "Silicon Controlled Rectifier" C108 C108F2 C108Q1 C108Q2 C108Q3 C108Q4 C108Y1 C108Y2

    C107

    Abstract: SK 1117 11 ak 30 a4 C1071 "Silicon Controlled Rectifier" ME 1117 C-107
    Text: DIGITRON ELECTRONIC CORP R e fe re n ce No. 3t,E D Xrê_1?:'é DGE SA-0.1-TY2 3 f O Q ,B i' y o "° 3 Silicon Controlled Rectifier cV Flat PackDesign 5 • Model C107 Up to 600 Volts 4 Amperes RMS C107 M A X IM U M A LLO W A BLE R A T IN G S R epetitive P eak O ff-Stale


    OCR Scan     		PDF CI07YI 007V2 I07V4 CIH70 CI07C C1071 C1071- O07MI CI07M4 50iUsec. C107 SK 1117 11 ak 30 a4 C1071 "Silicon Controlled Rectifier" ME 1117 C-107

    N07A

    Abstract: C107 digitron
    Text: DIGITRON ELECTRONIC CORP R e f e r e n c e No. afiMStiD? GD0DD13 1 • DGE 3bE D TVS-if fo o ,a SAG.1TVÏ2 3 ;r . i' O - 0 3 w / Silicon Controlled Rectifier 'J w Flat Pack Design * Model C107 Up to 600 Volts 4 Amperes RMS CIO 7 M A X IM U M A L L O W A B L E R A T IN G S


    OCR Scan     		PDF GDGDG13 1TY23. V111IM CI0704 CI07YI CI07Y2 CI07Y UI07Y4 CI07I CI07I-4 N07A C107 digitron

    C106F2

    Abstract: C106Y1 C106MI C106D1 c106f C106F1 C106Q1 C106M3 C106D2 C106Y4
    Text: TjlGITRON ELECTRONIC CORP 3bE D • SflMgbO? □O DO Oi a~ T DGE _T’£ 5>/?_ R e f e r e n c e No. 'sÄ'0^ir.Y23 ■ .O - Silicon Controlled Rectifier r* gf o' Flat Pack Design V-'S Op to 600 Volts 4 Amperes RMS M A X IM U M C106 J 'Tj, Model C106 -u U W A B L E R A T IN G S


    OCR Scan     		PDF C106Q1, C106Q2, C106Q3, C106Q4 C106Y1, C106Y2, C106Y3, C106Y4 C106F1, C106F2, C106F2 C106Y1 C106MI C106D1 c106f C106F1 C106Q1 C106M3 C106D2

    Untitled

    Abstract: No abstract text available
    Text: a Am7990 Local Area Network Controller for Ethernet LANCE Advanced Micro Devices DISTINCTIVE CHARACTERISTICS C om patible w ith Ethernet and IEEE-802.3 10Base5 Type A, and 10Base2 Type B, "C h e a p e rn e t") Easily interfaced to 8086, 68000, Z 8 0 0 0 , LSI-M™


    OCR Scan     		PDF Am7990 IEEE-802 10Base5 10Base2 24-bit 07644B

    Untitled

    Abstract: No abstract text available
    Text: APR 2 2 19« 57, SGS-THOMSON IMS 1635 • y 8K X 8 CMOS SRAM VERY HIGH SPEED DOUBLE METAL CM OS SRAM ADVANCED PR O C ESS- 1.2 MICRON DESIGN RULES 8 K x 8 BIT ORGANISATION 15, 20, 25, 35ns ADDRESS ACCESS TIMES 15, 20, 25, 35ns CHIP ENABLE ACCESS TIMES 28 FULLY TTL COMPATIBLE


    OCR Scan     		PDF PDIP28 PSOJ28