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    TMS626162

    Abstract: No abstract text available
    Text: TMS626162 524288 BY 16-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS683E – FEBRUARY 1995 – REVISED APRIL 1997 D D D D D D D D D D D D D D D D Organization . . . 512K x 16 × 2 Banks 3.3-V Power Supply ± 10% Tolerance Two Banks for On-Chip Interleaving


    Original     		PDF TMS626162 16-BIT SMOS683E 83-MHz TMS626162

    diode ba10 equivalents

    Abstract: ACT-D1M96S
    Text: ACT-D1M96S High Speed 96 MegaBit 3.3V Synchronous DRAM Multichip Module Features • ■ ■ ■ ■ ■ ■ ■ 6 Low Power Texas Instruments 1M X 16 Synchronous Dynamic Random Access Memory Chips in one MCM User Configureable as "2" Independent 512K X 48 X 2


    Original     		PDF ACT-D1M96S 50-MHz MIL-PRF-38534 MIL-STD-883 SCD3369-1 diode ba10 equivalents

    1995 AND sdram AND

    Abstract: No abstract text available
    Text: TMS626162 524288 BY 16-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS683E - FEBRUARY 1995 - REVISED APRIL 1997 Organization . . . 512K x 16 x 2 Banks 3.3-V Power Supply ±10% Tolerance Two Banks for On-Chip Interleaving (Gapless Accesses) DGE PACKAGE


    OCR Scan     		PDF TMS626162 16-BIT SMOS683E 83-MHz 1995 AND sdram AND

    DQ85

    Abstract: No abstract text available
    Text: ACT-D1M96S High Speed 96 MegaBit 3.3V Synchronous DRAM I I I I I I Multichip Module - H eatures 6 Low Power Texas Instruments 1M X 16 Synchronous Dynamic Random Access Memory Chips in one MCM User Configureable as "2" Independent 512K X 48 X 2 Banks High-Speed, Low-Noise, Low-Voltage TTL LVTTL


    OCR Scan     		PDF ACT-D1M96S 50-MHz IL-PRF-38534 MIL-STD-883 SCD3369-1 DQ85

    3CK2C

    Abstract: Sth-56
    Text: TMS626162 524288-WORD BY 16-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY • • • • • • • Organization . . . 512K x 16 x 2 Banks 3.3-V Power Supply ± 10% Tolerance Two Banks for On-Chip Interleaving


    OCR Scan     		PDF TMS626162 524288-WORD 16-BIT SMOS683E 83-MHz 3CK2C Sth-56

    Untitled

    Abstract: No abstract text available
    Text: ACT-D1M96S High Speed 96 MegaBit 3.3V Synchronous DRAM I I I I I I Multichip Module H—H -eatures 6 Low Power Texas Instruments 1M X 16 Synchronous Dynamic Random Access Memory Chips in one MCM User Configureable as "2" Independent 512K X 48 X 2 Banks High-Speed, Low-Noise, Low-Voltage TTL LVTTL


    OCR Scan     		PDF ACT-D1M96S 50-MHz MIL-PRF-38534 MIL-STD-883 SCD3369-1