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    DEVICE SILICON TWIN TRANSISTOR Search Results

    DEVICE SILICON TWIN TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    DEVICE SILICON TWIN TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1658 NEC

    Abstract: SW SPDT FRS transceiver SW-SPDT upc8112tb 2SC5288 NE52418 RF basics NE5510279A discrete LNA D
    Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − April 2003 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF PX10020EJ08V0PF 1658 NEC SW SPDT FRS transceiver SW-SPDT upc8112tb 2SC5288 NE52418 RF basics NE5510279A discrete LNA D

    UPC8236

    Abstract: 2SC5508 NE3512S02 digital tv tuner hjfet NESG240033 SW SPDT NE5510279A antenna for microwave CATV materials ANTENNA parabolic
    Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − April 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF G0706 PX10020EJ39V0PF UPC8236 2SC5508 NE3512S02 digital tv tuner hjfet NESG240033 SW SPDT NE5510279A antenna for microwave CATV materials ANTENNA parabolic

    mobile phone basic block diagram

    Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
    Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF G0706 PX10020EJ41V0PF mobile phone basic block diagram PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    smd transistor 6b1

    Abstract: smd transistor marking zs BFS460L6 smd transistor marking sep smd transistor zl BFR460L3 6B1 transistor smd 6 pin
    Text: BFS460L6 NPN Silicon RF TWIN Transistor 4 Preliminary data • High fT of 22 GHz 3 5 • For low voltage / low current applications 2 6 • Ideal for VCO modules and low noise amplifiers 1 • Low noise figure: 1.1 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package


    Original     		PDF BFS460L6 BFR460L3) Sep-01-2003 smd transistor 6b1 smd transistor marking zs BFS460L6 smd transistor marking sep smd transistor zl BFR460L3 6B1 transistor smd 6 pin

    zs transistor

    Abstract: BFR460L3 BFS460L6 smd transistor marking zs smd transistor 6b1 smd transistor zl
    Text: BFS460L6 NPN Silicon RF TWIN Transistor 4 • High fT of 22 GHz 3 5 • For low voltage / low current applications 2 6 • Ideal for VCO modules and low noise amplifiers 1 • Low noise figure: 1.1 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package


    Original     		PDF BFS460L6 BFR460L3) Jun-15-2004 zs transistor BFR460L3 BFS460L6 smd transistor marking zs smd transistor 6b1 smd transistor zl

    smd transistor 6b1

    Abstract: smd transistor marking zs ZL 58 smd transistor zl BFR460L3 MARKING SMD NPN TRANSISTOR BR smd transistor 1c1 smd marking AB 6 PIN
    Text: BFS460L6 NPN Silicon RF TWIN Transistor 4 • High fT of 22 GHz 3 5 • For low voltage / low current applications 2 6 • Ideal for VCO modules and low noise amplifiers 1 • Low noise figure: 1.1 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package


    Original     		PDF BFS460L6 BFR460L3) Aug-04-2004 smd transistor 6b1 smd transistor marking zs ZL 58 smd transistor zl BFR460L3 MARKING SMD NPN TRANSISTOR BR smd transistor 1c1 smd marking AB 6 PIN

    Untitled

    Abstract: No abstract text available
    Text: BFS460L6 NPN Silicon RF TWIN Transistor 4 • High fT of 22 GHz 3 5 • For low voltage / low current applications 2 6 • Ideal for VCO modules and low noise amplifiers 1 • Low noise figure: 1.1 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package


    Original     		PDF BFS460L6 BFR460L3)

    RF MESFET S parameters

    Abstract: transistor GaAs FET s parameters NES2427P-30
    Text: 30 W S-BAND TWIN NES2427P-30 POWER GaAs MESFET FEATURES • • • • OUTLINE DIMENSIONS Units in mm HIGH OUTPUT POWER: 30 W TYP HIGH DRAIN EFFICIENCY: 38% TYP HIGH LINEAR GAIN: 12 dB TYP PUSH-PULL TYPE N-CHANNEL GaAS MESFET PACKAGE OUTLINE T-86 45° R1.2 ± 0.3


    Original     		PDF NES2427P-30 NES2427P-30 24-Hour RF MESFET S parameters transistor GaAs FET s parameters

    UPC8236

    Abstract: 2SC5508 2SC3357/NE85634 CATV MODULATOR NE5510279A upg2406t6r Microwave GaAs FET catalogue NE3515S02 NE662M04 NE3514S02
    Text: RF AND MICROWAVE DEVICES SYSTEM BLOCK DIAGRAMS www.renesas.com 2010.04 CONTENTS 1. INTRODUCTION . 3 1-1. Basic RF Blocks . 4


    Original     		PDF R09CA0001EJ0100 PX10020EJ42V0PF UPC8236 2SC5508 2SC3357/NE85634 CATV MODULATOR NE5510279A upg2406t6r Microwave GaAs FET catalogue NE3515S02 NE662M04 NE3514S02

    2SC5508

    Abstract: UPC3243 UPC8236 NE3509 NE3517S03 transistor 20107 800 Mhz Cordless Phone circuit diagram NESG270034 2SC4226 APPLICATION NOTES NE5510279A
    Text: RF AND MICROWAVE DEVICES SYSTEM BLOCK DIAGRAMS www.renesas.com 2010.10 CONTENTS 1. INTRODUCTION . 3 1-1. Basic RF Blocks . 4


    Original     		PDF R09CA0001EJ0300 2SC5508 UPC3243 UPC8236 NE3509 NE3517S03 transistor 20107 800 Mhz Cordless Phone circuit diagram NESG270034 2SC4226 APPLICATION NOTES NE5510279A

    SMD 6PIN IC MARKING CODE

    Abstract: SMD 6PIN IC MARKING CODE p marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE ag MARKING CODE SMD IC marking MARKING CODE SMD zs BFR460L3 BFS360L6 BFS36
    Text: BFS460L6 NPN Silicon RF TWIN Transistor* • High fT of 22 GHz 4 • For low voltage / low current applications 3 5 • Ideal for VCO modules and low noise amplifiers 2 6 1 • Low noise figure: 1.1 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package


    Original     		PDF BFS460L6 BFR460L3) SMD 6PIN IC MARKING CODE SMD 6PIN IC MARKING CODE p marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE ag MARKING CODE SMD IC marking MARKING CODE SMD zs BFR460L3 BFS360L6 BFS36

    K1 MARK 6PIN

    Abstract: TRANSISTOR SMD MARKING CODE 2x SMD 6PIN IC MARKING CODE marking code E2 p SMD Transistor Transistors smd mark code SMD MARKING code 1G SMD 6PIN IC MARKING CODE p marking 4B2 TRANSISTOR SMD MARKING CODE 2x I MARKING CODE SMD zs
    Text: BFS460L6 NPN Silicon RF TWIN Transistor 4 • High fT of 22 GHz 3 5 • For low voltage / low current applications 2 6 • Ideal for VCO modules and low noise amplifiers 1 • Low noise figure: 1.1 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package


    Original     		PDF BFS460L6 BFR460L3) K1 MARK 6PIN TRANSISTOR SMD MARKING CODE 2x SMD 6PIN IC MARKING CODE marking code E2 p SMD Transistor Transistors smd mark code SMD MARKING code 1G SMD 6PIN IC MARKING CODE p marking 4B2 TRANSISTOR SMD MARKING CODE 2x I MARKING CODE SMD zs

    marking code E2 p SMD Transistor

    Abstract: smd marking CODE 1c1 SMD 6PIN IC MARKING CODE p SMD 6PIN IC MARKING CODE 4b2 marking TRANSISTOR SMD MARKING CODE ag BFS36 transistor smd marking Ag
    Text: BFS460L6 NPN Silicon RF TWIN Transistor* • High fT of 22 GHz 4 • For low voltage / low current applications 3 5 • Ideal for VCO modules and low noise amplifiers 2 6 1 • Low noise figure: 1.1 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package


    Original     		PDF BFS460L6 BFR460L3) marking code E2 p SMD Transistor smd marking CODE 1c1 SMD 6PIN IC MARKING CODE p SMD 6PIN IC MARKING CODE 4b2 marking TRANSISTOR SMD MARKING CODE ag BFS36 transistor smd marking Ag

    RF MESFET S parameters

    Abstract: NES2427P-50
    Text: 50 W S-BAND TWIN NES2427P-50 POWER GaAs MESFET FEATURES • • • OUTLINE DIMENSIONS Units in mm HIGH OUTPUT POWER: 50 W TYP HIGH POWER ADDED EFFICIENCY: 38 % TYP HIGH LINEAR GAIN: 10 dB TYP PACKAGE OUTLINE T-86 45° R1.2 ± 0.3 2.4 ± 0.3 G1 G2 45° 11.4 ± 0.3


    Original     		PDF NES2427P-50 NES2427P-50 24-Hour RF MESFET S parameters

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    a 4x transistor

    Abstract: RF MESFET S parameters 500565 NES1823P-100 NES1823
    Text: PRELIMINARY DATA SHEET 100W L-BAND TWIN POWER GaAs MESFET NES1823P-100 OUTLINE DIMENSIONS Units in mm FEATURES • • • • HIGH OUTPUT POWER: 100 W TYP HIGH LINEAR GAIN: 11 dB TYP HIGH DRAIN EFFICIENCY: 50 % TYP @ VDS = 10 V, ID = 6 A, f = 2.2 GHz USABLE IN PUSH-PULL OR BALANCED


    Original     		PDF NES1823P-100 NES1823P-100 24-Hour a 4x transistor RF MESFET S parameters 500565 NES1823

    BFR460

    Abstract: No abstract text available
    Text: BFS466L6 NPN Silicon RF TWIN Transistor 4 Preliminary data • Low voltage/ low current applications 3 5 • Ideal for VCO modules and low noise amplifiers 2 6 • Low noise figure: TR1: 1.1dB at 1.8 GHz 1 TR2: 1.0 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package


    Original     		PDF BFS466L6 BFR460L3, BFR360L3) Sep-01-2003 BFR460

    BFR460L3

    Abstract: BFR949L3 BFS469L6 BFR94
    Text: BFS469L6 NPN Silicon RF TWIN Transistor 4 Preliminary data • Low voltage/ low current applications 3 5 • Ideal for VCO modules and low noise amplifiers 2 6 • Low noise figure: TR1: 1.1dB at 1.8 GHz 1 TR2: 1.5 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package


    Original     		PDF BFS469L6 BFR460L3, BFR949L3) BFR460L3 BFR949L3 BFS469L6 BFR94

    BFR36

    Abstract: smd transistor marking ZS BFR360L3 BFR460L3 BFS466L6 TR2 SMD TR235
    Text: BFS466L6 NPN Silicon RF TWIN Transistor 4 Preliminary data • Low voltage/ low current applications 3 5 • Ideal for VCO modules and low noise amplifiers 2 6 • Low noise figure: TR1: 1.1dB at 1.8 GHz 1 TR2: 1.0 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package


    Original     		PDF BFS466L6 BFR460L3, BFR360L3) Sep-01-2003 BFR36 smd transistor marking ZS BFR360L3 BFR460L3 BFS466L6 TR2 SMD TR235

    smd tr1

    Abstract: BFR460L3 BFR949L3 BFS469L6 BFR94
    Text: BFS469L6 NPN Silicon RF TWIN Transistor 4 Preliminary data • Low voltage/ low current applications 3 5 • Ideal for VCO modules and low noise amplifiers 2 6 • Low noise figure: TR1: 1.1dB at 1.8 GHz 1 TR2: 1.5 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package


    Original     		PDF BFS469L6 BFR460L3, BFR949L3) Sep-01-2003 smd tr1 BFR460L3 BFR949L3 BFS469L6 BFR94

    UPA75HA

    Abstract: Pa75ha upa75 IC353 NEC 701 UPA75H VCE-60 GE10000 k 3531 transistor transistor K 3531
    Text: NEC PNP SILICON TWIN TRANSISTOR ELECTRON DEVICE //PA75HA DESCRIPTION PACKAGE DIMENSIONS The juPA75HA is designed fo r use in the to p stage fo r differential am p lifie r o f an EQ amp. and a stereo main amp. in m illim eters inches FEATURES • Excellent pair balance


    OCR Scan     		PDF uPA75HA J22686 --14--83M RS39726 Pa75ha upa75 IC353 NEC 701 UPA75H VCE-60 GE10000 k 3531 transistor transistor K 3531

    z63n

    Abstract: t28000 z65n 07in M6008 mitsubishi lable fr1s MITSUBISHI GATE ARRAY z66n R12W
    Text: A m itsu b ish i ELECTRO N IC DEVICE GROUP P R E LIM IN A R Y M6008X 0.8 Jim CMOS GATE ARRAYS Mitsubishi M6008X Series 0.8 Jim CMOS Gate Arrays INTRODUCTION Mitsubishi offers sub-m icron CMOS Gate Arrays us­ ing a 0.8 micron drawn twin well silicon gate process


    OCR Scan     		PDF M6008X MDS-GA-02-03-91 z63n t28000 z65n 07in M6008 mitsubishi lable fr1s MITSUBISHI GATE ARRAY z66n R12W

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 100W L-BAND TWIN POWER GaAs MESFET NES1823P-100 OUTLINE DIMENSIONS Units in mm FEATURES • HIGH OUTPUT POWER: 1 0 0 W T Y P • HIGH LINEAR GAIN: 11 d B T Y P • HIGH DRAIN EFFICIENCY: 50 % TYP @ V ds = 10 V, I d = 6 A, f = 2.2 GHz


    OCR Scan     		PDF NES1823P-100 NES1823P-100 24-Hour