202378A
Abstract: No abstract text available
Text: APPLICATION NOTE Output Filter Design for EMI Rejection of the AAT5101 Class D Audio Amplifier The AAT5101 is a high efficiency, 2.5W mono class D audio power amplifier. It can be used in portable devices, such as MP4s, cell phones, laptops, GPS and PDAs. The device can work as a filterless class D amplifier that can operate with
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AAT5101
02378A
202378A
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ELECTRO MAGNETIC INTERFERENCE CONTROL TECHNIQUES
Abstract: CLASS D AUDIO AMPLIFIER AAT5101 audio amplifier pcb layout emi rejection bead filter AN-131 CLASS D Ferrite Bead anten switch
Text: APPLICATION NOTE AN-131 AAT5101: Output Filter Design for Class D Audio Amplifier EMI Rejection The AAT5101 is a high efficiency, 2.5W mono class D audio power amplifier. It can be used in portable devices, such as MP4s, cell phones, laptops, GPS and PDAs. The device can work as a filterless class D amplifier that can operate with
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AN-131
AAT5101:
AAT5101
AN-131
ELECTRO MAGNETIC INTERFERENCE CONTROL TECHNIQUES
CLASS D AUDIO AMPLIFIER
audio amplifier pcb layout
emi rejection
bead filter
CLASS D
Ferrite Bead
anten switch
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Untitled
Abstract: No abstract text available
Text: PXAC261202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 – 2690 MHz Description The PXAC261202FC is a 120-watt LDMOS FET with an asymetric design for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. It features dual-path design,
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PXAC261202FC
PXAC261202FC
120-watt
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UMK325C7106MMT
Abstract: No abstract text available
Text: PXAC241702FC Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 – 2400 MHz Description The PXAC241702FC is a 28 V LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features include dual-path design, high gain and thermally-enhanced package
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PXAC241702FC
PXAC241702FC
UMK325C7106MMT
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atc100B100GT500XT
Abstract: MRF21010 ATC100B0R5BT500XT ATC100B102JT50XT MRF21010LSR1 T491D106K035AT Nippon capacitors Nippon chemi
Text: Freescale Semiconductor Technical Data NOT RECOMMENDED FOR NEW DESIGN RF Power Field Effect Transistor MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21010LSR1
MRF21010
atc100B100GT500XT
ATC100B0R5BT500XT
ATC100B102JT50XT
MRF21010LSR1
T491D106K035AT
Nippon capacitors
Nippon chemi
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CRCW08051001FKEA
Abstract: TLX8-0300 C-XM-99-001-01 pd cms NIPPON CAPACITORS bourns 3224w FM LDMOS freescale transistor atc100B100GT500XT marking us capacitor pf l1 MRF21010
Text: Document Number: MRF21010-2 Rev. 11, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor NOT RECOMMENDED FOR NEW DESIGN Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21010--2
MRF21010LSR1
CRCW08051001FKEA
TLX8-0300
C-XM-99-001-01
pd cms
NIPPON CAPACITORS
bourns 3224w
FM LDMOS freescale transistor
atc100B100GT500XT
marking us capacitor pf l1
MRF21010
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low frequency automatic gain control
Abstract: TQ7641
Text: RF Wireless Products 1850 – 1910 MHz High-Efficiency 3 Volt PCS Power Amplifier The TQ7641 is packaged in a small, low-cost, power TSSOP-20 plastic package. The part is designed to require minimal external circuitry for matching and bias, simplifying design and
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TQ7641
PCS-1900
TSSOP-20
TQ9114
low frequency automatic gain control
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J499
Abstract: No abstract text available
Text: PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for
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PXAC201202FC
PXAC201202FC
120-watt
H-37248-4
28ances.
J499
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Untitled
Abstract: No abstract text available
Text: PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for
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PXAC201202FC
PXAC201202FC
120-watt
H-37248-4
pxac201202fc-gr1a
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Untitled
Abstract: No abstract text available
Text: PTAC240502FC Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz Description The PTAC240502FC is a 47-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency
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PTAC240502FC
PTAC240502FC
47-watt
H-37248-4
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Untitled
Abstract: No abstract text available
Text: PTAC240502FC Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz Description The PTAC240502FC is a 47-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency
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PTAC240502FC
PTAC240502FC
47-watt
H-37248-4
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Untitled
Abstract: No abstract text available
Text: PXAC261002FC Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 – 2690 MHz Description The PXAC261002FC is a 100-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. Features
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PXAC261002FC
PXAC261002FC
100-watt
H-37248-4
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Untitled
Abstract: No abstract text available
Text: PTAC210802FC Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz Description The PTAC210802FC is an 80-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features
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PTAC210802FC
PTAC210802FC
80-watt
H-37248-4
c210802fc-gc
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Untitled
Abstract: No abstract text available
Text: PXAC260602FC Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 – 2690 MHz Description The PXAC260602FC is a 60-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features
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PXAC260602FC
PXAC260602FC
60-watt
H-37248-4
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Untitled
Abstract: No abstract text available
Text: PXAC260602FC Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 – 2690 MHz Description The PXAC260602FC is a 60-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features
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PXAC260602FC
PXAC260602FC
60-watt
H-37248-4
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Untitled
Abstract: No abstract text available
Text: PTAC210802FC Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz Description The PTAC210802FC is an 80-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features
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PTAC210802FC
PTAC210802FC
80-watt
H-37248-4
c210802fc-gc
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Untitled
Abstract: No abstract text available
Text: PXAC261212FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 – 2690 MHz Description The PXAC261212FC is a 120-watt LDMOS FET with an asymmetric designed for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. It features dual-path design,
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PXAC261212FC
PXAC261212FC
120-watt
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Untitled
Abstract: No abstract text available
Text: PTVA093002TC Thermally-Enhanced High Power RF LDMOS FET 300 W, 50 V, 703 – 960 MHz Description The PTVA093002TC is a 300-watt LDMOS FET. Designed for use in multi-standard cellular power amplifier applications, it can be used as single-ended or in a Doherty configuration. It features dual-path design,
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PTVA093002TC
PTVA093002TC
300-watt
50-ohm
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF19120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor NOT RECOMMENDED FOR NEW DESIGN Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN- PCS/cellular radio and WLL applications.
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MRF19120/D
MRF19120
MRF19120/D
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ofdm predistortion
Abstract: CGH21120 transistors cross reference cgh40120F Digital Transistors Cross Reference CGH25120F RF power transistors cross reference GaN on SiC HEMT Pulsed Power Transistor Peak digital Pre-distortion Gan hemt transistor
Text: May 2009 Short range wireless UWB GPS and satellite GaN HEMT transistors Advances in high power GaN HEMT transistors By Simon Wood, Carl Platis, Don Farrell, Brad Millon, Bill Pribble, Peter Smith, Ray Pengelly, and Jim Milligan, Cree Inc. G allium nitride (GaN) HEMT based
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bandpass filter for GPS L1 front end
Abstract: design bandpass filter for GPS radar match filter design TUNABLE FILTER Tunable-bandpass-filter bandpass filter for GPS gps transponder gps lna gps filter l1
Text: Filtered Low Noise GPS Amplifier Spectrum Microwave, Inc Walter E. Gordon CTO Summary A new GPS low noise amplifier has been developed which offers the user performance flexibility in amplifying either L1 1575 MHz or L1 and L2 (1227 MHz) GPS signals. Through the use of modular assembly and model-specific
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CH2903-3/90/0000-0532
bandpass filter for GPS L1 front end
design bandpass filter for GPS
radar match filter design
TUNABLE FILTER
Tunable-bandpass-filter
bandpass filter for GPS
gps transponder
gps lna
gps filter l1
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4G base station power amplifier
Abstract: lna 2.5 GHZ s parameter ads design FR4 dielectric constant 4.6 matching with smith chart common base amplifier circuit designing GaAs 0.15 pHEMT VT-47 Simulation of 3 phase common mode choke
Text: WHITE PAPER Ultra-Low Noise Figure, High Gain Amplifier with High Linearity Introduction Infrastructure receiver applications for cellular/3G, ISM, GPS, WiMAX/4G, automotive applications, and satellite radio require Low-Noise Amplifiers LNAs with very low Noise Figures (NF),
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01087A
4G base station power amplifier
lna 2.5 GHZ s parameter ads design
FR4 dielectric constant 4.6
matching with smith chart
common base amplifier circuit designing
GaAs 0.15 pHEMT
VT-47
Simulation of 3 phase common mode choke
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MJ15003 300 watts amplifier
Abstract: NCP1337 MJE15035 mj15024 MJ*15033 NJL0281D NJL1302D MJ15024-MJ15025 mjl4281 spdt sot363 rf
Text: A high-quality audio experience is becoming more important in a wide variety of different end products and ON Semiconductor has and is continuing to develop solutions to address a diverse set of customers’ problems, be it in a portable GPS receiver, a digital music player, or a professional audio
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BRD8038-4
BRD8038/D
MJ15003 300 watts amplifier
NCP1337
MJE15035
mj15024
MJ*15033
NJL0281D
NJL1302D
MJ15024-MJ15025
mjl4281
spdt sot363 rf
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET SKY65088: 1.575 GHz GPS Low Noise Amplifier Applications VBIAS ENABLE VCC x GPS radio receivers Bias/Control Features x Small signal gain: 16 dB x Low Noise Figure: 1.0 dB x IIP3: 0 dBm x Minimal number of external components required
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SKY65088:
J-STD-020)
SKY65088
01154A
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