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    DEPLETION P-CHANNEL MOSFET Search Results

    DEPLETION P-CHANNEL MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    DEPLETION P-CHANNEL MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GBAN-PVI-1

    Abstract: ca3103 266CT125-3E2A IR7509 ic cd4093 oscillator with CD4093 Types dc to dc chopper zener in4148 240XT250-3EA2 IRF540 complementary
    Text: Index AN-937 v.Int Gate Drive Characteristics and Requirements for HEXFET s Topics covered: Gate drive vs base drive Enhancement vs Depletion N vs P-Channel Max gate voltage Zener diodes on gate? The most important factor in gate drive: the impedance of the gate drive circuit


    Original     		PDF AN-937 500ns/div GBAN-PVI-1 ca3103 266CT125-3E2A IR7509 ic cd4093 oscillator with CD4093 Types dc to dc chopper zener in4148 240XT250-3EA2 IRF540 complementary

    266CT125-3E2A

    Abstract: GBAN-PVI-1 240XT250-3EA2 HEXFET Power MOSFET designer manual CD4093 CD4093 IC details IRF540 complementary ca3103 IR7509 Toroid 3E2A
    Text: AN-937 v.Int Gate Drive Characteristics and Requirements for HEXFET s Topics covered: Gate drive vs base drive Enhancement vs Depletion N vs P-Channel Max gate voltage Zener diodes on gate? The most important factor in gate drive: the impedance of the gate drive circuit


    Original     		PDF AN-937 500ns/div 266CT125-3E2A GBAN-PVI-1 240XT250-3EA2 HEXFET Power MOSFET designer manual CD4093 CD4093 IC details IRF540 complementary ca3103 IR7509 Toroid 3E2A

    P-Channel Depletion Mosfets

    Abstract: mosfet 2N3796 2N3797 2N3796 MFE825 MFE3002 P-Channel Depletion Mosfet depletion mode mosfet 100 MHz MFE3003 N5484
    Text: MOSFETs Single Gate FIELD-EFFECT TRANSISTORS continued P-CHANNEL Enhancement MOSFETs MOSFETs are available in either depletion/enhancement or enhancement mode (in general, depletion/enhancement devices are operated in the depletion mode and are referred to as depletion devices). They are available in both N- and P-channel,


    OCR Scan     		PDF 2N5486 2N4416 2N4416A 2N5245 3N128* P-Channel Depletion Mosfets mosfet 2N3796 2N3797 2N3796 MFE825 MFE3002 P-Channel Depletion Mosfet depletion mode mosfet 100 MHz MFE3003 N5484

    Depletion MOSFET

    Abstract: switching transistor 331 b771D n channel depletion MOSFET N-Channel Depletion-Mode MOSFET BSD12 free transistor gbs transistor convertor 5 V to -5 V Depletion
    Text: 711Gä2t> Q0b770ö 217 • P H I N BSD12 MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon M OS field-effect transistor o f the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		PDF BSD12 Depletion MOSFET switching transistor 331 b771D n channel depletion MOSFET N-Channel Depletion-Mode MOSFET BSD12 free transistor gbs transistor convertor 5 V to -5 V Depletion

    Untitled

    Abstract: No abstract text available
    Text: DMCD N-Channel _ Depletion-Mode MOSFET in c o r p o r a te d DEVICE TYPE PACKAGE Single TO-72 TO-206AF • SD2100 Single Chip • Available as DMCD1CHP TYPICAL CHARACTERISTICS Depletion Mode - Drain Current & On-Reslstance vs. Gate-Source Cutoff Voltage


    OCR Scan     		PDF O-206AF) SD2100 -----10V.

    Untitled

    Abstract: No abstract text available
    Text: bbS3=i31 002544=1 =105 * A P X BSD22 b7E D N AMER PHI LIP S/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a SOT-143 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		PDF BSD22 OT-143

    SD2100

    Abstract: No abstract text available
    Text: SD2100 N-Channel Depletion-Mode Lateral DMOS FET in c o r p o ra t e d The SD2100 is a depletion-mode MOSFET which utilizes our lateral DMOS process to provide low capacitance, fast switching, and high operating frequency. This DMOS process effectively bridges the


    OCR Scan     		PDF SD2100 O-206AF)

    Untitled

    Abstract: No abstract text available
    Text: BEE D • flE3b320 0017173 4 « S I P SIPMOS N Channel MOSFET T - S á M S" SIEMENS/ SPCLi SEMICONDS • SIPMOS - depletion mode • Draln-source voltage • Continuous drain current Vas = 250V /„ = 0.04A • Drain-source on-resistance • Total power dissipation


    OCR Scan     		PDF flE3b320 Q62702-S612 001717b T-a6-25

    BF960

    Abstract: transistor BF960 BF-960 transistor BG 20
    Text: 711002b Püb7531 fi3 a H P H IN BF960 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected, intended fo r use in u.h.f. applications in television tuners and professional communication equipment.


    OCR Scan     		PDF DDb7S31 BF960 800MHz BF960 transistor BF960 BF-960 transistor BG 20

    Untitled

    Abstract: No abstract text available
    Text: • P hilips Sem iconductors Data sheet status Product specification date of issue October 1990 FEATURES • Short channel transistor with high ratio lYfSI/C15. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor


    OCR Scan     		PDF 0023k. BF998R lYfSI/C15. OT143R bbS3T31

    Untitled

    Abstract: No abstract text available
    Text: 32E D • Ö23b32ü 0017107 s m s i p BSP 149 SIPMOS N Channel MOSFET T - 3 *7 Preliminary Data • SIPMOS - depletion mode • Drain-source voltage • Continuous drain current • Drain-source on-resistance • Total power dissipation Type M arking O rdering code for


    OCR Scan     		PDF 23b32Ã Q67000-S071 00A//Ã -100V 00A/MS

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. LND150 N-Channel Depletion-Mode MOSFET Ordering Information Order Number / Package BVDSX / ^DS ON Idss b v dgx (max) (min) TO-92 TO-243AA* Die 500V 1.0K& 1.0mA LND150N3 LND150N8 LND150ND * Sam e as SO T-89. P roduct shipped on 2000 piece c a rrie r tape reels.


    OCR Scan     		PDF LND150 O-243AA* LND150N3 LND150N8 LND150ND

    N-Channel Depletion-Mode MOSFET

    Abstract: TA 7061 52426 ND2020L
    Text: Temic ND2012L/2020L Semiconductors N-Channel Depletion-Mode MOSFET Transistors Product Summary P a rt N um ber V<BR DSV M in V) ND2012L ND2020L 200 Features • • • • • High Breakdown Voltage: 220 V Normally “On” Low rDS Switch: 9 Q Low Input and Output Leakage


    OCR Scan     		PDF ND2012L/2020L ND2012L ND2020L O-226AA S-52426--Rev. 14-Apr-97 N-Channel Depletion-Mode MOSFET TA 7061 52426

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. LND150 N-Channel Depletion-Mode MOSFET Ordering Information Order Number / Package b v dsx/ ^DS ON Idss b v dgx (max) (min) TO-92 TO-243AA* Die 500V 1.0KQ 1.0mA LND150N3 LND150N8 LND150ND * Sam e as SO T-89. P roduct shipped on 2000 piece c a rrie r tape reels.


    OCR Scan     		PDF LND150 O-243AA* LND150N3 LND150N8 LND150ND

    Untitled

    Abstract: No abstract text available
    Text: bbS3^31 00547S3 111 « A P X N AMER PHILIPS/DISCRETE BF997 b7E ]> SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic S 0T143 microminiature envelope with source and substrate interconnected, intended for u.h.f. and v.h.f. applications, such as u.h.f./v.h.f. television


    OCR Scan     		PDF 00547S3 BF997 0T143

    BF981

    Abstract: bf981 TRANSISTOR Transistor BF981 DUAL GATE MOS-FET Z826 AGT transistor
    Text: 7110fl2b G0b7SS3 MTT • P H I N BF981 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected, intended for V H F applications, such as V H F television tuners, FM tuners and professional communi-'


    OCR Scan     		PDF 7110fl2b BF981 BF981 bf981 TRANSISTOR Transistor BF981 DUAL GATE MOS-FET Z826 AGT transistor

    N-Channel Depletion-Mode MOSFET high voltage

    Abstract: pc 817 A - mosfet gate drive mosfet to-92 n-channel 20 volt
    Text: S u p e r t e x inc. LND150 /jrfÌN N-Channel Depletion-Mode vHg/ MOSFET Ordering Information _ Order Num ber / Package BVdsx/ ^DS ON I dss BV dox (max) (min) TO-92 TO-243AA* Die 500V 1.0KQ 1.0mA LND150N3 LND150N8 LND150ND * Sam e a s SOT-89. Product shipped on 2000 piece carrie r tape reels.


    OCR Scan     		PDF LND150 LND150N3 O-243AA* LND150N8 LND150ND OT-89. N-Channel Depletion-Mode MOSFET high voltage pc 817 A - mosfet gate drive mosfet to-92 n-channel 20 volt

    marking code 11G1

    Abstract: No abstract text available
    Text: b b S B ' m 0DE4750 462 « A P X N AMER PHILIPS/DISCRETE BF996S b7E » y v . SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended for UHF applications in television tuners.


    OCR Scan     		PDF 0DE4750 BF996S OT143 marking code 11G1

    BF980

    Abstract: BF980A SOT-103 transistor SOT103 mosfet
    Text: Tlioaab C0b7547 ITS M P H I N BF980A SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected. Intended fo r UHF applications, such as UHF television tuners, w ith 12 V supply voltage and professional


    OCR Scan     		PDF cob7547 BF980A BF980 BF980A SOT-103 transistor SOT103 mosfet

    marking code 11G1

    Abstract: No abstract text available
    Text: • bbSB'iai 0024733 3T3 « A P X N AMER PHILIPS/DISCRETE BF990A b7E » SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected, intended for UHF applications, such as UHF television tuners with 12 V


    OCR Scan     		PDF BF990A OT143 bb53T31 0Q2473b marking code 11G1

    BF981

    Abstract: bf981 TRANSISTOR sot103
    Text: 7110fl2b G0b7S53 MTT « P H I N BF981 J v _ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected, intended fo r VHF applications, such as VHF television tuners, FM tuners and professional com m uni­


    OCR Scan     		PDF 7110fl2b G0b7S53 BF981 7110fl2b 00b7SS7 7Z82691 7Z82690 711Dfl2b BF981 bf981 TRANSISTOR sot103

    depletion MOSFET

    Abstract: BSD22 n mosfet depletion transistor MARKING CODE RJ
    Text: bb53^31 □QSSMM'Î ^05 HIAPX • N AUER PHILIPS/DISCRETE BSD22 b?E D J MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR S ym m etrical insulated-gate silicon MOS fre ld -e ffe ct tran sisto r o f the n-channel d e p le tio n m ode type. The tran sisto r is sealed in a SO T-143 envelope and features a lo w ON-resistance and lo w capacitances.


    OCR Scan     		PDF BSD22 OT-143 7Z90790 depletion MOSFET BSD22 n mosfet depletion transistor MARKING CODE RJ

    BF994S

    Abstract: L7E transistor n Power mosfet depletion free transistor bs 200
    Text: bbS3T31 CmE3Li2S MST APX BF994S N AP1ER P H I L I P S / D I S C R E T E b?E I SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 m icrom iniature envelope w ith source and substrate interconnected and intended fo r VHF applications in television tuners.


    OCR Scan     		PDF bbS3T31 BF994S OT143 BF994S L7E transistor n Power mosfet depletion free transistor bs 200

    BF982

    Abstract: Transistor BF982 335kW Marking G2 SOT103
    Text: 711Dfl2fcj GGtTSbl S7S M P H I N BF982 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended for V H F applications, such as V H F television tuners, F M tuners, with 12 V supply voltage.


    OCR Scan     		PDF 711002t, BF982 BF982 Transistor BF982 335kW Marking G2 SOT103