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    DEC2000 Search Results

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    DEC2000 Price and Stock

    Abracon Corporation AMPMDEC-20.0000T

    MEMS Crystal Oscillator 20MHz ±50ppm 4-Pin SMD T/R - Tape and Reel (Alt: AMPMDEC-20.0000T)
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    Avnet Americas AMPMDEC-20.0000T Reel 1,000
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    Avnet Abacus AMPMDEC-20.0000T 113 Weeks 1,000
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    Abracon Corporation AMPMDEC-20.0000T3

    MEMS Crystal Oscillator 20MHz ±50ppm 4-Pin SMD T/R - Tape and Reel (Alt: AMPMDEC-20.0000T3)
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    Avnet Americas AMPMDEC-20.0000T3 Reel 3,000
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    Mouser Electronics AMPMDEC-20.0000T3
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    Avnet Abacus AMPMDEC-20.0000T3 113 Weeks 3,000
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    Abracon Corporation AMPMDEC-20.0000

    MEMS Crystal Oscillator 20MHz ±50ppm 4-Pin SMD Bulk - Bulk (Alt: AMPMDEC-20.0000)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas AMPMDEC-20.0000 Bulk 1,000
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    Avnet Abacus AMPMDEC-20.0000 113 Weeks 1,000
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    DEC2000 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN9321

    Abstract: AN9322 ISL9N312ASK8T MS-012AA TB334 N312AS
    Text: ISL9N312ASK8T Data Sheet January 2002 30V, 0.012 Ohm, 11A, N-Channel Logic Level UltraFET Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. PWM Optimized Features


    Original     		PDF ISL9N312ASK8T ISL9N312ASK8 MS-012AA AN9321 AN9322 ISL9N312ASK8T MS-012AA TB334 N312AS

    Untitled

    Abstract: No abstract text available
    Text: PWM Optimized ISL9N308AP3/ISL9N308AS3ST N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 8mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.


    Original     		PDF ISL9N308AP3/ISL9N308AS3ST 2600pF O-263AB O-220

    inkjet print head driver

    Abstract: PLCC44 L6451 L6451013TR L6451DIE8 thermal head inkjet
    Text: L6451 28 channel inkjet driver Features • Multipower BCD technology ■ 40 V DMOS output breakdown ■ Precise output energy ■ ESD output protection with clamping diodes ■ Very low quiescent current ■ PLCC44 package Description The L6451 is realized in Multipower BCD


    Original     		PDF L6451 PLCC44 L6451 PLCC44 L6451013TR L6451DIE8 inkjet print head driver L6451013TR L6451DIE8 thermal head inkjet

    7030BL

    Abstract: 5S1A
    Text: ISL9N7030BLP3, ISL9N7030BLS3ST TM Data Sheet January 2001 File Number 30V, 0.009 Ohm, 75A, N-Channel Logic Level UltraFET Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.


    Original     		PDF ISL9N7030BLP3, ISL9N7030BLS3ST 7030BL 5S1A

    cvbs to usb converter ic

    Abstract: vga to usb converter ic nagravision conax compression mpeg 1 layer 2 ofdm adsl
    Text: BUSINESS UNIT MULTIMEDIA MPEG2 decoder with 20 Mbit embedded SDRAM RAMPEG MB87P2030 High Performance System / Low System Cost < Very high Level of Integration < embedded SDRAM - 20 Mbit < two ARCs @ 108MHz < High Performance Display Controller < two Color Encoder


    Original     		PDF MB87P2030 108MHz Dec2000 MB87P2030 cvbs to usb converter ic vga to usb converter ic nagravision conax compression mpeg 1 layer 2 ofdm adsl

    ON Semiconductor marking

    Abstract: Analog devices assembly code marking Information MARKING ON Semiconductor semiconductor body marking on semiconductor marking code PO marking code 8 lead soic package East marking ON Semiconductor on semiconductor traceability marking soic semiconductor cross reference
    Text: Match PMS 5395 BRD8014/D Rev. 0, Dec-2000 ON Semiconductor Part Marking Transition Brochure East Greenwich Based Products ON Semiconductor ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF BRD8014/D Dec-2000 r14525 ON Semiconductor marking Analog devices assembly code marking Information MARKING ON Semiconductor semiconductor body marking on semiconductor marking code PO marking code 8 lead soic package East marking ON Semiconductor on semiconductor traceability marking soic semiconductor cross reference

    n308ad

    Abstract: ISL9N308AD3ST N-308 35KP ISL9N308AD3
    Text: PWM Optimized ISL9N308AD3 / ISL9N308AD3ST N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 8mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.


    Original     		PDF ISL9N308AD3 ISL9N308AD3ST 2600pF O-251AA) O-252 O-252) n308ad ISL9N308AD3ST N-308 35KP

    N308AP

    Abstract: 35KP ISL9N308AP3 ISL9N308AS3ST
    Text: PWM Optimized ISL9N308AP3/ISL9N308AS3ST N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 8mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.


    Original     		PDF ISL9N308AP3/ISL9N308AS3ST 2600pF O-263AB N308AP 35KP ISL9N308AP3 ISL9N308AS3ST

    ncp1400

    Abstract: NCP1400ASN33T1 NCP1400ASN50T1 "pin to pin" 4422 datasheet MC33466 NCP1400ASN19T1 NCP1400ASN27T1 NCP1400ASN30T1 dc-dc step-up converter sot
    Text: NPFSNCP1400/D Rev. 1, Dec-2000 New Product Fact Sheet NCP1400 – Micropower PWM Step-Up DC-DC Converter Overview The NCP1400 is a Micropower Pulse Width Modulator PWM StepUp DC-DC Converter that reduces current consumption in handheld games, pagers, cellular phones, digital cameras and industrial


    Original     		PDF NPFSNCP1400/D Dec-2000 NCP1400 NCP1400 MC33466. r14525 NCP1400ASN33T1 NCP1400ASN50T1 "pin to pin" 4422 datasheet MC33466 NCP1400ASN19T1 NCP1400ASN27T1 NCP1400ASN30T1 dc-dc step-up converter sot

    phase failure / phase reversal

    Abstract: MC33501 MC33501SNT1 MC33502 MC33503 MC33503SNT1
    Text: NPFSMC33501/D Rev. 1, Dec-2000 New Product Fact Sheet MC33501/03 – Single Rail-to-Rail Operational Amplifiers Overview The MC33501 and MC33503 are the world’s first and only ultra-low voltage operational amplifiers that can be powered from a single NiCd,


    Original     		PDF NPFSMC33501/D Dec-2000 MC33501/03 MC33501 MC33503 r14525 phase failure / phase reversal MC33501SNT1 MC33502 MC33503SNT1

    7030bl

    Abstract: AN7254 AN7260 ISL9N7030BLP3 ISL9N7030BLS3ST TB334
    Text: ISL9N7030BLP3, ISL9N7030BLS3ST Data Sheet January2002 30V, 0.009 Ohm, 75A, N-Channel Logic Level UltraFET Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves


    Original     		PDF ISL9N7030BLP3, ISL9N7030BLS3ST January2002 O-263AB ISL9N7030BLP3 O-220AB 7030bl AN7254 AN7260 ISL9N7030BLP3 ISL9N7030BLS3ST TB334

    A10N

    Abstract: HP34420A M25022 a16N A33N A12N A15N LLQ1608 R27N a82n
    Text: TOKO 【 LLQ1608 】 DIMENSIONS / 外 形 寸 法 図 PROVISIONAL 暫 （ Unit ： mm ） 1.02 max. チップインダクタ Recommended PCB Pattern 推奨パターン図 0.76 FEATURES / 特 0.33 0.64 0.64 0.64 0.86 1.8 max. 0.33 1.12 max. Chip Inductors 定


    Original     		PDF LLQ1608 Dec-2000 LLQ1608- HP4286A HP16193) A10N HP34420A M25022 a16N A33N A12N A15N LLQ1608 R27N a82n

    N-308A

    Abstract: TO-252 MOSFET
    Text: PWM Optimized ISL9N308AD3ST N-Channel Logic Level UltraFET Trench MOSFET 30V, 50A, 8mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		PDF ISL9N308AD3ST 2600pF O-252 N-308A TO-252 MOSFET

    n308ad

    Abstract: N-308
    Text: PWM Optimized ISL9N308AD3ST/ ISL9N308AD3 N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 8mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.


    Original     		PDF ISL9N308AD3ST/ ISL9N308AD3 2600pF O-252 O-252) O-251AA) n308ad N-308

    N-308

    Abstract: n308ad *n308ad
    Text: PWM Optimized ISL9N308AD3ST N-Channel Logic Level UltraFET Trench MOSFET 30V, 50A, 8mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		PDF ISL9N308AD3ST 2600pF O-252 N-308 n308ad *n308ad

    n308ad

    Abstract: N-308
    Text: ISL9N308AD3ST TM Data Sheet January 2001 File Number 30V, 0.008 Ohm, 50A, N-Channel Logic Level UltraFET Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves


    Original     		PDF ISL9N308AD3ST 2600pF n308ad N-308

    Untitled

    Abstract: No abstract text available
    Text: NPFSNCT22/D Rev. 0, Dec-2000 New Product Fact Sheet NCT22, NCT24 – Single Trip Point Temperature Sensors Overview The NCT22 and NCT24 devices are programmable solid state temperature sensors designed to replace mechanical switches in sensing and control applications. They are operational from 4.5 V to


    Original     		PDF NPFSNCT22/D Dec-2000 NCT22, NCT24 NCT22 NCT24 NCT22) NCT24) NCT22: NCT24:

    FTR-8519-3

    Abstract: fdb-1012 finisar fdb-1012 GBIC EVALUATION BOARD finisar "gbic evaluation board" finisar gbic evaluation board finisar application notes fdb finisar gigabit GBIC MODULE DEC2000
    Text: FTR-8519-3 Finisar NEW! Optical Ultimate GBIC Transceiver Module High-Performance “Smart” Gigabit Interface Converter Fibre Channel Gigabit Ethernet ! Up to 1.25 Gbit/sec bi-directional data links ! Built-in diagnostics ! 850 nm VCSEL ! Extended operating


    Original     		PDF FTR-8519-3 FDB-1012 DEC2000 MM1207 FTR-8519-3 fdb-1012 finisar fdb-1012 GBIC EVALUATION BOARD finisar "gbic evaluation board" finisar gbic evaluation board finisar application notes fdb finisar gigabit GBIC MODULE DEC2000

    N312A

    Abstract: AN9321 ISL9N312ASK8T MS-012AA TB334
    Text: ISL9N312ASK8T Data Sheet 30V, 0.012 Ohm, 11A, N-Channel Logic Level UltraFET Trench Power MOSFETs March 2001 File Number 5034 PWM Optimized [ /Title This device employs a new advanced trench MOSFET ISL9 technology and features low gate charge while maintaining


    Original     		PDF ISL9N312ASK8T N312A ISL9N312ASK8 AN9321 ISL9N312ASK8T MS-012AA TB334

    Untitled

    Abstract: No abstract text available
    Text: W AI V I N G IS UNPUBLISHED. RE L EAS ED fOR BY T-TCO E LE C TR O NI CS C O R P O R A T I O N . * 11 RE V I S I O N S P U BLICA T IO N RI G,<T5 R E S ER VE D . DE SCR I P 1 ION FIRST ITEM NO PART N U MB E R 1 1- 1 3 3 7 5 9 7 -0 50 1337768-1 SHR I N K 3 1 3 37 7 15-5


    OCR Scan     		PDF 21DECOO DEC2000

    Untitled

    Abstract: No abstract text available
    Text: 2 THIS DRAWI NG IS UNPUBLISHED. C O P Y R I G H T 20 R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S C O R P O R A T I O N . A L L 20 LOC 00 CM R 1G H T S R E S E RV E D. R EV 1S I O N S DIST P LTR H R E V I S E D PER 0 G 3 B - 0 2 5 7 - 0


    OCR Scan     		PDF 20-APR-0I 29NOV2007 0IDEC2000 DEC2000

    FA7700V

    Abstract: FA7701V flyback PWM tssop8
    Text: Quality is our message FUJI Power Supply Control 1C FA7 7 0 0 V/0 1 V Application Note Dec-2000 Fuji Bectric Co., Ltd. Matsumoto Factory FUJI Quality is our message r WARNING " \ 1.This Data Book contains the product specifications, characteristics, data, materials, and structures as of Dec


    OCR Scan     		PDF FA7700V/01V Dec-2000 500kHz, 500kHz) FA7700V FA7701V flyback PWM tssop8

    GOI 94v-0

    Abstract: No abstract text available
    Text: 2 THIS £L DRAWING IS UNPUBLISHED. C O P Y R I G H T 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR 20 PUBLICATION R 1G H T S LOC RESERVED. DIST R E V I S I O N S 00 CM LTR DESCRIPTION REVISED PER DATE 0G3B- 0257 - 0 I E C O - 07 - 0 2 8 3 7 4 PARTS


    OCR Scan     		PDF 20-APR-0I 29NOV2007 3IMAR2000 GOI 94v-0

    DEC2000

    Abstract: IDEC2000
    Text: 2 THIS DRAWING IS UNPUBLISHED. C O P Y R I G HT 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION RIGHTS LOC CM RESERVED. REV I S I ONS D I ST 00 LTR DE S C R I P T I O N DWN DATE R E V I S E D PE R OG 3 B - 0 2 57 - 0 I APVD CJ 2 0 - APR -


    OCR Scan     		PDF 0G3B-0257-0I 20-APR-01 IDEC2000 DEC2000 3imar200Ã