DEC2000 Search Results

AN9321

Abstract: AN9322 ISL9N312ASK8T MS-012AA TB334 N312AS
Contextual Info: ISL9N312ASK8T Data Sheet January 2002 30V, 0.012 Ohm, 11A, N-Channel Logic Level UltraFET Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. PWM Optimized Features

Contextual Info: PWM Optimized ISL9N308AP3/ISL9N308AS3ST N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 8mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

inkjet print head driver

Abstract: PLCC44 L6451 L6451013TR L6451DIE8 thermal head inkjet
Contextual Info: L6451 28 channel inkjet driver Features • Multipower BCD technology ■ 40 V DMOS output breakdown ■ Precise output energy ■ ESD output protection with clamping diodes ■ Very low quiescent current ■ PLCC44 package Description The L6451 is realized in Multipower BCD

7030BL

Abstract: 5S1A
Contextual Info: ISL9N7030BLP3, ISL9N7030BLS3ST TM Data Sheet January 2001 File Number 30V, 0.009 Ohm, 75A, N-Channel Logic Level UltraFET Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

cvbs to usb converter ic

Abstract: vga to usb converter ic nagravision conax compression mpeg 1 layer 2 ofdm adsl
Contextual Info: BUSINESS UNIT MULTIMEDIA MPEG2 decoder with 20 Mbit embedded SDRAM RAMPEG MB87P2030 High Performance System / Low System Cost < Very high Level of Integration < embedded SDRAM - 20 Mbit < two ARCs @ 108MHz < High Performance Display Controller < two Color Encoder

Contextual Info: W AI V I N G IS UNPUBLISHED. RE L EAS ED fOR BY T-TCO E LE C TR O NI CS C O R P O R A T I O N . * 11 RE V I S I O N S P U BLICA T IO N RI G,<T5 R E S ER VE D . DE SCR I P 1 ION FIRST ITEM NO PART N U MB E R 1 1- 1 3 3 7 5 9 7 -0 50 1337768-1 SHR I N K 3 1 3 37 7 15-5

ON Semiconductor marking

Abstract: Analog devices assembly code marking Information MARKING ON Semiconductor semiconductor body marking on semiconductor marking code PO marking code 8 lead soic package East marking ON Semiconductor on semiconductor traceability marking soic semiconductor cross reference
Contextual Info: Match PMS 5395 BRD8014/D Rev. 0, Dec-2000 ON Semiconductor Part Marking Transition Brochure East Greenwich Based Products ON Semiconductor ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

Contextual Info: 2 THIS DRAWI NG IS UNPUBLISHED. C O P Y R I G H T 20 R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S C O R P O R A T I O N . A L L 20 LOC 00 CM R 1G H T S R E S E RV E D. R EV 1S I O N S DIST P LTR H R E V I S E D PER 0 G 3 B - 0 2 5 7 - 0

n308ad

Abstract: ISL9N308AD3ST N-308 35KP ISL9N308AD3
Contextual Info: PWM Optimized ISL9N308AD3 / ISL9N308AD3ST N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 8mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

N308AP

Abstract: 35KP ISL9N308AP3 ISL9N308AS3ST
Contextual Info: PWM Optimized ISL9N308AP3/ISL9N308AS3ST N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 8mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

ncp1400

Abstract: NCP1400ASN33T1 NCP1400ASN50T1 "pin to pin" 4422 datasheet MC33466 NCP1400ASN19T1 NCP1400ASN27T1 NCP1400ASN30T1 dc-dc step-up converter sot
Contextual Info: NPFSNCP1400/D Rev. 1, Dec-2000 New Product Fact Sheet NCP1400 – Micropower PWM Step-Up DC-DC Converter Overview The NCP1400 is a Micropower Pulse Width Modulator PWM StepUp DC-DC Converter that reduces current consumption in handheld games, pagers, cellular phones, digital cameras and industrial

phase failure / phase reversal

Abstract: MC33501 MC33501SNT1 MC33502 MC33503 MC33503SNT1
Contextual Info: NPFSMC33501/D Rev. 1, Dec-2000 New Product Fact Sheet MC33501/03 – Single Rail-to-Rail Operational Amplifiers Overview The MC33501 and MC33503 are the world’s first and only ultra-low voltage operational amplifiers that can be powered from a single NiCd,

FA7700V

Abstract: FA7701V flyback PWM tssop8
Contextual Info: Quality is our message FUJI Power Supply Control 1C FA7 7 0 0 V/0 1 V Application Note Dec-2000 Fuji Bectric Co., Ltd. Matsumoto Factory FUJI Quality is our message r WARNING " \ 1.This Data Book contains the product specifications, characteristics, data, materials, and structures as of Dec

7030bl

Abstract: AN7254 AN7260 ISL9N7030BLP3 ISL9N7030BLS3ST TB334
Contextual Info: ISL9N7030BLP3, ISL9N7030BLS3ST Data Sheet January2002 30V, 0.009 Ohm, 75A, N-Channel Logic Level UltraFET Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves

A10N

Abstract: HP34420A M25022 a16N A33N A12N A15N LLQ1608 R27N a82n
Contextual Info: TOKO 【 LLQ1608 】 DIMENSIONS / 外 形 寸 法 図 PROVISIONAL 暫 （ Unit ： mm ） 1.02 max. チップインダクタ Recommended PCB Pattern 推奨パターン図 0.76 FEATURES / 特 0.33 0.64 0.64 0.64 0.86 1.8 max. 0.33 1.12 max. Chip Inductors 定

N-308A

Abstract: TO-252 MOSFET
Contextual Info: PWM Optimized ISL9N308AD3ST N-Channel Logic Level UltraFET Trench MOSFET 30V, 50A, 8mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching

n308ad

Abstract: N-308
Contextual Info: PWM Optimized ISL9N308AD3ST/ ISL9N308AD3 N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 8mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

N7030

Abstract: 7030bl 0262A
Contextual Info: ISL9N7030BLP3, ISL9N7030BLS3ST Data Sheet 30V, 0.009 Ohm, 75A, N-Channel Logic Level UltraFET Trench Power MOSFETs March 2001 File Number 5027.1 PWM Optimized [ /Title This device employs a new advanced trench MOSFET ISL9 technology and features low gate charge while maintaining

N-308

Abstract: n308ad *n308ad
Contextual Info: PWM Optimized ISL9N308AD3ST N-Channel Logic Level UltraFET Trench MOSFET 30V, 50A, 8mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching

n308ad

Abstract: N-308
Contextual Info: ISL9N308AD3ST TM Data Sheet January 2001 File Number 30V, 0.008 Ohm, 50A, N-Channel Logic Level UltraFET Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves

Contextual Info: NPFSNCT22/D Rev. 0, Dec-2000 New Product Fact Sheet NCT22, NCT24 – Single Trip Point Temperature Sensors Overview The NCT22 and NCT24 devices are programmable solid state temperature sensors designed to replace mechanical switches in sensing and control applications. They are operational from 4.5 V to

FTR-8519-3

Abstract: fdb-1012 finisar fdb-1012 GBIC EVALUATION BOARD finisar "gbic evaluation board" finisar gbic evaluation board finisar application notes fdb finisar gigabit GBIC MODULE DEC2000
Contextual Info: FTR-8519-3 Finisar NEW! Optical Ultimate GBIC Transceiver Module High-Performance “Smart” Gigabit Interface Converter Fibre Channel Gigabit Ethernet ! Up to 1.25 Gbit/sec bi-directional data links ! Built-in diagnostics ! 850 nm VCSEL ! Extended operating

N312A

Abstract: AN9321 ISL9N312ASK8T MS-012AA TB334
Contextual Info: ISL9N312ASK8T Data Sheet 30V, 0.012 Ohm, 11A, N-Channel Logic Level UltraFET Trench Power MOSFETs March 2001 File Number 5034 PWM Optimized [ /Title This device employs a new advanced trench MOSFET ISL9 technology and features low gate charge while maintaining

DEC2000

Abstract: IDEC2000
Contextual Info: 2 THIS DRAWING IS UNPUBLISHED. C O P Y R I G HT 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION RIGHTS LOC CM RESERVED. REV I S I ONS D I ST 00 LTR DE S C R I P T I O N DWN DATE R E V I S E D PE R OG 3 B - 0 2 57 - 0 I APVD CJ 2 0 - APR -