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    ISL9N308AD3 Price and Stock

    Rochester Electronics LLC ISL9N308AD3

    N-CHANNEL POWER MOSFET
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    DigiKey ISL9N308AD3 Bulk 919
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    onsemi ISL9N308AD3

    MOSFET N-Ch UltraFET Trench Logic Level - Bulk (Alt: ISL9N308AD3)
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    Avnet Americas ISL9N308AD3 Bulk 4 Weeks 1,106
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    Fairchild Semiconductor Corporation ISL9N308AD3

    50A, 30V, 0.008ohm, N-Channel Power MOSFET, TO-251AA '
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    Rochester Electronics ISL9N308AD3 14,400 1
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    ISL9N308AD3 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    ISL9N308AD3 Fairchild Semiconductor N-Channel Logic Level UltraFET R Trench Power MOSF Original PDF
    ISL9N308AD3ST Fairchild Semiconductor N-Channel Logic Level UltraFET R Trench Power MOSF Original PDF
    ISL9N308AD3ST_NL Fairchild Semiconductor N-Channel Logic Level UltraFET Trench Power MOSFETs Original PDF

    ISL9N308AD3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    n308ad

    Abstract: ISL9N308AD3ST N-308 35KP ISL9N308AD3
    Text: PWM Optimized ISL9N308AD3 / ISL9N308AD3ST N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 8mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.


    Original     		PDF ISL9N308AD3 ISL9N308AD3ST 2600pF O-251AA) O-252 O-252) n308ad ISL9N308AD3ST N-308 35KP

    N-308A

    Abstract: TO-252 MOSFET
    Text: PWM Optimized ISL9N308AD3ST N-Channel Logic Level UltraFET Trench MOSFET 30V, 50A, 8mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		PDF ISL9N308AD3ST 2600pF O-252 N-308A TO-252 MOSFET

    n308ad

    Abstract: N-308
    Text: PWM Optimized ISL9N308AD3ST/ ISL9N308AD3 N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 8mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.


    Original     		PDF ISL9N308AD3ST/ ISL9N308AD3 2600pF O-252 O-252) O-251AA) n308ad N-308

    N-308

    Abstract: n308ad *n308ad
    Text: PWM Optimized ISL9N308AD3ST N-Channel Logic Level UltraFET Trench MOSFET 30V, 50A, 8mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		PDF ISL9N308AD3ST 2600pF O-252 N-308 n308ad *n308ad

    n308ad

    Abstract: N-308
    Text: ISL9N308AD3ST TM Data Sheet January 2001 File Number 30V, 0.008 Ohm, 50A, N-Channel Logic Level UltraFET Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves


    Original     		PDF ISL9N308AD3ST 2600pF n308ad N-308

    FDC6331

    Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
    Text: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3


    Original     		PDF 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


    Original     		PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    igbt inverter welder schematic

    Abstract: SCHEMATIC 1000w smps 48V SMPS 1000w 24V 10A SMPS smps 500w half bridge smps 1000W full bridge mosfet smps 48V 100w SMPS inverter welder schematic half bridge converter 2kw
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Discrete Solutions for Power Supplies Across the board. Around the world. Discrete Solutions for Power Supplies Fairchild Semiconductor is one of the world’s leading providers of Discrete Power Products, including Metal Oxide Semiconductor Field


    Original     		PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    IRFU210A

    Abstract: IRFU230A FDU3706 FDU6030BL FDU6512A FDU6612A FDU6644 FDU6680A FDU6692 FDU7030BL
    Text: Discrete MOSFET TO-251 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-251(IPAK) N-Channel FDU3706 20 Single 0.009 0.011 0.016 - 16 50 44 FDU6512A 20 Single - 0.021 0.031


    Original     		PDF O-251 O-251 FDU3706 FDU6512A ISL9N308AD3 ISL9N312AD3 ISL9N306AD3 FDU6644 FDU6680A FDU7037P06 IRFU210A IRFU230A FDU3706 FDU6030BL FDU6512A FDU6612A FDU6644 FDU6680A FDU6692 FDU7030BL

    DPAK JEDEC OUTLINE

    Abstract: 12SNOFC Tamac4 eme6600cs KFC 1/2H 90Pb10Sn ISL9N2357D3ST application notes ISL9N306AD TAMAC-4 fdd6512a
    Text: Date Created: 3/3/2004 Date Issued: 3/11/2004 PCN # 20033404-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		PDF 0033404-A fairchildsem419D3ST HUF76429D3S HUF76609D3S HUF76619D3S HUF76629D3S ISL9N306AD3 ISL9N308AD3 ISL9N310AD3ST ISL9N315AD3 DPAK JEDEC OUTLINE 12SNOFC Tamac4 eme6600cs KFC 1/2H 90Pb10Sn ISL9N2357D3ST application notes ISL9N306AD TAMAC-4 fdd6512a

    SSP6N60A

    Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A

    FQPf10N60C

    Abstract: FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08
    Text: Discrete BGA BVDSS Min. V Config. 20 RDS(ON) Max (Ω) @ VGS = 10V 4.5V 2.5V 1.8V Qg Typ. (nC) @VGS = 5V Single – 0.027 0.039 – 7 6 1.7 20 Single – 0.018 0.03 – 11 7.5 1.6 FDZ201N 20 Single – 0.018 0.03 – 11 9 2 FDZ209N 60 Single – 0.08@5V


    Original     		PDF FDZ201N FDZ209N FDZ2553N FDZ2553NZ FDZ2551N FDZ7064N SFF9140 FQAF47P06 SSF10N60B SSF7N60B FQPf10N60C FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08

    Untitled

    Abstract: No abstract text available
    Text: ISL9N308AP3, ISL9N308AS3ST TM Data Sheet January 2001 File Number 30V, 0.008 Ohm, 75A, N-Channel Logic Level UltraFET Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.


    Original     		PDF ISL9N308AP3, ISL9N308AS3ST