A622
Abstract: EDI8F3264C 4e31 29x010
Text: W D _ EDI8F3264C I ELECTRONIC DESIGNS INC. High Speed Two Megabit SRAM Module 64Kx32 Static RAM CMOS, High Speed Module Features The EDI8F3264C is a high speed 2 megabit Static RAM module organized as 64Kx 32. This module is constructed from eight 64Kx4 Static RAMs in SOJ packages on an
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EDI8F3264C
64Kx32
EDI8F3264C
64Kx4
oooaaoooocJoacH30oaaoo^
0QQ1717
A622
4e31
29x010
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Untitled
Abstract: No abstract text available
Text: 2 Megabit High Speed CM OS SRAM D E N S E -P A C DPS256S8BN MICROSYSTEMS D ESCRIPTIO N : The DPS256S8BN is a high speed military 256K x 8 high-density, static RAM module comprised of two high speed ceramic 128K x 8 monolithicSRAM's, an advanced high-speed CMOS decoder and decoupling
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DPS256S8BN
DPS256S8BN
600-mil-wide,
32-pin
A0-A17
California92841-1428
00D1720
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Untitled
Abstract: No abstract text available
Text: IBM014400 IBM014400M IBM014400B IBM014400P 1 M x 4 10/10 DRAM Features • 1,048,576 word by 4 bit organization • Power Dissipation - Active max - 85 mA / 70 mA (5.0V) - 95 mA / 80 mA (3.3V) - Standby Current: TTL Inputs (max) - 2.0 mA (SP version) - 1.0 mA (LP version)
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IBM014400
IBM014400M
IBM014400B
IBM014400P
27H4339
SA14-4219-03
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sm08 diode
Abstract: SM12CXC220 CXC220 DDD171S westinghouse overload YS100
Text: ' 34 9709955 WESTCODE DEl^TtmSS SEM ICONDUCTORS 34C 01712 D 7 ^ 0 / - 2-3 D0 Q171 5 b I \ Technical Publication WESTCODE ® SEMICONDUCTORS DFC220 Issue 1 February 1981 Fast Recovery Capsule Diode Type CXC220 860 amperes average: up to 1600 volts V RRM R atings
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D0D1715
CXC220
DFC220
0460A
1000-2000Kgf
200AB
sm08 diode
SM12CXC220
DDD171S
westinghouse overload
YS100
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