P21096
Abstract: 208-MIL P2075
Text: RELIABILITY MONITOR DS1000M-25 NOV.'97 MONITOR-OMEDATA DEVICE REVISION DATE CODE LOT NUMBER PACKAGE ASSEMBLY SITE DS1000 E3 9727 DD711504ABA 8 PIN PDIP OMEDATA PROCESS Single Poly, Single Metal 1.2 µ Standard Process JOB NO DESCRIPT Cf: 60% Ea: 0.7 β: 1
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DS1000M-25
DS1000
DD711504ABA
P20931
P20962
P21300
P21353
P21354
P21355
P21356
P21096
208-MIL
P2075
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P-20964
Abstract: 9727
Text: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1000M-25 Nov-97 9727 E3 OMEDATA DD711504ABA 1.2µ NITRIDE 08 PDIP STRESS/JOB NO. Infant / High Voltage Life 125°C, 7.0 V. P-20931, P-20962 READPOINT
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Nov-97
P-20931,
P-20962
P-20963
P-20964
C/100%
P-20965
DD711504ABA
DS1000M-25
9727
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SSIE1420
Abstract: SSiE1210 SSIE1120 aeg diode SSiE1410 ssie1220 ssie1110 TRA1110 SSIE1205 D6050J
Text: SILICON RECTIFIERS, UNDER 1 kV Item Number Part Number Manufacturer lo Max VRRM •FSM Max A 00 (A) 00 VF IF @ IR Test (A) IR VR 25 °C @ (A) Test (V) (A) @ T2 Test CO 'Opar Max (°C) Package Style General-Purpose, lo >= 25 A (Cont'd) . . . .5 . . . .10
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As-13
Press-13
Disc-10
203AB
DO-21
SSIE1420
SSiE1210
SSIE1120
aeg diode
SSiE1410
ssie1220
ssie1110
TRA1110
SSIE1205
D6050J
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h 9740
Abstract: dallas date code ds12887 P21256 9735 h P21490 P2070 P22149 B1 9742 dallas date code DS80320
Text: RELIABILITY MONITOR STRESS: TEMP CYCLE CONDITIONS: -40 TO 85°C MONITOR DATE ASSEMBLY PRODUCT REV DATE JOB NO CODE FACILITY LOT NO. PACKAGE READ POINT QTY FAIL DS2250 na DEC 97 P21100 9743 DALLAS 096841 SIP STICK 100 11 DS2250 na DEC 97 P21100 9743 DALLAS
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DS2250
DS2290
P21100
P20430
DS80320
P20461
h 9740
dallas date code ds12887
P21256
9735 h
P21490
P2070
P22149
B1 9742
dallas date code
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marking code C1H SMD
Abstract: sab-c501-l24p
Text: SIEMENS 8-Bit CMOS Microcontroller C501 Preliminary • • • • • • • • • • • Fully compatible to standard 8051 microcontroller Versions for 12/24/40 MHz operating frequency 8 K x 8 ROM C501 -1R only 256 x 8 RAM Four 8-bit ports Three 16-bit Timers / Counters (Timer 2 with Up/Down Counter feature)
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16-bit
P-DIP-40,
P-LCC-44
P-MQFP-44
SAB-C501
SAF-C501
C501-L/C501-1R
80C32/C52
80C52
fl235b05
marking code C1H SMD
sab-c501-l24p
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OA206
Abstract: DA000 stud type diodes DD716 DD713 DA002 DA2068 DA001 DD710 DD7120
Text: Rectifier diodes — generaljpurpose types cont'd Vr P h o to g r a p h s a c tu a l size T I fsm I f (AV) @ T"stud I frm max. max. max. ( 1 0 ms) max. max. max. ( 1 0ms) @ Tj = 25°C V V A °c DD7120(1 ) 50 DD7121 (1 ) 100 DD7123(1) 200 DD7126(1 ) 400 50
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DD7120
DD7121
DD7123
DD7126
DD710
DD711
DD713
DD716
DA000
DA001
OA206
stud type diodes
DA002
DA2068
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AN404
Abstract: ST24C04 ST24W04 ST25C04 ST25W04
Text: r z j SG S-TH O M SO N ^ 7 # , SfflQ@^ lllLi @TrMRia(gi ST24C04, ST25C04 ST24W04, ST25W04 SERIAL ACCESS 4K ( 512x8 EEPROM 1 MILLION ERASE/WRrTE CYCLES with 10 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: - 3V to 5.5V for ST24x04 versions - 2.5V to 5.5V for ST25x04 versions
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ST24C04,
ST25C04
ST24W04,
ST25W04
512x8)
ST24x04
ST25x04
ST24W04
ST24/25C04
AN404
ST24C04
ST25C04
ST25W04
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007116-1
Abstract: AN404 ST24C08 ST24W08 ST25C08 ST25W08
Text: SGS-THOMSON IM §[M i[Li(gTDi IM(£S ST24C08, ST25C08 ST24W 08, ST25W 08 SERIAL ACCESS 8K (1K x 8) EEPROM 1 MILLION ERASE/WRITE CYCLES with 10 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: - 3V to 5.5V forST24x08 versions - 2.5V to 5.5V for ST25x08 versions
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ST24C08,
ST25C08
ST24W08,
ST25W08
ST24x08
ST25x08
ST24W08
ST24/25C08
ST24/25W08.
007116-1
AN404
ST24C08
ST25W08
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D4206-1
Abstract: 37 TV ocean lcd Schematic circuit diagram CMT 8000 cd crystal AM29F040 NSAM265SF NSAM265SR TP3054 GTM Corporation gl echo cancellation schematic diagram 3SB14
Text: PRELIMINARY Semiconductor September 1995 N S A M 265S R /N S A M 265S F CompactSPEECH Digital Speech Processors General Description Features The NSAM265SR and the NSAM265SF are members of National Semiconductor's CompactSPEECH, Digital Speech processors family. These processors provide Digital
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NSAM265SR/NSAM265SF
NSAM265SR
NSAM265SF
NSAM265.
NSAM265SF.
16bit
55-11J
D4206-1
37 TV ocean lcd Schematic circuit diagram
CMT 8000 cd crystal
AM29F040
TP3054
GTM Corporation gl
echo cancellation schematic diagram
3SB14
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27LC256
Abstract: 27LC64 NM27LC512
Text: NM27LC512 E H N a tio n a l mm Semiconductor NM27LC512 524,288-Bit 64k x 8 Low Current CMOS EPROM General Description Features The NM27LC512 is a 64k x 8 EPROM manufactured on a proven, manufacturable CMOS process, consuming ex tremely low current In both the active and standby modes.
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NM27LC512
288-Bit
bSD112b
27LC256
27LC64
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uPD7502
Abstract: UPD7503
Text: CHAPTER The instructions uPD7500 6.1 SET A Operand the I NSTRUCTI ON uPD7502 and Format are according uPD7503 and are a subset of the Description coded to the format« in the format refer operand field prescribed. to the assembler 11-bit 12-bit immediate immediate
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uPD7500
uPD7502
uPD7503
11-bit
12-bit
b427S25
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27lC256
Abstract: 27LC64
Text: NM27LC64 National Æm Semiconductor NM27LC64 65,536-Bit 8k x 8 Low Current CMOS EPROM General Description Features The NM27LC64 is a 8k x 8 EPROM manufactured on a proven, manufacturable CMOS process, consuming ex tremely low current in both the active and standby modes.
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NM27LC64
NM27LC64
536-Bit
NC27LC64
bSD112b
GD7115S
27lC256
27LC64
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007T021
Abstract: BTS 7166
Text: CHAPTER uPD78218A and is p r o v i d e d three 8-bit 7 TIMER/COUNTER with one timer/counter T a b l e 7-1 16-bit unit unit channel ch annels. and Functions 16-bit timer/ counter 8-bit timer/ counter 1 8-bi t timer/ counter 2 8-bit timer/ counter 3 2ch 2ch
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uPD78218A
16-bit
b42752S
007T021
BTS 7166
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Untitled
Abstract: No abstract text available
Text: Device Specifications SIEM ENS 10 Device Specifications 10.1 Absolute Maximum Ratings Ambient temperature under bias 7^ . Storage temperature (rST). Voltage on Vcc pins with respect to ground (Vss) Voltage on any pin with respect to ground (Fss) .
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00711bÃ
P-LCC-44
535b05
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TDA 0200
Abstract: No abstract text available
Text: S G S -T H O M S O N i S LiOTä ROI]© ST9040 16K ROM HCMOS MCU WITH EEPROM, RAM AND A/D CONVERTER • Register oriented 8/16 bit CORE with RUN, WFI and HALT modes ■ Minimum instruction cycle time : 500ns 12MHz internal ■ Internal Memory: ROM 16K bytes
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ST9040
500ns
12MHz
80-pin
ST9040Q
68-lead
ST9040C
56-pin
ST9040B
56fully
TDA 0200
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NMC87C257QE200
Abstract: 27C256 NMC27C256
Text: NMC87C257 National éLm Semiconductor NMC87C257 262,144-Bit 32K x 8 CMOS EPROM with On-Chip Address Latches General Description Features The NMC87C257 is a CMOS EPROM, ideally suited for ap plications where fast turnaround, pattern experimentation and low power consumption are important requirements.
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NMC87C257
144-Bit
28-pin
bSG112b
hS0112b
NMC87C257QE200
27C256
NMC27C256
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SO47
Abstract: DD711 DD713 2S54 DD710 DD716 SO-47
Text: D fll LUCAS S T A B I L I T Y ELEK LTD 81C 0 0 0 1 5 SbQ7D13 GÜQÜD1S 7 » L U C B D D S IL IC O N D IF F U S E D J U N C T IO N R E C T IF IE R S DD710 50-400V SERIES P E A K R E V E R S E V O LT A G E The D D 7 1 0 series rectifiers are case rated, 3 5 ampere silicon diffused junction, stud mounted
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Sb07D13
0-400V
DD710
SO-47
AU151
SO47
DD711
DD713
2S54
DD716
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FD6666 diode
Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5
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A4/10
A5/62
A5/105
A1000
AA100
AA110
AA111
AA112
AA113
AA114
FD6666 diode
diode BY100
1N4Q07
BA100 diode
BY164
BB139
BAY38
diode aa119
1S184 diode
1N82
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3TH43
Abstract: No abstract text available
Text: D A T A S H EET NEC MOS INTEGRATED CIRCUIT 4-BIT SINGLE-CHIP MICROCOMPUTER DESCRIPTION /xPD75108A is a 4-bit single-chip CMOS microcomputer having a data processing capability comparable to that of an 8-bit microcomputer. Operating at high speeds, the microcomputer allows data to be manipulated
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uPD75108A
jiPD75108A
//PD75108A:
IE-75000-R
IE-75001-R
IE-75000-R-EM"
EP-75108AGC-R
IEV-9200GC-64
RA75X
3TH43
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Untitled
Abstract: No abstract text available
Text: rz 7 S G S'TH O M SO N * 7 / HD gœilLI(gî[f3 lfflO(gi ST24C02, ST25C02 ST24W02, ST25W02 SERIAL ACCESS 2K (256 x 8 EEPROM 1 1 PSDIP8 (B) 0.25mm Frame S08 (M) Figure 1. Logic Diagram < o o • 1 MILLION ERASE/WRITE CYCLES with 10 YEARS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE:
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ST24C02,
ST25C02
ST24W02,
ST25W02
ST24x02
ST25x02
ST24W02
ST24/25C02,
ST24/25W02
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Untitled
Abstract: No abstract text available
Text: Æ T S G S -T H O M S O N * 7 # , IKflD g[M I[Lll(e,ll,lsi(S)liilD(g§ S T62T03 8-BIT OTP MCUs • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 3.0 to 6.0V Supply Operating Range 8 MHz Maximum Clock Frequency -40 to +85°C Operating Temperature Range
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T62T03
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Untitled
Abstract: No abstract text available
Text: rZ J * 7 # . ST24164 ST25164 S G S -T H O M S O N H D W lllL iM S ia ig i SERIAL ACCESS 16K 2K x 8 EEPROM • 1 MILLION ERASE/WRiTE CYCLES with OVER 10 YEARS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V for ST24164 version - 2.5V to 5.5V for ST25164 version
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ST24164
ST25164
ST24164
ST25164
ST24/25164
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25C02
Abstract: memory chip st24c02 ST24C02 ST24W02 ST25C02 ST25W02 st24W02 st
Text: 5 Ï. SGS-THOMSON IM lD g (Ô IlL I(g ra R !lD (g S ST24C02, ST25C02 ST24W02, ST25W02 SERIAL A CC ESS 2K (256 x 8) EEPROM 1 MILLION ERASE/WRITE CYCLES with 10 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: - 3V to 5.5V for ST24x02 versions - 2.5V to 5.5V for ST25x02 versions
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ST24C02,
ST25C02
ST24W02,
ST25W02
ST24x02
ST25x02
ST24W02
ST24/25C02
ST24/25W02.
25C02
memory chip st24c02
ST24C02
ST25C02
ST25W02
st24W02 st
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GFB7400D
Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
Text: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest
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