EUPEC DD 600 N K
Abstract: v0215
Text: European PowerSemiconductor and Electronics Company Marketing Information DD 600 N M10 screwing depth max. 18,0 31 50 44 25 25 100 112 124 6 A 144 K AK VWK February 1996 DD 600 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Periodische Spitzensperrspannung
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DD600N7
EUPEC DD 600 N K
v0215
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EUPEC DD 31 N 1200 k
Abstract: DD 31 N 800 K IEC749
Text: European PowerSemiconductor and Electronics Company Marketing Information DD 540 N M10 screwing depth max. 18,0 31 50 44 25 25 100 112 124 6 A 144 K AK VWK February 1996 DD 540 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values
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surg40
DD540N7
EUPEC DD 31 N 1200 k
DD 31 N 800 K
IEC749
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PDF
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1151a1
Abstract: No abstract text available
Text: 56 12 34 1 1234251 1 567839ABCDEBD69FBD33C3 3 1 1 3 1 3 9!1!" 3 1 .1 .80A1 F1 1 51 1 6551 51 BCD1 -F461 .1 .80A1 1 75 1 F561 561 51 51 65451 51 261 BCD81 9F1 1 95-1 561 61 91 691 :F1
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567839ABCDEBD69F
21341561789A1BCD1EF
12314567898AB3C75D3E4F4E
F38E3F
1151a1
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PDF
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Untitled
Abstract: No abstract text available
Text: !" # !" # !" # !" # $$$$$%!#&!% $$$%!#&!% $$$$$%!#&!% $$$$%!#&!% ' ' ( *+&,-.&/,&#,0&. .!*12 .!* " /-1+! .!*12 .!* " &%-1+! $-3*+!, !" # " #3-. !" # $$$$$%!#&!% !" # $$$%!#&!% !" # 4 %!#&!% $-3*+!, !" # %%!31+2" #3-. !" # $$$$$%!#&!% !" # $$$$%!#&!% !" #
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE fe,TE » • bbS 3 R 31 DD 3 Q 3 SS b 7 T « A P X Philips Semiconductors Product Specification PowerMOS transistor BUK101-50DL Logic level DESCRIPTION Monolithic temperature and
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OCR Scan
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BUK101-50DL
Iisc/ltsa25
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PDF
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R29B
Abstract: No abstract text available
Text: MP1230/31 DIE 12-Bit Microprocessor Compatible Double-Buffered Digital-to-Analog Converter CMOS Die Specifications J ja jX J \i\m Micro Power Systems ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings TA = 25°C Ordering Information V DD to G N D . 0 V, +1 7 V
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OCR Scan
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MP1230/31
12-Bit
MP1230T-DIE
MP1231S-DIE
R29B
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PDF
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EUPEC DD 31
Abstract: No abstract text available
Text: EUPEC blE D • 34G3ET? 00G1237 370 ■iUPEC DD 31 N Elektrische Eigenschaften Electrical properties H ö ch stzu lä ssig e W erte M axim um rated values P e rio d isch e repetitive peak reverse S p itze nspe rrspa nnung voltage Stoß spitzenspannun g non repetitive peak
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OCR Scan
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34G3217
00G1237
tvjS25Â
EUPEC DD 31
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PDF
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Untitled
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT L DD —A 5 0 0 2 R I PA RT N U M B E R DATE 3.00 [0 .31 5]- B REV. E.C.N. NUMBER AND REVISION COMMENTS REV. 04.27.07 E.C.N. #11 1 48 . A 06.14.12 E.C.N. #10BRD R. & REDRAWN. B -4.50±Q.75 [0.177±0.030] ELECTRO-OPTICAL CHARACTERISTICS Ta=25‘C
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OCR Scan
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10BRD
100juA
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PDF
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Untitled
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT L DD —A 5 0 0 6 R I PA RT N U M B E R DATE 3.00 [0 .31 5]- B REV. E.C.N. NUMBER AND REVISION COMMENTS REV. 04.27.07 E.C.N. #11 1 48 . A 06.14.12 E.C.N. #10BRD R. & REDRAWN. B -4.50±0.75 [0.177±0.030] ELECTRO-OPTICAL CHARACTERISTICS Ta=25‘C
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OCR Scan
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10BRD
100juA
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PDF
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Untitled
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT L DD —A 5 0 0 3 R I PA RT N U M B E R DATE 3.00 [0 .31 5]- B REV. E.C.N. NUMBER AND REVISION COMMENTS REV. 04.27.07 E.C.N. #11 1 48 . A 06.14.12 E.C.N. #10BRD R. & REDRAWN. B -4.50±0.75 [0.177±0.030] ELECTRO-OPTICAL CHARACTERISTICS Ta=25‘C
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OCR Scan
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10BRD
100juA
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PDF
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Untitled
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT L DD —A 5 0 0 4 R I PA RT N U M B E R DATE 3.00 [0 .31 5]- B REV. E.C.N. NUMBER AND REVISION COMMENTS REV. 04.27.07 E.C.N. #11 1 48 . A 06.14.12 E.C.N. #10BRD R. & REDRAWN. B -4.50±0.75 [0.177±0.030] ELECTRO-OPTICAL CHARACTERISTICS Ta=25‘C
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10BRD
100juA
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PDF
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Untitled
Abstract: No abstract text available
Text: bTE N AMER P H I L I P S / D I S C R E T E » bfc.5 3 R 31 DD 3 2 5 M2 bbfl * A P X Philips Semiconductors Product specification CATV amplifier module FEATURES g BGY887B PINNING - SOT115J2 • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 input
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OCR Scan
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BGY887B
OT115J2
BGY887B
NECC-C-005
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PDF
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101uF
Abstract: No abstract text available
Text: 4 2 3 1 NOTES 31 . 1 9 MAX 1 . a*»« A * ± . A M P « A « . t & 1 0 8 - 5 4 0 H ^ m - r * . CIRCUIT C DD 1. T H E S E PRODUCTS CONFORM AMP 5PEC 108-5401. No. A > *4 A ^ material : iw^Trrssa'tttti^ir j.-'U =7 ^ : Ä 3> ? H O U S I N G :t h e r m o p l a s t e c
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JOO-1074-93)
FJ00-0729-93)
FJ00-0399-93)
23/MM
FJ00-01
18/MAR
101uF
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PDF
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MP1230BD
Abstract: P1230 Wr1c
Text: MP1230/31/32 Microprocessor Compatible Double-Bu fared 12-Bit Digital-to-Analcg Converter Ä M icro Power System s FEATURES • Lower Data Bus Feedthrough @ CS = 1 • Stable, More Accurate Segmented DAC Approach • Ultra Stable - 0.2 ppm/°C Linearity Tempco
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MP1230/31/32
12-Bit
MP1230/31/32
MP1230BD
P1230
Wr1c
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260-pin
Abstract: No abstract text available
Text: TOSHIBA TC55V1864J/FT-10/12/15 PRELIMINARY SILICON GATE CMOS 65,536 WORD x 18 BIT CMOS STATIC RAM Description TheTC55V1864J/FT is a 1,179,648 bit high speed CMOS static random access memory organized as 65,536 words by 18 bits and operated from a single 3.3V : upply. Toshiba’s advanced CMOS technology and circuit design enable high speed operation.
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TC55V1864J/FT-10/12/15
TheTC55V1864J/FT
TC55V1864J/FT
TC55V1864J/
B-143
260-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: MP1230/31/32 M Microprocessor Compatible Double-Buffered 12-Bit Digital-to-Analog Converter Micro Power Systems ^ W i i i S i l l i l FEATURES • Lower Data Bus Feedthrough @CS = 1 • Stable, More Accurate Segmented DAC Approach • Ultra Stable - 0.2 ppm/°C Linearity Tempco
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MP1230/31/32
12-Bit
MP1230/31/32
A1-A15
DB0-DB11
12-Bit
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PDF
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Untitled
Abstract: No abstract text available
Text: ST90E40 ST90T40 S G S -T H O M S O N G l •u 16K EPROM HCMOS MCU WITH EEPROM, RAM AND A/D CONVERTER ■ Register oriented 8/16 bit CORE with RUN, WFI and HALT modes ■ Minimum instruction cycle time: 500ns 12MHz internal ■ Internal Memory: EPROM 16Kbytes
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ST90E40
ST90T40
500ns
12MHz
16Kbytes
80-pin
ST90T40Q
PQFP80
68-lead
ST90T40C
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PDF
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SOJ32P-3.0
Abstract: TC55B329 TC55B329J DD313
Text: TOSHIBA TC55B329P/J-10/12 SILICON GATE BiCMOS 32,768 WORD x 9 BIT BiCMOS STATIC RAM D e s c rip tio n The TC55B329P/J is a 294,912 bit high speed BiCMOS static random access memory organized as 32,768 words by 9 bits and operated from a single 5V supply. Toshiba's BiCMOS technology and advanced circuit design enable high speed operation.
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TC55B329P/J-10/12
TC55B329P/J
300mil
32-pln
SOJ32P-3.0
TC55B329
TC55B329J
DD313
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PDF
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15FP
Abstract: DOR31
Text: CY7C1339 128K x 32 Synchronous-Pipelined Cache RAM Features The CY7C1339 I/O pins can operate at either the 2.5V or the 3.3V level; the I/O pins are 3.3V tolerant when VDDQ=2.5V. • Supports 1 0O-MHz bus for Pentium and PowerPC operations with zero wait states
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CY7C1339
166-MHz
133-MHz
100-MHz
CY7C1339
15FP
DOR31
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PDF
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Untitled
Abstract: No abstract text available
Text: PIC16C52 M ic r o c h ip EPROM-Based 8-Bit CMOS Microcontroller ’ in Diagrams Feature Highlights Program Memory Data Memory I/O 384 25 12 PDIP, SOIC Vss RB0 ►E-i ►E2 -L * ►C4 -o -Ce RB1 RB2 ►Co RA2 High-Performance RISC CPU RA3 • Only 33 single word instructions to learn
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PIC16C52
DS30254B-page
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PDF
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p1230
Abstract: T P1230 TO P1230 MP1232HN
Text: MP1230/31/32 i M i C c r o j ^ f l D p r o c e s Compatible scroprocessor o r Double-Buffered 12-Bit Digital-to-Analog Converter FEATURES • Lower Data Bus Feedthrough @ CS = 1 • Stable, More Accurate Segmented DAC Approach • Ultra Stable 0.2 ppm/°C Linearity Tempco
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MP1230/31/32
12-Bit
MP1230A/1231
/1232A
P1230/31/32
DB0-DB11
0GQ7131
p1230
T P1230
TO P1230
MP1232HN
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PDF
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sample codes of PIC12C508
Abstract: PIC12C508 assembly language for pic 2c508a PIC12C509 source code sleep 12c508 POTENTIOMETER HCS3Q1 12C508 wake up from sleep 2C508 transistor C509
Text: P I C 12 C 5 X X H A lC E tO C H l^ 8-Pin, 8-Bit CMOS Microcontroller Devices included in this Data Sheet: - EXTRC: External low-cost RC oscillator • PIC12C508 • PIC12C508A - XT: Standard crystal/resonator • PIC12C509A - LP: Power saving, low frequency crystal
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PIC12C508
PIC12C509
PIC12C508A
PIC12C509A
PIC12C508
PIC12C508A.
PIC12C509A.
sample codes of PIC12C508
PIC12C508 assembly language for pic
2c508a
PIC12C509 source code sleep
12c508 POTENTIOMETER
HCS3Q1
12C508 wake up from sleep
2C508
transistor C509
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PDF
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DS30190
Abstract: No abstract text available
Text: M PIC16C5X ic r o c h ip EPROM/ROM-Based 8-Bit CMOS Microcontroller Series • 12-bit w ide instructions Devices Included in this Data Sheet: PIC16C52 • 8-bit w ide data path PIC16C54S • Seven or eight special function hardware registers PIC16CR54S
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PIC16C5X
12-bit
PIC16C52
PIC16C54S
PIC16CR54S
PIC16C55S
PIC16C56S
PIC16CR56S
PIC16C57S
PIC16CR57S
DS30190
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PDF
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HV93
Abstract: HV94 HV97 HV98
Text: ^ HV93/HV94 HV97/HV98 Supertex inc. Die S p e cifica tio n s HV93 Pad Function HV94 Pad Function HV97 Pad Function HV98 Pad Function 1 HVOUT1 2 3 4 HV0UT2 HVo u t3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34
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HV93/HV94
HV97/HV98
HVOUT32
HVOUT32
HVOUT31
HVOUT31
HVOUT30
HVOUT30
HVOUT29
HVOUT29
HV93
HV94
HV97
HV98
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