DD 128 D TRANSISTOR Search Results

DD 128 D TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

DD 128 D TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
STP32N05L Abstract: STP32N05LFI Text: STP32N05L STP32N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N05L STP32N05LFI • ■ ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 50 V 50 V < 0.055 Ω < 0.055 Ω 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED	Original	STP32N05L STP32N05LFI 100oC 175oC O-220 STP32N05L STP32N05LFI	PDF
STP32N06L Abstract: STP32N06LFI Text: STP32N06L STP32N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N06L STP32N06LFI • ■ ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 60 V 60 V < 0.055 Ω < 0.055 Ω 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED	Original	STP32N06L STP32N06LFI 100oC 175oC O-220 STP32N06L STP32N06LFI	PDF
S178A Abstract: VIDEO PULSE GENERATOR Text: S178A Video Pulse Generator DIP 28 The S 178 A is an MOS circuit using p-channel metal-gate-technology with enhancement and depletion transistors, featuring the following technical characteristics: The video pulse generator produces the sync, control, and erase signals required for the	OCR Scan	S178A S178A VIDEO PULSE GENERATOR	PDF
STP32N06L Abstract: STP32N06LFI Text: STP32N06L STP32N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N06L STP32N06LFI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.055 Ω < 0.055 Ω 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED	Original	STP32N06L STP32N06LFI 100oC O-220 STP32N06L STP32N06LFI	PDF
STP32N06L Abstract: STP32N06LFI Text: STP32N06L STP32N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N06L STP32N06LFI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.055 Ω < 0.055 Ω 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED	Original	STP32N06L STP32N06LFI 100oC O-220 STP32N06L STP32N06LFI	PDF
STP32N05L Abstract: STP32N05LFI Text: STP32N05L STP32N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N05L STP32N05LFI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.055 Ω < 0.055 Ω 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED	Original	STP32N05L STP32N05LFI 100oC O-220 STP32N05L STP32N05LFI	PDF
STP32N05L Abstract: STP32N05LFI Text: STP32N05L STP32N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N05L STP32N05LFI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.055 Ω < 0.055 Ω 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED	Original	STP32N05L STP32N05LFI 100oC O-220 STP32N05L STP32N05LFI	PDF
spp77n05 Abstract: Q67040-S4001-A2 BUZ 32 SMD Text: BUZ 100 S SPP77N05 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 100 S 55 V	Original	SPP77N05 O-220 Q67040-S4001-A2 30/Jan/1998 spp77n05 Q67040-S4001-A2 BUZ 32 SMD	PDF
Untitled Abstract: No abstract text available Text: *57 SGS-THOMSON iL iO M K I stp32N06L STP32N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N06L STP32N 06LFI • • . ■ ■ . ■ ■ . V dss R DS on Id 60 V 60 V < 0.055 a < 0.055 a 32 A 19 A T Y P IC A L RDS(on) = 0.045 Q A V A LA N C H E R U G G ED T E C H N O LO G Y	OCR Scan	32N06L STP32N06LFI STP32N06L STP32N 06LFI	PDF
t750 Abstract: ds 300 u810 Text: an A M P com pany RF MOSFET Power Transistor, 75W, 24V 30 - 90 MHz FH2114 Features • • • • • • N-Channel Enhancem ent Mode Device Meets CECOM Drawing A3012711 D esigned for Frequency H opping Systems 30-90 MHz I.ower Capacitances for Broadband O peration	OCR Scan	A3012711 FH2114 t750 ds 300 u810	PDF
Untitled Abstract: No abstract text available Text: SIEMENS SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 349 ^ D S on 100 V 32 A 0.06 n Maximum Ratings Parameter Continuous drain current, Tc = 27 "C Pulsed drain current, Tc = 25 "C Avalanche current, limited by 7]max	OCR Scan	O-218 C67078-S3113-A2	PDF
Untitled Abstract: No abstract text available Text: SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vos fc flDS on Package Ordering Code BUZ 349 100 V 32 A 0.06 £2 TO-218AA C67078-S3113-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values Unit A 7 b = 27 -C	OCR Scan	O-218AA C67078-S3113-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T	PDF
STP32N05L Abstract: No abstract text available Text: *57 TYPE STP32N05L STP32N 05LFI • • . ■ ■ . ■ ■ . SGS-THOMSON iL iO M K I stp32Nosl STP32N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss R DS on Id 50 V 50 V < 0.055 a < 0.055 a 32 A 19 A T Y P IC A L RDS(on) = 0.045 Q A V A LA N C H E R U G G ED T E C H N O LO G Y	OCR Scan	32Nosl STP32N05LFI STP32N05L STP32N 05LFI	PDF
BSL215C Abstract: No abstract text available Text: BSL215C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V VGS=±4.5 V 150 140 mW VGS=±2.5 V 280 250 -1.5 1.5 • Complementary P + N channel VDS · Enhancement mode RDS on ,max · Super Logic level (2.5V rated) · Avalanche rated	Original	BSL215C IEC61249-2-21 H6327: BSL215C	PDF

TE1509 Abstract: TE1055 30D8 DD 127 D TRANSISTOR te1157.1 TE1064 TE1068 TE1090 TE1105 TYPE TE Text: Type TE Vishay Sprague Aluminum Capacitors LITTL-LYTIC Electrolytics FEATURES • Proven dependable performance in the industrial and electronic equipment with either transistor or modified electron-tube circuits • All terminal connections welded, eliminating possibility of	Original	TE1309 TE1400 TE1401 TE1402 TE1403 TE1404 TE1407 TE1408 TE1409 TE1410 TE1509 TE1055 30D8 DD 127 D TRANSISTOR te1157.1 TE1064 TE1068 TE1090 TE1105 TYPE TE	PDF
BSL215C Abstract: HLG09283 L6327 Text: BSL215C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V V GS=±4.5 V 150 140 mΩ V GS=±2.5 V 280 250 -1.5 1.5 • Complementary P + N channel V DS · Enhancement mode R DS on ,max · Super Logic level (2.5V rated)	Original	BSL215C L6327: BSL215C HLG09283 L6327	PDF
BSL215C Abstract: HLG09283 L6327 Text: BSL215C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V V GS=±4.5 V 150 140 mΩ V GS=±2.5 V 280 250 -1.5 1.5 • Complementary P + N channel V DS · Enhancement mode R DS on ,max · Super Logic level (2.5V rated)	Original	BSL215C L6327: BSL215C HLG09283 L6327	PDF
MOTOROLA POWER TRANSISTOR lc 945 Abstract: zener ap 474 940 629 MOTOROLA 113 Text: MOTOROLA O rder this docum ent by M RF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N-Channel Enhancement Mode D esigned fo r w id e b a n d la rg e -s ig n a l am p lifie r and o scilla to r ap plicatio ns to 500 MHz.	OCR Scan	RF158/D MOTOROLA POWER TRANSISTOR lc 945 zener ap 474 940 629 MOTOROLA 113	PDF
Untitled Abstract: No abstract text available Text: BUZ 342 Infine on t*c h o ologie» SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated •d v /d / rated 1 VPT051SB 2 J • Ultra low on-resistance • 175"C operating temperature D G Type BUZ 342 h Vds 60 A 50 V f lDS on 0.01 n	OCR Scan	O-218AA C67078-S3135-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T	PDF
Untitled Abstract: No abstract text available Text: Communication ICs PCM codec 1C for digital cellular telephones BU8731KV The BU8731KV is a PCM codec IC developed for use with digital cellular telephones. It contains analog input / output features such as a 14-bit linear precision, \|x / A-LAW codec, mic and speaker amplifiers, and switching transistor for the	OCR Scan	BU8731KV BU8731KV 14-bit BU8731	PDF
Untitled Abstract: No abstract text available Text: Product specification BSS215P OptiMOS P2 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Super Logic Level (2.5V rated) -20 V V GS=-4.5 V 150 mΩ V GS=-2.5 V 280 ID -1.5 A • Avalanche rated PG-SOT23	Original	BSS215P PG-SOT23 IEC61249-2-21 H6327:	PDF
BUZ80AFI Abstract: BUZ80AF BUZ80A k2800 Y125 dg45b Text: 7 ^ 2 ^ 5 3 7 O O M SbBT G 7b • S 6TH BUZ80A BUZ80AFI SGS-THOMSON :^OT q MS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ80A BUZ80AFI ■ . . ■ . ■ . V dss R dS(OII) Id 800 V 800 V < 3 Q < 3 Ü 3.8 A 2.4 A TYPICAL Ros(on) = 2.5 Q AVALANCHE RUGGED TECHNOLOGY	OCR Scan	BUZ80A BUZ80AFI BUZ80A BUZ80AFI 800Vds 7T5ci237 045b45 BUZ80A/BUZ80AFI BUZ80AF k2800 Y125 dg45b	PDF
Untitled Abstract: No abstract text available Text: May 1996 F A IR C H IL D SEM IC ONDUCTO R tm NDP7060 / NDB7060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell	OCR Scan	NDP7060 NDB7060	PDF
Untitled Abstract: No abstract text available Text: March 1996 N NDP7050 / NDB7050 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is	OCR Scan	NDP7050 NDB7050	PDF

DD 128 D TRANSISTOR Search Results

DD 128 D TRANSISTOR Result Highlights (5)

DD 128 D TRANSISTOR Datasheets Context Search

STP32N05L

STP32N06L

S178A

STP32N06L

STP32N06L

STP32N05L

STP32N05L

spp77n05

Untitled

t750

Untitled

Untitled

STP32N05L

BSL215C

TE1509

BSL215C

BSL215C

MOTOROLA POWER TRANSISTOR lc 945

Untitled

Untitled

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BUZ80AFI

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