GP 841 Diode
Abstract: FH2114 A3012
Text: FH2114 RF Power MOSFET Transistor 75W, 30-90MHz, 24V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • • N-Channel enhancement mode device Meets CECOM drawing A3012711 Designed for frequency hopping systems 30-90 MHz
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FH2114
30-90MHz,
A3012711
GP 841 Diode
FH2114
A3012
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12J60
Abstract: a3012711 J006 FH2114 300v 10 amp n-channel mosfet R750 S M R750 transistor A4I
Text: m an A M P company RF MOSFET Power Transistor, 75W, 24V 30 - 90 MHz FH2114 V2.00 Features ♦ N-Channel Enhancement Mode Device Meets CECOM Drawing A3012711 Designed for Frequency Hopping Systems 30*90 MHz Lower Capacitances for Broadband Operation Lower Noise Figure Than Bipolar Devices
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OCR Scan
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PDF
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FH2114
A3012711
VOS-30
12J60
a3012711
J006
FH2114
300v 10 amp n-channel mosfet
R750
S M R750
transistor A4I
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t750
Abstract: ds 300 u810
Text: an A M P com pany RF MOSFET Power Transistor, 75W, 24V 30 - 90 MHz FH2114 Features • • • • • • N-Channel Enhancem ent Mode Device Meets CECOM Drawing A3012711 D esigned for Frequency H opping Systems 30-90 MHz I.ower Capacitances for Broadband O peration
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OCR Scan
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PDF
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A3012711
FH2114
t750
ds 300
u810
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