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Abstract: No abstract text available
Text: Philips Semiconductors _ - NPN 1 GHz video transistor PHILIPS INTERNATIONAL DESCRIPTION _ Product specification - 7^ 3 3 - 0 5 BFQ268; BFQ268/1 SbE D m 71106Bb DG45bS7 344 H P H I N PINNING NPN silicon epitaxial transistor with emitter-ballasting resistors and a
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BFQ268;
BFQ268/1
71106Bb
DG45bS7
BFQ268
T-33-05
------BFQ268;
BFQ268/I
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G406A
Abstract: G407B G406 DG407B 406AD G406B
Text: ANALO G D E V IC E S LC2M0S 8-/16-Channel High Performance Analog Multiplexers ADG406/ADG407/ADG426 FEATURES 44 V Supply Maximum Ratings Vss to VDDAnalog Signal Range Low On Resistance 80 Q. max Low Power Fast Switching t0N < 160 ns t0FF < 150 ns Break Before Make Switching Action
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DG506A/ADG506A.
DG507A/ADG507A,
DG526/ADG526A
ADG406/ADG407
DG406/DG407
8-/16-Channel
ADG406/ADG407/ADG426
ADG406
ADG407
G406A
G407B
G406
DG407B
406AD
G406B
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BUZ80AFI
Abstract: BUZ80AF BUZ80A k2800 Y125 dg45b
Text: 7 ^ 2 ^ 5 3 7 O O M SbBT G 7b • S 6TH BUZ80A BUZ80AFI SGS-THOMSON :^OT q MS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ80A BUZ80AFI ■ . . ■ . ■ . V dss R dS(OII) Id 800 V 800 V < 3 Q < 3 Ü 3.8 A 2.4 A TYPICAL Ros(on) = 2.5 Q AVALANCHE RUGGED TECHNOLOGY
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BUZ80A
BUZ80AFI
BUZ80A
BUZ80AFI
800Vds
7T5ci237
045b45
BUZ80A/BUZ80AFI
BUZ80AF
k2800
Y125
dg45b
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