Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DD 127 TRANSISTOR Search Results

    DD 127 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    DD 127 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTE 10114* 12 Watts, 1.5 GHz LDMOS Field Effect Transistor Description The 10114 is a com mon source n-channel enhancem ent-m ode lateral MOSFET intended for large signal am plifier applications to 1.5 GHz. It is ra ted a t 12 w a tts m inim um o u tp u t pow er. N itrid e surface


    OCR Scan     		PDF

    TE1509

    Abstract: TE1055 30D8 DD 127 D TRANSISTOR te1157.1 TE1064 TE1068 TE1090 TE1105 TYPE TE
    Text: Type TE Vishay Sprague Aluminum Capacitors LITTL-LYTIC Electrolytics FEATURES • Proven dependable performance in the industrial and electronic equipment with either transistor or modified electron-tube circuits • All terminal connections welded, eliminating possibility of


    Original     		TE1309 TE1400 TE1401 TE1402 TE1403 TE1404 TE1407 TE1408 TE1409 TE1410 TE1509 TE1055 30D8 DD 127 D TRANSISTOR te1157.1 TE1064 TE1068 TE1090 TE1105 TYPE TE PDF

    dd 127

    Abstract: GS 069 CHM13N07PAPT motor mosfet 55a6m
    Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 70 Volts CHM13N07PAPT CURRENT 11 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. TO-252A FEATURE * Small package. TO-252A


    Original     		CHM13N07PAPT O-252A O-252A) dd 127 GS 069 CHM13N07PAPT motor mosfet 55a6m PDF

    CHM13N07PAGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHM13N07PAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 70 Volts CURRENT 11 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE


    Original     		CHM13N07PAGP O-252) CHM13N07PAGP PDF

    DD 127 D TRANSISTOR

    Abstract: STP4NA100
    Text: STP4NA100 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP4NA100 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 1000 V <3. 5 Ω 4.2 A TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		STP4NA100 100oC O-220 DD 127 D TRANSISTOR STP4NA100 PDF

    DD 127 D TRANSISTOR

    Abstract: STP4NA100
    Text: STP4NA100 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP4NA100 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 1000 V <3. 5 Ω 4.2 A TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100 oC


    Original     		STP4NA100 O-220 DD 127 D TRANSISTOR STP4NA100 PDF

    2SC3113

    Abstract: No abstract text available
    Text: 2SC3113 TO SH IBA 2 S C 3 1 13 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE Unit in mm FOR AUDIO AMPLIFIER AND SWITCHING APPLICATIONS • • • • High DC Current Gain High Breakdown Voltage High Collector Current Small Package 4 .2 M A X . hpE —600~3600


    OCR Scan     		2SC3113 150mA 2SC3113 PDF

    DD 127 D TRANSISTOR

    Abstract: STP4NA100
    Text: STP4NA100 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP4NA100 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 1000 V <3. 5 Ω 4.2 A TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100 oC


    Original     		STP4NA100 O-220 DD 127 D TRANSISTOR STP4NA100 PDF

    MOTOROLA POWER TRANSISTOR lc 945

    Abstract: zener ap 474 940 629 MOTOROLA 113
    Text: MOTOROLA O rder this docum ent by M RF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N-Channel Enhancement Mode D esigned fo r w id e b a n d la rg e -s ig n a l am p lifie r and o scilla to r ap plicatio ns to 500 MHz.


    OCR Scan     		RF158/D MOTOROLA POWER TRANSISTOR lc 945 zener ap 474 940 629 MOTOROLA 113 PDF

    JMC5701

    Abstract: GPS-101-2
    Text: GOLDMOS PTF 10053 Field Effect Transistor 12 Watts, 2.0 GHz Description The PTF 10053 is a 12–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full gold


    Original     		PCS6106 1-877-GOLDMOS 1522-PTF JMC5701 GPS-101-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: GOLDMOS PTF 10053 Field Effect Transistor 12 Watts, 2.0 GHz Description The PTF 10053 is a 12–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full gold


    Original     		PCS6106-ND 220QBK-ND 1-877-GOLDMOS 1522-PTF PDF

    DD 127 D TRANSISTOR

    Abstract: No abstract text available
    Text: STU/D9916L SamHop Microelectronics Corp. Preliminary Mar.25 2004 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON Super high dense cell design for low RDS(ON). ( m Ω) Max Rugged and reliable. 30@ VGS = 10V 30V TO-252 and TO-251 Package.


    Original     		STU/D9916L O-252 O-251 O-252AA U/D9916L Tube/TO-252 O-252 DD 127 D TRANSISTOR PDF

    H5NA100FI

    Abstract: h5na100 TRANSISTORS 132 GD W5NA100 ST C 236 DIODE H5NA100F STH5NA100FI STW5NA100 O-247 h5NA
    Text: STW5NA100 STH5NA100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS R DS on ID ST W5NA100 ST H5NA100FI 1000 V 1000 V < 3.5 Ω < 3.5 Ω 4.6 A 2.9 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING


    Original     		STW5NA100 STH5NA100FI W5NA100 H5NA100FI 100oC O-247 ISOWATT218 H5NA100FI h5na100 TRANSISTORS 132 GD W5NA100 ST C 236 DIODE H5NA100F STH5NA100FI STW5NA100 O-247 h5NA PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BSP 324 SIPM OS Small-Signal Transistor • N channel • Enhancement mode • ^GS th = 1-5 .2.5 v Type VDS BSP 324 400 V Type BSP 324 Ordering Code Q67000-S215 0.1 7 A ^DS(on) Package Marking 25 a SOT-223 BSP 324 Tape and Reel Information E6327


    OCR Scan     		Q67000-S215 OT-223 E6327 053SbOS fl235bOS 0GflbG22 D0flb023 PDF

    STH5NA100FI

    Abstract: STW5NA100 TRANSISTORS 132 GD
    Text: STW5NA100 STH5NA100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS R DS on ID STW5NA100 STH5NA100FI 1000 V 1000 V < 3.5 Ω < 3.5 Ω 4.6 A 2.9 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING


    Original     		STW5NA100 STH5NA100FI O-247 ISOWATT218 STH5NA100FI STW5NA100 TRANSISTORS 132 GD PDF

    MARKING code WMM RF transistor

    Abstract: No abstract text available
    Text: SIEMENS ICs for Consumer Electronics DDC-PLUS-Deflection Controller SDA 9361 D a ta s h e e t 1998-02-01 Edition 1998-02-01 This edition was realized using the softw are system FrameMaker Published by Siem ens AG, Bereich Halbleiter, M arketing-Kom m unikation,


    OCR Scan     		P-MQFP-44-2 GPM05622 MARKING code WMM RF transistor PDF

    cd40118

    Abstract: CD4081 C04011B 74LS CD4071B CD4071BM CD4081B CD4081BM
    Text: , February 1988 CD4071BM/CD4071BC Quad 2-Input OR Buffered B Series Gate CD4081BM /CD4081BC Quad 2-Input AND Buffered B Series Gate General Description Features These quad gates are monolithic complementary MOS CMOS integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source


    OCR Scan     		CD4071BM/CD4071BC CD4081BM/CD4081 V-10V-15V cd40118 CD4081 C04011B 74LS CD4071B CD4071BM CD4081B CD4081BM PDF

    SMD Transistor NI

    Abstract: smd marking AB 6 PIN siemens off saw filter HSYNC, VSYNC, DE, input, output digital tv
    Text: SIEMENS ICs for Consumer Electronics DDC-PLUS-Deflection Controller SDA 9361 D atasheet 1998-02-01 Edition 1998-02-01 This edition was realized using the software system FrameMaker Published by Siemens AG, Bereich Halbieiter, Marketlng-Kommunikation, BalanstraBe 73,


    OCR Scan     		P-MGFP-44-2 441Index GPM05622 SMD Transistor NI smd marking AB 6 PIN siemens off saw filter HSYNC, VSYNC, DE, input, output digital tv PDF

    BUZ80AFI

    Abstract: BUZ80AF BUZ80A k2800 Y125 dg45b
    Text: 7 ^ 2 ^ 5 3 7 O O M SbBT G 7b • S 6TH BUZ80A BUZ80AFI SGS-THOMSON :^OT q MS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ80A BUZ80AFI ■ . . ■ . ■ . V dss R dS(OII) Id 800 V 800 V < 3 Q < 3 Ü 3.8 A 2.4 A TYPICAL Ros(on) = 2.5 Q AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		BUZ80A BUZ80AFI BUZ80A BUZ80AFI 800Vds 7T5ci237 045b45 BUZ80A/BUZ80AFI BUZ80AF k2800 Y125 dg45b PDF

    STH5NA100FI

    Abstract: STW5NA100
    Text: STW5NA100 STH5NA100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS R DS on ID STW5NA100 STH5NA100FI 1000 V 1000 V < 3.5 Ω < 3.5 Ω 4.6 A 2.9 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING


    Original     		STW5NA100 STH5NA100FI O-247 ISOWATT218 STH5NA100FI STW5NA100 PDF

    microsoft optical mouse microcontroller

    Abstract: logitech optical mouse microcontroller 4 pin phototransistor Logitech logitech G5 mouse controller 4 pin phototransistor for Mouse Logitech Optical mouse optical principle mechanical mouse microcontroller mechanical mouse logitech optical mouse RS232 MECHANICAL MOUSE
    Text: National Semiconductor Application Note 681 Alvin Chan June 1990 ABSTRACT The mouse is a very convenient and popular device used in data entry in desktop computers and workstations For desktop publishing CAD paint or drawing programs using the mouse is inevitable This application note will describe


    Original     		COP822C 20-3A microsoft optical mouse microcontroller logitech optical mouse microcontroller 4 pin phototransistor Logitech logitech G5 mouse controller 4 pin phototransistor for Mouse Logitech Optical mouse optical principle mechanical mouse microcontroller mechanical mouse logitech optical mouse RS232 MECHANICAL MOUSE PDF

    2SK790

    Abstract: HSO16 2SK79 1SV35
    Text: TOSHIBA {DISCRETE/OPTO} 9097250 T O S H IB A TT dF § T D T 725G O D l bTSS T J T O S H IB A D I S C R E T E /OPTO J T0SHIBA FIELD effect TRANSISTOR 2 S IC 7 9 0 99D 1 6 7 5 5 SEMICONDUCTOR SILICON N CHANNEL MOS TYPE C7T-MOSI T-3'?-13 TECHNICAL DATA •INDUSTRIAL APPLICATIONS


    OCR Scan     		TDT725G 300uA EGA-2SK790-A EGA-2SK790-5 2SK790 HSO16 2SK79 1SV35 PDF

    SIEMENS 3 TB 40 17 - 0A

    Abstract: SIEMENS 3 TB 40 17 - 0B SIEMENS 3 TB 40 12 - 0A
    Text: ICs for Consumer Electronics DDC-PLUS-Deflection Controller SDA 9362 D a ta s h e e t 1998-02-01 Edition 1998-02-01 This edition was realized using the software system FrameMaker Published by Siemens AG, Bereich Halbleiter, Marketing-Kommunikation, Balanstraße 73,


    OCR Scan     		P-MQFP-44-2 GPM05622 SIEMENS 3 TB 40 17 - 0A SIEMENS 3 TB 40 17 - 0B SIEMENS 3 TB 40 12 - 0A PDF

    SMD transistor MARKING code RIP 31

    Abstract: No abstract text available
    Text: SIEMENS ICs for Consumer Electronics DDC-PLUS-Deflection Controller SDA 9362 D a ta s h e e t 1998-02-01 Edition 1998-02-01 This edition was realized using the softw are system FrameMaker Published by Siem ens AG, Bereich H albleiter, M arketing-Kom m unikation,


    OCR Scan     		UET10276 QFP-44-2 44Index GPM05622 SMD transistor MARKING code RIP 31 PDF