TE1509
Abstract: TE1055 30D8 DD 127 D TRANSISTOR te1157.1 TE1064 TE1068 TE1090 TE1105 TYPE TE
Text: Type TE Vishay Sprague Aluminum Capacitors LITTL-LYTIC Electrolytics FEATURES • Proven dependable performance in the industrial and electronic equipment with either transistor or modified electron-tube circuits • All terminal connections welded, eliminating possibility of
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TE1309
TE1400
TE1401
TE1402
TE1403
TE1404
TE1407
TE1408
TE1409
TE1410
TE1509
TE1055
30D8
DD 127 D TRANSISTOR
te1157.1
TE1064
TE1068
TE1090
TE1105
TYPE TE
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dd 127
Abstract: GS 069 CHM13N07PAPT motor mosfet 55a6m
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 70 Volts CHM13N07PAPT CURRENT 11 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. TO-252A FEATURE * Small package. TO-252A
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CHM13N07PAPT
O-252A
O-252A)
dd 127
GS 069
CHM13N07PAPT
motor mosfet
55a6m
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CHM13N07PAGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHM13N07PAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 70 Volts CURRENT 11 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE
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CHM13N07PAGP
O-252)
CHM13N07PAGP
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DD 127 D TRANSISTOR
Abstract: STP4NA100
Text: STP4NA100 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP4NA100 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 1000 V <3. 5 Ω 4.2 A TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100 oC
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STP4NA100
O-220
DD 127 D TRANSISTOR
STP4NA100
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DD 127 D TRANSISTOR
Abstract: STP4NA100
Text: STP4NA100 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP4NA100 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 1000 V <3. 5 Ω 4.2 A TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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STP4NA100
100oC
O-220
DD 127 D TRANSISTOR
STP4NA100
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DD 127 D TRANSISTOR
Abstract: STP4NA100
Text: STP4NA100 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP4NA100 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 1000 V <3. 5 Ω 4.2 A TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100 oC
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STP4NA100
O-220
DD 127 D TRANSISTOR
STP4NA100
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H5NA100FI
Abstract: h5na100 TRANSISTORS 132 GD W5NA100 ST C 236 DIODE H5NA100F STH5NA100FI STW5NA100 O-247 h5NA
Text: STW5NA100 STH5NA100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS R DS on ID ST W5NA100 ST H5NA100FI 1000 V 1000 V < 3.5 Ω < 3.5 Ω 4.6 A 2.9 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING
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STW5NA100
STH5NA100FI
W5NA100
H5NA100FI
100oC
O-247
ISOWATT218
H5NA100FI
h5na100
TRANSISTORS 132 GD
W5NA100
ST C 236 DIODE
H5NA100F
STH5NA100FI
STW5NA100
O-247
h5NA
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STH5NA100FI
Abstract: STW5NA100 TRANSISTORS 132 GD
Text: STW5NA100 STH5NA100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS R DS on ID STW5NA100 STH5NA100FI 1000 V 1000 V < 3.5 Ω < 3.5 Ω 4.6 A 2.9 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING
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STW5NA100
STH5NA100FI
O-247
ISOWATT218
STH5NA100FI
STW5NA100
TRANSISTORS 132 GD
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DD 127 D TRANSISTOR
Abstract: No abstract text available
Text: STU/D9916L SamHop Microelectronics Corp. Preliminary Mar.25 2004 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON Super high dense cell design for low RDS(ON). ( m Ω) Max Rugged and reliable. 30@ VGS = 10V 30V TO-252 and TO-251 Package.
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STU/D9916L
O-252
O-251
O-252AA
U/D9916L
Tube/TO-252
O-252
DD 127 D TRANSISTOR
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STH5NA100FI
Abstract: STW5NA100
Text: STW5NA100 STH5NA100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS R DS on ID STW5NA100 STH5NA100FI 1000 V 1000 V < 3.5 Ω < 3.5 Ω 4.6 A 2.9 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING
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STW5NA100
STH5NA100FI
O-247
ISOWATT218
STH5NA100FI
STW5NA100
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600N25N
Abstract: DD 127 D TRANSISTOR ds 290 14H IEC61249-2-21 JESD22 PG-TO220-3 IPI600N25N3 G
Text: IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 250 V R DS(on),max 60 mΩ ID 25 A • Very low on-resistance R DS(on) • 175 °C operating temperature
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IPB600N25N3
IPP600N25N3
IPI600N25N3
IEC61249-2-21
PG-TO263-3
PG-TO220-3
PG-TO262-3
600N25N
DD 127 D TRANSISTOR
ds 290 14H
IEC61249-2-21
JESD22
PG-TO220-3
IPI600N25N3 G
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Untitled
Abstract: No abstract text available
Text: IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) • Very low on-resistance R DS(on) VDS 250 V RDS(on),max 60 mW ID 25 A • 175 °C operating temperature
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IPB600N25N3
IPP600N25N3
IPI600N25N3
IEC61249-2-21
PG-TO263-3
PG-TO220-3
PG-TO262-3
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600N25N
Abstract: No abstract text available
Text: IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 250 V RDS(on),max 60 mW ID 25 A • Very low on-resistance R DS(on) • 175 °C operating temperature
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IPB600N25N3
IPP600N25N3
IPI600N25N3
IEC61249-2-21
PG-TO263-3
600N25N
PG-TO220-3
600N25N
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Untitled
Abstract: No abstract text available
Text: ERICSSON ^ PTE 10114* 12 Watts, 1.5 GHz LDMOS Field Effect Transistor Description The 10114 is a com mon source n-channel enhancem ent-m ode lateral MOSFET intended for large signal am plifier applications to 1.5 GHz. It is ra ted a t 12 w a tts m inim um o u tp u t pow er. N itrid e surface
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MOTOROLA POWER TRANSISTOR lc 945
Abstract: zener ap 474 940 629 MOTOROLA 113
Text: MOTOROLA O rder this docum ent by M RF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N-Channel Enhancement Mode D esigned fo r w id e b a n d la rg e -s ig n a l am p lifie r and o scilla to r ap plicatio ns to 500 MHz.
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RF158/D
MOTOROLA POWER TRANSISTOR lc 945
zener ap 474
940 629 MOTOROLA 113
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MARKING code WMM RF transistor
Abstract: No abstract text available
Text: SIEMENS ICs for Consumer Electronics DDC-PLUS-Deflection Controller SDA 9361 D a ta s h e e t 1998-02-01 Edition 1998-02-01 This edition was realized using the softw are system FrameMaker Published by Siem ens AG, Bereich Halbleiter, M arketing-Kom m unikation,
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P-MQFP-44-2
GPM05622
MARKING code WMM RF transistor
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BUZ80AFI
Abstract: BUZ80AF BUZ80A k2800 Y125 dg45b
Text: 7 ^ 2 ^ 5 3 7 O O M SbBT G 7b • S 6TH BUZ80A BUZ80AFI SGS-THOMSON :^OT q MS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ80A BUZ80AFI ■ . . ■ . ■ . V dss R dS(OII) Id 800 V 800 V < 3 Q < 3 Ü 3.8 A 2.4 A TYPICAL Ros(on) = 2.5 Q AVALANCHE RUGGED TECHNOLOGY
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BUZ80A
BUZ80AFI
BUZ80A
BUZ80AFI
800Vds
7T5ci237
045b45
BUZ80A/BUZ80AFI
BUZ80AF
k2800
Y125
dg45b
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cd40118
Abstract: CD4081 C04011B 74LS CD4071B CD4071BM CD4081B CD4081BM
Text: , February 1988 CD4071BM/CD4071BC Quad 2-Input OR Buffered B Series Gate CD4081BM /CD4081BC Quad 2-Input AND Buffered B Series Gate General Description Features These quad gates are monolithic complementary MOS CMOS integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source
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CD4071BM/CD4071BC
CD4081BM/CD4081
V-10V-15V
cd40118
CD4081
C04011B
74LS
CD4071B
CD4071BM
CD4081B
CD4081BM
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SMD Transistor NI
Abstract: smd marking AB 6 PIN siemens off saw filter HSYNC, VSYNC, DE, input, output digital tv
Text: SIEMENS ICs for Consumer Electronics DDC-PLUS-Deflection Controller SDA 9361 D atasheet 1998-02-01 Edition 1998-02-01 This edition was realized using the software system FrameMaker Published by Siemens AG, Bereich Halbieiter, Marketlng-Kommunikation, BalanstraBe 73,
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P-MGFP-44-2
441Index
GPM05622
SMD Transistor NI
smd marking AB 6 PIN
siemens off saw filter
HSYNC, VSYNC, DE, input, output digital tv
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2SK790
Abstract: HSO16 2SK79 1SV35
Text: TOSHIBA {DISCRETE/OPTO} 9097250 T O S H IB A TT dF § T D T 725G O D l bTSS T J T O S H IB A D I S C R E T E /OPTO J T0SHIBA FIELD effect TRANSISTOR 2 S IC 7 9 0 99D 1 6 7 5 5 SEMICONDUCTOR SILICON N CHANNEL MOS TYPE C7T-MOSI T-3'?-13 TECHNICAL DATA •INDUSTRIAL APPLICATIONS
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TDT725G
300uA
EGA-2SK790-A
EGA-2SK790-5
2SK790
HSO16
2SK79
1SV35
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SIEMENS 3 TB 40 17 - 0A
Abstract: SIEMENS 3 TB 40 17 - 0B SIEMENS 3 TB 40 12 - 0A
Text: ICs for Consumer Electronics DDC-PLUS-Deflection Controller SDA 9362 D a ta s h e e t 1998-02-01 Edition 1998-02-01 This edition was realized using the software system FrameMaker Published by Siemens AG, Bereich Halbleiter, Marketing-Kommunikation, Balanstraße 73,
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P-MQFP-44-2
GPM05622
SIEMENS 3 TB 40 17 - 0A
SIEMENS 3 TB 40 17 - 0B
SIEMENS 3 TB 40 12 - 0A
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SMD transistor MARKING code RIP 31
Abstract: No abstract text available
Text: SIEMENS ICs for Consumer Electronics DDC-PLUS-Deflection Controller SDA 9362 D a ta s h e e t 1998-02-01 Edition 1998-02-01 This edition was realized using the softw are system FrameMaker Published by Siem ens AG, Bereich H albleiter, M arketing-Kom m unikation,
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UET10276
QFP-44-2
44Index
GPM05622
SMD transistor MARKING code RIP 31
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Untitled
Abstract: No abstract text available
Text: Zjï SGS-THOMSON ¡[LieraMe STW5NA100 STH5NA100FI N - CHANNEL ENHANCEMENT MODE _POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V dss R d S oii Id S T W 5 N A 1 00 S T H 5N A 1 00 F I 1 0 00 V 1 0 00 V < 3 .5 Q. < 3 .5 CÌ 4 .6 A 2 .9 A TYPICAL R D S (on) = 2.9 Î2
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STW5NA100
STH5NA100FI
P025C
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Untitled
Abstract: No abstract text available
Text: S G S -T H O M S O N RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ S T P 4 N A 100 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYP E V dss S T P 4 N A 1 00 1000 V R dS(oii) <3. 5 Q. Id 4.2 A . • TYPICAL RDS(on) =2.9 ± 30V GATE TO SOURCE VOLTAGE RATING
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