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    DATE CODE SAMSUNG CAPACITORS Search Results

    DATE CODE SAMSUNG CAPACITORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NFM15PC755R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC435R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC915R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    DE6B3KJ151KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ471KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    DATE CODE SAMSUNG CAPACITORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DIODE 20B2

    Abstract: TP4213 TP2658 SHEET15 30B4 diode 37 TV samsung lcd Schematic circuit diagram TP5000 alviso-GM 30B4 BA92-03859A
    Text: SAMSUNG X06 GUO LEI ZHOU JUN DRAW Model Name : PBA Name : PCB Code : Dev. Step : Revision : T.R. Date : CPU : Chip Set : Remarks : CHEN TAO CHECK KEVIN LEE APPROVAL X06 BA92-03859A BA41-00529A MP 1.0 2005-6-25 Dothan Intel Alviso + ICH6-M Internal Gfx. Aquila-So


    Original     		PDF Sheet10. Sheet11. Sheet12. Sheet13. Sheet14. Sheet15. Sheet16. Sheet17. Sheet18. Sheet19. DIODE 20B2 TP4213 TP2658 SHEET15 30B4 diode 37 TV samsung lcd Schematic circuit diagram TP5000 alviso-GM 30B4 BA92-03859A

    MEC1308-NU

    Abstract: APW7141QAITRG AMD CPU S1g3 rx881 RX881M DIODE SMD AE22 TPS51125 N25 3KV SEC APW7141 mec1308
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Page. 1 Page. 2 Page. 3 Page. 4


    Original     		PDF VDD18 BA41-xxxxxxA MEC1308-NU APW7141QAITRG AMD CPU S1g3 rx881 RX881M DIODE SMD AE22 TPS51125 N25 3KV SEC APW7141 mec1308

    ASM1442

    Abstract: bd82hm55 SMSC mec1308 mec1308 Intel hm55 JLCD500 HM55 CRB smsc mec1308-nu LTST-C193TBKT-AC N11X-GE1
    Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 8. Block Diagram and Schematic D C B A 4 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL


    Original     		PDF BREMEN-15C/17C BREMEN-15C/17C BA41-xxxxxA 100nF C1114 ASM1442 bd82hm55 SMSC mec1308 mec1308 Intel hm55 JLCD500 HM55 CRB smsc mec1308-nu LTST-C193TBKT-AC N11X-GE1

    APW7141

    Abstract: tps51620 bremen-ul samsung r730 rt8205 mec1308 Alcor card reader controller AU6336 smd diode S6 67A BA41-XXXXXA cantiga gl40 samsung r530
    Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 8. Block Diagram and Schematic D C B A 4 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL


    Original     		PDF 100nF APW7141 tps51620 bremen-ul samsung r730 rt8205 mec1308 Alcor card reader controller AU6336 smd diode S6 67A BA41-XXXXXA cantiga gl40 samsung r530

    TP4213

    Abstract: TP2658 30B4 diode DIODE 20B2 diode 30b4 tp4203 TP2923 aLC665 37 TV samsung dvd Schematic circuit diagram 26c4
    Text: SAMSUNG X06 Dothan Intel Alviso + ICH6-M Internal Gfx. Sheet1. Sheet2. Sheet3. Sheet4. Sheet5. Sheet6. Sheet7. Sheet8. Sheet9. Sheet10. Sheet11. Sheet12. Sheet13. Sheet14. Sheet15. Sheet16. Sheet17. Sheet18. Sheet19. Sheet20. Sheet21. Sheet22. Sheet23. Sheet24.


    Original     		PDF Sheet10. Sheet11. Sheet12. Sheet13. Sheet14. Sheet15. Sheet16. Sheet17. Sheet18. Sheet19. TP4213 TP2658 30B4 diode DIODE 20B2 diode 30b4 tp4203 TP2923 aLC665 37 TV samsung dvd Schematic circuit diagram 26c4

    samsung capacitance Manufacturing location

    Abstract: No abstract text available
    Text: PC100/PC133 µSODIMM M463S3254CK1 32Mx64 SDRAM µSODIMM Revision 0.2 Sept. 2001 Rev. 0.2 Sept. 2001 M463S3254CK1 PC100/PC133 µSODIMM Revision History Revision 0.0 July 2001 • First published. Revision 0.1 (Aug. 2001) • SPD correction Revision 0.2 (Sept. 2001)


    Original     		PDF PC100/PC133 M463S3254CK1 32Mx64 100MHz M463Sm samsung capacitance Manufacturing location

    PC2-5300F-555-11-B

    Abstract: SG5SD82N2G1CDDJSE 2rx8 pc2-4200u-444-12
    Text: SG5SD82N2G1CDDJUU February 5, 2009 Ordering Information Part Numbers Description AMB Vendor Device Vendor SG5SD82N2G1CDDJHC 256Mx72 2GB , DDR2, 240-pin Fully Buffered DIMM, ECC, 128Mx8 Based, PC2-5300, DDR2-667-555, 30.35mm, Green Module (RoHS Compliant).


    Original     		PDF SG5SD82N2G1CDDJUU SG5SD82N2G1CDDJHC 256Mx72 240-pin 128Mx8 PC2-5300, DDR2-667-555, PC2-5300F-555-11-B_ AMB0680L4RJ8 HY5PS1G831CFP-Y5 PC2-5300F-555-11-B SG5SD82N2G1CDDJSE 2rx8 pc2-4200u-444-12

    M463S1654CT1-L7A

    Abstract: K4S561632C M463S1654CT1 COMMAND K4S561632C-TC k4s561632 date code samsung capacitors samsung capacitance year code
    Text: PC100/PC133 µSODIMM M463S1654CT1 16Mx64 SDRAM µSODIMM Revision 0.1 Sept. 2001 Rev. 0.1 Sept. 2001 M463S1654CT1 PC100/PC133 µSODIMM Revision History Revision 0.0 Aug. 2001, Preliminary • First published. Revision 0.1 (Sept. 2001) • Reduced IDD1/4 in DC Characteristics.


    Original     		PDF PC100/PC133 M463S1654CT1 16Mx64 100MHz M463S1654CT1 M463S1654CT1-L7A K4S561632C COMMAND K4S561632C-TC k4s561632 date code samsung capacitors samsung capacitance year code

    KMM466S104CT-F0

    Abstract: KM416S1020CT-F10
    Text: KMM466S104CT 144pin SDRAM SODIMM Revision History Revision .2 Mar. 1998 •Some Parameters values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1uA.


    Original     		PDF KMM466S104CT 144pin 200mV. 2K/32ms 4K/64ms. KMM466S104CT 1Mx64 1Mx16, KMM466S104CT-F0 KM416S1020CT-F10

    CDC2509

    Abstract: samsung capacitance year code
    Text: M377S0823ET3 PC100 Registered DIMM Revision History Revision 0.1 January 15, 2001 - Drive IC is changed from ALVC162835 to ALVCF162835 and PLL is also changed from CDC2509 to CDCF2509. Revision 0.2 (Sep., 2001) • Changed the Notes in Operating AC Parameter.


    Original     		PDF M377S0823ET3 PC100 ALVC162835 ALVCF162835 CDC2509 CDCF2509. 100MHz samsung capacitance year code

    CDC2509

    Abstract: samsung capacitance Manufacturing location ALVC162835 CDCF2509 M377S1620ET3 samsung capacitance year code
    Text: M377S1620ET3 PC100 Registered DIMM Revision History Revision 0.1 January 15, 2001 - Drive IC is changed from ALVC162835 to ALVCF162835 and PLL is also changed from CDC2509 to CDCF2509. Revision 0.2 (Sep., 2001) • Changed the Notes in Operating AC Parameter.


    Original     		PDF M377S1620ET3 PC100 ALVC162835 ALVCF162835 CDC2509 CDCF2509. 100MHz samsung capacitance Manufacturing location CDCF2509 M377S1620ET3 samsung capacitance year code

    KMM466S924T-F0

    Abstract: No abstract text available
    Text: Preliminary 144pin SDRAM SODIMM KMM466S924T KMM466S924T SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S924T is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF 144pin KMM466S924T KMM466S924T 8Mx64 8Mx16, 400mil 144-pin KMM466S924T-F0

    KM48S16030T-F10

    Abstract: KMM466S1723T-F0
    Text: KMM466S1723T2 Preliminary 144pin SDRAM SODIMM Revision History Revision .1 April 1998 - Self refresh current (ICC6 ) is changed. REV. 2 April '98 Preliminary 144pin SDRAM SODIMM KMM466S1723T2 KMM466S1723T SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD


    Original     		PDF KMM466S1723T2 144pin KMM466S1723T 16Mx64 16Mx8, 400mil KM48S16030T-F10 KMM466S1723T-F0

    All nokia mobile ic code number image

    Abstract: All nokia mobile ic code image ericsson all equipment abbreviation telecommunications date code samsung capacitors chip tpm laptop NP-R65 Samsung P30 samsung p60 T2300 transistor
    Text: This Document can not be used without Samsung's authorization. 11. Reference 1 CTO Computer Model Numbering System) (1) CTO SAMSUNG X60 Plus< 11 - 1 > This Document can not be used without Samsung's authorization. 11. Reference SAMSUNG X60 Plus< 11 - 2 >


    Original     		PDF

    KM48S2020CT-F10

    Abstract: KMM466S203CT-F0 KM48S2020
    Text: KMM466S203CT 144pin SDRAM SODIMM Revision History Revision . 2 Mar. 1998 •Some Parameter values & Charcteristeristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.


    Original     		PDF KMM466S203CT 144pin 200mV. KMM466S203CT 2Mx64 66MHz KM48S2020CT-F10 KMM466S203CT-F0 KM48S2020

    KMM366S204CTL-G0

    Abstract: No abstract text available
    Text: KMM366S204CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) :±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.


    Original     		PDF KMM366S204CTL 200mV. 2K/32ms 4K/64ms. KMM366S204CTL 2Mx64 1Mx16, 66MHz KMM366S204CTL-G0

    KM416S4030BT-F10

    Abstract: KMM466S824BT2
    Text: KMM466S824BT2 144pin SDRAM SODIMM Revision History Revision .2 March 1998 Some Parameter values & Chracteristics of comp. level are changed as below : - Input leakage Currents (Inputs) : ± 5uA to ± 1uA. Input leakage Currents (I/O) : ± 5uA to ± 1.5uA.


    Original     		PDF KMM466S824BT2 144pin 66MHz KM416S4030BT-F10 KMM466S824BT2

    KM416S4020

    Abstract: KM416S4020BT-G10
    Text: KMM366S804BTL PC66 SDRAM MODULE Revision History Revision .3 March 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.


    Original     		PDF KMM366S804BTL 200mV. 66MHz KM416S4020 KM416S4020BT-G10

    KM48S8020

    Abstract: KMM366S1603BTL-G0
    Text: KMM366S1603BTL PC66 SDRAM MODULE Revision History Revision .3 March 1998 Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.


    Original     		PDF KMM366S1603BTL 200mV. 66MHz KM48S8020 KMM366S1603BTL-G0

    M366S0824ET0

    Abstract: M366S0824ET0-C1H M366S0824ET0-C1L
    Text: PC100 Unbuffered DIMM M366S0824ET0 M366S0824ET0 SDRAM DIMM 8Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S0824ET0 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF PC100 M366S0824ET0 M366S0824ET0 8Mx64 4Mx16, 400mil 168-pin M366S0824ET0-C1H M366S0824ET0-C1L

    M374S1623ET0

    Abstract: M374S1623ET0-C1L
    Text: M374S1623ET0 PC100 Unbuffered DIMM M374S1623ET0 SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S1623ET0 is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF M374S1623ET0 PC100 M374S1623ET0 16Mx72 400mil 168-pin M374S1623ET0-C1L

    Untitled

    Abstract: No abstract text available
    Text: M464S0424FTS PC133/PC100 SODIMM M464S0424FTS SDRAM SODIMM 4Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S0424FTS is a 4M bit x 64 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung


    Original     		PDF M464S0424FTS PC133/PC100 M464S0424FTS 4Mx64 4Mx16, 400mil 144-pin

    KM48S8030BT-G10

    Abstract: KM48S8030BT KM48S8030BT-G
    Text: KMM374S823BTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.


    Original     		PDF KMM374S823BTL 200mV. 66MHz KM48S8030BT-G10 KM48S8030BT KM48S8030BT-G

    KM48S2020CT-G10

    Abstract: KMM366S403CTL KMM366S403CTL-G0 KM48S2020 KM48S2020CT-G
    Text: KMM366S403CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.


    Original     		PDF KMM366S403CTL 200mV. KMM366S403CTL 4Mx64 66MHz KM48S2020CT-G10 KMM366S403CTL-G0 KM48S2020 KM48S2020CT-G