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    DATASHEETS R 1004 TRANSISTOR Search Results

    DATASHEETS R 1004 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    DATASHEETS R 1004 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ua723cn

    Abstract: fairchild ua723 UA723C UA723 uA723 application note UA723 fairchild
    Text: µA723 PRECISION VOLTAGE REGULATORS SLVS057D – AUGUST 1972 – REVISED JULY 1999 D D D D D D OR N PACKAGE TOP VIEW 150-mA Load Current Without External Power Transistor Adjustable Current-Limiting Capability Input Voltages up to 40 V Output Adjustable From 2 V to 37 V


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    PDF SLVS057D 150-mA A723C UA723CDR UA723CJ UA723CN UA723CNSR ua723cn fairchild ua723 UA723C UA723 uA723 application note UA723 fairchild

    K9F2808Q0C-HCB0

    Abstract: K9F2808U0C K9F2808U0C-FCB0 K9F2808U0C-HCB0 K9F2808U0C-PCB0 K9F2816Q0C-HCB0 K9F2816U0C-HCB0 K9F2816U0C-PCB0 K9F2808U0C-YCB0
    Text: FLASH MEMORY K9F2808U0C Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Apr. 15th 2002 Advance 1.0 TBGA PKG Dimension Change 48-Ball, 6.0mm x 8.5mm -> 63-Ball, 9.0mm x 11.0mm Sep. 5th 2002


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    PDF K9F2808U0C 48-Ball, 63-Ball, K9F28XXQ0C K9F2808Q0C-HCB0 K9F2808U0C K9F2808U0C-FCB0 K9F2808U0C-HCB0 K9F2808U0C-PCB0 K9F2816Q0C-HCB0 K9F2816U0C-HCB0 K9F2816U0C-PCB0 K9F2808U0C-YCB0

    SAMSUNG moviNAND

    Abstract: marking date code samsung semiconductor NAND FLASH QDP movinand DECODER SLC nand hamming code 512 bytes 48 TSOP1 1220F samsung 128G nand flash NAND Flash Code Information date code marking samsung Nand K9F2808U0C-PCB0
    Text: FLASH MEMORY K9F2808U0C Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Apr. 15th 2002 Advance 1.0 TBGA PKG Dimension Change 48-Ball, 6.0mm x 8.5mm -> 63-Ball, 9.0mm x 11.0mm Sep. 5th 2002


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    PDF K9F2808U0C 48-Ball, 63-Ball, K9F28XXQ0C K9F2808U0C-FCB0 K9F2808Q0C-HCB0 K9F2816U0C-HCB0 K9F2816U0C-PCB0 K9F2816Q0C-HCB0 K9F2808U0C-HCB0 SAMSUNG moviNAND marking date code samsung semiconductor NAND FLASH QDP movinand DECODER SLC nand hamming code 512 bytes 48 TSOP1 1220F samsung 128G nand flash NAND Flash Code Information date code marking samsung Nand K9F2808U0C-PCB0

    Untitled

    Abstract: No abstract text available
    Text: K9F2808Q0B K9F2808U0B FLASH MEMORY Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Advance 0.0 Initial issue. May 28th 2001 0.1 K9F2808U0B 3.3V device ’s qualification is finished Jun. 30th 2001 0.2 K9F2808Q0B (1.8V device)


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    PDF K9F2808Q0B K9F2808U0B K9F2808U0B K9F2808Q0B 200us 300us 100ns

    Untitled

    Abstract: No abstract text available
    Text: Revision 3 Accelerator Series FPGAs – ACT 3 Family Features • Up to 10,000 Gate Array Equivalent Gates up to 25,000 equivalent PLD Gates • Highly Predictable Performance with 100% Automatic Placeand-Route • As Low as 9.0 ns Clock-to-Output Times (–1 Speed Grade)


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    PDF 20-Pin 16-bit,

    Untitled

    Abstract: No abstract text available
    Text: K9F2808U0C K9F2816U0C FLASH MEMORY Document Title 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Apr. 15th 2002 Advance 1.0 TBGA PKG Dimension Change 48-Ball, 6.0mm x 8.5mm -> 63-Ball, 9.0mm x 11.0mm


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    PDF K9F2808U0C K9F2816U0C 48-Ball, 63-Ball, K9F28XXQ0C K9F2808U0C-FCB0 K9F2808Q0C-HCB0 K9F2816U0C-HCB0 K9F2816U0C-PCB0 K9F2816Q0C-HCB0

    G711

    Abstract: No abstract text available
    Text:  ISO2-CMOS MT8960/61/62/63/64/65/66/67 Integrated PCM Filter Codec Features • • • • • • • • • • • • • • ISSUE 10 ST-BUS compatible Transmit/Receive filters & PCM Codec in one I.C Meets AT&T D3/D4 and CCITT G711 and G712 µ-Law: MT8960/62/64/67


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    PDF MT8960/61/62/63/64/65/66/67 MT8960/62/64/67 MT8961/63/65/67 MT8964/65/66/67 MT8960/61/62/63 G711

    220v AC voltage stabilizer schematic diagram

    Abstract: FUSE M2 250e 11kV breaker control circuit diagram bussmann Fuse 170L series bussmann semiconductor fuse catalogue arc welder schematic HRC fuse gg GEC relay applications for 6.6kV switchgear ups circuits 170E bussmann
    Text: Circuit Protection Products for the Electrical Industry New Products for All Markets For product data sheets, visit www.cooper.bussmann.com/products/datasheet.asp Circuit Protection Products for the Electrical Industry Table of Contents RED indicates NEW information


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    PDF 0210-55M 220v AC voltage stabilizer schematic diagram FUSE M2 250e 11kV breaker control circuit diagram bussmann Fuse 170L series bussmann semiconductor fuse catalogue arc welder schematic HRC fuse gg GEC relay applications for 6.6kV switchgear ups circuits 170E bussmann

    170M8554

    Abstract: bussmann Fuse 450 amps 250 volts max zs FM09 PS Jet 20A 300v fuse
    Text: Circuit Protection Products for the Electrical Industry New Products for All Markets For product data sheets, visit www.cooper.bussmann.com/products/datasheet.asp Circuit Protection Products for the Electrical Industry Table of Contents RED indicates NEW information


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    PDF 0210-55M 170M8554 bussmann Fuse 450 amps 250 volts max zs FM09 PS Jet 20A 300v fuse

    Untitled

    Abstract: No abstract text available
    Text: FLASH MEMORY K9F5608U0B Document Title 32M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Advance 0.0 Initial issue. May. 15th 2001 0.1 At Read2 operation in X16 device : A3 ~ A7 are Don’t care => A3 ~ A7 are "L" Sep. 20th 2001


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    PDF K9F5608U0B

    Untitled

    Abstract: No abstract text available
    Text: FLASH MEMORY K9F5608U0B Document Title 32M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Advance 0.0 Initial issue. May. 15th 2001 0.1 At Read2 operation in X16 device : A3 ~ A7 are Don’t care => A3 ~ A7 are "L" Sep. 20th 2001


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    PDF K9F5608U0B

    2N2369 equivalent

    Abstract: No abstract text available
    Text: IRFNJ9130 IRF9130SMD05 MECHANICAL DATA Dimensions in mm inches 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 3 5.72 (.225) 0.76 (0.030) min. 1 2 VDSS ID(cont) RDS(on) 10.16 (0.400)


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    PDF IRFNJ9130 IRF9130SMD05 -100V SMD05 O-276AA) O276AA) 860pF IRF9130SMD05DGS 2N2369 equivalent

    diode bs 9300

    Abstract: lvt 817 Automatic Railway Gate Control system, PD9002 U3158 jan,tx series semiconductors 2n2369 die smd code marking a3a SMD-05 smd diodes s4 1.5w
    Text: IRFNJ9130 IRF9130SMD05 MECHANICAL DATA Dimensions in mm inches 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 3 5.72 (.225) 0.76 (0.030) min. 1 2 VDSS ID(cont) RDS(on) 10.16 (0.400)


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    PDF IRFNJ9130 IRF9130SMD05 -100V SMD05 O-276AA) IRFNJ9130 IRF9130SMD05DSG" IRF9130SMD05DSG O276AA) diode bs 9300 lvt 817 Automatic Railway Gate Control system, PD9002 U3158 jan,tx series semiconductors 2n2369 die smd code marking a3a SMD-05 smd diodes s4 1.5w

    Samsung NAND

    Abstract: K9K1216U0C
    Text: K9K1208Q0C K9K1208D0C K9K1208U0C K9K1216Q0C K9K1216D0C K9K1216U0C FLASH MEMORY Document Title 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Advance 0.0 Initial issue. Sep. 12th 2002 1.0 1.Pin assignment of TBGA dummy ball is changed.


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    PDF K9K1208Q0C K9K1208D0C K9K1208U0C K9K1216Q0C K9K1216D0C K9K1216U0C 20mA-- Samsung NAND K9K1216U0C

    K9K1208D0C

    Abstract: K9K1208Q0C K9K1208U0C K9K1208U0C-HCB0 K9K1216D0C K9K1216Q0C K9K1216U0C
    Text: K9K1208Q0C K9K1208D0C K9K1208U0C K9K1216Q0C K9K1216D0C K9K1216U0C FLASH MEMORY Document Title 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Advance 0.0 Initial issue. Sep. 12th 2002 1.0 1.Pin assignment of TBGA dummy ball is changed.


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    PDF K9K1208Q0C K9K1208D0C K9K1208U0C K9K1216Q0C K9K1216D0C K9K1216U0C 20mA-- 30mry K9K1208D0C K9K1208Q0C K9K1208U0C K9K1208U0C-HCB0 K9K1216D0C K9K1216Q0C K9K1216U0C

    63 ball fbga

    Abstract: K9K1208D0C K9K1208Q0C K9K1208U0C K9K1208U0C-HCB0 K9K1216D0C K9K1216Q0C K9K1216U0C K9K1208D
    Text: K9K1208Q0C K9K1208D0C K9K1208U0C K9K1216Q0C K9K1216D0C K9K1216U0C FLASH MEMORY Document Title 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Advance 0.0 Initial issue. Sep. 12th 2002 1.0 1.Pin assignment of TBGA dummy ball is changed.


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    PDF K9K1208Q0C K9K1208D0C K9K1208U0C K9K1216Q0C K9K1216D0C K9K1216U0C 20mA-- 30mry 63 ball fbga K9K1208D0C K9K1208Q0C K9K1208U0C K9K1208U0C-HCB0 K9K1216D0C K9K1216Q0C K9K1216U0C K9K1208D

    Untitled

    Abstract: No abstract text available
    Text: K9K1208Q0C K9K1208D0C K9K1208U0C K9K1216Q0C K9K1216D0C K9K1216U0C FLASH MEMORY Document Title 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Advance 0.0 Initial issue. Sep. 12th 2002 1.0 1.Pin assignment of TBGA dummy ball is changed.


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    PDF K9K1208Q0C K9K1208D0C K9K1208U0C K9K1216Q0C K9K1216D0C K9K1216U0C 20mA-- 30mase

    K9K1208D0C

    Abstract: K9K1208Q0C K9K1208U0C K9K1208U0C-HCB0 K9K1216D0C K9K1216Q0C K9K1216U0C
    Text: K9K1208Q0C K9K1208D0C K9K1208U0C K9K1216Q0C K9K1216D0C K9K1216U0C FLASH MEMORY Document Title 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Advance 0.0 Initial issue. Sep. 12th 2002 1.0 1.Pin assignment of TBGA dummy ball is changed.


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    PDF K9K1208Q0C K9K1208D0C K9K1208U0C K9K1216Q0C K9K1216D0C K9K1216U0C 20mA-- 30mry K9K1208D0C K9K1208Q0C K9K1208U0C K9K1208U0C-HCB0 K9K1216D0C K9K1216Q0C K9K1216U0C

    512M x 8 Bit NAND Flash Memory

    Abstract: 8bit nand flash bad block K9K1216Q0C K9K1208D0C K9K1208Q0C K9K1208Q0C-HCB0 K9K1208U0C K9K1208U0C-HCB0 K9K1216D0C
    Text: K9K1208Q0C K9K1208D0C K9K1208U0C K9K1216Q0C K9K1216D0C K9K1216U0C FLASH MEMORY Document Title 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Advance 0.0 Initial issue. Sep. 12th 2002 1.0 1.Pin assignment of TBGA dummy ball is changed.


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    PDF K9K1208Q0C K9K1208D0C K9K1208U0C K9K1216Q0C K9K1216D0C K9K1216U0C 20mA-- 30mry 512M x 8 Bit NAND Flash Memory 8bit nand flash bad block K9K1216Q0C K9K1208D0C K9K1208Q0C K9K1208Q0C-HCB0 K9K1208U0C K9K1208U0C-HCB0 K9K1216D0C

    K9F5608U0C-PCB0

    Abstract: No abstract text available
    Text: K9F5608Q0C K9F5608D0C K9F5608U0C K9F5616Q0C K9F5616D0C K9F5616U0C FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Apr. 25th 2002 Advance 1.0 1.Pin assignment of TBGA dummy ball is changed.


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    PDF K9F5608Q0C K9F5608D0C K9F5608U0C K9F5616Q0C K9F5616D0C K9F5616U0C 20mA-- K9F5608U0C-PCB0

    K9F5608U0C-PCB0

    Abstract: K9F5608D0C lockpre K9F5608U0C K9F5608Q0C K9F5608Q0C-HCB0 K9F5608U0C-FCB0 K9F5616D0C K9F5616Q0C K9F5616U0C
    Text: K9F5608Q0C K9F5608D0C K9F5608U0C K9F5616Q0C K9F5616D0C K9F5616U0C FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Apr. 25th 2002 Advance 1.0 1.Pin assignment of TBGA dummy ball is changed.


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    PDF K9F5608Q0C K9F5608D0C K9F5608U0C K9F5616Q0C K9F5616D0C K9F5616U0C K9F5608U0C-PCB0 K9F5608D0C lockpre K9F5608U0C K9F5608Q0C K9F5608Q0C-HCB0 K9F5608U0C-FCB0 K9F5616D0C K9F5616Q0C K9F5616U0C

    K9F1208

    Abstract: nand flash 512M program for random number generator K9F1208Q0A K9F1208Q0A-HCB0 K9F1208U0A K9F1208U0A-FCB0 K9F1208U0A-HCB0 K9F1208U0A-PCB0 K9F1216Q0A-HCB0
    Text: K9F1216U0A K9F1208U0A FLASH MEMORY Document Title 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial issue. Apr. 25th 2002 0.1 TBGA K9F12XXX0A-DCB0/DIB0 size information is changed.


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    PDF K9F1216U0A K9F1208U0A K9F12XXX0A-DCB0/DIB0) K9F1208 nand flash 512M program for random number generator K9F1208Q0A K9F1208Q0A-HCB0 K9F1208U0A K9F1208U0A-FCB0 K9F1208U0A-HCB0 K9F1208U0A-PCB0 K9F1216Q0A-HCB0

    K9F5608U0C

    Abstract: Samsung Nand K9F5608D0C K9F5608Q0C K9F5608Q0C-HCB0 K9F5608U0C-FCB0 K9F5616D0C K9F5616Q0C K9F5616U0C K9F5616U0C-HCB0
    Text: K9F5608Q0C K9F5608D0C K9F5608U0C K9F5616Q0C K9F5616D0C K9F5616U0C FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Apr. 25th 2002 Advance 1.0 1.Pin assignment of TBGA dummy ball is changed.


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    PDF K9F5608Q0C K9F5608D0C K9F5608U0C K9F5616Q0C K9F5616D0C K9F5616U0C K9F5608U0C Samsung Nand K9F5608D0C K9F5608Q0C K9F5608Q0C-HCB0 K9F5608U0C-FCB0 K9F5616D0C K9F5616Q0C K9F5616U0C K9F5616U0C-HCB0

    Untitled

    Abstract: No abstract text available
    Text: SMFV008 SmartMedia Document Title 8M x 8 Bit SmartMedia™ Card Revision History Revision No, History 0.0 1.0 Data Sheet, 1997 Data Sheet, 1998 1. Changed tBERS parameter : 10ms Max. -> 4ms(Max.) 2. Changed Valid Block Number : 1004(Min.) -> 1014(Min.)


    OCR Scan
    PDF SMFV008