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    DATASHEET IRFP260 MOSFET Search Results

    DATASHEET IRFP260 MOSFET Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    DATASHEET IRFP260 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFP260

    Abstract: No abstract text available
    Text: IRFP260, SiHFP260 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.055 Qg (Max.) (nC) 230 Qgs (nC) 42 Qgd (nC) 110 Configuration Single D TO-247AC Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFP260, SiHFP260 O-247AC 2002/95/EC 11-Mar-11 IRFP260

    Untitled

    Abstract: No abstract text available
    Text: IRFP260, SiHFP260 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.055 Qg (Max.) (nC) 230 Qgs (nC) 42 Qgd (nC) 110 Configuration Single D TO-247AC Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFP260, SiHFP260 O-247AC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    ic 91215

    Abstract: No abstract text available
    Text: IRFP260, SiHFP260 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.055 Qg (Max.) (nC) 230 Qgs (nC) 42 Qgd (nC) 110 Configuration Single D TO-247AC Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFP260, SiHFP260 O-247AC 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A ic 91215

    Y145

    Abstract: IRFP260
    Text: IRFP260, SiHFP260 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.055 Qg (Max.) (nC) 230 Qgs (nC) 42 Qgd (nC) 110 Configuration Single D TO-247AC Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFP260, SiHFP260 2002/95/EC O-247AC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Y145 IRFP260

    irfp260

    Abstract: No abstract text available
    Text: IRFP260, SiHFP260 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.055 Qg (Max.) (nC) 230 Qgs (nC) 42 Qgd (nC) 110 Configuration Single D TO-247AC Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFP260, SiHFP260 2002/95/EC O-247AC O-247AC 11-Mar-11 irfp260

    IRFP260

    Abstract: IRF*260
    Text: IRFP260, SiHFP260 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.055 Qg (Max.) (nC) 230 Qgs (nC) 42 Qgd (nC) 110 Configuration Single D TO-247AC Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFP260, SiHFP260 2002/95/EC O-247AC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFP260 IRF*260

    IRF1010E

    Abstract: irf 4110 irfbf30 IRFPF50 irf7333 IRFP044N IRF4905 equivalent Irf520N IRFD110 IRF7606
    Text: HEXFET Power MOSFETs www.irf.com ID ID V BR DSS Continuous RΘ PD Drain-to-Source R DS(on) Continuous On-State Drain Current Drain Current Max. Thermal Max. Power Breakdown 70° Part Resistance Voltage Resistance 1 Dissipation 1 25°C (A) (V) (Ω ) (°C/W)


    Original     		PDF IRLML2402* IRLML2803 IRLML6302* IRLML5103 IRL3303L IRL3103L IRL2203NL IRL3803L IRLZ24NL IRLZ34NL IRF1010E irf 4110 irfbf30 IRFPF50 irf7333 IRFP044N IRF4905 equivalent Irf520N IRFD110 IRF7606

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836