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    DARLINGTON TRANSISTOR WITH BUILT-IN TEMPERATURE C Search Results

    DARLINGTON TRANSISTOR WITH BUILT-IN TEMPERATURE C Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LBAA0QB1SJ-295 Murata Manufacturing Co Ltd SX1262 MODULE WITH OPEN MCU Visit Murata Manufacturing Co Ltd
    GRJ43DR7LV224KW01K Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors with Soft Termination for General Purpose Visit Murata Manufacturing Co Ltd
    GRJ55DR7LV474KW01L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors with Soft Termination for General Purpose Visit Murata Manufacturing Co Ltd
    GRJ55DR7LV334KW01K Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors with Soft Termination for General Purpose Visit Murata Manufacturing Co Ltd
    GRJ43QR7LV154KW01L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors with Soft Termination for General Purpose Visit Murata Manufacturing Co Ltd

    DARLINGTON TRANSISTOR WITH BUILT-IN TEMPERATURE C Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    t01 transistor

    Abstract: STD03N SANKEN AUDIO sanken transistor TRANSISTOR sanken catalog std03 STD03P darlington transistor for audio power application 8DARLINGTON sanken power transistor
    Text: Darlington Transistor with built-in compensation diodes STD03P March, 2006 •Package -MT-105 TO3P 5-pin ■Features ● High collector power dissipation: Pc=160W (with TO-3P) ● Low internal impedance by means of thinner die structure ● Built-in temperature compensation diode


    Original     		STD03P ---MT-105 STD03N T01-002EA-060309 t01 transistor STD03N SANKEN AUDIO sanken transistor TRANSISTOR sanken catalog std03 STD03P darlington transistor for audio power application 8DARLINGTON sanken power transistor PDF

    sanken SAP16

    Abstract: sap16 SAP16P LF550 LF550 outline SAP16*p transistor 0882 marking FA 5pin toshiba TLX transistor darlington sap16p
    Text: .b fin ite n £ » SANKEN ELECTRIC COMPANY, LTD. DEVICE TYPE NAME KR^X> y S A P 1 6 P LF550 150W Darlington Transistor with built-in temperature compensation diodes and an emitter resistor SAP16P (LF550) Scope C omtek, Y R v m s a p i6 p K -o v m m rn 'th o


    OCR Scan     		SAP16P LF550) SAP16P SAP16P. SSE-21986 sanken SAP16 sap16 LF550 LF550 outline SAP16*p transistor 0882 marking FA 5pin toshiba TLX transistor darlington sap16p PDF

    TIP110 equivalent

    Abstract: No abstract text available
    Text: TIP110/111/112 TIP110/111/112 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • Complementary to TIP115/116/117 High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A Min. Low Collector-Emitter Saturation Voltage Industrial Use TO-220


    Original     		TIP110/111/112 TIP115/116/117 O-220 TIP110 TIP111 TIP112 TIP110 equivalent PDF

    TIP142TU

    Abstract: TIP141LTU tip140 equivalent
    Text: TIP140/141/142 TIP140/141/142 Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. • Industrial Use • Complement to TIP145/146/147 TO-3P 1 NPN Epitaxial Silicon Darlington Transistor


    Original     		TIP140/141/142 TIP145/146/147 TIP140 TIP141 TIP142 TIP140 TIP142TU TIP141LTU tip140 equivalent PDF

    TIP147F

    Abstract: TIP146F TIP145F
    Text: TIP145F/146F/147F TIP145F/146F/147F Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A Min. • Industrial Use • Complement to TIP140F/141F/142F TO-3PF 1 1.Base PNP Epitaxial Darlington Transistor


    Original     		TIP145F/146F/147F TIP140F/141F/142F TIP145F TIP146F TIP147F TIP145F TIP146F PDF

    Untitled

    Abstract: No abstract text available
    Text: TIP140T/141T/142T TIP140T/141T/142T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. • Industrial Use • Complement to TIP145T/146T/147T TO-220 1 1.Base 2.Collector 3.Emitter


    Original     		TIP140T/141T/142T TIP145T/146T/147T O-220 TIP140T TIP141T TIP142T PDF

    Untitled

    Abstract: No abstract text available
    Text: TIP105/106/107 TIP105/106/107 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • • High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial Use


    Original     		TIP105/106/107 TIP100/101/102 O-220 TIP105 TIP106 TIP107 PDF

    1412D

    Abstract: UDN2983A equivalent 1411d M54522P equivalent DARLINGTON SINK DRIVER TLP251 equivalent M54563P equivalent ULN2804A application relay driver ic ULN2804 td62304ap
    Text: TOSHIBA INTERFACE DRIVER ULN2000 TD62xxx TD62Mxxx TB62xxx SERIES SERIES SERIES SERIES Internal Internal&&External ExternalConcept Concept Applicable to Hi-Speed BiCMOS Applicable to Hi-Voltage BiCMOS Graphics MOVEMENT Video Signal MPU Pentium PowerPC ALPHA


    Original     		ULN2000 TD62xxx TD62Mxxx TB62xxx RS232C RS422 25degC) TD62445FN SSOP18-P-225-0 1412D UDN2983A equivalent 1411d M54522P equivalent DARLINGTON SINK DRIVER TLP251 equivalent M54563P equivalent ULN2804A application relay driver ic ULN2804 td62304ap PDF

    HOA1404-3

    Abstract: No abstract text available
    Text: HONEYWELL INC/ MICRO 41E D • 4S51630 D013fifi3 0 ■ H O N 1 7 = # * < 0 / T- Ml-73 Reflective With Hermetic Components Assemblies Honeywell offers the world’s largest line of reflective assemblies built with hermetic components. HOA1160 uses components from the SE2450IRED, S02440


    OCR Scan     		4S51630 D013fifi3 HOA1160 SE2450IRED, S02440 SD2440 HOA1180, HOA1404 HOA2498 SE1450 HOA1404-3 PDF

    Untitled

    Abstract: No abstract text available
    Text: TIP145T/146T/147T PNP Epitaxial Silicon Darlington Transistor Monolithic Construction With Built In Base-Emitter Shunt Resistors • • • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A Min. Industrial Use Complement to TIP140T/141T/142T Equivalent Circuit


    Original     		TIP145T/146T/147T TIP140T/141T/142T O-220 TIP145T TIP146T TIP147T TIP145T/146T/147T PDF

    Untitled

    Abstract: No abstract text available
    Text: TIP110/TIP111/TIP112 NPN Epitaxial Silicon Darlington Transistor • • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors Complementary to TIP115/116/117 High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A Min. Low Collector-Emitter Saturation Voltage


    Original     		TIP110/TIP111/TIP112 TIP115/116/117 O-220 TIP110 TIP111 TIP112 TIP110/TIP111/TIP112 PDF

    Untitled

    Abstract: No abstract text available
    Text: TIP100/TIP101/TIP102 NPN Epitaxial Silicon Darlington Transistor • • • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage


    Original     		TIP100/TIP101/TIP102 TIP105/106/107 O-220 TIP100 TIP101 TIP102 TIP100/TIP101/TIP102 PDF

    tip117

    Abstract: TIP116
    Text: TIP115/TIP116/TIP117 PNP Epitaxial Silicon Darlington Transistor • • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -1A Min. Low Collector-Emitter Saturation Voltage Industrial Use


    Original     		TIP115/TIP116/TIP117 TIP110/111/112 O-220 TIP115 TIP116 TIP117 TIP115/TIP116/TIP117 tip117 TIP116 PDF

    tip107

    Abstract: TIP105
    Text: TIP105/TIP106/TIP107 PNP Epitaxial Silicon Darlington Transistor • • • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage


    Original     		TIP105/TIP106/TIP107 TIP100/101/102 O-220 TIP105 TIP106 TIP107 TIP105/TIP106/TIP107 tip107 TIP105 PDF

    four-layer diode

    Abstract: A CLIPPER CIRCUIT APPLICATIONS noise diode generator squarewave generator notes Zener Diode B triangle wave application note Zener Diode high frequency applications SWITCHING TRANSISTOR 144 Power supply AC to DC zener diode CCL0750
    Text: CLD Application Notes Connection Options Series–Higher voltages may be obtained by connecting identical CLDs in series Figure 4 . Voltage balancing resistors are recommended. Since the resistors shunt the output resistance, their values should be high.


    Original     		CCL0035 CCL0130 CCL0750 four-layer diode A CLIPPER CIRCUIT APPLICATIONS noise diode generator squarewave generator notes Zener Diode B triangle wave application note Zener Diode high frequency applications SWITCHING TRANSISTOR 144 Power supply AC to DC zener diode PDF

    NPN Transistor 8A

    Abstract: TIP102 Darlington transistor
    Text: NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, IC=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 • Complementary to TIP105/106/107


    Original     		TIP100/101/102 O-220 TIP105/106/107 TIP100 TIP101 TIP102 NPN Transistor 8A TIP102 Darlington transistor PDF

    darlington transistor with built-in temperature c

    Abstract: BU323Z
    Text: MOTOROLA Order this document by BU323Z/D SEMICONDUCTOR TECHNICAL DATA Advance Information NPN Silicon Power Darlington High Voltage Autoprotected The BU323Z is a planar, monolithic, high–voltage power Darlington with a built–in active zener clamping circuit. This device is specifically designed for unclamped,


    Original     		BU323Z/D BU323Z BU323Z/D* darlington transistor with built-in temperature c PDF

    ic1 555

    Abstract: ic2 555 ZTX850 ZTX950 DATASHEET OF IC 555 555 timer astable multivibrator 790A ZSD100 Piezo Transducers voltage controlled oscillator using ic 555
    Text: Application Note 16 Issue 1 March 1996 Application Note 16 Issue 1 March 1996 ZD1 Automotive and Household Siren Driver Circuits D5 R6 +12V C5 R12 ZSD100 and Discrete ’H’ Bridge Minimum Part Count Solution R13 D2 D4 TR6 TR4 David Brotton Neil Chadderton


    Original     		ZSD100 ZSD100 ic1 555 ic2 555 ZTX850 ZTX950 DATASHEET OF IC 555 555 timer astable multivibrator 790A Piezo Transducers voltage controlled oscillator using ic 555 PDF

    2N6056

    Abstract: 2N6054 npn darlington transistor 200 watts 2A 80v complementary transistor
    Text: A LAMBDA COMPLEMENTARY POWER DARLINGTONS 2N6054,2N6056 100 WATT 8 A M P CONTINUOUS, 16 A M P PE A K ‘MAXIMUM RATINGS P A RA M ET ER • Electrical specifications guaranteed at 25°C • Guaranteed minimum DC current gain at full rated current • Hermetically sealed


    OCR Scan     		2N6054 2N6056 2N6056 during6056) 2N6054) 2N6054, npn darlington transistor 200 watts 2A 80v complementary transistor PDF

    BU323Z

    Abstract: free ic 555 BU323Z-D transistor ignition circuit
    Text: ON Semiconductort BU323Z NPN Silicon Power Darlington High Voltage Autoprotected AUTOPROTECTED DARLINGTON 10 AMPERES 360 −450 VOLTS CLAMP 150 WATTS The BU323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is


    Original     		BU323Z BU323Z BU323Z/D free ic 555 BU323Z-D transistor ignition circuit PDF

    TRANSISTOR ARRAY

    Abstract: NTE2083
    Text: NTE2083 Integrated Circuit 6−Segment, 150mA Darlington Transistor Array Description: The circuit construction of this IC is a Darlington transistor array with six units, most suitable for printer hammer drive, lamp, and relay drive. With built−in protective diodes against negative inputs, it is advantageous in designing drive circuits for printer calculators and cash registers.


    Original     		NTE2083 150mA 18-digit 230mA TRANSISTOR ARRAY NTE2083 PDF

    2N6385

    Abstract: 2N6650
    Text: A LAMBDA COMPLEMENTARY POWER DARLINGTONS 2N6385,2N6650 100 WATT 10 A M P CONTINUOUS, 15 A M P PEAK ‘ MAXIMUM RATINGS P A RA M ET ER SYM BO L Collector Em itter Voltage Collector Base Voltage Em itter Base Voltage V ebo Collector Current Continuous Peak*


    OCR Scan     		2N6385, 2N6650 2N6650) 2N6385 2N6650 PDF

    Untitled

    Abstract: No abstract text available
    Text: TIP140T / TIP141T / TIP142T NPN Epitaxial Silicon Darlington Transistor Features • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. Industrial Use Complement to TIP145T/146T/147T


    Original     		TIP140T TIP141T TIP142T TIP145T/146T/147T O-220 TIP140T TIP141T PDF

    Untitled

    Abstract: No abstract text available
    Text: -/ , Una. CX 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 PMD18D100 NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm FEATURES • TO3 PACKAGE • 100V • 100APEAK L • 300 WATTS *.* DESCRIPTION TO3 Package.


    Original     		PMD18D100 100APEAK PMD18D100 100mA 300us, PDF