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    DARLINGTON TRANSISTOR 2N2905 Search Results

    DARLINGTON TRANSISTOR 2N2905 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    DARLINGTON TRANSISTOR 2N2905 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor BF245

    Abstract: BC237 transistor motorola 2n3053 MMBF5486 TRANSISTOR REPLACEMENT FOR 2N3053 855 sot363
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZTA14T1 NPN SmallĆSignal Darlington Transistor Motorola Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The


    Original     		PDF OT-223 PZTA14T1 inch/1000 U218A MSC1621T1 MSC2404 MSD1819A MV1620 transistor BF245 BC237 transistor motorola 2n3053 MMBF5486 TRANSISTOR REPLACEMENT FOR 2N3053 855 sot363

    BF245 TRANSISTOR

    Abstract: transistor BF245 BC237 transistor motorola 2n3053 Transistor BC107b motorola transistor 2N3819
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZTA64T1 PNP SmallĆSignal Darlington Transistor Motorola Preferred Device This PNP small-signal darlington transistor is designed for use in preamplifiers input applications or wherever it is necessary to have a high input impedance.


    Original     		PDF OT-223 PZTA64T1 inch/1000 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 BF245 TRANSISTOR transistor BF245 BC237 transistor motorola 2n3053 Transistor BC107b motorola transistor 2N3819

    BC237

    Abstract: bc547 small signal low power transistor transistor equivalent 2n5551 MPSA27 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistor MPSA27 NPN Silicon COLLECTOR 3 BASE 2 EMITTER 1 1 2 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol MPSA27 Unit Collector – Emitter Voltage VCES 60 Vdc Emitter – Base Voltage


    Original     		PDF MPSA27 226AA) MPSA27 Br218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237 bc547 small signal low power transistor transistor equivalent 2n5551 MPSA27 equivalent

    BC237

    Abstract: 2507 14PIN transistor BF245 A
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Darlington Transistor MPQ6426 NPN Silicon 14 13 12 11 10 9 8 5 6 7 NPN 1 2 3 4 MAXIMUM RATINGS 14 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 30 Vdc Collector – Base Voltage VCBO 40 Vdc Emitter – Base Voltage


    Original     		PDF MPQ6426 Effective218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 2507 14PIN transistor BF245 A

    2n2222 npn bipolar junction

    Abstract: 2N2905 MOTOROLA motorola transistor ignition MJE5740-D MJE5742 2N2905 equivalent 2N2905 MOTOROLA datasheet data sheet book TRANSISTOR 2N2222 2n2222 transistor to 92 MR826 diode
    Text: MOTOROLA Order this document by MJE5740/D SEMICONDUCTOR TECHNICAL DATA MJE5740 MJE5741 * MJE5742 * NPN Silicon Power Darlington Transistors *Motorola Preferred Device The MJE5740, 41, 42 Darlington transistors are designed for high–voltage power switching in inductive circuits. They are particularly suited for operation in applications


    Original     		PDF MJE5740/D* MJE5740/D 2n2222 npn bipolar junction 2N2905 MOTOROLA motorola transistor ignition MJE5740-D MJE5742 2N2905 equivalent 2N2905 MOTOROLA datasheet data sheet book TRANSISTOR 2N2222 2n2222 transistor to 92 MR826 diode

    MJE5742 equivalent

    Abstract: 2n222 TRANSISTOR MJE5742 MJE20 mje5740 2N2905 transistor 1N493
    Text: ON Semiconductor MJE5740 MJE5742 * NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high−voltage power switching in inductive circuits. They are particularly suited for operation in applications such as:


    Original     		PDF MJE5740 MJE5742 MJE5742 MJE5742 equivalent 2n222 TRANSISTOR MJE20 2N2905 transistor 1N493

    2n222 TRANSISTOR

    Abstract: 1N493 2N222 MJE5740 MJE5740G MJE5742 MJE5742G MR826
    Text: MJE5740, MJE5742 MJE5742 is a Preferred Device NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • Pb−Free Packages are Available*


    Original     		PDF MJE5740, MJE5742 MJE5742 MJE5740 MJE5740 MJE5740/D 2n222 TRANSISTOR 1N493 2N222 MJE5740G MJE5742G MR826

    MJE5740

    Abstract: transistor 2n222 2n222 TRANSISTOR 1N493 2N222 2N2905 MJE5742 MR826 OF 2n222
    Text: ON Semiconductor MJE5740 MJE5742 * NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high–voltage power switching in inductive circuits. They are particularly suited for operation in applications such as:


    Original     		PDF MJE5740 MJE5742 MJE5740 MJE5742 r14525 MJE5740/D transistor 2n222 2n222 TRANSISTOR 1N493 2N222 2N2905 MR826 OF 2n222

    transistor 2n222

    Abstract: MJE5742G MJE5740 1N493 2N222 MJE5740G MJE5742 MR826 of diode 2n222 1K68
    Text: MJE5740G, MJE5742G NPN Silicon Power Darlington Transistors The MJE5740G and MJE5742G Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant*


    Original     		PDF MJE5740G, MJE5742G MJE5740G MJE5742G MJE5740 MJE5742 MJE5740/D transistor 2n222 MJE5740 1N493 2N222 MJE5742 MR826 of diode 2n222 1K68

    2n222 TRANSISTOR

    Abstract: Ferroxcube core MR826 equivalent 1N493 transistor 2n222
    Text: MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant POWER DARLINGTON TRANSISTORS


    Original     		PDF MJB5742T4G MJB5742/D 2n222 TRANSISTOR Ferroxcube core MR826 equivalent 1N493 transistor 2n222

    1N493

    Abstract: transistor 2N222
    Text: MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant POWER DARLINGTON TRANSISTORS


    Original     		PDF MJB5742T4G MJB5742/D 1N493 transistor 2N222

    Untitled

    Abstract: No abstract text available
    Text: MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant POWER DARLINGTON TRANSISTORS


    Original     		PDF MJB5742T4G MJB5742/D

    MJE5742

    Abstract: 1N493 2N222 2N2905 MJE5740 MR826 Darlington transistor 2N2905 MJE5742 equivalent
    Text: MJE5740, MJE5742 MJE5742 is a Preferred Device NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • Pb−Free Packages are Available*


    Original     		PDF MJE5740, MJE5742 MJE5742 MJE5740 MJE5740 MJE5740/D 1N493 2N222 2N2905 MR826 Darlington transistor 2N2905 MJE5742 equivalent

    Untitled

    Abstract: No abstract text available
    Text: MJE5740G, MJE5742G NPN Silicon Power Darlington Transistors The MJE5740G and MJE5742G Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant*


    Original     		PDF MJE5740G, MJE5742G MJE5740G MJE5742G MJE5740 MJE5742 MJE5740/D

    2N2222L

    Abstract: 2n222 TRANSISTOR MJE5742 MR826 1N493 2N222 MJE5740 MJE5740G MJE5742G
    Text: MJE5740, MJE5742 MJE5742 is a Preferred Device NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • Pb−Free Packages are Available*


    Original     		PDF MJE5740, MJE5742 MJE5742 MJE5740 MJE5740 MJE5740/D 2N2222L 2n222 TRANSISTOR MR826 1N493 2N222 MJE5740G MJE5742G

    2n222 TRANSISTOR

    Abstract: transistor 2n222 of diode 2n222 1N493 mje5742g mje20 2n2905 time delay relay high voltage fast switching transistor for ignition coil drivers application Ferroxcube core 2N2905 transistor
    Text: MJE5740G, MJE5742G NPN Silicon Power Darlington Transistors The MJE5740G and MJE5742G Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant*


    Original     		PDF MJE5740G, MJE5742G MJE5740G MJE5740 MJE5742 MJE574xG O-220AB 2n222 TRANSISTOR transistor 2n222 of diode 2n222 1N493 mje20 2n2905 time delay relay high voltage fast switching transistor for ignition coil drivers application Ferroxcube core 2N2905 transistor

    2n222 TRANSISTOR

    Abstract: ignition coil npn power darlington MJE5742 transistor 2n222 2n222 1N493 MJE5740 MJE5740G MJE5742G MR826
    Text: MJE5740G, MJE5742G NPN Silicon Power Darlington Transistors The MJE5740G and MJE5742G Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant*


    Original     		PDF MJE5740G, MJE5742G MJE5740G MJE5742G MJE5740 MJE5742 MJE5740/D 2n222 TRANSISTOR ignition coil npn power darlington MJE5742 transistor 2n222 2n222 1N493 MJE5740 MR826

    2n222 TRANSISTOR

    Abstract: transistor 2n222 2n222 1N493 2N2905 MJE5740 MJE5742 MR826 of diode 2n222 MJE20
    Text: ON Semiconductort MJE5740 MJE5742 * NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high–voltage power switching in inductive circuits. They are particularly suited for operation in applications such as:


    Original     		PDF MJE5740 MJE5742 MJE5740 MJE5742 r14525 MJE5740/D 2n222 TRANSISTOR transistor 2n222 2n222 1N493 2N2905 MR826 of diode 2n222 MJE20

    design of 4-20mA transmitter for bridge type transducer using op-amp

    Abstract: "Current to Voltage Converter" 4-20ma using LM358 0-10v to 4-20ma LM341A eeg amplifier examples LOC111 4-20mA transmitter for a bridge type transducer using op-amp lm358 4-20mA bridge transducer 4-20mA transmitter using op-amp circuit diagram bridge transducer 4-20ma using op
    Text: APPLICATION NOTE AN-107 Linear Optocouplers AN-107 Introduction This application note describes isolation amplifier design principles for the LOC Series linear optocoupler devices. It describes the circuit operation in photoconductive and photovoltaic modes and provides some


    Original     		PDF AN-107 AN-107-R2 design of 4-20mA transmitter for bridge type transducer using op-amp "Current to Voltage Converter" 4-20ma using LM358 0-10v to 4-20ma LM341A eeg amplifier examples LOC111 4-20mA transmitter for a bridge type transducer using op-amp lm358 4-20mA bridge transducer 4-20mA transmitter using op-amp circuit diagram bridge transducer 4-20ma using op

    mosfet to ignition coil

    Abstract: 2n2369 avalanche cdi ignition ignition module capacitor, 100 microfarad and 35 volts Electronic car ignition circuit 6 volt coil ignition cdi ignition timing advance car cdi ignition advance ignition
    Text: APPLICATION NOTE 969 Economic, High Performance, High Efficiency Electronic Ignition with Avalanche-Rated HEXFETs HEXFET is a trademark of International Rectifier by Brian E. Taylor Introduction Gasoline engine ignition circuits represent a severe environment for


    OCR Scan     		PDF 00V/DIV AN966: AN-969 mosfet to ignition coil 2n2369 avalanche cdi ignition ignition module capacitor, 100 microfarad and 35 volts Electronic car ignition circuit 6 volt coil ignition cdi ignition timing advance car cdi ignition advance ignition

    ignition module

    Abstract: 2n2369 avalanche cdi ignition timing advance irf740 application note car cdi ignition cdi ignition ELECTRONIC CENTRIFUGAL SWITCH design of ignition and fuel system 800RPM cdi ignition circuit
    Text: APPLICATION NOTE 969 Economic, High Performance, High Efficiency Electronic Ignition with Avalanche-Rated HEXFETs HEXFET is a trademark o f International Rectifier by Brian E. Taylor Introduction Gasoline engine ignition circuits represent a severe environment for


    OCR Scan     		PDF AN966: AN-969 ignition module 2n2369 avalanche cdi ignition timing advance irf740 application note car cdi ignition cdi ignition ELECTRONIC CENTRIFUGAL SWITCH design of ignition and fuel system 800RPM cdi ignition circuit

    PNP Transistor 2N2222 equivalent

    Abstract: DIODE 1N3605 2N2907 equivalent equivalent transistor 2N2222 2n2222 npn transistor general purpose 1N3605 equivalent 2N2222 npn small signal current gain 2N2222 chip DIODE 1N9148 transistor npn high speed switching
    Text: SPECIAL SILICON PRODUCTS SILICON SIGNAL DIODE CHIPS Equivalent JEDEC Number GE Type 1N914 CHIP DRAWINGS Description Chip Dwg. 35.88 Designed for high-speed switching and general purpose applications. 1N914A Specification Sheet No. 1 35.90 1N914B M46P-X510


    OCR Scan     		PDF 1N914 1N914A 1N914B M46P-X510 1N3064 M46P-X507 1N3600 1N3605 M46P-X516 1N4150 PNP Transistor 2N2222 equivalent DIODE 1N3605 2N2907 equivalent equivalent transistor 2N2222 2n2222 npn transistor general purpose 1N3605 equivalent 2N2222 npn small signal current gain 2N2222 chip DIODE 1N9148 transistor npn high speed switching

    diode D07-15

    Abstract: diode d07 1N3605 DIODE 1N4087 1N9148 2N2222 chip 1N4532 1N814 D07 15 DIODE 1N3605
    Text: SILICON SIGNAL DIODES 100 MA TYPFS SPECIAL SILICON PRODUCTS SILICON SIGNAL DIODE CHIPS Equivalent JEDEC Number GE Type 1N914 CHIP DRAWINGS Description Chip Dwg. 35.88 Designed for high-speed switching and general purpose applications. 1N914A Specification


    OCR Scan     		PDF 1N251 1N252 1N461 1N625 1N62G 1N814 1N903 1N903A 1N904 1N914 diode D07-15 diode d07 1N3605 DIODE 1N4087 1N9148 2N2222 chip 1N4532 D07 15 DIODE 1N3605

    transistor bd320c

    Abstract: BD320C BD320B BD323B 2N2102 2N3262 2N4036 BCY65E BCY77 BFX84
    Text: NPN SWITCHING T A B LE 3 NPN SILICON PLANAR M ED IUM AND HIGH S P E E D SWITCHING T R A N S IS T O R S The devices show n in this table are characterised for general medium voltage, medium and high speed switching applications in Commercial, Industrial and M ilitary equipments.


    OCR Scan     		PDF 2N3262 BD320C BD321A BD321B BD321C BD322A BD322B BD322C BD323A BD323B transistor bd320c BD320B 2N2102 2N4036 BCY65E BCY77 BFX84