2SB1178
Abstract: 2SB1178A 2SD1748 2SD1748A
Text: Power Transistors 2SD1748, 2SD1748A Silicon NPN triple diffusion planar type Darlington Unit: mm For low-freauency power amplification Complementary to 2SB1178 and 2SB1178A 7.0±0.3 3.5±0.2 M Di ain sc te on na tin nc ue e/ d • Features 0.8±0.2 7.2±0.3
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2SD1748,
2SD1748A
2SB1178
2SB1178A
2SD1748
2SB1178A
2SD1748
2SD1748A
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DN8695
Abstract: HZIP023-P-0138
Text: DN8695 9-circuit Darlington Driver Array High Breakdown Voltage : 50V, Large Drive Current : 1.5A Unit : mm (12.33) 11.3±0.25 8.2±0.3 ø3.6 M Di ain sc te on na tin nc ue e/ d • Overview 1.27 1.8±0.25 3.5±0.3 • Driving of the printer motors, etc.
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DN8695
DN8695
HZIP023-P-0138
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD2209 Silicon NPN triple diffusion planar type Darlington Unit: mm 7.0±0.3 For power amplification and switching 3.5±0.2 7.2±0.3 0.8±0.2 3.0±0.2 • Features 0.85±0.1 10.0 –0. ● +0.3 M Di ain sc te on na tin nc ue e/ d 1.0±0.2
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2SD2209
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2SB1493
Abstract: 2SD2255
Text: Power Transistors 2SB1493 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2255 M Di ain sc te on na tin nc ue e/ d Unit: mm 4.0±0.1 4.0±0.1 10.5±0.5 2.0±0.1 15.0±0.2 20.0±0.3 19.0±0.3 φ3.2±0.1 3.5 16.2±0.5
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2SB1493
2SD2255
2SB1493
2SD2255
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2SB1493
Abstract: 2SD2255
Text: Power Transistors 2SD2255 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1493 M Di ain sc te on na tin nc ue e/ d Unit: mm 15.0±0.5 4.0±0.1 4.0±0.1 2.0±0.1 15.0±0.2 20.0±0.3 19.0±0.3 φ3.2±0.1 3.5 ●
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2SD2255
2SB1493
2SB1493
2SD2255
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2SB1253
Abstract: 2SB1253 equivalent 2SD1893
Text: Power Transistors 2SB1253 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1893 M Di ain sc te on na tin nc ue e/ d Unit: mm ● 0.7 • Absolute Maximum Ratings TC=25˚C Symbol Ratings Unit –130 V –110 V Collector to base voltage
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2SB1253
2SD1893
2SB1253
2SB1253 equivalent
2SD1893
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2SB1253
Abstract: 2SD1893
Text: Power Transistors 2SD1893 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1253 M Di ain sc te on na tin nc ue e/ d Unit: mm ● 0.7 • Absolute Maximum Ratings TC=25˚C Symbol Ratings Unit 130 V 110 V Collector to base voltage
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2SD1893
2SB1253
2SB1253
2SD1893
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2SD2209
Abstract: No abstract text available
Text: Power Transistors 2SD2209 Silicon NPN triple diffusion planar type Darlington Unit: mm 7.0±0.3 For power amplification and switching 3.5±0.2 M Di ain sc te on na tin nc ue e/ d 7.2±0.3 0.8±0.2 3.0±0.2 • Features +0.3 1.0±0.2 0.85±0.1 0.4±0.1 10.0 –0.
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2SD2209
2SD2209
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2SB1531
Abstract: 2SD2340 2sb15
Text: Power Transistors 2SB1531 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2340 Unit: mm M Di ain sc te on na tin nc ue e/ d 15.0±0.5 4.0±0.1 4.0±0.1 2.0±0.1 15.0±0.2 20.0±0.3 19.0±0.3 φ3.2±0.1 3.5 ● Optimum for 40W HiFi output
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2SB1531
2SD2340
2SB1531
2SD2340
2sb15
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FZT600
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT600 ISSUE 2 -FEBRUARY 1995- - m FEATURES * 2 A c o n tin u o u s c u rre n t * 140 VO LT VCE0 * G uara n te e d h FE S p e cifie d up to 1A
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OT223
FZT600
100mA
100oC
20MHz
300fis.
FZT600
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S0T223
Abstract: FZT600A FZT600B FZT600
Text: S 0 T 2 2 3 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT600 FEATURES: * 2 W POWER DISSIPATION * 2 A CO N TIN U O U S lc * 4 A PEAK lc * GUARANTEED HFE SPECIFIED UP TO 1A PAR TM AR KIN G D ETAIL - FZ T 6 00 ABSOLUTE MAXIMUM RATINGS PARAM ETER SYMBOL
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S0T223
FZT600
300ms
FZT600A
FZT600B
100mA,
20MHz
n70S7fl
DS249
FZT600
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FZT705
Abstract: No abstract text available
Text: FZT705 SOT223 PIMP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FEATURES * 2W POWER DISSIPATION. * 2A C O N TIN U O U S lc. * 4A PEAK lc. * GUARANTEED H fe SPECIFIED UP TO 2A. * COMPLEM ENTARY T Y P E -F Z T 6 0 5 PARTMARKING DETAIL - FZT705 ABSOLUTE M A XIM U M RATINGS
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OT223
TYPE-FZT605
FZT705
-100tiA
300ns.
DS278
100mA
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FCX604
Abstract: No abstract text available
Text: SOT89 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FCX604 FEATURES: * 1A CO N TIN U O U S COLLECTOR CURRENT * 1 .5 W POWER DISSIPATION * GUARANTEED HFE SPEC IFIED UP T O 2 A * F A S T S W IT C H IN G P A R T M A R K IN G D E T A IL - 6 0 4 ABSOLUTE MAXIMUM RATINGS
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FCX604
100/iA
500mA,
100mA,
20MHz
DS147
FCX604
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PDF
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Untitled
Abstract: No abstract text available
Text: ZTX600 ZTX601 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 2 -JU N E 94_ FEATURES * 160 V o lt VCE0 * 1 A m p c o n tin u o u s c u rre n t * G ain o f 5K a t lc=1 A m p * Ptot= 1 W a tt c . f E-Line
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ZTX600
ZTX601
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Untitled
Abstract: No abstract text available
Text: NPN Silicon Planar Medium Power Darlington Transistors ZTX 602 Z TX 603 FEATURES • • • • • 1 .5 W p o w e r d issipation 1A co n tin u o u s co lle cto r cu rre n t 4 A peak co lle cto r cu rre n t G uaranteed hFE specified up to 2 A Fast sw itc h in g
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ZTX602
ZTX603
ZTX603
SE105
SE107
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SE153
Abstract: se150 SE-150 se151 SE154
Text: PNP Silicon Planar Medium Power Darlington Transistor ZTX704 ZTX705 FEATURES • • • • • 1 ,5 W p ow er dissipation 1 A co n tin u o u s collector current 4 A peak collector current Guaranteed h FE specified up to 2 A Fast sw itc h in g D E S C R IP T IO N
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ZTX704
ZTX705
300fiS.
SE150
ZTX704/ZTX705
SE151
SE152
SE153
SE153
se150
SE-150
se151
SE154
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FT5758M
Abstract: FT5755M FT5755 ft5755m DARLINGTON TRANSISTOR ARRAY
Text: Januar/ 1990 Edition 1.1 FUJITSU PRODUCT PROFILE . FT5755M, FT5758M Silicon Darlington Transistor Array ABSOLUTE M AXIM UM RATINGS Ta = 2 5 ° C I R a tin g S ym bol S to ra g e T e m p e ra tu re T«g J u n c tio n T e m p e ra tu re T¡ C o n d itio n U n it
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FT5755M,
FT5758M
FT5758M
FT5755M
FT5755
ft5755m DARLINGTON TRANSISTOR ARRAY
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KSD985
Abstract: KSD986
Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTO R KSD985/986 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SW ITCHING INDUSTRIAL USE A BSOLUTE M AXIMUM RATINGS C h a r a c te r is tic Sym bol R a tin g U n it C o l le c to r-B a s e V o lta g e VcEO 150 V C o lle c to r-E m itte r V o lta g e : K S D 9 8 5
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KSD985/986
KSD985
KSD986
300ns,
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ZTX 15
Abstract: ZTX 100
Text: PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ZTX704 ZTX705 ISSUE 3 -M A Y 94 * 120 V o lt V CE0 * 1 A m p c o n tin u o u s c u rre n t * G a in o f 3 K a t lc=1 A m p * Pt01=1 W a tt A P P L IC A T IO N S * L a m p , s o le n o id an d re la y d riv e rs
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ZTX704
ZTX705
ZTX 15
ZTX 100
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Untitled
Abstract: No abstract text available
Text: PNP EPITAXIAL TIP115/116/117 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • Complementary to TIP110/111/112
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TIP115/116/117
TIP110/111/112
TIP115
TIP116
TIP117
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TIP115
Abstract: TIP117 TIP116 2A 80v complementary transistor 60V transistor npn 2a
Text: PNP EPITAXIAL TIP115/116/117 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to T IP 1 10/111/112
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TIP115/116/117
TIP110/111/112
O-220
TIP115
TIP116
TIP117
Temperatu-10V,
TIP117
TIP116
2A 80v complementary transistor
60V transistor npn 2a
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tektronix type 576 curve tracer
Abstract: tektronix 576 curve tracer Tracer 176 MR756 2n4401 die DIODO 4001 real time application of ASTABLE mode AN915 MOTOROLA line frequency diode AN915
Text: AN915 MOTOROLA Semiconductor Products Inc. Application Note CHARACTERIZING COLLECTOR-TO-EMITTER AND DRAIN-TO-SOURCE DIODES FOR SWITCHMODE APPLICATIONS Prepared by Al Pshaenich Motorola Inc., Semiconductor Group Phoenix, Arizona ABSTRACT Most power Darlington transistors and power MOSFETs con
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AN915
AN915/D
AN915/D
tektronix type 576 curve tracer
tektronix 576 curve tracer
Tracer 176
MR756
2n4401 die
DIODO 4001
real time application of ASTABLE mode
AN915 MOTOROLA
line frequency diode
AN915
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ULN2003NA
Abstract: transistor af 178 ms4581p 8ch pnp DARLINGTON TRANSISTOR ARRAY DARLINGTON 3A 100V npn array pnp darlington array ULN ULN2004NA 54566P pnp transistor array uln TD62981P
Text: [1] INDEX 1. IFD Family Tree [ 1 ] INDEX 1. IFD Family Tree [i]n t e r -@a c e g n v e r — Transistor-Array — Monolithic Bipolar Series Array Series |T r a n s i s t o r | [ A r r a y ] |DM O S| T r a n s i s t o r |A r r a y | — Multi-Chip — Module
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TD62M
TD62C
TD/TB62
N29B3a
54S63PA
54597p
54598PÜ
2786A
UDN2580a
ULN2003NA
transistor af 178
ms4581p
8ch pnp DARLINGTON TRANSISTOR ARRAY
DARLINGTON 3A 100V npn array
pnp darlington array ULN
ULN2004NA
54566P
pnp transistor array uln
TD62981P
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Untitled
Abstract: No abstract text available
Text: TRANSISTOR MODULE SQP200A40/60 UL;E76102 M S Q D 2 0 0 A is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for
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SQP200A40/60
E76102
400/600V
CI022aS
SQD200A
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