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    DARLINGTON 6A Search Results

    DARLINGTON 6A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ULS2003H/R Rochester Electronics LLC ULS2003 - High Voltage High Current Darlington Array Visit Rochester Electronics LLC Buy
    ULS2022R/B Rochester Electronics LLC ULS2022 - High Voltage High Current Darlington Array Visit Rochester Electronics LLC Buy
    PS2502L-1-A Renesas Electronics Corporation DC Input Darlington, , / Visit Renesas Electronics Corporation
    PS2502L-4-A Renesas Electronics Corporation DC Input Darlington, , / Visit Renesas Electronics Corporation
    PS2502-4-A Renesas Electronics Corporation DC Input Darlington, , / Visit Renesas Electronics Corporation

    DARLINGTON 6A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1674

    Abstract: 2SD2615
    Text: 2SD2615 Transistors For Motor / Relay drive 120V, 6A 2SD2615 zStructure NPN Silicon Epitaxial Planar Transistor (Darlington connection) zExternal dimensions (Unit : mm) TO-220FN 4.5 φ3.2 2.8 8.0 15.0 1.2 1.3 14.0 5.0 zFeatures 1) Darlington connection , high hFE.


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    PDF 2SD2615 O-220FN 2SB1674 2SB1674 2SD2615

    MJE5740

    Abstract: transistor 2n222 2n222 TRANSISTOR 1N493 2N222 2N2905 MJE5742 MR826 OF 2n222
    Text: ON Semiconductor MJE5740 MJE5742 * NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high–voltage power switching in inductive circuits. They are particularly suited for operation in applications such as:


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    PDF MJE5740 MJE5742 MJE5740 MJE5742 r14525 MJE5740/D transistor 2n222 2n222 TRANSISTOR 1N493 2N222 2N2905 MR826 OF 2n222

    ITC117P

    Abstract: No abstract text available
    Text: ITC117P Integrated Telecom Circuits INTEGRATED CIRCUITS DIVISION Parameter Relay Load Voltage Relay Load Current Relay On-Resistance max Bridge Rectifier Reverse Voltage Darlington Collector Current Darlington Current Gain Rating 350 120 15 100 120 10,000


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    PDF ITC117P 16-pin ITC117â 3750Vrms DS-ITC117P ITC117P

    MJE5742 equivalent

    Abstract: 2n222 TRANSISTOR MJE5742 MJE20 mje5740 2N2905 transistor 1N493
    Text: ON Semiconductor MJE5740 MJE5742 * NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high−voltage power switching in inductive circuits. They are particularly suited for operation in applications such as:


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    PDF MJE5740 MJE5742 MJE5742 MJE5742 equivalent 2n222 TRANSISTOR MJE20 2N2905 transistor 1N493

    2n222 TRANSISTOR

    Abstract: transistor 2n222 2n222 1N493 2N2905 MJE5740 MJE5742 MR826 of diode 2n222 MJE20
    Text: ON Semiconductort MJE5740 MJE5742 * NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high–voltage power switching in inductive circuits. They are particularly suited for operation in applications such as:


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    PDF MJE5740 MJE5742 MJE5740 MJE5742 r14525 MJE5740/D 2n222 TRANSISTOR transistor 2n222 2n222 1N493 2N2905 MR826 of diode 2n222 MJE20

    2N6059

    Abstract: No abstract text available
    Text: 1165895 Silicon NPN power darlington transistor. Features: • • • • • High gain. NPN darlington. High current. High dissipation. Integrated antiparallel collector-emitter diode. Applications: Linear and switching industrial equipment. TO-3 Description:


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    PDF 2N6059

    transistor w16

    Abstract: No abstract text available
    Text: ITC117P Integrated Telecom Circuits INTEGRATED CIRCUITS DIVISION Parameter Relay Load Voltage Relay Load Current Relay On-Resistance max Bridge Rectifier Reverse Voltage Darlington Collector Current Darlington Current Gain Rating 350 120 15 100 120 10,000


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    PDF ITC117P 16-pin ITC117 E76270 DS-ITC117P-R06 transistor w16

    2N6667

    Abstract: 2N6668
    Text: ON Semiconductor 2N6667 2N6668 Darlington Silicon Power Transistors . . . designed for general−purpose amplifier and low speed switching applications. PNP SILICON DARLINGTON POWER TRANSISTORS 10 AMPERES 60 −80 VOLTS 65 WATTS • High DC Current Gain —


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    PDF 2N6667 2N6668 2N6667 2N6668 O-220AB 2N6387, 2N6388 21A-09 O-220AB

    20000 watt schematics power amp

    Abstract: 2N6667 1N5825 2N6387 2N6388 2N6668 MSD6100
    Text: ON Semiconductort 2N6667 2N6668 Darlington Silicon Power Transistors . . . designed for general–purpose amplifier and low speed switching applications. PNP SILICON DARLINGTON POWER TRANSISTORS 10 AMPERES 60–80 VOLTS 65 WATTS • High DC Current Gain —


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    PDF 2N6667 2N6668 220AB 2N6387, 2N6388 220AB r14525 2N6667/D 20000 watt schematics power amp 2N6667 1N5825 2N6387 2N6388 2N6668 MSD6100

    NTE247

    Abstract: nte248
    Text: NTE247 NPN & NTE248 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE247 (NPN) and NTE248 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications.


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    PDF NTE247 NTE248 100mA NTE247 nte248

    2N6668

    Abstract: 2N6667 1N5825 2N6387 2N6388 MSD6100
    Text: ON Semiconductor 2N6667 2N6668 Darlington Silicon Power Transistors . . . designed for general–purpose amplifier and low speed switching applications. PNP SILICON DARLINGTON POWER TRANSISTORS 10 AMPERES 60–80 VOLTS 65 WATTS • High DC Current Gain —


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    PDF 2N6667 2N6668 220AB 2N6387, 2N6388 r14525 2N6667/D 2N6668 2N6667 1N5825 2N6387 2N6388 MSD6100

    QCA30B60

    Abstract: QCA30A60 qca30a QCA30B40 QCB30A40 QCB30A60 c2e1
    Text: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 (M) QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. 94max


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    PDF QCA30B/QCB30A40/60 E76102 QCA30B QCB30A 94max 110TAB 32max 31max 35max QCA30B60 QCA30A60 qca30a QCA30B40 QCB30A40 QCB30A60 c2e1

    2SB1674

    Abstract: 2SD2615
    Text: 2SB1674 Transistors For Motor / Relay drive −120V, −6A 2SB1674 zStructure PNP Silicon Epitaxial Planar Transistor (Darlington connection) zExternal dimensions (Unit : mm) TO-220FN 4.5 φ3.2 2.8 8.0 15.0 1.2 1.3 14.0 5.0 zFeatures 1) Darlington connection, high hFE.


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    PDF 2SB1674 -120V, O-220FN 2SD2615 -120ipment 2SB1674 2SD2615

    E2 diode

    Abstract: Diode B2x
    Text: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 (M) QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. C2E1


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    PDF QCA30B/QCB30A40/60 E76102 QCA30B QCB30A 110TAB 94max 32max 31max 35max 400/600V E2 diode Diode B2x

    Darlington 30A

    Abstract: QCA30B60 30A high speed diode QCA30B40 QCB30A40 QCB30A60
    Text: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 M QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. IC 30A, VCEX 400/600V


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    PDF QCA30B/QCB30A40/60 E76102 QCA30B QCB30A 400/600V QCA30B40 QCA30B60 QCB30A40 QCB30A60 QCA30B40 Darlington 30A QCA30B60 30A high speed diode QCB30A60

    QCA150AA100

    Abstract: QCA150AA120 24TRANSISTOR E76102
    Text: TRANSISTOR MODULE QCA150AA100 UL;E76102 M QCA150AA100 is a dual Darlington power transistor module which has seriesconnected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated


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    PDF QCA150AA100 E76102 QCA150AA100 QCA150AA120 QCA150AA120 24TRANSISTOR

    MC7812Ck

    Abstract: MC7805CK MC7815CK MC7824CK MC7808CK MC7806CK LM7805k LM7805KC MC7815CK TO3 LM7812KC
    Text: • High power, high gain Darlington transistors • VcEO 40V, 60V, 80V, 100V PMD 10K,11K,12K,13K, 16K,17K Darlington transistors CASE TEM PERATURE Tc 75°C • The only glass passivated 200°C operating junction tem perature Darlington power transistor range


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    PDF PMD10K 16amps, PMD-13 PMD-11 PMD-17 MC7812Ck MC7805CK MC7815CK MC7824CK MC7808CK MC7806CK LM7805k LM7805KC MC7815CK TO3 LM7812KC

    NPN Transistor 2N3055 darlington

    Abstract: lambda LAS PMD 1000 stc transistors series 2N3055 4D ic 810 2N3055 series voltage regulator 2N3055 PMD12K40 2N3055-2
    Text: • High power, high gain Darlington transistors • VcEO 40V, 60V, 80V, 100V PMD 10K,11K,12K,13K, 16K,17K Darlington transistors CASE T E M P E R A T U R E T c 75°C • The only glass passivated 200°C operating junction tem perature Darlington power transistor range


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    PDF PMD10K 16amps, PMD-13 PMD-11 PMD-17 NPN Transistor 2N3055 darlington lambda LAS PMD 1000 stc transistors series 2N3055 4D ic 810 2N3055 series voltage regulator 2N3055 PMD12K40 2N3055-2

    Untitled

    Abstract: No abstract text available
    Text: i*imi ra@iû gs SCS-THOMSON 2N6059 SILICON NPN POWER DARLINGTON TRANSISTOR . . . . . . SGS-THOMSON PREFERRED SALESTYPE HIGH GAIN NPN DARLINGTON HIGH CURRENT HIGH DISSIPATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS . LINEAR AND SWITCHING INDUSTRIAL


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    PDF 2N6059 2N6059

    Untitled

    Abstract: No abstract text available
    Text: KSE5740/5741/5742 NPN SILICON DARLINGTON TRANSISTOR HIGH VOLTAGE POWER DARLINGTON TR HIGH VOLTAGE POWER SWITCHING IN INDUCTIVE CIRCUITS • Small Engine Ignition • Switching Regulators • Inverters • Solenoid and Relay Drivers • Motor Control ABSOLUTE MAXIMUM RATINGS


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    PDF KSE5740/5741/5742 KSE5740 KSE5741 KSE5742

    BDV64

    Abstract: philips BDV64A bdv64b transistor transistors BDV64B bdv64s BDV64B BDV65 BDV64 C
    Text: f BDV64; 64A ; 64C PHILIPS INTERNATIONAL 5bE J> m 711002b 0G43342 3Tb • PHIN T - 3 3 -3 1 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general


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    PDF BDV64; BDV64B; 711002b T-33-3! BDV65, BDV64 7Z7749I- philips BDV64A bdv64b transistor transistors BDV64B bdv64s BDV64B BDV65 BDV64 C

    TCI ignition

    Abstract: ignition tci KSE5740/5741/5742
    Text: KSE5740/5741/5742 NPN SILICON DARLINGTON TRANSISTOR HIGH VOLTAGE POWER DARLINGTON TR HIGH VOLTAGE POWER SWITCHING IN INDUCTIVE CIRCUITS • • • • • Sm all Engine Ignition Switching Regulators Inverters Solenoid and Relay Drivers Motor Control ABSOLUTE MAXIMUM RATINGS


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    PDF KSE5740/5741/5742 KSE5740 KSE5741 KSE5742 TCI ignition ignition tci KSE5740/5741/5742

    KD621230

    Abstract: D1220 300 volt 5 ampere transistor a 31 diode oas transistors d100
    Text: m V E R E X KD621230 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Darlington Transistor Module 300 Amperes/1200 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use


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    PDF KD621230 Amperes/1200 D-100 KD621230 D1220 300 volt 5 ampere transistor a 31 diode oas transistors d100

    KS621K30

    Abstract: transistor S56 transistor s55 lem lc 300 KS621 powerex ks62 transistor VCEO 1000V
    Text: POWBÌEX KS621K30 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Single Darlington Transistor Module 300 Amperes/1000 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power devices designed for use in


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    PDF KS621K30 Amperes/1000 KS621K30 transistor S56 transistor s55 lem lc 300 KS621 powerex ks62 transistor VCEO 1000V