MPSA65
Abstract: CBVK741B019 F63TNR MMBTA65 MPSA64 PN2222N PZTA65 bel 188 transistor
Text: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*
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MMBTA65
PZTA65
OT-23
OT-223
MPSA64
OT-223
MPSA65
CBVK741B019
F63TNR
MMBTA65
PN2222N
PZTA65
bel 188 transistor
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transistor 2N5461
Abstract: No abstract text available
Text: MMBF5460 MMBF5461 2N5460 2N5461 2N5462 G D G S TO-92 SOT-23 S Mark: 6E / 61U D P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.
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2N5460
2N5461
2N5462
MMBF5460
MMBF5461
2N5462
transistor 2N5461
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PART NUMBER MARKING SC70-6
Abstract: pin configuration NPN transistor 2N3904 MARKING CODE 21 SC70
Text: FFB3946 FFB3946 E2 B2 C1 Package: SC70-6 Device Marking: .AB Note: The " . " dot signifies Pin 1 C2 B1 Transistor 1 is NPN device, Transistor 2 is PNP device. E1 NPN & PNP General Purpose Amplifier SC70-6 Surface Mount Package ThIs dual complementary device was designed for use as a general purpose amplifier and switching
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FFB3946
SC70-6
2N3904
2N3906
PART NUMBER MARKING SC70-6
pin configuration NPN transistor 2N3904
MARKING CODE 21 SC70
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Untitled
Abstract: No abstract text available
Text: FDN339AN N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for
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FDN339AN
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Untitled
Abstract: No abstract text available
Text: FDC6327C Dual N & P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N & P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate
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FDC6327C
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Untitled
Abstract: No abstract text available
Text: FDC5612 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 4.3 A, 60 V. RDS ON = 0.055 W
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FDC5612
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Untitled
Abstract: No abstract text available
Text: November 1998 FDG6301N Dual N-Channel, Digital FET General Description Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to
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FDG6301N
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SSOT-6
Abstract: CBVK741B019 F63TNR FDC602P FDC633N 55A4 V1527
Text: FDC602P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage
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FDC602P
SSOT-6
CBVK741B019
F63TNR
FDC602P
FDC633N
55A4
V1527
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fdn5618p
Abstract: No abstract text available
Text: FDN5618P 60V P-Channel Logic Level PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • –1.25 A, –60 V. RDS ON = 0.170 Ω @ VGS = –10 V
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FDN5618P
fdn5618p
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P-Channel MOSFET code L1A S
Abstract: CBVK741B019 F63TNR FDC6324L FDC633N SOIC-16 in20v
Text: March 1999 FDC6324L Integrated Load Switch General Description Features These Integrated Load Switches are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state
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FDC6324L
P-Channel MOSFET code L1A S
CBVK741B019
F63TNR
FDC6324L
FDC633N
SOIC-16
in20v
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CBVK741B019
Abstract: F63TNR FDG6302P FFB3906 FMB3906 MMPQ3906 SC70-6 SOIC-16 4977 gm
Text: E2 MMPQ3906 C2 B2 E1 C1 C1 E1 C2 SC70-6 Mark: .2A B2 E3 E4 B4 B2 B1 pin #1 B1 E2 B3 E2 E1 pin #1 B1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device.
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MMPQ3906
SC70-6
SOIC-16
FFB3906
FMB3906
FMB3906
FFB3906
CBVK741B019
F63TNR
FDG6302P
MMPQ3906
SC70-6
SOIC-16
4977 gm
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FDC6331L
Abstract: SSOT-6 ZENER SINGLE COLOR CODE FDC633N 125OC AN1030 CBVK741B019 F63TNR
Text: FDC6331L Integrated Load Switch Features General Description • –2.8 A, –8 V. RDS ON = 55 mΩ @ V GS = –4.5 V RDS(ON) = 70 mΩ @ V GS = –2.5 V RDS(ON) = 100 mΩ @ V GS = –1.8 V This device is particularly suited for compact power management in portable electronic equipment where
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FDC6331L
FDC6331L
SSOT-6
ZENER SINGLE COLOR CODE
FDC633N
125OC
AN1030
CBVK741B019
F63TNR
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sod123 diode
Abstract: MARKING CODE diode sod123 W1 sod mark code e2 SOD123 MARKING CODE CBVK741B019 F63TNR MMSZ5221B MMSZ5233B
Text: MMSZ5233B DISCRETE POWER AND SIGNAL TECHNOLOGIES 5% TOLERANCE General Description: Features: Half watt, General purpose, Medium Current Surface Mount Zener in the SOD-123 package. The SOD-123 package has the same footprint as the glass mini-melf LL-34 package &
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MMSZ5233B
OD-123
LL-34)
sod123 diode
MARKING CODE diode sod123 W1
sod mark code e2
SOD123 MARKING CODE
CBVK741B019
F63TNR
MMSZ5221B
MMSZ5233B
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Marking Code m sc70-6
Abstract: PART NUMBER MARKING SC70-6 FDG6331L 125OC AN1030 CBVK741B019 F63TNR FDG6302P SC70-6
Text: FDG6331L Integrated Load Switch General Description Features This device is particularly suited for compact power management in portable electronic equipment where 2.5V to 8V input and 0.8A output current capability are needed. This load switch integrates a small N-Channel
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FDG6331L
SC70-6
SC70-6opment.
Marking Code m sc70-6
PART NUMBER MARKING SC70-6
FDG6331L
125OC
AN1030
CBVK741B019
F63TNR
FDG6302P
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diode sod123 W1
Abstract: CBVK741B019 F63TNR MMSZ5221B sod123 E2
Text: SOD-123 Tape and Reel Data SOD123 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOD123 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated
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OD-123
OD123
177cm
330cm
diode sod123 W1
CBVK741B019
F63TNR
MMSZ5221B
sod123 E2
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rf transistor mark code H1
Abstract: CBVK741B019 F63TNR MMBTH24 MPSH11 MPSH24 PN2222N
Text: MPSH24 / MMBTH24 MPSH24 MMBTH24 C E C B TO-92 B SOT-23 E Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 20 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for
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MPSH24
MMBTH24
MPSH24
OT-23
MPSH11
rf transistor mark code H1
CBVK741B019
F63TNR
MMBTH24
MPSH11
PN2222N
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SSOT-3
Abstract: CBVK741B019 F63TNR FSB649 MMSZ5221B SuperSOTTM -3
Text: FSB649 FSB649 C E B SuperSOTTM-3 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Sourced from Process NC. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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FSB649
SSOT-3
CBVK741B019
F63TNR
FSB649
MMSZ5221B
SuperSOTTM -3
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SC70-6 SSOT6
Abstract: SSOT-6 .318 SC70-6 ic 311 pdf datasheets CBVK741B019 F63TNR FDG6302P FFB2222A FFB2227A FFB2907A
Text: E2 B2 C2 TRANSISTOR TYPE C1 C1 B1 E1 NPN C2 B2 E2 PNP E1 C1 C2 SC70-6 Mark: .AA FFB2227A / FMB2227A FMB2227A FFB2227A B2 B1 pin #1 E1 SuperSOT-6 Dot denotes pin #1 E2 pin #1 B1 Mark: .001 Dot denotes pin #1 NPN & PNP General Purpose Amplifier This complementary device is for use as a medium power amplifier and
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SC70-6
FFB2227A
FMB2227A
FFB2227A
FFB2222A
FFB2907A
SC70-6 SSOT6
SSOT-6
.318 SC70-6
ic 311 pdf datasheets
CBVK741B019
F63TNR
FDG6302P
FFB2222A
FFB2907A
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CBVK741B019
Abstract: F63TNR FDC3512 FDC633N
Text: FDC3512 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDC3512
CBVK741B019
F63TNR
FDC3512
FDC633N
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CBVK741B019
Abstract: F63TNR FDG6302P FDG6308P SC70-6 marking code 04 sc70-6
Text: FDG6308P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –0.6 A, –20 V.
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FDG6308P
SC70-6
SC70-6
CBVK741B019
F63TNR
FDG6302P
FDG6308P
marking code 04 sc70-6
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Untitled
Abstract: No abstract text available
Text: Si3445DV P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –5.5 A, –20 V.
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Si3445DV
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Untitled
Abstract: No abstract text available
Text: BAS35 BAS35 Connection Diagrams 3 3 3 1405 29 2 SOT-23 1 1 2 2 1 General Purpose High Voltage Diode Sourced from Process 1H. See MMBD1401 for characteristics. Absolute Maximum Ratings* Symbol W IV TA = 25°C unless otherwise noted Parameter Working Inverse Voltage
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BAS35
OT-23
MMBD1401
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MPS A06 transistor
Abstract: MPS A06 MPSA06 "cross reference" mps 0724 marking A06 amplifier FAIRCHILD SOT-223 MARK Marking code mps
Text: MMBTA06 PZTA06 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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MPSA06
MMBTA06
PZTA06
MPSA06
MMBTA06
OT-23
OT-223
MPSA06RA
O-92-3
MPS A06 transistor
MPS A06
MPSA06 "cross reference"
mps 0724
marking A06 amplifier
FAIRCHILD SOT-223 MARK
Marking code mps
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Untitled
Abstract: No abstract text available
Text: =M l C O N D U C T O R tm FDC6306P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize
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FDC6306P
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