40N120
Abstract: IXRH 50N120 40N120 DATASHEET 50N120 bi-directional switches IGBT induction heating D-68623
Text: IXRH 40N120 Advanced Technical Information VCES = 1200 V IC25 = 55 A VCE sat = 2.2 V IGBT with Reverse Blocking capability C TO-247 AD G C E G E G = Gate, E = Emitter, C = Collector, TAB = Collector Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings
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40N120
O-247
40N120
IXRH 50N120
40N120 DATASHEET
50N120
bi-directional switches IGBT
induction heating
D-68623
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35N120D1
Abstract: D-68623 IXER 35N120D1
Text: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.2 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C
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35N120D1
247TM
E153432
35N120D1
D-68623
IXER 35N120D1
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35N100U1
Abstract: irm 38 D-68623 ixsn35n100u1
Text: IGBT with Diode IXSN 35N100U1 VCES IC25 VCE sat = 1000 V = 38 A = 3.5 V High Short Circuit SOA Capability 3 2 4 Symbol Test Conditions V CES TJ = 25°C to 150°C 1 Maximum Ratings 1000 V CGR TJ = 25°C to 150°C; RGE = 1 MΩ V GES V GEM A Continuous ±20
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35N100U1
OT-227
50/orporation
D-68623
35N100U1
irm 38
ixsn35n100u1
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HTZ240F10K
Abstract: D-68623 HTZ240F12K HTZ240F14K HTZ240F16K
Text: HTZ240F Series LARONTROL High Voltage Diode Rectifier Module IF AV = 1.7 A VRRM = 16000 V Type Number Repetitive Peak Minimum Avalanche Voltage V(BR)R HTZ240F16K HTZ240F14K HTZ240F12K HTZ240F10K 16000 14000 12000 10000 17000 15000 13000 11000 CIRCUIT DIAGRAM
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HTZ240F
HTZ240F16K
HTZ240F14K
HTZ240F12K
HTZ240F10K
D-68623
HTZ240F10K
HTZ240F12K
HTZ240F14K
HTZ240F16K
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36N60
Abstract: 32N60 IXFN SOT227 fast diode SOT-227 D-68623
Text: IXFK 32N60 IXFK 36N60 IXFN 32N60 IXFN 36N60 Preliminary Data VDSS HiPerFETTM Power MOSFET ID25 RDS on t rr IXFK/FN 36N60 600V 36A IXFK/FN 32N60 600V 32A 0.18Ω 0.25Ω 250ns 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK)
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32N60
36N60
36N60
32N60
250ns
O-264
IXFN SOT227
fast diode SOT-227
D-68623
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D-68623
Abstract: No abstract text available
Text: VWI 6-12P1 IC25 IGBT Module VCES VCE sat typ. Sixpack in ECO-PAC 2 S9 Preliminary data L9 N5 =6A = 1200 V = 3.9 V K 12 N9 R5 NTC X 18 W 14 J 13 A5 D5 H5 A1 F3 C1 K 10 G1 Pin arrangement see outlines Features IGBTs Conditions Maximum Ratings VCES TVJ = 25°C to 150°C
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6-12P1
B25/50
D-68623
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IXDD408PI
Abstract: IXDD408 Ultrafast MOSFET Driver 2N7000 IXDD480 VM0580-02F IC TTL 4700 cd4049a fully protected p channel mosfet 2N7000 TO220
Text: IXDD408PI / 408SI / 408YI / 408CI 8 Amp Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes. • Latch Up Protected • High Peak Output Current: 8A Peak • Operates from 4.5V to 25V
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IXDD408PI
408SI
408YI
408CI
2500pF
IXDD408
IXDD480
Edisonstrasse15
D-68623;
Ultrafast MOSFET Driver
2N7000
VM0580-02F
IC TTL 4700
cd4049a
fully protected p channel mosfet
2N7000 TO220
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Untitled
Abstract: No abstract text available
Text: Date:- 23 October, 2013 Data Sheet Issue:- 6 Rectifier Diode Types W3270N#200 and W3270N#220 Old Type No.: SW20-22CXC14C Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, note 1 2000-2200 V VRSM Non-repetitive peak reverse voltage, (note 1)
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W3270N
SW20-22CXC14C
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480 diode
Abstract: No abstract text available
Text: Date:- 9th May, 2013 Data Sheet Issue:- A1 Provisional Data Rectifier Diode Types W5139T#420 to W5139T#480 Development Type No.: WX377T#480 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, note 1 4200-4800
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W5139T
WX377T
480 diode
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T0258HF65G
Abstract: No abstract text available
Text: Date:- 27 Jan, 2014 Data Sheet Issue:- A1 Advance Data Insulated Gate Bi-Polar Transistor Type T0258HF65G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 6500 V VCES Collector – emitter voltage Tj 25°C
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T0258HF65G
T0258HF65G
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Brown Boveri induction Motor
Abstract: sj 2025 ic sj 2025 ASEA fast thyristor berulub F GD Rectifiers BROWN BOVERI servo motor bn16 brown Boveri diode Diode BN16
Text: IGBT Module Half-Bridge Configuration VII200-12G4 IC DC VCES VCE(sat) 3 High Short Circuit SOA Capability Symbol Test Conditions VCES VCGR T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MΩ VGES VGEM Continuous Transient IC25 IC100 ICM T C = 25°C
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VII200-12G4
IC100
Brown Boveri induction Motor
sj 2025
ic sj 2025
ASEA fast thyristor
berulub F
GD Rectifiers
BROWN BOVERI servo motor
bn16
brown Boveri diode
Diode BN16
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din IEC 68
Abstract: 150a gto GTO 100A IXYS 40N60A D-68623 DWEP 17-12 DWEP DWlP 2580B L 7CG
Text: Contents Page Symbols and Definitions Nomenclature General Information Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types S-Series, SCSOA Capability, Fast Types
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vm0580-02f
Abstract: ixdd414 2N7002/PLP lm339 igbt driver 2N7002 12w smps LM339 414CI IXDD414PI 2N7000 MOSFET protection driving mosfet/igbt with pulse transformer driver
Text: IXDD414PI / 414YI / 414CI 14 Amp Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes. • Latch-Up Protected • High Peak Output Current: 14A Peak • Wide Operating Range: 4.5V to 25V
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IXDD414PI
414YI
414CI
IXDD414
IXDD414PI
IXDD414YI
IXDD414CI
O-263
O-220
vm0580-02f
2N7002/PLP
lm339 igbt driver
2N7002 12w
smps LM339
414CI
2N7000 MOSFET protection
driving mosfet/igbt with pulse transformer driver
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IXDD415SI
Abstract: IXDD415 Ultrafast MOSFET Driver Class E amplifier 2N3904 D-68623 EVDD415 IR high voltage gate driver ic chips
Text: IXDD415SI Dual 15 Ampere Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected • High Peak Output Current: Dual 15A Peak • Wide Operating Range: 8V to 30V
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IXDD415SI
IXDD415
Edisonstrasse15
D-68623;
IXDD415SI
Ultrafast MOSFET Driver
Class E amplifier
2N3904
D-68623
EVDD415
IR high voltage gate driver ic chips
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Untitled
Abstract: No abstract text available
Text: DSSK 60-013A DSSK 60-015A IFAV = 2x30 A VRRM = 130/150 V VF = 0.69 V Power Schottky Rectifier with common cathode Preliminary Data VRSM VRRM V V 130 150 130 150 TO-247 AD Type A DSSK 60-013A DSSK 60-015A C A A C A C TAB A = Anode, C = Cathode , TAB = Cathode
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0-013A
0-015A
O-247
D98004E
D-68623
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Untitled
Abstract: No abstract text available
Text: IXDD404 4 Amp Dual Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 0.5A • High Peak Output Current: 4A Peak • Wide Operating Range: 4.5V to 35V
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IXDD404
1800pF
IXDD404
2N3904
DD404
IXDD404PI
IXDD404SI-CT
IXDD404SIA
IXDD404SI-16CT
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IXDD408CI
Abstract: ixdd408pi Cd4011a
Text: PRELIMINARY DATA SHEET IXDD408PI IXDD408YI IXDD408CI Ultrafast High Current MOSFET Driver Features Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes. • Latch Up Protected • High Peak Output Current: 8A Peak
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IXDD408PI
IXDD408YI
IXDD408CI
2500pF
IXDD408
IXDD480
Edisonstrasse15
IXDD408CI
Cd4011a
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Untitled
Abstract: No abstract text available
Text: IX6R11 6A Half-Bridge Driver Features General Description • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers
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IX6R11
IX6R11
sig500
IX6R11S3
IX6R11S6
Edisonstrasse15
D-68623;
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IXLK35N120AU1
Abstract: No abstract text available
Text: IGBT with Diode IXLK 35N120AU1 VCES I C25 VCE sat = 1200 V = 58 A = 3.6 V High Short Circuit SOA Capability Preliminary data Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1200 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V V GES Continuous
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35N120AU1
IXLK35N120AU1
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Untitled
Abstract: No abstract text available
Text: □IXYS Fast Recovery Epitaxial Diode FRED DSEI 2x101 1200 V V RRM 2x99 A F(AV)M t Preliminary data 40 ns rr miniBLOC, SOT-227 B V rSM V 1200 Symbol Type V rrm V Test Conditions -N - -Ho Maximum Ratings (per diode) 140 99 TBD A A A t = 10 ms (50 Hz), sine
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2x101
OT-227
2x101-12A
D-68623
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Untitled
Abstract: No abstract text available
Text: □IXŸS DSSK 70-008A Power Schottky Rectifier •f a v with common cathode V rrm VF v RSM v rr« V V 70 70 i- j Typ e A DSSK 70-008A C 1 2x35 A 70 V 0.66 V TO-247 AD A C TAB Symbol Test Conditions Maximum Ratings 70 35 70 A A A 700 A lAS = tbd A; L = 180 pH; TVJ = 25°C; non repetitive
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0-008A
O-247
D98004E
D-68623
GGD473Ã
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Untitled
Abstract: No abstract text available
Text: IX T H 1 5 N 7 0 M egaM O S FET VDSS ID cont D DS(on) = 700 V = 15 A = 0.45 ß N-Channel Enhancement Mode Symbol Test Conditions Voss T j = 25 °C to 150°C 700 V V qgr T j = 25 °C to 150°C; RGS = 1 MQ 700 V V 6S Continuous ±20 V vGSM Transient ±30
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O-247
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Untitled
Abstract: No abstract text available
Text: □IX Y S MEA / MEE / MEK 300-06DA Preliminary Data V RRM = 1200V Fast Recovery Epitaxial Diode FRED Module 600V 600V 1 rÎ I 2 3 Jj i, 2 r| 1 M 1 W l| 1 L ' frm TVJ = 45CC TVJ = 150°C Jpdt TVJ = 45° C TVJ = 150°C 1 I N I l< v , S0L t = 10 ms t = 8.3 ms
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300-06DA
300-012DA
300-12DA
D-68623
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Untitled
Abstract: No abstract text available
Text: 11 Y\. YS mma f X 1 .1 O v DSS MegaMOS FET IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V p ^D25 DS on 11 A 0.95 fì 13 A 0.80 Q N-Channel Enhancement Mode Symbol Test Conditions V * DSS ^ V DGR VGS v GSM ' d 25 •d m PD Maximum Ratings = 25°C to 150°C
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11N80
13N80
11N80
13N80
O-204
O-247
IXTM13N80
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