D456a
Abstract: No abstract text available
Text: Green Product STU/D456A S a mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS ON . PRODUCT SUMMARY V DSS R DS(ON) (m Ω) Max ID Rugged and reliable. 23 @ VGS=10V
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STU/D456A
O-252
O-251
252AA(
O-252
D456a
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Untitled
Abstract: No abstract text available
Text: Green Product STU/D456S S a mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS ON . PRODUCT SUMMARY V DSS R DS(ON) (m Ω) Max ID Rugged and reliable. 24 @ VGS=10V
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STU/D456S
O-252
O-251
252AA(
O-252
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Untitled
Abstract: No abstract text available
Text: D4560X Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.250f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage90 Q Factor Min. f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)1.0 Semiconductor MaterialSilicon Package StyleDO-7 Mounting StyleT
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D4560X
Voltage90
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Untitled
Abstract: No abstract text available
Text: D4562X Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.5p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage90 Q Factor Min. f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)1.0 Semiconductor MaterialSilicon Package StyleDO-7 Mounting StyleT
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D4562X
Voltage90
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p0406fc
Abstract: P0406FCxxC Series
Text: 05155 P0406FC3.3C - P0406FC36C Only One Name Means ProTek’Tion 250w flip chip tvs array Description The P0406FCxxC Series Flip Chips employ advanced silicon P/N junction technology for unmatched board-level transient voltage protection against Electrostatic Discharge ESD and Electrical Fast Transients (EFT). Developed specifically for high-density circuit protection, this series meets the IEC 61000-4-2 and 61000-4-4 requirements. These devices are ideally suited for handheld devices, PCMCIA and SMART cards.
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P0406FC3
P0406FC36C
P0406FCxxC
p0406fc
P0406FCxxC Series
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Socket S1g1
Abstract: AMD Turion 64 Mobile Technology AM2 amd amd AM2 opteron pin package HTC B834 Socket S1g1 Processor Functional AMD SEMPRON 3000 socket 754 DIAGRAM SEMPRON Socket 754 AM2 31117 CMPXCHG16B
Text: BIOS and Kernel Developer's Guide for AMD NPT Family 0Fh Processors Publication # 32559 Revision: 3.16 Issue Date: November 2009 2005-2009 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro Devices,
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Abstract: No abstract text available
Text: 05107 P0402FC3.3C* thru Only One Name Means ProTek’Tion P0402FC36C* FLIP CHIP ARRAY APPLICATIONS ✔ Cellular Phones ✔ MCM Boards ✔ Wireless Communication Circuits ✔ IR LEDs ✔ SMART & PCMCIA Cards IEC COMPATIBILITY EN61000-4 ✔ 61000-4-2 (ESD): Air - 15kV, Contact - 8kV
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P0402FC3
P0402FC36C*
EN61000-4)
5/50ns
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Untitled
Abstract: No abstract text available
Text: Product Folder Sample & Buy Technical Documents Tools & Software Support & Community AM1806 SPRS658F – FEBRUARY 2010 – REVISED MARCH 2014 AM1806 ARM Microprocessor 1 AM1806 ARM Microprocessor 1.1 Features 1 • 375- and 456-MHz ARM926EJ-S RISC MPU
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AM1806
SPRS658F
AM1806
456-MHz
ARM926EJ-Sâ
16-Bit-Wide
16-Bit
128-MB
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p0404fc
Abstract: P0404FCxxC Series
Text: 05154 P0404FC3.3C - P0404FC36C Only One Name Means ProTek’Tion 250w flip chip tvs array Description The P0404FCxxC Series Flip Chips employ advanced silicon P/N junction technology for unmatched board-level transient voltage protection against Electrostatic Discharge ESD and Electrical Fast Transients (EFT). Developed specifically for high-density circuit protection, this series meets the IEC 61000-4-2 and 61000-4-4 requirements. These devices are ideally suited for handheld devices, PCMCIA and SMART cards.
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P0404FC3
P0404FC36C
P0404FCxxC
p0404fc
P0404FCxxC Series
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p0408fc
Abstract: P0408FCxxC Series
Text: 05156 P0408FC3.3C - P0408FC36C Only One Name Means ProTek’Tion 250w flip chip tvs array Description The P0408FCxxC Series Flip Chips employ advanced silicon P/N junction technology for unmatched board-level transient voltage protection against Electrostatic Discharge ESD and Electrical Fast Transients (EFT). Developed specifically for high-density circuit protection, this series meets the IEC 61000-4-2 and 61000-4-4 requirements. These devices are ideally suited for handheld devices, PCMCIA and SMART cards.
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P0408FC3
P0408FC36C
P0408FCxxC
p0408fc
P0408FCxxC Series
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lc0404fc
Abstract: LC0404FCxxC Series
Text: 05157 LC0404FC3.3C - LC0404FC36C Only One Name Means ProTek’Tion 200W LOW CAPACITANCE flip chip tvs array Description The LC0404FCxxC Series Flip Chips employ advanced silicon P/N junction technology for unmatched board-level transient voltage protection against Electrostatic Discharge ESD and Electrical Fast Transients (EFT). Developed specifically for high-density circuit protection, this series meets the IEC 61000-4-2 and 61000-4-4 requirements. These devices are ideally suited for handheld devices, PCMCIA and SMART cards.
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LC0404FC3
LC0404FC36C
LC0404FCxxC
lc0404fc
LC0404FCxxC Series
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lc0408fc
Abstract: LC0408FCxxC Series
Text: 05153 LC0408FC3.3C - LC0408FC36C Only One Name Means ProTek’Tion 200w low capacitance flip chip tvs array Description The LC0408FCxxC Series Flip Chips employ advanced silicon P/N junction technology for unmatched board-level transient voltage protection against Electrostatic Discharge ESD and Electrical Fast Transients (EFT). Developed specifically for high-density circuit protection, this series meets the IEC 61000-4-2 and 61000-4-4 requirements. These devices are ideally suited for handheld devices, PCMCIA and SMART cards.
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LC0408FC3
LC0408FC36C
LC0408FCxxC
lc0408fc
LC0408FCxxC Series
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FT 12.000 MHZ
Abstract: No abstract text available
Text: Detailed Specifications & Technical Data ENGLISH MEASUREMENT VERSION 1505A Coax - RG-59/U Type For more Information please call 1-800-Belden1 Description: 20 AWG solid .032" bare copper conductor, gas-injected foam HDPE insulation, Duofoil + tinned copper
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RG-59/U
1-800-Belden1
73/23/EEC)
93/68/EEC.
FT 12.000 MHZ
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belden 59 coax
Abstract: No abstract text available
Text: Detailed Specifications & Technical Data METRIC MEASUREMENT VERSION 1855A Coax - Sub-Miniature For more Information please call 1-800-Belden1 Description: 23 AWG solid .023" bare copper conductor, gas-injected foam HDPE insulation, Duofoil + tinned copper
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1-800-Belden1
73/23/EEC)
93/68/EEC.
belden 59 coax
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D2-470K
Abstract: D2-331K D2270 D4-270K D4182 D2-100K D2-120K D2-330K D2390 D4-121K
Text: HIGH CURRENT DRUM CORE INDUCTOR SERIES D 59 B ELECTRICAL CHARACTERISTICS - Inductance - Tolerance - Rated current - Testing procedures 1.0uH to 4700uH ± 20% for values under 10µH ± 10% for values above 10µH Obtained when Lo drops 10% typical Quadtech LCR 1750 Meter @ 1KHz
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4700uH
D4-122K
D4-152K
D4-182K
D4-222K
D4-272K
D4-332K
D4-392K
D4-472K
D2-470K
D2-331K
D2270
D4-270K
D4182
D2-100K
D2-120K
D2-330K
D2390
D4-121K
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Untitled
Abstract: No abstract text available
Text: 05107 P0402FC3.3C* thru P0402FC36C* FLIP CHIP ARRAY APPLICATIONS ✔ Cellular Phones ✔ MCM Boards ✔ Wireless Communication Circuits ✔ IR LEDs ✔ SMART & PCMCIA Cards IEC COMPATIBILITY EN61000-4 ✔ 61000-4-2 (ESD): Air - 15kV, Contact - 8kV ✔ 61000-4-4 (EFT): 40A - 5/50ns
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P0402FC3
P0402FC36C*
EN61000-4)
5/50ns
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Untitled
Abstract: No abstract text available
Text: 05154 P0404FC3.3C* thru Only One Name Means ProTek’Tion P0404FC36C* FLIP CHIP ARRAY APPLICATIONS ✔ Cellular Phones ✔ MCM Boards ✔ Wireless Communication Circuits ✔ IR LEDs ✔ SMART & PCMCIA Cards IEC COMPATIBILITY EN61000-4 0404 ✔ 61000-4-2 (ESD): Air - 15kV, Contact - 8kV
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P0404FC3
P0404FC36C*
EN61000-4)
5/50ns
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k d718
Abstract: transistor d472 D636 R transistor d669 D718 transistor d718 d718* transistor transistor d613 D674 D666
Text: Ordering number : ENN*6473 CMOS IC LC75878E, 75878W 1/8 to 1/10 Duty General-Purpose LCD Display Drivers Preliminary Overview Package Dimensions The LC75878E and LC75878W are 1/8 to 1/10 duty general-purpose LCD display drivers used for character and graphics display. These products operate under the
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LC75878E,
5878W
LC75878E
LC75878W
3151-QFP100E
LC75878E]
QFP100E
3181B-SQFP100
LC75878W]
k d718
transistor d472
D636 R
transistor d669
D718
transistor d718
d718* transistor
transistor d613
D674
D666
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belden 9370
Abstract: RG6 ATTENUATION FT 12.000 MHZ A/belden 9370
Text: Detailed Specifications & Technical Data ENGLISH MEASUREMENT VERSION 1694A Coax - Low Loss Serial Digital Coax For more Information please call 1-800-Belden1 Description: RG-6/U Type, 18 AWG solid .040" bare copper conductor, gas-injected foam HDPE insulation, Duofoil +
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1-800-Belden1
73/23/EEC)
93/68/EEC.
belden 9370
RG6 ATTENUATION
FT 12.000 MHZ
A/belden 9370
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CD4560B
Abstract: CD4560 4560B D456 D4560
Text: HAR D4560B Types High-Voltage Types 20-Volt Rating 92CS-39I97 F U N C T IO N A L DIAGRAM Features: • F our sum o u tp u ts p lu s c a rry o ut ■ S ta n d a rd iz e d s y m m e tr ic a l o u tp u t chara cteristics ■ M a xim u m in p u t c u rre n t o f 1 /j A at
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20-Volt
100nA
D4560B
92CS-39I97
92CS-2744
92CS-27429
CD4560B
CD4560
4560B
D456
D4560
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D4564323
Abstract: No abstract text available
Text: PRELIMINARY DATASHEET NEC MOS INTEGRATED CIRCUIT 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The /¿D4564323 is a high-speed 67,108,864 bits synchronous dynamic random -access memories, organized as 524,288 w o rd s x 3 2 b its x 4 banks. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.
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uPD4564323
86-pin
D4564323
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT /¿D4564323 for Rev. E 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,D4564323 is a high-speed 67,108,864-bit synchronous dynamic random -access memory, organized as 524,288 words x 32 bits x 4banks. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.
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PD4564323
64M-bit
uPD4564323
864-bit
86-pin
S86G5-50-9JH
M14376EJ1V0DS00
PD4564323G5:
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT 64M-BIT VIRTUAL CHANNEL SDRAM SINGLE DATA RATE 64M-BIT VIRTUAL CHANNEL SDRAM VERSION 1.1 Description The 64 Mbit Virtual Channel VC SDRAM is implemented to be 100% pin and package compatible to the industry standard SDRAM. It uses the same command protocol and interface as SDRAM. The VC SDRAM command set is a
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64M-BIT
S54G5-80-9JF
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d4564841
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ;iP D 4 5 6 4 4 4 1 , 4 5 6 4 8 4 1 , 4 5 6 4 1 6 3 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,D4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.
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64M-bit
uPD4564441
864-bit
54-pin
d4564841
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