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    NEC Electronics Group UPD4564323G5-A10-9JH

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    NexGen Digital UPD4564323G5-A10-9JH 540
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    D4564323

    Abstract: No abstract text available
    Text: PRELIMINARY DATASHEET NEC MOS INTEGRATED CIRCUIT 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The /¿D4564323 is a high-speed 67,108,864 bits synchronous dynamic random -access memories, organized as 524,288 w o rd s x 3 2 b its x 4 banks. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.


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    PDF uPD4564323 86-pin D4564323

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    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT /¿D4564323 for Rev. E 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,D4564323 is a high-speed 67,108,864-bit synchronous dynamic random -access memory, organized as 524,288 words x 32 bits x 4banks. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.


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    PDF PD4564323 64M-bit uPD4564323 864-bit 86-pin S86G5-50-9JH M14376EJ1V0DS00 PD4564323G5: