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    D38S Price and Stock

    Brady Worldwide Inc ALU-RED-38ST-KD

    ALUM PADLOCK RED 38MM STEEL SHKL
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    DigiKey ALU-RED-38ST-KD Bulk 13 1
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    Newark ALU-RED-38ST-KD Bulk 242 1
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    Brady Worldwide Inc NYL-RED-38ST-KD

    NYLON PADLOCK RED 38MM STEEL SHK
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    DigiKey NYL-RED-38ST-KD Bulk 2 1
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    Newark NYL-RED-38ST-KD Bulk 2,235 1
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    Master Electronics NYL-RED-38ST-KD 30
    • 1 $18.66
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    Techni-Tool, Inc. NYL-RED-38ST-KD
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    TestEquity LLC NYL-RED-38ST-KD
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    Brady Worldwide Inc SDAL-RED-38ST-KD24

    SD ALU RED 38ST KD24PK
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    DigiKey SDAL-RED-38ST-KD24 Bulk 2 1
    • 1 $172.49
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    Techni-Tool, Inc. SDAL-RED-38ST-KD24
    • 1 $257.99
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    TestEquity LLC SDAL-RED-38ST-KD24
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    Brady Worldwide Inc ALU-RED-38ST-KD6PK

    ALUM PADLOCK RED 38MM STL SHKL K
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    DigiKey ALU-RED-38ST-KD6PK Bulk 2 1
    • 1 $130.78
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    Newark ALU-RED-38ST-KD6PK Pack 419 1
    • 1 $123.99
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    Brady Worldwide Inc SDPL-RED-38ST-KD

    SD PLASTIC RED 38ST KD
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    DigiKey SDPL-RED-38ST-KD Bulk 1 1
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    Techni-Tool, Inc. SDPL-RED-38ST-KD
    • 1 $8.19
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    TestEquity LLC SDPL-RED-38ST-KD
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    D38S Datasheets (34)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    D38S1 General Electric Semiconductor Data Handbook 1977 Scan PDF
    D38S1 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    D38S1 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    D38S10 General Electric Semiconductor Data Handbook 1977 Scan PDF
    D38S10 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    D38S10 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    D38S1-10 General Electric Semiconductor Data Handbook 1977 Scan PDF
    D38S1-4 General Electric Semiconductor Data Handbook 1977 Scan PDF
    D38S2 General Electric Semiconductor Data Handbook 1977 Scan PDF
    D38S2 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    D38S2 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    D38S3 General Electric Semiconductor Data Handbook 1977 Scan PDF
    D38S3 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    D38S3 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    D38S4 General Electric Semiconductor Data Handbook 1977 Scan PDF
    D38S4 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    D38S4 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    D38S5 General Electric Semiconductor Data Handbook 1977 Scan PDF
    D38S5 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    D38S5 Unknown Shortform Transistor PDF Datasheet Short Form PDF

    D38S Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    D86S

    Abstract: 68b1 6.2B2 56B2 5.6B2 D158S 54B2 62b1 D33SH 62B2
    Text: A B C D REVISIONS ENGINEERING NOTES 1. Device is dead bug laid out 2. Pin 1 is pointing south 3. A 0.01uf chip capacitor in parallel 4. Use an odd channel, also reserve an 5. Use an odd and even chan. Tie them 6. DUT Analog star GND pin 51, 54 7. Supertex Inc.


    Original
    TN0604N3 BT8952 RCV15 RCVCLK58 GND51 VAA50 XFS48 AGAIN1462 D68SH D36SH D86S 68b1 6.2B2 56B2 5.6B2 D158S 54B2 62b1 D33SH 62B2 PDF

    Untitled

    Abstract: No abstract text available
    Text: JC 20 SERIES C O N N EC TO R S -fwo-P/ece Connectors for 1CMemory Cards-• JC20 SERIES D TYPE CONNECTORS • SOCKET CONNECTOR FOR CARD SIDE 38 CONTACTS/1.27 .050 PITCH Part Num ber: JC20-D38S-F1-A1


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    JC20-D38S-F1-A1 PDF

    Untitled

    Abstract: No abstract text available
    Text: J C 2 0 S E R IE S C O N N E C T O R S Two-Piece Connectors for 1C Memory Cards • JC20 SERIES D TYPE CONNECTORS • SOCKET CONNECTOR FOR CARD SIDE 38 CONTACTS/1.27 .050 PITCH Part Number: JC20-D38S-F1-A1 Section A-A (Note) Contact finish: Gold plating 0.1pm (.000004") min. on connecting area.


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    JC20-D38S-F1-A1 JC20-D38P-LT1 PDF

    D38S7

    Abstract: D38S1 D38S5 D38S1-10 D38S2 D38S3 D38S4 D38S8 D38S
    Text: Silicon Transistors The General Electric D38S1-10 series are NPN silicon, planar, epitaxial, transistors. They feature super high gain and low collector saturation voltage as well as a low noise figure. They are ideal for low level low noise amplifier and battery operated applications and output stages o f operational


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    D38S1-10 10/iS D38S3' D38S7 D38S1-10 D38S7 D38S1 D38S5 D38S2 D38S3 D38S4 D38S8 D38S PDF

    D38S6

    Abstract: E701 SN54ABT646A SN74ABT646A
    Text: flTblTEB □□'1E701 ObT • T II3 SN54ABT646A, SN74ABT646A OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS _ SCBS069D - D38S6, JULY 1991 - REVISED JU LY 1993 SN54ABT646A . . . JT PACKAGE SN74ABT646A . . . DB, OW, OR NT PACKAGE


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    SN54ABT646A, SN74ABT646A SCBS069D D38S6, MIL-STD-883C, JESD-17 -32-mA 64-mA sn54abt646a sn74abt646a D38S6 E701 SN54ABT646A PDF

    c 337 25

    Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
    Text: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3


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    PDF

    A9 npn

    Abstract: GES93 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. M ax. @ l c (m A) 10 10 10 10 2 •BaBB B B i» « ¡■ M l ■ M M ■ ■ ■ I 300 350 250 300 300 25 ?.5 2.5 2.5 2.5 200


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    2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 A9 npn GES93 PDF

    2N4123 pnp silicon

    Abstract: 2N4401 520 GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE b v ceo Device Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50


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    GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 2N4123 pnp silicon 2N4401 520 PDF

    2N5309

    Abstract: 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (S A T ) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN


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    2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 012ySC 2N5309 2N5305 2N5306 PDF

    D38S1-4

    Abstract: 2N3901 D38S7 GES93 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A
    Text: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE Type b v CEO 2N3391A 2N3844 2N3844A 2N3845 2N3845A NPN NPN NPN NPN NPN 25 30 30 30 30 2N3900A 2N3901 2N5232A 2N5249A 2N5306A NPN NPN NPN NPN NPN 18 18 50 50 25 250-&00 350-700 250-500 400-800 7K-70K 2mA, 2mA,


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    2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 D38S1-4 D38S7 GES93 PDF

    2N3901

    Abstract: GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 P A C K A G E Device b v ceo Type @ 10mA V Min. 1 60 II 60 40 • m 40 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005 GES6006


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    GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES60I GES6014, 2N3901 GES6001 PDF

    B331 transistor

    Abstract: transistor b331 Transistor B28D A 42 B331 transistor A 92 B331 transistor A 42 B331 transistor B324 KT 117A 851B52 intel 8049 microcomputer
    Text: 1 AP-91 USING THE 8049 AS AN 80 COLUMN PRINTER CONTROLLER I. INTRODUCTION This A pplication N ote d eta ils u sin g I N T E L ’S 8049 m icrocom puter a s a d ot m atrix p rin ter controller. P re v io u s I N T E L A pplication n o tes, e.g. AP-27 and AP-54 d escrib e d usin g in telligen t p ro c e sso rs and p eri­


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    AP-91 AP-27 AP-54) B331 transistor transistor b331 Transistor B28D A 42 B331 transistor A 92 B331 transistor A 42 B331 transistor B324 KT 117A 851B52 intel 8049 microcomputer PDF

    mpsa65

    Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 P AC KAG E VCE sat 1F E b v ceo Device Type @ 10mA-(V) Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30


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    GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 mpsa65 MPSA20 PDF

    n3904

    Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
    Text: SILICON SIGNAL TRANSISTORS G EN ERAL PURPOSE A M PLIFIERS TO-92 PACKAGE Device bvceo Type @ 10mA- V Min. Max. @ lc (mA) G ES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50


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    GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20n) -300mA, n3904 MPSA20 PDF

    GES5819

    Abstract: GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 MPSA55
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE b v ceo Device Type @ 10mA- V Min. Max. @ lc (mA) G ES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50


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    GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 MPS6534 MPSA20 MPSA55 PDF

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 PDF

    quan-tech

    Abstract: D39C4 2N3901 GES6220 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A
    Text: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE Type b v CEO 2N3391A 2N3844 2N3844A 2N3845 2N3845A NPN NPN NPN NPN NPN 25 30 30 30 30 2N3900A 2N3901 2N5232A 2N5249A 2N5306A NPN NPN NPN NPN NPN 18 18 50 50 25 250-&00 350-700 250-500 400-800 7K-70K 2mA, 2mA,


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    2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 2N5307, quan-tech D39C4 GES6220 PDF

    TRANSISTOR 2n3901

    Abstract: 2N390 pnp 2N3901 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C KA G E b v CEO Device Type @ 10mA V V C E (S A T ) hFE Min.-Max. @ I c , V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390


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    2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 TRANSISTOR 2n3901 2N390 pnp 2N3901 PDF

    ES5448

    Abstract: GES6220 GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 P A C K A G E Device bvceo Type @ 10mA V Min. 1 60 II 60 40 • m 40 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005 GES6006 GES6007


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    GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 40MBIENT 9ES6003 ES5448 GES6220 PDF

    GES5822

    Abstract: GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 GES6002
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 P A C K A G E Device bvceo Type @10mA V Min. 1 60 II 60 40 • m 40 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005 GES6006 GES6007


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    GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 ges6011, 6ES60II GES6001 GES6002 PDF

    2n3901 equivalent

    Abstract: 2N3900 pnp 2N3900 pnp transistor 2n3900 2N3392 equivalent 2N2711 2N2712 2N2713 2N2714 2N2923
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V V CE (SAT) hFE M in.-M ax. @ I c , V 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391 NPN


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    2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2n3901 equivalent 2N3900 pnp 2N3900 pnp transistor 2n3900 2N3392 equivalent PDF

    MPS6531

    Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50 50 20,000 10,000


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    GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA206531, MPS6532 MPS6531 MPSA20 PDF

    2N5232

    Abstract: 2N4256 2N4424 2N4425 2N5174 2N5232A 2N5249A 2N5305 2N5306 2N5309
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 P A C K A G E Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V CE(SAT) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN


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    2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 2N5232, 2N5305 2N5306 2N5309 PDF

    2N3643

    Abstract: 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (S A T ) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘


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    2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3643 PDF