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    D16U Price and Stock

    Rochester Electronics LLC RD16UJ-T1-A

    RD16UJ-T1-A - LOW NOISE SHARP BR
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    DigiKey RD16UJ-T1-A Bulk 126,000 2,971
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    Rochester Electronics LLC RD16UM-T1-A

    RD16UM - ZENER DIODE
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    DigiKey RD16UM-T1-A Bulk 63,000 2,284
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    Littelfuse Inc SLD16U-017

    TVS DIODE 16VWM 26VC P600
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    DigiKey SLD16U-017 Reel 3,200 800
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    SLD16U-017 Cut Tape 1,891 1
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    Mouser Electronics SLD16U-017 528
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    Newark SLD16U-017 Bulk 826 1
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    SLD16U-017 Cut Tape 800
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    Bristol Electronics SLD16U-017 336 2
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    TTI SLD16U-017 Reel 800
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    Chip1Stop SLD16U-017 824
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    Ozdisan Elektronik SLD16U-017
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    Diodes Incorporated ULN2004AD16-U

    IC PWR RELAY 7NPN 1:1 16DIP
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    DigiKey ULN2004AD16-U Tube 491 1
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    Littelfuse Inc SLD16U-017-B

    TVS DIODE 16VWM 26VC P600
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    DigiKey SLD16U-017-B Bulk 110 1
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    Mouser Electronics SLD16U-017-B 20
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    TTI SLD16U-017-B Bulk 100
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    Ozdisan Elektronik SLD16U-017-B
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    D16U Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MA2180

    Abstract: No abstract text available
    Text: SDRAM MODULE KMM377S2858AT2 KMM377S2858AT2 SDRAM DIMM Intel 1.1 ver. Base 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM377S2858AT2 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The


    Original     		PDF KMM377S2858AT2 KMM377S2858AT2 128Mx72 128Mx4, 128Mx4 400mil 18-bits 24-pin MA2180

    Untitled

    Abstract: No abstract text available
    Text: SDRAM MODULE KMM377S2858AT3 KMM377S2858AT3 SDRAM DIMM 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM377S2858AT3 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The


    Original     		PDF KMM377S2858AT3 KMM377S2858AT3 128Mx72 128Mx4, 128Mx4 400mil 18-bits 24-pin

    ACIG-UM001

    Abstract: 1799-ZCIO DIN EN 60068-2-14 Na 42560 1799-DNETCON 777df-d50p DDM50 pnp 3223 1799-AUXCON 1923432
    Text: Technical Data Embedded I/O for DeviceNet 1799 Family The 1799 Embedded I/O family provides 24V dc digital I/O modules that can be mounted directly inside a machine in a conveyor rail or within a field replaceable unit. The 1799 modules contain I/O circuits,


    Original     		PDF 1799-TD001C-EN-P 1799-TD001B-EN-P ACIG-UM001 1799-ZCIO DIN EN 60068-2-14 Na 42560 1799-DNETCON 777df-d50p DDM50 pnp 3223 1799-AUXCON 1923432

    ACIG-UM001

    Abstract: pnp 3223 1799-ZCIO 1799-DNETCON 1923432 3223 pnp 777df-d50p DNET-SG001 1799-ZCIOV devicelogix network output
    Text: EMBEDDED I/O FOR DEVICENET SELECTION GUIDE 1799 FAMILY 2 Overview Introduction The 1799 Embedded I/O family provides 24V dc digital I/O modules that can be mounted directly inside a machine in a conveyor rail or within a field replaceable unit. The 1799 modules contain I/O circuits, a built-in power


    Original     		PDF 1799-SG001A-EN-P 1799-TD001C-EN-P ACIG-UM001 pnp 3223 1799-ZCIO 1799-DNETCON 1923432 3223 pnp 777df-d50p DNET-SG001 1799-ZCIOV devicelogix network output

    CDC2510A

    Abstract: KMM375S3227BT-G0 KMM375S3227BT-G8 KMM375S3227BT-GH KMM375S3227BT-GL d11u D16U
    Text: Preliminary KMM375S3227BT SDRAM MODULE KMM375S3227BT SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on Stacked 32Mx4, 4Banks 4K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM375S3227BT is a 32M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung KMM375S3227BT consists of eighteen CMOS Stacked


    Original     		PDF KMM375S3227BT KMM375S3227BT 32Mx72 32Mx4, 32Mx4 400mil 18-bits 24-pin CDC2510A KMM375S3227BT-G0 KMM375S3227BT-G8 KMM375S3227BT-GH KMM375S3227BT-GL d11u D16U

    CDC2510A

    Abstract: KMM377S3227BT1-GL MA2180
    Text: SDRAM MODULE Preliminary KMM377S3227BT1 Revision History Revision 4 May 1998 - CLK Input Cap. is added by PLL Input Cap. (27pF) Revision 5 (July 1998) - "REGE" description is changed. REV. 5 July 1998 Preliminary KMM377S3227BT1 SDRAM MODULE KMM377S3227BT1 SDRAM DIMM (Intel 1.0 ver. Base)


    Original     		PDF KMM377S3227BT1 KMM377S3227BT1 32Mx72 32Mx4, 32Mx4 400mil 18-bits CDC2510A KMM377S3227BT1-GL MA2180

    Untitled

    Abstract: No abstract text available
    Text: PC100 Registered DIMM KMM377S2858AT3 Revision History Revision 0.1 May 27, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.


    Original     		PDF KMM377S2858AT3 PC100 118DIA 000DIA 128Mx4 KM44S28238AT

    D12U

    Abstract: No abstract text available
    Text: M377S6428MT1 PC100 Registered DIMM Revision History Revision 0.1 April 29, 2000 - Added the description of " Staktek’s stacking technology is Samsung’s stacking technology of choice." Rev. 0.1 Apr. 2000 M377S6428MT1 PC100 Registered DIMM M377S6428MT1 SDRAM DIMM (Intel 1.0 ver. Base)


    Original     		PDF M377S6428MT1 PC100 M377S6428MT1 64Mx72 64Mx4, 64Mx4 D12U

    Untitled

    Abstract: No abstract text available
    Text: M377S2858AT2 SDRAM MODULE Revision History Revision 0.1 April 29, 2000 - Added the description of " Staktek’s stacking technology is Samsung’s stacking technology of choice." Rev. 0.1 Apr. 2000 M377S2858AT2 SDRAM MODULE M377S2858AT2 SDRAM DIMM (Intel 1.1 ver. Base)


    Original     		PDF M377S2858AT2 M377S2858AT2 128Mx72 128Mx4, 128Mx4 400mil 18-bits

    KMM377S2858AT3-GH

    Abstract: No abstract text available
    Text: PC100 Registered DIMM KMM377S2858AT3 Revision History Revision 0.1 May 27, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.


    Original     		PDF PC100 KMM377S2858AT3 KM44S28238AT 128Mx4 KMM377S2858AT3-GH

    CDC2509

    Abstract: MA2180
    Text: SDRAM MODULE Preliminary KMM377S3227BT Revision History Revision .2 Jan. 1998 •DC Characteristics values are changed. : ICC2 N & ICC3 N •STANDARD TIMING DIAGRAM is changed . •All AC parameters are measured by module tap reference(refer to page#5) •CAS Latency is based on Reg. DIMM (In case of Unbuff. DIMM CAS Latency is 1 CLK earlier than this)


    Original     		PDF KMM377S3227BT 200mA. 100Min 540Min) 250Max 35Max) 010Max 32Mx4 KM44S32037BT CDC2509 MA2180

    CDC2510A

    Abstract: KMM375S6427T-GL KMM375S6427T-G0 KMM375S6427T-G8 KMM375S6427T-GH
    Text: Preliminary KMM375S6427T SDRAM MODULE KMM375S6427T SDRAM DIMM 64Mx72 SDRAM DIMM with PLL & Register based on Stacked 64Mx4, 4Banks 4K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM375S6427T is a 64M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung KMM375S6427T consists of eighteen CMOS Stacked


    Original     		PDF KMM375S6427T KMM375S6427T 64Mx72 64Mx4, 64Mx4 400mil 18-bits 24-pin CDC2510A KMM375S6427T-GL KMM375S6427T-G0 KMM375S6427T-G8 KMM375S6427T-GH

    Untitled

    Abstract: No abstract text available
    Text: KMM377S2858AT2 SDRAM MODULE Revision History Revision 0.0 May 11, 1999 • Eliminated Preliminary. Revision 0.1 (April 29, 2000) • Added the description of " Staktek’s stacking technology is Samsung’s stacking technology of choice." Rev. 0.1 Apr. 2000


    Original     		PDF KMM377S2858AT2 KMM377S2858AT2 128Mx72 128Mx4, 128Mx4 400mil 18-bits

    Untitled

    Abstract: No abstract text available
    Text: M377S6428AT3 PC100 Registered DIMM M377S6428AT3 SDRAM DIMM Intel 1.2 ver Base 64Mx72 SDRAM DIMM with PLL & Register based on Stacked 64Mx4, 4Banks, 4K Ref., 3.3V SDRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung M377S6428AT3 is a 64M bit x 72 Synchronous


    Original     		PDF M377S6428AT3 M377S6428AT3 PC100 64Mx72 64Mx4, 64Mx4 400mil 18-bits

    Untitled

    Abstract: No abstract text available
    Text: PC100 Registered DIMM M377S2858CT3 M377S2858CT3 SDRAM DIMM Intel 1.2 ver Base 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S2858CT3 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M377S2858CT3 consists of eighteen CMOS Stacked


    Original     		PDF PC100 M377S2858CT3 M377S2858CT3 128Mx72 128Mx4, 128Mx4 400mil 18-bits

    CDC2510A

    Abstract: KMM377S6427T1GL
    Text: SDRAM MODULE Preliminary KMM377S6427T1 Revision History Revision 3 May 1998 - CLK Input Cap. is added by PLL Input Cap. (27pF) Revision 4 (July 1998) - "REGE" description is changed. REV. 4 July 1998 Preliminary KMM377S6427T1 SDRAM MODULE KMM377S6427T1 SDRAM DIMM (Intel 1.0 ver. Base)


    Original     		PDF KMM377S6427T1 KMM377S6427T1 64Mx72 64Mx4, 64Mx4 400mil 18-bits CDC2510A KMM377S6427T1GL

    M377S2858AT3-C1H

    Abstract: M377S2858AT3-C1L
    Text: M377S2858AT3 PC100 Registered DIMM Revision History Revision 0.1 April 29, 2000 - Added the description of " Staktek’s stacking technology is Samsung’s stacking technology of choice." Rev. 0.1 Apr. 2000 PC100 Registered DIMM M377S2858AT3 M377S2858AT3 SDRAM DIMM (Intel 1.2 ver Base)


    Original     		PDF M377S2858AT3 PC100 M377S2858AT3 128Mx72 128Mx4, 128Mx4 M377S2858AT3-C1H M377S2858AT3-C1L

    1-30N

    Abstract: No abstract text available
    Text: Preliminary KMM377S3227BT1 SDRAM MODULE KMM377S3227BT1 SDRAM DIMM Intel 1.0 ver. Base 32Mx72 SDRAM DIMM with PLL & Register based on Stacked 32Mx4, 4Banks 4K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM377S3227BT1 is a 32M bit x 72 Synchro­


    OCR Scan     		PDF KMM377S3227BT1 KMM377S3227BT1 32Mx72 32Mx4, 32Mx4 400mil 18-bits 24-pin 1-30N

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


    OCR Scan     		PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp

    Untitled

    Abstract: No abstract text available
    Text: SDRAM MODULE Preliminary KMM377S6427T3 Revision History R e visio n 1 Feb. - 1999 Corrected CS Swapping in Block Diagram. REV. 1 Feb 1999 Preliminary KMM377S6427T3 SDRAM MODULE KMM377S6427T3 SDRAM DIMM 64M x72 SDR AM DIMM w ith PLL & R egister based on S tacked 64M x4, 4B anks, 4K Ref., 3.3V S D R A M s w ith SPD


    OCR Scan     		PDF KMM377S6427T3 KMM377S6427T3 377S6427T3 377S6427T3-G 44S64037T

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM377S2857AT2 SDRAM MODULE KMM377S2857AT2 SDRAM DIMM Intel 1.1 ver. Base 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung KMM377S2857AT2 is a 128M bit x 72 Syn­


    OCR Scan     		PDF KMM377S2857AT2 KMM377S2857AT2 128Mx72 128Mx4, KMM377S2857AT2-GH 100MHz 128Mx4 KMM377S2857AT2-GL

    st178

    Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
    Text: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment


    OCR Scan     		PDF Sylvan58MC 09A001-00 66X0003-001 50746A 68X0003 68X0003-001 T-E0137 93B3-3 93B3-4 st178 diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor