D16NE Search Results

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STMicroelectronics STD16NE06T4
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	STD16NE06T4		2,500		6	1 - 10 $0.9375 100 $0.3516 1000 $0.2625 10000 $0.2438	Buy Now
	STD16NE06T4		54			1 - 10 - 100 - 1000 - 10000 -	Get Quote
STMicroelectronics STD16NE06LT4
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	STD16NE06LT4		360		6	1 - 10 $0.9375 100 $0.3516 1000 $0.3 10000 $0.3	Buy Now
SGS Semiconductor Ltd STD16NE06 Electronic Component
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	STD16NE06		1,945			1 - 10 - 100 - 1000 - 10000 -	Get Quote
SGS Semiconductor Ltd STD16NE06L N-CHANNEL 60V-0.06 OHM-16A DPAK STRIPFET POWER MOSFET Power Field-Effect Transistor, 16A I(D), 60V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	STD16NE06L		214			1 - 10 - 100 - 1000 - 10000 -	Get Quote
STMicroelectronics STD16NE06-1 INSTOCK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Chip 1 Exchange	STD16NE06-1		1,500			1 - 10 - 100 - 1000 - 10000 -	Get Quote

D16NE Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
D16NE10L		STMicroelectronics	N-Channel 100V - 0.07 ohm - 16A DPAK STripFET POWER MOSFET		Original	PDF

D16NE Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
dc-acconverters Abstract: d16ne S1737 STD16NE10 Text: D16NE10  N - CHANNEL 100V - 0.07Ω - 16A - IPAK/DPAK STripFET MOSFET TYPE ST D16NE10 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.1 Ω 16 A TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED	Original	PDF	STD16NE10 D16NE10 O-251) O-252) dc-acconverters d16ne S1737 STD16NE10
D16NE06 Abstract: D16NE06L ST16NE06 STD16NE06L-1 Text: D16NE06L-1  N - CHANNEL 60V - 0.07 Ω - 16A - TO-251 STripFET ” POWER MOSFET PRELIMINARY DATA T YPE ST D16NE06L-1 • ■ ■ ■ ■ V DSS R DS o n ID 60 V < 0.085 Ω 16 A TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED	Original	PDF	STD16NE06L-1 O-251 D16NE06L-1 D16NE06 D16NE06L ST16NE06 STD16NE06L-1
STD16NE10 Abstract: No abstract text available Text: D16NE10  N - CHANNEL 100V - 0.07Ω - 16A - IPAK/DPAK STripFET MOSFET TYPE ST D16NE10 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.1 Ω 16 A TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED	Original	PDF	STD16NE10 D16NE10 O-251) O-252) STD16NE10
D16NE10L Abstract: JESD97 STD16NE10L STD16NE10LT4 Text: D16NE10L N-channel 100V - 0.07Ω - 16A - DPAK STripFET Power MOSFET General features Type VDSSS RDS on ID D16NE10L 100V <0.10Ω 16A 3 • Avalanche rugged technology ■ Low gate charge ■ High current capability ■ 175°C operating temperature	Original	PDF	STD16NE10L D16NE10L JESD97 STD16NE10L STD16NE10LT4
Untitled Abstract: No abstract text available Text: D16NE10L N-channel 100V - 0.07Ω - 16A - DPAK STripFET Power MOSFET General features Type VDSSS RDS on ID D16NE10L 100V <0.10Ω 16A 3 • Avalanche rugged technology ■ Low gate charge ■ High current capability ■ 175°C operating temperature	Original	PDF	STD16NE10L STD16NE10LT4 D16NEerein
D16NE10L Abstract: JESD97 STD16NE10L STD16NE10LT4 d16n Text: D16NE10L N-channel 100V - 0.07Ω - 16A - DPAK STripFET Power MOSFET General features Type VDSSS RDS on ID D16NE10L 100V <0.10Ω 16A 3 • Avalanche rugged technology ■ Low gate charge ■ High current capability ■ 175°C operating temperature	Original	PDF	STD16NE10L D16NE10L JESD97 STD16NE10L STD16NE10LT4 d16n