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    STMicroelectronics STD16NE06LT4

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    Bristol Electronics STD16NE06LT4 360 6
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    SGS Semiconductor Ltd STD16NE06L

    N-CHANNEL 60V-0.06 OHM-16A DPAK STRIPFET POWER MOSFET Power Field-Effect Transistor, 16A I(D), 60V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
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    ComSIT USA STD16NE06L 214
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    D16NE06

    Abstract: D16NE06L ST16NE06 STD16NE06L-1
    Text: D16NE06L-1  N - CHANNEL 60V - 0.07 Ω - 16A - TO-251 STripFET ” POWER MOSFET PRELIMINARY DATA T YPE ST D16NE06L-1 • ■ ■ ■ ■ V DSS R DS o n ID 60 V < 0.085 Ω 16 A TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED


    Original     		PDF STD16NE06L-1 O-251 D16NE06L-1 D16NE06 D16NE06L ST16NE06 STD16NE06L-1