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    D1345 Search Results

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    D1345 Price and Stock

    JW Winco Inc 50.1-ND-13-4.5

    MAGNET 0.512"D X 0.177"THICK RND
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    DigiKey 50.1-ND-13-4.5 Box 1
    • 1 $3.89
    • 10 $3.89
    • 100 $3.89
    • 1000 $3.89
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    JW Winco Inc 50.2-ND-13-4.5-M3

    MAGNET 0.512"D X 0.177"THICK RND
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    DigiKey 50.2-ND-13-4.5-M3 Box 1
    • 1 $4.43
    • 10 $4.43
    • 100 $4.43
    • 1000 $4.43
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    Samtec Inc FFSD-20-D-13.45-01-N

    Cable Assembly Flat Ribbon 0.341m 30AWG 40 POS IDC Connector to 40 POS IDC Connector F-F IDT-IDT Bulk - Bulk (Alt: FFSD-20-D-13.45-01)
    Free Sample
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    Avnet Americas FFSD-20-D-13.45-01-N Bulk 1
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    Master Electronics FFSD-20-D-13.45-01-N
    • 1 -
    • 10 $30.15
    • 100 $17.28
    • 1000 $15.59
    • 10000 $13.78
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    Sager FFSD-20-D-13.45-01-N
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    Skyworks Solutions Inc SI5341B-D13453-GM

    Clock Generators & Support Products Ultra low-jitter, 10-output, any-frequency (< 350 MHz), any output clock generator
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SI5341B-D13453-GM
    • 1 -
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    • 1000 $17.5
    • 10000 $17.5
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    Richardson RFPD SI5341B-D13453-GM 1
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    Skyworks Solutions Inc SI5341A-D13451-GM

    Clock Generators & Support Products Ultra low-jitter, 10-output, any-frequency (< 1028 MHz), any output clock generator
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SI5341A-D13451-GM
    • 1 -
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    • 1000 $20.13
    • 10000 $20.13
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    Richardson RFPD SI5341A-D13451-GM 1
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    Find more D1345 price and stock on Findchips.com

    D1345 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PA1911

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1911 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm FEATURES 0.16+0.1 –0.06 +0.1 0.65–0.15 0.32 +0.1 –0.05 6 5 4 1 2 3 1.5 2.8 ±0.2 The µPA1911 is a switching device which can be driven


    Original     		PDF PA1911 PA1911

    PA1855

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    DS1345

    Abstract: DS1345AB DS1345Y DS1334
    Text: DS1345Y/AB PRELIMINARY DS1345Y/AB 1024K Nonvolatile SRAM with Battery Monitor FEATURES PIN ASSIGNMENT • Built–in lithium battery provides more than 10 years of data retention • Data is automatically protected during VCC power loss • Power supply monitor resets processor when VCC


    Original     		PDF DS1345Y/AB 1024K 24rature DS13345Y/AB D1345Y/AB DS34PIN DS1345 DS1345AB DS1345Y DS1334

    C461B

    Abstract: D1162 B11B6
    Text: 11 11111111 1 1 111111111111111111111111111111234567894A1 1 1 BCDEFC1 2 1212111 21345164789AB1C9DABE1F112111 1 1!31"1 21F3FE1111 F1!"#8$1 2 12A#1C$$%&1%' % 1D%*%1


    Original     		PDF 111111111111111111111111111111234567894A1 21345164789AB1C9DABE1F DA7B2011 97214C12 19D11 -1C98B1 971CB911 81CB911 -1C98B1B2, C461B D1162 B11B6

    PA1911

    Abstract: D1345
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1911 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION FEATURES 0.16+0.1 –0.06 +0.1 0.65–0.15 0.32 +0.1 –0.05 • Can be driven by a 2.5-V power source • Low on-state resistance


    Original     		PDF PA1911 PA1911 D1345

    PA1855

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1855 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1855 is a switching device which can be driven directly by a 2.5 V power source. The µPA1855 features a low on-state resistance and


    Original     		PDF PA1855 PA1855 PA1855GR-9JG

    DS1345

    Abstract: DS1345BL DS1345YL
    Text: DS1345YL/BL DS1345YL/BL 1024K Nonvolatile SRAM with Battery Monitor NOT RECOMMENDED FOR NEW DESIGNS. SEE DS1345Y/AB DATA SHEET. FEATURES PIN ASSIGNMENT • Built–in lithium battery provides more than 10 years of data retention • Data is automatically protected during VCC power


    Original     		PDF DS1345YL/BL 1024K DS1345Y/AB DS1345TT­ D1345YL/BL DS1345 DS1345BL DS1345YL

    D1345

    Abstract: MJ5025 NP12N06HLB NP12N06ILB
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP12N06HLB, NP12N06ILB SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. PART NUMBER PACKAGE


    Original     		PDF NP12N06HLB, NP12N06ILB O-251 NP12N06HLB O-252 O-251) D1345 MJ5025 NP12N06HLB NP12N06ILB

    PA1855

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1855 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1855 is a switching device which can be driven directly by a 2.5 V power source. The µPA1855 features a low on-state resistance and


    Original     		PDF PA1855 PA1855

    DVP-40EH

    Abstract: DVP-10SX DVP28SV11R2 DVP-32EH DVP14Ec DVP80EH00R3 DVP40es DVP-14SS DVP-08SN DVP64EH00R3
    Text: DVP-PLC Application Manual Programming Industrial Automation Headquarters Delta Electronics, Inc. Taoyuan Technology Center No.18, Xinglong Rd., Taoyuan City, Taoyuan County 33068, Taiwan TEL: 886-3-362-6301 / FAX: 886-3-371-6301 Asia Delta Electronics (Jiangsu) Ltd.


    Original     		PDF 113-API API156 296-API DVP-40EH DVP-10SX DVP28SV11R2 DVP-32EH DVP14Ec DVP80EH00R3 DVP40es DVP-14SS DVP-08SN DVP64EH00R3

    D1345

    Abstract: NP24N06HLB NP24N06ILB
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP24N06HLB, NP24N06ILB SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. PART NUMBER PACKAGE


    Original     		PDF NP24N06HLB, NP24N06ILB O-251 NP24N06HLB O-252 O-251) D1345 NP24N06HLB NP24N06ILB

    PA1911

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    equivalent transistor D1555

    Abstract: transistor d1555 transistor d1047 d1555 transistor TRANSISTOR DATASHEET D1555 delta plc DVP 14SS DVP-40EH DVP-10SX d1555 D1557
    Text: PLC PLC DVP-PLC Application Manual 【Programming】 Table of Contents Chapter 1 Basic Principles of PLC Ladder Diagram Foreword: Background and Functions of PLC . 1-1 1.1 The Working Principles of Ladder Diagram . 1-1


    Original     		PDF 32-bit 32-bit 16-bit K100000 equivalent transistor D1555 transistor d1555 transistor d1047 d1555 transistor TRANSISTOR DATASHEET D1555 delta plc DVP 14SS DVP-40EH DVP-10SX d1555 D1557

    DVP-10SX

    Abstract: DVP-14SS delta plc DVP 14SS DVP-32EH DVP-80EH DVP-64EH DVP-32ES DVP-48EH DVP-60ES DVP-20EX
    Text: PLC www.delta.com.tw/industrialautomation PLC ASIA Delta Electronics, Inc. Taoyuan1 31-1, Xingbang Road, Guishan Industrial Zone, Taoyuan County 33370, Taiwan, R.O.C. TEL: 886-3-362-6301 / FAX: 886-3-362-7267 Delta Electronics Jiang Su Ltd. Wujiang Plant3


    Original     		PDF K100000 DVP-10SX DVP-14SS delta plc DVP 14SS DVP-32EH DVP-80EH DVP-64EH DVP-32ES DVP-48EH DVP-60ES DVP-20EX

    vqc 10 d

    Abstract: 34-PIN DS1345 DS1345BL DS1345YL Lithium Battery Protection Circuit for Battery P
    Text: DS1345YL/BL DS1345YL/BL DALLAS SEMICONDUCTOR 1024K Nonvolatile SRAM with Battery M onitor NOT RECOMMENDED FOR NEW DESIGNS. SEE DS1345Y/AB DATA SHEET. FEATURES PIN ASSIGNMENT • B u ilt-in lithium b a tte ry p ro v id e s m o re th a n 10 ye a rs of d a ta re tentio n


    OCR Scan     		PDF DS1345YLVBL DS1345YL/BL 1024K DS1345Y/AB DS1345jTTj-| D1345YL/BL 34-PIN 68-pin vqc 10 d DS1345 DS1345BL DS1345YL Lithium Battery Protection Circuit for Battery P

    Untitled

    Abstract: No abstract text available
    Text: DS1345Y/AB P R E L IM IN A R Y DS1345Y/AB DALLAS 1024K Nonvolatile SRAM with Battery Monitor SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Replaces 128K x R volatile static RAM or EEPROM


    OCR Scan     		PDF DS1345Y/AB 1024K DS1345 34-pin DS13345Y/AB D1345Y/AB 68-pin 34P-SM

    NP24N06HLB

    Abstract: NP24N06ILB MOS 6502
    Text: PRELIMINARY PRODUCT INFORMATION M O S Field Effect PowerTransistor N P 2 4 N 0 6 H L B ,N P 2 4 N 0 6 1 L B SW ITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS in millimeter DESCRIPTION This product is N-Channel MOS Field Effect Transistor de­


    OCR Scan     		PDF NP24N06HLB NP24N061LB 70mfi 90mi2 860pF O-251 NP24N06ILB O-252 MOS 6502

    D1345

    Abstract: 34-PIN DS1345 DS1345AB DS1345Y DS1345Y-70 monitor btc
    Text: D S 1345Y /A B P R E L IM IN A R Y l% A I I j l o D S 1 3 4 5 Y /A B 10 2 4 K U A L L A 9 Nonvolatile SR A M w jtl1 Battery Monitor s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • Built-in lithium battery provides more than 10 years of data retention NC


    OCR Scan     		PDF DS1345Y/AB 1024K 34-pin Ebmi30 DS13345Y/AB D1345Y/AB 68-pin 34P-SMT-3 D1345 DS1345 DS1345AB DS1345Y DS1345Y-70 monitor btc

    DS1345

    Abstract: DS1345BL DS1345YL
    Text: DS1345YL/BL •»A a ■ DS1345YL/BL 1024K Nonvolatile SRAM with Battery Monitor s a U A L L A O s e m ic o n d u c t o r NOT RECOMMENDED FOR NEW DESIGNS. SEE DS1345Y/AB DATA SHEET. FEATURES PIN ASSIGNMENT • B u ilt-in lithium battery provides more than 10 years of


    OCR Scan     		PDF DS1345YL7BL DS1345YL/BL 1024K DS1345Y/AB D1345YL/BL 34-PIN 68-pin DS1345 DS1345BL DS1345YL

    Untitled

    Abstract: No abstract text available
    Text: DS1345YL/BL •»A a ■ DS1345YL/BL Nonvolatile SRAM with Battery Monitor s a 1 024K U A L L A O s e m ic o n d u c t o r NOT RECOMMENDED FOR NEW DESIGNS. SEE DS1345Y/AB DATA SHEET. FEATURES PIN ASSIGNMENT • B u ilt-in lithium battery provides more than 10 years of


    OCR Scan     		PDF DS1345YL7BL DS1345YL/BL 1024K DS1345Y/AB D1345YL/BL 34-PIN 68-pin

    nec 501 t

    Abstract: NP12N06HLB NP12N06ILB 2130m
    Text: PRELIMINARY PRODUCT INFORMATION M O S Field Effect Power Transistor NP12N06HLB,NP12N06ILB SW ITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION in millimeter This product is N-Channel MOS Field Effect Transistor de­ 2.3±0.2 signed for high current switching applications.


    OCR Scan     		PDF NP12N06HLB NP12N06ILB 100mQ 130mQ 570pF O-251 NP12N06ILB O-252 nec 501 t 2130m

    Untitled

    Abstract: No abstract text available
    Text: DATA SH EET MOS FIELD EFFECT TRANSISTOR / ¿ P A 1 9 1 1 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The jtiPAI 911 PACKAGE DRAWING Unit : mm is a switching device which can be driven


    OCR Scan     		PDF uPA1911 D13455EJ1V0DS00 PA1911

    GFB7400D

    Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
    Text: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SH EE T MOS FIELD EFFECT TRANSISTOR _¿ ¿ P A 1 8 5 5 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The ,uPA1855 is a switching device which can be driven directly by a 2.5 V power source.


    OCR Scan     		PDF uPA1855 D13454EJ1V0DS00 PA1855