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    NP12N06ILB Search Results

    NP12N06ILB Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NP12N06ILB NEC SWITCHING N-CHANNEL POWER MOS FET Original PDF
    NP12N06ILB NEC SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Scan PDF

    NP12N06ILB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D1345

    Abstract: MJ5025 NP12N06HLB NP12N06ILB
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP12N06HLB, NP12N06ILB SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. PART NUMBER PACKAGE


    Original
    PDF NP12N06HLB, NP12N06ILB O-251 NP12N06HLB O-252 O-251) D1345 MJ5025 NP12N06HLB NP12N06ILB

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original
    PDF

    TO220-SMD

    Abstract: TO-220SMD TO220SMD NP55N06ELD STB80N06-10
    Text: H I G H T E M P E R AT U R E N C H A N N E L P O W E R M O S F E T S NP SERIES • MAXIMUM JUNCTION TEMPERATURE OF 175˚C FUNCTIONAL EQUIVALENTS • DRAIN CURRENTS FROM 10A TO 84A WITH POWER DISSIPATION UP TO 190W • LOW AND HIGH VOLTAGE VERSIONS, UP TO 450V


    Original
    PDF BUK465-100A BUK466-100A BUK565-100A BUK7608-55 BUK7614-55 BUK7618-55 BUK7620-55 BUK7624-55 BUK7628-5 BUK7635-55 TO220-SMD TO-220SMD TO220SMD NP55N06ELD STB80N06-10

    TO-252 MOSFET p channel

    Abstract: NP80N03CLE NP80N03DLE NP80N03ELE NP80N04CHE NP80N04DHE NP80N04EHE NP84N04CHE NP84N04DHE NP84N04EHE
    Text: Power house NP-Series 4/99 l TJ, MAX = 175° C l Ultra low On-Resistance RDS ON l Low Gate-Charge l Avalanche Energy rated MOSFET by NEC: W e l l - b u i l t Our hotheads can take the heat. Up to 175° C. Target Market and Applications l Automotive - Electric Power Steering


    Original
    PDF NL-5612 S-18322 F-78142 E-28007 NP-S-NEWS109V30 TO-252 MOSFET p channel NP80N03CLE NP80N03DLE NP80N03ELE NP80N04CHE NP80N04DHE NP80N04EHE NP84N04CHE NP84N04DHE NP84N04EHE

    TO-252 MOSFET p channel

    Abstract: nec 288 powermosfet Gate Drive STR 1504 TO-262 MOSFET NP80N03CLE NP80N03DLE NP80N04CHE NP80N04DHE NP84N04CHE
    Text: Power house NP-Series Q3/2001 ● TJ, MAX = 175° C ● Ultra low On-Resistance RDS ON ● Low Gate-Charge ● Avalanche Energy rated MOSFET by NEC: W e l l - b u i l t Our hotheads can take the heat. Up to 175° C. Target Market and Applications l Automotive


    Original
    PDF Q3/2001 NL-5612 S-18322 F-78142 E-28007 NP-S-NEWS071V50 TO-252 MOSFET p channel nec 288 powermosfet Gate Drive STR 1504 TO-262 MOSFET NP80N03CLE NP80N03DLE NP80N04CHE NP80N04DHE NP84N04CHE

    nec 501 t

    Abstract: NP12N06HLB NP12N06ILB 2130m
    Text: PRELIMINARY PRODUCT INFORMATION M O S Field Effect Power Transistor NP12N06HLB,NP12N06ILB SW ITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION in millimeter This product is N-Channel MOS Field Effect Transistor de­ 2.3±0.2 signed for high current switching applications.


    OCR Scan
    PDF NP12N06HLB NP12N06ILB 100mQ 130mQ 570pF O-251 NP12N06ILB O-252 nec 501 t 2130m