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    IDB10S60C

    Abstract: PG-TO220-3-45 D10S60C JESD22
    Text: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDB10S60C D10S60C IDB10S60C PG-TO220-3-45 D10S60C JESD22

    D10S60C

    Abstract: IDH10S60C JESD22
    Text: IDH10S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDH10S60C PG-TO220-2 D10S60C D10S60C IDH10S60C JESD22

    Untitled

    Abstract: No abstract text available
    Text: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary VDC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDB10S60C PG-TO263-3-2) D10S60C

    D10S60C

    Abstract: IDB10S60C JESD22 D10S60
    Text: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDB10S60C PG-TO220-3-45) D10S60C D10S60C IDB10S60C JESD22 D10S60

    D10S60C

    Abstract: IDT10S60C JESD22
    Text: IDT10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDT10S60C PG-TO220-2-2 D10S60C PG-TO220-2-2: D10S60C IDT10S60C JESD22

    d10s60c

    Abstract: No abstract text available
    Text: IDT10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDT10S60C PG-TO220-2-2 IDT10S60C PG-TO220-2-2 D10S60C

    Untitled

    Abstract: No abstract text available
    Text: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDB10S60C PG-TO220-3-45 D10S60C

    Untitled

    Abstract: No abstract text available
    Text: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDB10S60C PG-TO220-3-45) D10S60C

    d10s60c

    Abstract: W6015 IDT10S60C JESD22
    Text: IDT10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDT10S60C PG-TO220-2-2 D10S60C d10s60c W6015 IDT10S60C JESD22

    Untitled

    Abstract: No abstract text available
    Text: IDT10S60C 2nd Generation thinQ! SiC Schottky Diode Features Product Summary V DC 600 V • Switching behavior benchmark Qc 24 nC • No reverse recovery/ No forward recovery I F @ T C < 140 °C 10 A I F @ T C < 100 °C 15 A • Revolutionary semiconductor material - Silicon Carbide


    Original     		PDF IDT10S60C PG-TO220-2-2 20mA2)

    Untitled

    Abstract: No abstract text available
    Text: IDH10S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDH10S60C IDH10S60C PG-TO220-2 D10S60C

    D10S60C

    Abstract: No abstract text available
    Text: IDH10S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDH10S60C PG-TO220-2 D10S60C D10S60C

    Untitled

    Abstract: No abstract text available
    Text: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDB10S60C D10S60C