Untitled
Abstract: No abstract text available
Text: Digital I/O Slaves Units with Clamp Terminals CRT1-@D08SL -1 /@D16SL(-1) Screw-less Terminal Wiring Further Reduces Wiring Work and Saves Labor at the Production Site. • Screw-less (M3) design reduces the need for extra tightening. • Removable terminal block gives powerful support to maintenance work.
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Original
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D08SL
D16SL
AWG24
AWG16
CRT1-ID08SL
CRT1-ID08SL-1
CRT1-OD08SL
CRT1-OD08SL-1
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PDF
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dcn4
Abstract: AWG16
Text: Digital I/O Slaves Units with Clamp Terminals CRT1-@D08SL -1 /@D16SL(-1) Screw-less Terminal Wiring Further Reduces Wiring Work and Saves Labor at the Production Site. • Screw-less (M3) design eliminates the need for extra tightening. • Removable terminal block gives powerful support to maintenance work.
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Original
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D08SL
D16SL
AWG24
AWG16
CRT1-ID08SL
CRT1-ID08SL-1
CRT1-OD08SL
CRT1-OD08SL-1
dcn4
AWG16
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PDF
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SRT2-ID16-1
Abstract: No abstract text available
Text: CompoBus/S New Products • Programmable Slaves • SYSMAC CPM2C CPU Units with CompoBus/S Master Functions • Waterproof Terminals • Sensor Terminals • Remote I/O Modules Cat. No. Q103-E1-7 Maximum Communications Cycle Time of Only 1 ms Long-distance Communications Mode
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Q103-E1-7
SRT2-ID16-1
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PDF
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Untitled
Abstract: No abstract text available
Text: IDT08S60C 2nd Generation thinQ! SiC Schottky Diode Features Product Summary V DC 600 V • Switching behavior benchmark QC 19 nC • No reverse recovery/ No forward recovery I F @ T C < 140 °C 8 A • Temperature independent switching behavior I F @ T C < 100 °C
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Original
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IDT08S60C
PG-TO220-2-2
20mA2)
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PDF
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D08S60C
Abstract: IDH08S60C JESD22
Text: IDH08S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 19 nC IF 8 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior
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Original
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IDH08S60C
PG-TO220-2
D08S60C
D08S60C
IDH08S60C
JESD22
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PDF
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Untitled
Abstract: No abstract text available
Text: IDT08S60C 2nd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide V DC 600 V • Switching behavior benchmark Qc 19 nC • No reverse recovery/ No forward recovery IF 8 A • No temperature influence on the switching behavior
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Original
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IDT08S60C
IDT08S60C
PG-TO220-2-2
D08S60C
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PDF
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bdl 494
Abstract: No abstract text available
Text: Cat. No. W457-E1-07 CRT1 Series CompoNet Slave Units and Repeater Unit OPERATION MANUAL CRT1 Series CompoNet Slave Units and Repeater Unit Operation Manual Revised October 2009 iv Notice: OMRON products are manufactured for use according to proper procedures by a qualified operator
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Original
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W457-E1-07
847-843-7900/Fax:
6835-3011/Fax:
21-5037-2222/Fax:
bdl 494
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PDF
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D08S60C
Abstract: No abstract text available
Text: IDH08S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 19 nC IF 8 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior
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Original
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IDH08S60C
IDH08S60C
PG-TO220-2
D08S60C
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PDF
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d08s60
Abstract: diode 8a 600v
Text: SDT08S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 24 nC • No reverse recovery
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Original
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SDT08S60
PG-TO220-2-2.
Q67040S4647
D08S60
d08s60
diode 8a 600v
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PDF
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CRT1-ATT03
Abstract: omron DRS1-T
Text: Peripheral Devices • Communications Cables Name Appearance Specification Model 4-conductor flat cable UL2555 Length: 100 m Conductor diameters: 0.75 mm2 x 2, 0.5 mm2 × 2 Flat Cable I DCA4-4F10 Standards UC Note. Also can be used with general-purpose round cable I (VCTF 2-conductor cable).
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Original
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UL2555)
DCA4-4F10
CRT1-ATT03
omron
DRS1-T
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PDF
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D08S60C
Abstract: IDT08S60C JESD22 D08S60 D08S
Text: IDT08S60C 2nd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide V DC 600 V • Switching behavior benchmark Qc 19 nC • No reverse recovery/ No forward recovery IF 8 A • No temperature influence on the switching behavior
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Original
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IDT08S60C
PG-TO220-2-2
D08S60C
D08S60C
IDT08S60C
JESD22
D08S60
D08S
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PDF
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D08S60C
Abstract: IDT08S60C JESD22
Text: IDT08S60C 2nd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide V DC 600 V • Switching behavior benchmark Qc 19 nC • No reverse recovery/ No forward recovery IF 8 A • No temperature influence on the switching behavior
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Original
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IDT08S60C
PG-TO220-2-2
D08S60C
D08S60C
IDT08S60C
JESD22
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PDF
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Schottky diode TO220
Abstract: Q67040S4647 SDT08S60 D08S60
Text: SDT08S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 24 nC • No reverse recovery
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Original
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SDT08S60
PG-TO220-2-2.
D08S60
Q67040S4647
PG-TO-220-2-2
Schottky diode TO220
Q67040S4647
SDT08S60
D08S60
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PDF
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Schottky diode TO220
Abstract: SDT08S60 6260 thermal infineon 6260 Single Schottky diode TO-220 Q67040S4647
Text: SDT08S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 24 nC • No reverse recovery
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Original
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SDT08S60
P-TO220-2-2.
D08S60
Q67040S4647
Schottky diode TO220
SDT08S60
6260 thermal
infineon 6260
Single Schottky diode TO-220
Q67040S4647
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PDF
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|
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Untitled
Abstract: No abstract text available
Text: IDH08S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 19 nC IF 8 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior
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Original
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IDH08S60C
PG-TO220-2
D08S60C
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PDF
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DRS1-T
Abstract: DCA4-4F10 vctf cable D08S DCA5-4F10 CRT1-ATT03 omron
Text: Peripheral Devices • Communications Cables Name Appearance Specification Model 4-conductor flat cable UL2555 Length: 100 m Conductor diameters: 0.75 mm2 x 2, 0.5 mm2 × 2 Flat Cable I Standards DCA4-4F10 UC Sheathed 4-conductor flat cable (UL compliant)
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Original
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UL2555)
DCA4-4F10
DCA5-4F10
DRS1-T
DCA4-4F10
vctf cable
D08S
DCA5-4F10
CRT1-ATT03
omron
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PDF
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D08S120
Abstract: IDH08S120 JESD22
Text: IDH08S120 thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 1200 600 V • No reverse recovery / No forward recovery QC 3.2 27 nC • Temperature independent switching behavior IF; TC< 130 °C
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Original
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IDH08S120
PG-TO220-2
IDH08Sngerous
D08S120
IDH08S120
JESD22
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PDF
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Untitled
Abstract: No abstract text available
Text: 0.031 [0O.8O] A -| |—— .079 [2.00] 4-4- o o o o o o o o o o o o o o o o o o o o o o oooooooooooooooooooooooo .079 [2.00] RECOMMENDED PCB LAYOUT B ±.008[±0.20] C ±.008[±0.20] — .173 [4.40] i —.079 [2.00] .157 [4.00]- t V .220 [5.60] _ l TnniTTTTTTT^^
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OCR Scan
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SBH21-NBPN-D_
PINM1095,
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PDF
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Untitled
Abstract: No abstract text available
Text: Digital I/O Slave Units with e-CON Connector Vertical type CRT1-D08S(-1)/D08S(-1) A vertical slave unit of little wiring and size Industrial standard e-CON connectors allow direct connection of the unit to sensing devices without use of terminal blocks. This minimizes
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Original
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CRT1-VID08S
/VOD08S
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PDF
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InSb spectral response
Abstract: BARNES ENGINEERING metal detectors circuit D13E metal detector 140C D03E D04EJ D05E Barnes Engineering Company
Text: F D P CORP. BARNES ENGRG E D 0 CO RP/ BARNES ENGRG _ _4 5 C 0 0 4 5 2 4S DE .jB O S T b S S D . T-41-4r 0D0D4Sa 0 |~ Bulletin 2-312 BARNES Barnes Engineering Company 30 Commerce Road Stamford, Connecticut 06904 Telephone 203 348-5381 The most sensitive detectors in the near infrared
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OCR Scan
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T-41-41'
D04EJ.
D06EJ.
T-41-41-
D07EJ,
13-Dewar
Telex/965921
D155S.
InSb spectral response
BARNES ENGINEERING
metal detectors circuit
D13E
metal detector
140C
D03E
D04EJ
D05E
Barnes Engineering Company
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PDF
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D08S120
Abstract: IDH08S120 JESD22
Text: IDH08S120 thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • Temperature independent switching behavior V DC 1200
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Original
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IDH08S120
PG-TO220-2
D08S120
IDH08S120
JESD22
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PDF
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Untitled
Abstract: No abstract text available
Text: SDT08S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 24 nC • No reverse recovery
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Original
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SDT08S60
PG-TO220-2-2.
Q67040S4647
D08S60
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PDF
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Untitled
Abstract: No abstract text available
Text: IDH08S120 thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 1200 600 V • No reverse recovery / No forward recovery QC 3.2 27 nC • Temperature independent switching behavior IF; TC< 130 °C
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Original
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IDH08S120
PG-TO220-2
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PDF
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dcn4
Abstract: D08S CRT1-ATT02 omron
Text: Digital I/O Slave Units with e-CON Connector Vertical type CRT1-D08S(-1)/D08S(-1) A vertical slave unit of little wiring and size Industrial standard e-CON connectors allow direct connection of the unit to sensing devices without use of terminal blocks. This minimizes
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Original
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CRT1-VID08S
/VOD08S
dcn4
D08S
CRT1-ATT02
omron
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PDF
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