D06S60C
Abstract: IDV06S60C Schottky diode TO220 JESD22 d06s60
Text: S iC Silicon Carbide Diode 2 n d G e n e r a t io n t h in Q ! 2nd Generation thinQ!™ SiC Schottky Diode IDV06S60C Data Sheet Rev. 2.0, 2010-01-14 Final In d u s tr ia l & M u l ti m a r k e t 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV06S60C Description
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Original
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IDV06S60C
IDVxxS60C
O220FullPAK
D06S60C
IDV06S60C
Schottky diode TO220
JESD22
d06s60
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PDF
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D06S60C
Abstract: No abstract text available
Text: IDT06S60C 2nd generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior
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Original
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IDT06S60C
PG-TO220-2-2
IDT06S60C
PG-TO220-2-2
D06S60C
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PDF
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IDT06S60C
Abstract: D06S60C
Text: IDT06S60C 2nd generation thinQ! SiC Schottky Diode Features Product Summary V DC 600 V Qc 15 nC • No reverse recovery/ No forward recovery I F @ T C < 140°C 6 A • Temperature independent switching behavior I F @ T C < 100°C 9 A • Revolutionary semiconductor material - Silicon Carbide
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IDT06S60C
PG-TO220-2-2
20mA2)
IDT06S60C
D06S60C
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PDF
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D06S60C
Abstract: No abstract text available
Text: IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery VDC 600 V Qc 15 nC IF 6 A • No temperature influence on the switching behavior
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Original
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IDB06S60C
PG-TO263-3-2)
D06S60C
D06S60C
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PDF
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D06S60C
Abstract: No abstract text available
Text: IDH06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior
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Original
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IDH06S60C
PG-TO220-2
D06S60C
D06S60C
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PDF
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D06S60C
Abstract: IDT06S60C JESD22 d06s60
Text: IDT06S60C 2nd generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior
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Original
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IDT06S60C
PG-TO220-2-2
D06S60C
PG-TO220-2-2:
D06S60C
IDT06S60C
JESD22
d06s60
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PDF
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D06S60C
Abstract: IDH06S60C JESD22 60-06A D06S60
Text: IDH06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior
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Original
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IDH06S60C
PG-TO220-2
D06S60C
D06S60C
IDH06S60C
JESD22
60-06A
D06S60
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PDF
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Untitled
Abstract: No abstract text available
Text: S iC Silicon Carbide Diode 2 n d G e n e r a t io n t h in Q ! 2nd Generation thinQ!™ SiC Schottky Diode IDV06S60C Data Sheet Rev. 2.0, 2010-01-14 Final In d u s tr ia l & M u l ti m a r k e t 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV06S60C Description
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Original
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IDV06S60C
IDVxxS60C
O220FullPAK
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PDF
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D06S60C
Abstract: IDB06S60C JESD22 smd diode MARKING F6 SMD F6 DIODE Diode smd f6
Text: IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior
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Original
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IDB06S60C
D06S60C
D06S60C
IDB06S60C
JESD22
smd diode MARKING F6
SMD F6 DIODE
Diode smd f6
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D06S60C
Abstract: Diode smd f6 schottky IDB06S60C JESD22 smd diode F6 Diode smd f6 SMD F6 DIODE smd diode MARKING F6
Text: IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior
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Original
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IDB06S60C
PG-TO220-3-45)
D06S60C
D06S60C
Diode smd f6 schottky
IDB06S60C
JESD22
smd diode F6
Diode smd f6
SMD F6 DIODE
smd diode MARKING F6
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D06S60C
Abstract: d06s60 IDT06S60C JESD22 diode c25
Text: IDT06S60C 2nd generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior
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Original
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IDT06S60C
PG-TO220-2-2
D06S60C
D06S60C
d06s60
IDT06S60C
JESD22
diode c25
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PDF
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D06S60C
Abstract: No abstract text available
Text: IDH06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior
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Original
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IDH06S60C
IDH06S60C
PG-TO220-2
D06S60C
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PDF
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Untitled
Abstract: No abstract text available
Text: IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior
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Original
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IDB06S60C
PG-TO220-3-45)
D06S60C
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PDF
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smd diode MARKING F6
Abstract: Diode smd f6 schottky d06s60 SMD F6 DIODE D06S60C smd diode F6
Text: IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior
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Original
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IDB06S60C
PG-TO220-3-45
D06S60C
smd diode MARKING F6
Diode smd f6 schottky
d06s60
SMD F6 DIODE
D06S60C
smd diode F6
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PDF
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