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    IDB06S60C Search Results

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    IDB06S60C Price and Stock

    Rochester Electronics LLC IDB06S60CATMA2

    DIODE SIL CARB 600V 6A TO263-3-2
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    DigiKey IDB06S60CATMA2 Bulk 38,373 127
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    Infineon Technologies AG IDB06S60C

    DIODE SIL CARB 600V 6A TO263-3-2
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    DigiKey IDB06S60C Reel 1,000
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    ComSIT USA IDB06S60C 35
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    Infineon Technologies AG IDB06S60CATMA2

    DIODE SIL CARB 600V 6A TO263-3-2
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    DigiKey IDB06S60CATMA2 Reel
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    Avnet Americas IDB06S60CATMA2 Reel 4 Weeks 153
    • 1 $2.39
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    • 100 $2.14
    • 1000 $1.94
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    Rochester Electronics IDB06S60CATMA2 190,666 1
    • 1 $2.39
    • 10 $2.39
    • 100 $2.25
    • 1000 $2.03
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    Infineon Technologies AG IDB06S60CATMA1

    Diode Schottky 600V 6A 3-Pin(2+Tab) D2PAK
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    Verical IDB06S60CATMA1 369 13
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    Arrow Electronics IDB06S60CATMA1 Cut Strips 369 26 Weeks 1
    • 1 $0.5701
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    • 100 $0.5343
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    Chip1Stop IDB06S60CATMA1 369
    • 1 $0.761
    • 10 $0.5611
    • 100 $0.5343
    • 1000 $0.5254
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    IDB06S60C Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IDB06S60C Infineon Technologies Silicon Carbide Schottky Diodes - NEW 3G now available!; Package: PG-TO220-3; Technology: thinQ! 2G; V: 600.0 V; IF (typ): 6.0 A; QC (typ): 15.0 nC; Package: D2PAK (TO-263) Original PDF
    IDB06S60CATMA2 Infineon Technologies Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 600V 6A TO263-3-2 Original PDF

    IDB06S60C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D06S60C

    Abstract: No abstract text available
    Text: IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery VDC 600 V Qc 15 nC IF 6 A • No temperature influence on the switching behavior


    Original     		PDF IDB06S60C PG-TO263-3-2) D06S60C D06S60C

    D06S60C

    Abstract: IDB06S60C JESD22 smd diode MARKING F6 SMD F6 DIODE Diode smd f6
    Text: IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDB06S60C D06S60C D06S60C IDB06S60C JESD22 smd diode MARKING F6 SMD F6 DIODE Diode smd f6

    D06S60C

    Abstract: Diode smd f6 schottky IDB06S60C JESD22 smd diode F6 Diode smd f6 SMD F6 DIODE smd diode MARKING F6
    Text: IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDB06S60C PG-TO220-3-45) D06S60C D06S60C Diode smd f6 schottky IDB06S60C JESD22 smd diode F6 Diode smd f6 SMD F6 DIODE smd diode MARKING F6

    Untitled

    Abstract: No abstract text available
    Text: IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDB06S60C PG-TO220-3-45) D06S60C

    smd diode MARKING F6

    Abstract: Diode smd f6 schottky d06s60 SMD F6 DIODE D06S60C smd diode F6
    Text: IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDB06S60C PG-TO220-3-45 D06S60C smd diode MARKING F6 Diode smd f6 schottky d06s60 SMD F6 DIODE D06S60C smd diode F6

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


    Original     		PDF

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


    Original     		PDF lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J

    Infineon diffusion solder

    Abstract: Infineon power diffusion process 300v dc 230v ac inverter r2l diode igbt 400V 5A IDV06S60C diode 400V 4A IDW16G65C5 idv02s60c schottky 400v
    Text: 600/650V Silicon Carbide thinQ! Diodes Selection Guide Your way is our way: improve efficiency and solution costs thinQ!™ Silicon Carbide Schottky diodes: more than 10 years experience into Generation 5 650V Advantages of Silicon Carbide over Silicon devices


    Original     		PDF 600/650V SDB06S60 IDD02SG60C IDD03SG60C IDD04SG60C IDD05SG60C IDD06SG60C IDD08SG60C IDD09SG60C IDD10SG60C Infineon diffusion solder Infineon power diffusion process 300v dc 230v ac inverter r2l diode igbt 400V 5A IDV06S60C diode 400V 4A IDW16G65C5 idv02s60c schottky 400v