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    D03SS Search Results

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    D03SS Price and Stock

    MCB Electronics BD-03-SS-R-AU

    1/1ph Deluxe Rack 3kVA
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    DigiKey BD-03-SS-R-AU Bulk 10 1
    • 1 $5401
    • 10 $5401
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    MCB Electronics BD-03-SS-R-IS

    1/1ph Deluxe Rack 3kVA ISO
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    DigiKey BD-03-SS-R-IS Bulk 10 1
    • 1 $6952
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    • 100 $6952
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    Molex DND03SS-M050

    Mic 5P M/Mp 5M 90D Ss Drop |Molex DND03SS-M050
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    Newark DND03SS-M050 Bulk 4
    • 1 $82.13
    • 10 $77.41
    • 100 $64.2
    • 1000 $62.78
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    Molex DND03SS-M020

    Mic 5P M/Mp 2M 90D Ss Drop |Molex DND03SS-M020
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    Newark DND03SS-M020 Bulk 4
    • 1 $57.14
    • 10 $53.85
    • 100 $44.66
    • 1000 $43.68
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    Molex DND03SS-M010

    Mic 5P M/Mp 1M 90D Ss Drop |Molex DND03SS-M010
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    Newark DND03SS-M010 Bulk 4
    • 1 $54.06
    • 10 $48.18
    • 100 $41.42
    • 1000 $39.96
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    D03SS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BSR56

    Abstract: No abstract text available
    Text: • bbS3T31 D03SS33 311 H A P X N AMER PHILIPS/DISCRETE BSR56 BSR57 BSR58 b7E D y v N-CHANNEL FETS Symmetrical silicon n-channel depletion type ju nctio n field-effect transistors in a plastic m icrom iniature envelope intended fo r application in thick and th in -film circuits. The transistors are intended fo r lowpower, chopper or switching applications in industrial service.


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    PDF bbS3T31 D03SS33 BSR56 BSR57 BSR58 Drain-R56 BSR56; BSR57; BSR56

    NB111

    Abstract: NB121 NB211E LB 122 NPN U6501 NB212E
    Text: NATL SEMICOND {DISCRETE} 2fl 650 1130 NATL SEMICOND, Q. z cl CO CM j>i|b S D113 □ QOaSSTa DISCRETE 28C National Semiconductor T - z 35 5 9 3 ? - Z - / T- *• * CM CM CM rCÛ z r* Z CL z NB121,122,123(PNP) 100mA 9eneral purpose transistors (TI package and lead coding


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    PDF bS0113G NB121 100mA 400mV to-92 fcj501130 NB021EV NB211YY NR001E NB111 NB211E LB 122 NPN U6501 NB212E

    qml-38535

    Abstract: GDFP1-F48
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET 15 16 17 REV STATUS OF SHEETS PMIC N/A 18 19 REV SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PREPARED BY DEFENSE SUPPLY CENTER COLUMBUS Joseph A. Kerby STANDARD M ICROCIRCUIT DRAW ING THIS DRAWING IS AVAILABLE


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    PDF 16-bit 10047GÃ qml-38535 GDFP1-F48

    SOT-90B

    Abstract: No abstract text available
    Text: SL5500 SL5501 SL5511 y v OPTOCOUPLERS Optically coupled isolators consisting o f an infrared emitting GaAs diode and a silicon npn photo­ transistor with accessible base. Plastic envelopes. Suitable fo r T TL integrated circuits. Features • High output/input DC current transfer ratio


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    PDF SL5500 SL5501 SL5511 bbS3T31 00355b? SOT-90B

    Untitled

    Abstract: No abstract text available
    Text: H11B1 H11B2 H11B3 O P T O C O U P L E R S Optically coupled isolators consisting o f an infrared emitting GaAs diode and an npn silicon photoDarlington transistor. Features • Very high output/input DC current transfer ratio • Isolation voltage o f 2 kV RMS and 2.82 kV DC


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    PDF H11B1 H11B2 H11B3 0110b bbS3T31 D03SSD4

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI MICROCOMPUTERS 3819 Group SINGLE-CHIP 8-BIT MICROCOMPUTER DESCRIPTION • D-A c o n v e rte -bit X 1 channels The 3819 group is a 8 -bit m icrocom puter based on the 740 fam ily • Z e r o cross detection in p u t. 1 channel


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    PDF 16-channel QQ35540

    40khz ultrasonic transmitter

    Abstract: 40KHZ ULTRASONIC NA01 nb111eh NR001E NB021EY toko k
    Text: Sö NATL SEHICOND {DISCRETE} NA01 NPN , NA02(PNP) 6 5 0 1 1 3 0 NA TL S E M I C O N D , DE I t.SD113G DG3SSS3 (D I S C R E T E ) _28C 35553 D National Semiconductor NA02(PNP) 80 mA complementary power transistors [~1~| package and lead coding features • 20 Volt/800 mA Amp rating


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    PDF SD113G Volt/800 NB111EH/J NA01EG/J NR001E 380mW NR001E 40khz ultrasonic transmitter 40KHZ ULTRASONIC NA01 nb111eh NB021EY toko k

    40khz ultrasonic transmitter

    Abstract: 40KHZ ULTRASONIC NB111 NB111EH "Ultrasonic" "transmitter" 40khz ultrasonic transmitter 12V k 3555 NA01EX NR001E NB021EY
    Text: 20 NATL SEHICOND {DISCRETE} 6501130 NATL SEMICOND, STr z a z a DISCRETE _28C 35553 NA02(PNP) 80 mA complementary power transistors [T~| package and lead coding features • 20 Volt/800 mA Amp rating ■ Low V qe (sat) and V qe (sat) characteristics at §


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    PDF SD113G 800mA Volt/800 NB111EH/J NA01EG/J NR001E NA01EG/J 380mW 40khz ultrasonic transmitter 40KHZ ULTRASONIC NB111 NB111EH "Ultrasonic" "transmitter" 40khz ultrasonic transmitter 12V k 3555 NA01EX NB021EY

    NA72

    Abstract: NB313Y NB022EY NB111EY NB121EY NB123EY NB323Y NR001E transistor A05 2TO220
    Text: ~E0 NATL SEMICOND {DISCRETE} 6501130 a z a c i h - NATL SEMICOND, DE~J t.5 □ 113 0 0G3SSfll fl 28C D ISCRETE 35561 National Semiconductor T ' 2 ? - r < z a. z < Z NA 71 (NPN) NA 7 2 (PNP) ^ AmP com plem entary power tra n sisto rs IT ! packages and lead coding


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    PDF tSD113D O-126 O-220 100mA 200mA NB323Y NA72W NA71W 100pF. NB022EY NA72 NB313Y NB022EY NB111EY NB121EY NB123EY NB323Y NR001E transistor A05 2TO220

    NB111

    Abstract: npn general purpose amplifier E28C nb121
    Text: ~ 2ä NATL SEHICOND {DISCRETE} 650 1130 a. Z a CO CM NATL S E M IC O N D , D E |b s a ii3 Q a a B ssT a 28C 35593 D IS C R E T E National Semiconductor T- r> CM CM NB121,122,123(PNP) 100mA general purpose transistors CM features rCÛ z V» z CL z (TI package and lead coding


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    PDF NB121 100mA 400mV tS0113Q NB021EY NB211YY NR001E NA41U NA42U NB111 npn general purpose amplifier E28C

    m7 smd diodes

    Abstract: TCA605G SIEMENS thyristor transistor smd cr smd transistor m7 2.tn SMD siemens EM 235
    Text: 47E D SIEMENS • B235b05 QDB55b3 £ S IS IE6 SIEMENS AKTIEN6 ESE LLSCHAF 7 = ' i 5 ‘' 0 1C for Inductive Two-Wire Proximity Switches with Short-Circuit Protection TCA 605 Bipolar IC Preliminary Data • • • • • • 5 Operates from 1 V supply voltage upwards


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    PDF B235b05 QDB55b3 Q67000-A8292 P-DSO-16 fl23SbD5 0Q3SS77 T-65-05 fl235b05 m7 smd diodes TCA605G SIEMENS thyristor transistor smd cr smd transistor m7 2.tn SMD siemens EM 235

    capacitor discharge ignition

    Abstract: NB313Y "capacitor discharge ignition" NA61W NA62 Ignition Transformer NB022EY NB123EY NB111 NB32
    Text: NATL SENICOND -CDISCRETE> NATL "äfl SEM ICOND, DF|bSD1130 DISC R ETE 28C 3 5 5 7 7 V/WX National MM Semiconductor J 3 - / / NA61 (NPN) 4 .5 A m p c o m p le m e n ta ry p o w e r tr a n s is to r s NA62(PNP) feature s CO < z IT ! packages and lead coding


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    PDF 003SS77 O-126 O-220 IO11F NB022EY NB123EY NR001E NB113EY NB111EY NB121EY capacitor discharge ignition NB313Y "capacitor discharge ignition" NA61W NA62 Ignition Transformer NB022EY NB123EY NB111 NB32

    zilog 1866

    Abstract: XTAL NTK Z86E04 in 18 pins NTK oscillator 10 MHz 4 pins Z86CCP00ZEM Z86E04 Z86E08 ntk 8mhz 4 pin oscillator ntk 2MHz
    Text: PRELIMINARY C ustom er P rcxjjrem en iSpecification < $ 2 iL C E Z 8 6 E 0 4 /E 0 8 S L 1 866 CMOS Z8 O T P M icro co n tro i a e r FEATURES Part Number ROM Kbytes RAM* (Bytes) Speed (MHz) Z86E08 Z86E04 2 1 125 125 12 8 * General-Purpose • ■ Program Options:


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    PDF Z86E08 Z86E04 18-Pin Z86E04/E08 SL1866 zilog 1866 XTAL NTK Z86E04 in 18 pins NTK oscillator 10 MHz 4 pins Z86CCP00ZEM ntk 8mhz 4 pin oscillator ntk 2MHz

    KM48V2104B

    Abstract: No abstract text available
    Text: KM48V2004BS CMOS DRAM ELECTR O NICS 2 M x 8 Bit C M O S Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


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    PDF KM48V2004BS 16Mx4, 512Kx8) KM48V2104B

    audio power amplifier 500 watt

    Abstract: 3a npn to126 transistor
    Text: ~E0 NATL SEMICOND {DISCRETE} 6501130 a z a c i h- NATL SEMICOND, DE~J t.5 □ 113 0 0G3SSfll fl 28C 35561 D ISCRETE T'2?'// National Semiconductor - r < z a. z < Z NA71 (NPN) NA7 2 (PNP) ^ AmP com plem entary pow er tra n sisto rs IT! packages and lead coding


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    PDF O-126 O-220 100mA 200mA O-126 O-220 D03SS NB022EY NB123EY NR001E audio power amplifier 500 watt 3a npn to126 transistor

    Untitled

    Abstract: No abstract text available
    Text: KM48C2000BS CMOS D R A M ELECTRONICS 2M x 8 Bit C M O S Dynamic RAM with Fast Page Mode DESCRIPTION This is a lamily o1 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


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    PDF KM48C2000BS 16Mx4, 512Kx8) GG3S251

    SOT-90B

    Abstract: No abstract text available
    Text: Product specification Philips Sem iconductors OF4114 Optocoupler FEATURES • High current transfer ratio and low saturation voltage, making the device suitable for use with TTL integrated circuits • Fast switching • High degree of AC and DC insulation 3120 V (RMS and


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    PDF OF4114 E90700 OF4114 OT90B 0110b 0Q3S535 bb53R31 3553b SOT-90B

    2N2222 transistor

    Abstract: k thermocouple amplification circuit diagram ZB50 220V to 12V transformer trim pot 200k Amplifier type K thermocouple k type themocouple 1000VA 2B50 2B50A
    Text: ANALOG DEVICES INC SIE ]> MÊ OfllbflOO 0 0 3 S S Ü 3 S âl • ANA A N A LO G Isolated, Thelinocoupïe D E V IC E S _ Signal Conditioner □ FEATU RES Accepts J , K , T , E , R , S or B Thermocouple Types Internally Provided Cold Junction Compensation


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    PDF 160dB 2B50B) 2N2222 transistor k thermocouple amplification circuit diagram ZB50 220V to 12V transformer trim pot 200k Amplifier type K thermocouple k type themocouple 1000VA 2B50 2B50A

    bc2378

    Abstract: box33c b0345 b0348 b0735 B0346 b073b B0736 b0737 B0633
    Text: This Material Pro Electron Series Copyrighted 3> -i PRO ELECTRON SERIES Bipolar—see page 5-37 for JFET By Type No. Its BC107 Respective BC107A Case Styl« TO-18 TO-18 VCES* VC8 0 (VI Min 50 50 VCEO (V) Min V e BO (V) Min 45 6 45 6 'CES* 'CBO a V CB (Vi


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    PDF tS0113D J15511 SD1130 bc2378 box33c b0345 b0348 b0735 B0346 b073b B0736 b0737 B0633