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    D 2037 TRANSISTOR Search Results

    D 2037 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    D 2037 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3467

    Abstract: 2N3467L 2N3468 2N3468L 2N3647 2N3648
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 October 1999 INCH-POUND MIL-PRF-19500/348E 25 July 1999 SUPERSEDING MIL-S-19500/348D 6 October 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING


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    PDF MIL-PRF-19500/348E MIL-S-19500/348D 2N3467, 2N3467L, 2N3468, 2N3468L, MIL-PRF-19500. 2N3467 2N3467L 2N3468 2N3468L 2N3647 2N3648

    2N4416A JANTX

    Abstract: 2N4416A JANTXV 428F marking 2N4416AUB 2N4416A JANTXV 2n4416A
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 16 August 2006. INCH-POUND MIL-PRF-19500/428G 16 May 2006 SUPERSEDING MIL-PRF-19500/428F 25 May 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, N-CHANNEL SILICON,


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    PDF MIL-PRF-19500/428G MIL-PRF-19500/428F 2N4416A 2N4416AUB, MIL-PRF-19500. 2N4416A JANTX 2N4416A JANTXV 428F marking 2N4416AUB JANTXV 2n4416A

    2N3506

    Abstract: 2N3506A 2N3506AL 2N3506L 2N3507 2N3507A 2N3507AL 2N3507L
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 28 November 2000. INCH-POUND MIL-PRF-19500/349E 28 August 2000 SUPERSEDING MIL-PRF-19500/349D 12 December 1997 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING


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    PDF MIL-PRF-19500/349E MIL-PRF-19500/349D 2N3506, 2N3506A, 2N3506L, 2N3506AL, 2N3507, 2N3507L, 2N3507A, 2N3507AL, 2N3506 2N3506A 2N3506AL 2N3506L 2N3507 2N3507A 2N3507AL 2N3507L

    CIMRF7Z4011

    Abstract: No abstract text available
    Text: Y203-EN2-01.book Seite 253 Montag, 29. März 2004 12:52 12 CIMR-F7Z Varispeed F7 Frequency inverter for full flux vector control Current Vector Control with or without PG Torque Control PID Control Standard LCD operator Fieldbus options: DeviceNet, Profibus, CANOpen


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    PDF Y203-EN2-01 RS485 110KW I23E-EN-01 CIMRF7Z4011

    CIMR-F7Z40151

    Abstract: No abstract text available
    Text: Y203-EN2-02-Katalog.book Seite 269 Mittwoch, 24. Mai 2006 2:22 14 CIMR-F7Z Varispeed F7 The industrial workhorse • • • • • • • • • • • Flux vector control with or without PG Silent operation. No current de-rating in silent mode. Torque control


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    PDF Y203-EN2-02-Katalog RS485 I23E-EN-02 CIMR-F7Z40151

    CIMR-G7C4090

    Abstract: CIMR-G7C4055
    Text: Y203-EN2-02-Katalog.book Seite 249 Mittwoch, 24. Mai 2006 2:22 14 CIMR-G7C Varispeed G7 World first three level inverter architecture • • • • • • • • • • • • • • 3 level control 400 V class Current vector control and V/F with or without PG


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    PDF Y203-EN2-02-Katalog RS-485 I37E-EN-01A CIMR-G7C4090 CIMR-G7C4055

    PA 2027A

    Abstract: LT 450 SL 2040 CT microphone czn-15e SANYO SP d 2037 transistor 2SK156
    Text: SANYO SLM IC O N D LKTO R COKF -liedt D I n i i ’ Ui ’b UUUòd4b 2SK156 S ilicon 2037 N-Channel Junction Fíeld-Effect Transistor Capacitor Microphone Impedance Conversion Applications 540F A B S O LU T E M AXIMUM R A T IN G S /T a = 25°C unit Gate drain voltage


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    PDF 2SK156 IS-126 1S-126A IS-20MA PA 2027A LT 450 SL 2040 CT microphone czn-15e SANYO SP d 2037 transistor 2SK156

    Untitled

    Abstract: No abstract text available
    Text: 0 OPTEK Product Bulletin OPC260 July 1996 NPN Silicon Phototransistor Chip Type OPC260 .040(1.016 SQUARE NOW. .ftl2(.30S) .008(.2037 HOP 71*-y' EMITTER CONTACT ACTIVE - AREA GOLD rfl AL. BASE CONTACT .0035 DIA. D I M E N S I O N S ARE IN I N C t t E S ( I I L L I M E T E R S )


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    PDF OPC260 OPC260

    d 2037 transistor

    Abstract: CAPACITOR MICROPHONE 2SK596 d 2037
    Text: f 2SK596 HI N -C h a n n e l J u n c tio n S ilic o n Field-Effect Transistor 2037 C a p a c it o r M i c r o p h o n e cwi» n p p iiu a ii Features • Especially suited for use in audio, telephone capacitor mlorophonea • Excellent voltage characteristic


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    PDF 2SK596 V100uA 2SX596 15pFtSee Vina10mV 110Hz 4157TA d 2037 transistor CAPACITOR MICROPHONE 2SK596 d 2037

    2SK376

    Abstract: DDD3710 VLN 2003a
    Text: SANYO SEMICONDUCTOR CORP 1B E » 1 i m U l h 0D0S3Û0 2SK376 N-Channel Junction Silicon Field-Effect Transistor 2037 1432A Capacitor Microphone Impedance Conversion Applications Features . Especially suited for use in audio, telephone capacitor microphones.


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    PDF 0D053Ã 2SK376 2SK376 0DGB752 DDD3710 VLN 2003a

    Untitled

    Abstract: No abstract text available
    Text: EMI Common Mode Suppression Inductors D e liv e ry '8* ? one week Siz« Man. H tiq fit A e C D E I .303 7.75 .4 5 0 (11.43) .3 0 0 (7.62) .0 2 7 (.6 9 ) .0 2 0 (.51 ) .5 7 0 (14.46) 2 .360 (9.I4) .550 (13.97) .4 0 0 (10.16) .037 ( .9 4 ) .025 (.6 4 )


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    PDF

    JIS B1181

    Abstract: d 2037 transistor capacitor 0.22mA TRANSISTOR b1181 FOR TRANSISTOR BC 149 B 2042A 2SK376 DDD3710 B1181
    Text: SANYO SEMICONDUCTOR CORP 2SK376 1BE » 1 I ’ N-Channel Junction Silicon Field-Effect Transistor 2037 1432A i m U l h 0D0S3fl0 I Capacitor Microphone Impedance Conversion Applications Features . Especially suited for use in audio, telephone capacitor microphones.


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    PDF 0D053Ã 2SK376 2SK376 B1181 B1252 JIS B1181 d 2037 transistor capacitor 0.22mA TRANSISTOR b1181 FOR TRANSISTOR BC 149 B 2042A DDD3710

    2SK156

    Abstract: VLN 2003a HT 12E APPLICATION sj 2025 sj 2038 TRANSISTOR BC 313
    Text: SANYO Xtm CONPULTOR COKF 2SK156 r - ' x i - x z ' N-Channel Junction Silicon Field-Effect Transistor 2037 Capacitor Microphone Impedance Conversion Applications 540F A B S O L U T E M AXIMUM RA TIN G S/Ta = 2 5°C unit Gate drain voltage vdgo Gate current


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    PDF 2SK156 B1181 B1252 0DUB722 2SK156 VLN 2003a HT 12E APPLICATION sj 2025 sj 2038 TRANSISTOR BC 313

    B1335A

    Abstract: D2033A D1855A D2037 B1186A 2SC457 2sb1335a d2038 B 1186a B1085A
    Text: 1 rarisiston, ¡ m m • Power Transistors • TQ-220, TO-22QFP, HRT Types Vctc C O LLE CTOR TO EMITTER VOLTAGE V 60 50 T 100 120 200 160 300 0 1 400 2SC4505 PSD 1562 15 ■ 2S D 1562A 2SB 1085 2S B 1085A 2S D 1763 | 2SD 1763A 2SB 1186 | 2SB 1186A 2SD 2033


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    PDF TQ-220, O-22QFP, 2SC4505 SDp901' 2SC4354 2SD2061 2SB1496 2SB1334" 2SC457 2SA1634 B1335A D2033A D1855A D2037 B1186A 2sb1335a d2038 B 1186a B1085A

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP 2037 Advance Information The RF Line VHF Power Transistor 35 W — 225 MHz VHF POWER TRANSISTOR NPN SILICON The TP2037 has been sp e cifica lly desig n ed and characterized fo r 12.5 V o p e ra tio n in 225 MHz h ig h pow e r a m p lifie rs.


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    PDF TP2037

    sef820

    Abstract: SEF822 2088 DIODE
    Text: S 6 S-THÔMSON .D7E » H 7121537 OOiaO'-l'ï b | “ 73C 1 7 5 4 6 HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N'Channel enhancement, mode Pow er-M os field effect transistors. ABSOLUTE M A X IM U M RATINGS P«0,


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    PDF SEF820 SEF821 SEF822 SEF823 00V/450V 00V/450V 300/is, C-271 2088 DIODE

    2SC2621

    Abstract: ic sj 2038 TRANSISTOR ML5 sj 2038 12006A sj 2025 marking ML5 ic sj 2025 TO-220AA marking 2009a
    Text: 2SC2621 NPN Triple Diffused Planar Silicon Transistor 2009A Color TV Chroma Output Applications E675A Absolute Maxi m u m Ratings at T a = 2 5 C Collector to Base Voltage CBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Collector Current


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    PDF 2SC2621 200VtIE 0021J 2SC2621 ic sj 2038 TRANSISTOR ML5 sj 2038 12006A sj 2025 marking ML5 ic sj 2025 TO-220AA marking 2009a

    b1181

    Abstract: 2043A TRANSISTOR b1181 transistor 9-t b1252 TRANSISTOR darlington fp 1016 2SD1914 DDD3710 IC 2453 FSIM
    Text: SANYO SEMICONDUCTOR CORP 2SD1914 NPN Epitaxial Planar Silico n Darlington Transistor 204 3 A - Driver Applications . 2453 Applications . Motor drivers, printer hammer drivers, relay drivers, voltage regulator control Features . Darlington connection . High DC current gain


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    PDF 2SD1914 B1181 B1252 2043A TRANSISTOR b1181 transistor 9-t b1252 TRANSISTOR darlington fp 1016 DDD3710 IC 2453 FSIM

    4227t

    Abstract: 2043A TRANSISTOR R 2453
    Text: SANYO SEMICONDUCTOR CORP 2SD1914 NPN Epitaxial Planar Silico n Darlington Transistor 204 3 A - Driver Applications . 2453 Applications . Motor drivers, printer hammer drivers, relay drivers, voltage regulator control Features . Darlington connection . High DC current gain


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    PDF 2SD1914 IS-126 1S-126A IS-20MA 4227t 2043A TRANSISTOR R 2453

    500 DKZ

    Abstract: TFK 4 314 valvo TELEFUNKEN* U 111 B str w 6052 tfk 1007 tfk 014 Schwingquarz Telefunken TFK S 417 T valvo transistoren
    Text: TELEPO RT VI ein Sprechfunkgerät für das 80-, 100- und 150/160-MHz-Band Kanalraster 50, 25 und 20 kHz Beschreibung A H /B s -V 300 657/1 Teile 1, 2, 3, 4, 5, 6 Nachdruck, auch auszugsweise, verboten 765 kn Mo Technische W eiterentwicklung Vorbehalten Inhalt


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    PDF 150/160-MHz-Band 500 DKZ TFK 4 314 valvo TELEFUNKEN* U 111 B str w 6052 tfk 1007 tfk 014 Schwingquarz Telefunken TFK S 417 T valvo transistoren

    2SK686

    Abstract: ODDS445 t37h
    Text: SANYO SEMICONDUCTOR 15E D I CORP T-3^-|/ 2SK686 N-Channel M O S Silicon Field-Effect Transistor 2052A <£&m 7 cH7G7ti~ DODS441 High Speed Power Switching Applications Features Low-on resistance, very high-speed switching, converters Absolute H a x l M Ratings at Ta=25°C


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    PDF 2SK686 0DGB752 ODDS445 t37h

    a 1757 transistor

    Abstract: ti 8ak JIS G3141 2SC1755 2SC1756 2SC1757 transistors a 1757 a 1201 sanyo
    Text: SANYO SEMICONDUCTOR 1EE CORP D I 7^707^ □ □ □ 4 1 4 5 5 | T - Z Z - O V 1756 , 1757 2010A 2013 2012 NPN Triple Diffused Planar Silico n Transistors TV Chroma Output, Video Output, Sound Output Applications 4290 These 2SC1755,1756,1757 are different only from their packages.


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    PDF ODDH14S T-zz-07 2SC1755 0DGB752 a 1757 transistor ti 8ak JIS G3141 2SC1756 2SC1757 transistors a 1757 a 1201 sanyo

    2SC693

    Abstract: sj 2025 sj 2038 2SC1570 2sc693 sanyo ic sj 2038 JIS G3141 of HT 12E AT 2005A
    Text: S AN Y O SEMICONDUCTOR CORP 12E D I T V W 07t. O O O m tO 2SC693 T'li-is' NPN Pianar Silicon Transistor 2003A ; ' " * * •> t - Low Frequency, Low IMoise Am p Applications . 2S7E Absolute M a x i i » Eatings at Ta=25°C Colleotor to Base Voltage CBO Collector to Emitter Voltage 7CE0


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    PDF 2SC693 D414D 0DGB752 2SC693 sj 2025 sj 2038 2SC1570 2sc693 sanyo ic sj 2038 JIS G3141 of HT 12E AT 2005A

    2SA1210

    Abstract: 2SC2912 FP 1018 JIS G3141 DDD3710 BC PNP Transistor
    Text: SA N YO SEMICONDUCTOR CORP 12 E D I T 2SA1210 1 - 3 l \ PN P / npn Epitaxial P la n a r S ilic o n Transistors 2009A 2SC2912 - Q 7 * ^ 7 Q7b Q003775 0 High Voltage Switching, A F 150W Predriver Applications 780C Features • Adoption of F B E T process • High breakdown voltage


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    PDF 2SA1210 0DGB752 2SA1210 2SC2912 FP 1018 JIS G3141 DDD3710 BC PNP Transistor