transistor d 1556
Abstract: d 1556 transistor CQ 629 2SC1556 f632 transistor 2sc
Text: 5/U D :/N PN ie5>*S/>W 7U -:f-fêh5>î>a5> À SILICON NPN EPITAXIAL PLANAR TRANSISTOR O U H F * * * * « * !« o U H F« jtm m 2SC 1556 ü it X m m INDUSTRIAL APPLICATIONS U n i t in mm O UHF Band Medium Power A m p l i f i e r A p p l i c a t i o n s O UHF Band O s c i l l a t o r A p p l i c a t i o n s
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22dBm
2SC1556
transistor d 1556
d 1556 transistor
CQ 629
2SC1556
f632
transistor 2sc
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Untitled
Abstract: No abstract text available
Text: Proximity Sensors Inductive Stainless Steel Housing Type EI, M30, High Noise Immunity • Stainless steel housing, cylindrical • Diameter: M30 • Sensing distance: 9 mm • Hysteresis: 25 - 45% • Power supply: 24 VDC • Output: Transistor PNP, make switching
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Untitled
Abstract: No abstract text available
Text: ANALOG DEVICES 24-Bit X - A ADC PRELIMINARY TECHNICAL DATA FEATURES: A D 1555 4th Order 2 -A M o d ulato r Large Dynam ic Range: 118 dB m in, 121 dB typical @ 1 ms 118 dB typical @ 0.5 ms Low Distortion: -116 dB m ax, -120 dB typical Sam pling Rate a t 256 kSPS
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24-Bit
56nVrm
AD1555/AD1556
1555/AD
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Untitled
Abstract: No abstract text available
Text: SEP 2 d t IM S G 1 7 3 high colour palette-DAC with “PixMix"” mos Advance information The information in this document is subject to change PCIk PixMix VSync Blank Iref FEATURES FEATURES • Compatible with VGA standard IMS G171/176 • Triple 6-bit DACs with output comparators
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G171/176
SC1148x
256x18
80MHz
44-pin
28-pin
16-bit
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AN1556
Abstract: RB140 AN-138 ISL28127 Mark Alexander
Text: Application Note 1556 Author: Don LaFontaine Building an Accurate SPICE Model for Low Noise, Low Power Precision Amplifiers Abstract In today's fast moving competitive markets, more and more customers are requesting SPICE models to run comprehensive circuit simulations. System engineers are
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AN-138,
ISL28127,
ISL28227
FN6633
com/data/fn/fn6633
AN1556
RB140
AN-138
ISL28127
Mark Alexander
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D 1556
Abstract: D1555 z-a capacitor 1556A BW 3010 T D 1555
Text: ANALOG DEVICES 24-Bit Z-A ADC Preliminary Technical Information FEATURES AD1555 4th Order E-A M odulator Large Dynam ic Range: 118 dB guaranteed @ 405 Hz 121 dB typical 118 dB typical @ 810 Hz Low Distortion: -116 dB guaranteed 120 dB typical Sam pling Rate of 256 ksps
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AD1555
AD1556
24-Bit
AD1555/AD1556
AD1555/6
28-LEAD
P-28A)
44-LEAD
D 1556
D1555
z-a capacitor
1556A
BW 3010 T
D 1555
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transistor d 1556
Abstract: d 1556 transistor transistor af 126 AF279S transistor 1555 UHF pnp transistor AF279 PNP UHF transistor flE35b05 AF 279
Text: ESC D • flE35bG5 OODMO?^ 7 m S I Z G ' PNP Germanium UHF Transistor A F 279 S SIEMENS A K T I E N G E S E L L S C H A F 25C 04079 D - — fo r in p u t stages up to 9 0 0 M H z fly ' A n ' AF 279 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package similar to T 0 119. This transistor is particularly
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flE35b05
T0119.
q62701-f87
y12bl
transistor d 1556
d 1556 transistor
transistor af 126
AF279S
transistor 1555
UHF pnp transistor
AF279
PNP UHF transistor
AF 279
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d 1556 transistor
Abstract: No abstract text available
Text: • bbS3T31 0025fc.Qfl ISM « A P X N AMER PHILIPS/DISCRETE BSS64 b?E 3> HIGH VOLTAGE N-P-N TRANSISTORS Silicon planar epitaxial transistor in a microminiature plastic envelope intended for application in thick and thin-film circuits. This transistor is intended fo r high-voltage general purpose and switching
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bbS3T31
0025fc
BSS64
002Sbll
d 1556 transistor
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transistor d 1556
Abstract: d 1556 transistor BSS64
Text: • bbS3T31 D025fci0ô ISM BIAPX N AUER PHILIPS/DISCRETE BSS64 b?E D HIGH VOLTAGE N-P-N TRANSISTORS Silicon planar epitaxial transistor in a m icrom iniature plastic envelope intended fo r application in thick and th in -film circuits. This transistor is intended fo r high-voltage general purpose and switching
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D025fci0Ã
BSS64
7Z77661
transistor d 1556
d 1556 transistor
BSS64
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Untitled
Abstract: No abstract text available
Text: NSL12AW High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com Features: • • • • High Current Capability (3 A) High Power Handling (Up to 650 mW) Low VCE(s) (170 mV Typical @ 1 A) Small Size
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NSL12AW
NSL12AW
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t559
Abstract: No abstract text available
Text: SIEMENS BFP 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7,5GHz F = 1 .5 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!
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900MHz
Q62702-F1378
OT-143
fl235bG5
53SLDS
t559
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pm4020
Abstract: AF279 p21b AF279S AF240 900 mhz germanium diode Germanium Q60106-X240 S400 d 1556 transistor
Text: f 25C D • flS3SbOS 00DMQ7b 1 H S I E 6 PIMP Germanium RF Transistor - SIEMENS AKTIENGESELLSCHAF A F240 for m ixer and oscillator stages up to 9 0 0 M H z AF 2 4 0 is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads
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23SbOS
AF240
Q60106-X240
-13J5Ã
TambS45Â
-CC80
y12bl
pm4020
AF279
p21b
AF279S
900 mhz germanium diode
Germanium
Q60106-X240
S400
d 1556 transistor
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transistor D 1557
Abstract: d 1556 transistor transistor d 1556 1557 b transistor transistor 1555
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding, DC/DC and AC/DC
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PHP12N10E
T0220AB
transistor D 1557
d 1556 transistor
transistor d 1556
1557 b transistor
transistor 1555
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vqe 24 d
Abstract: vqe 24 e VQE 23 E vqe 23 vqe 14 E VQE 21 d vqe 23 f vqe 23 c IGT6D20 IGT6E20
Text: IGT6D20,E20 20 AMPERES 400,500 VOLTS EQUIV. Rd S ON = 0.12 0 Insulated Gate Bipolar Transistor This IG T" Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and
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IGT6D20
vqe 24 d
vqe 24 e
VQE 23 E
vqe 23
vqe 14 E
VQE 21 d
vqe 23 f
vqe 23 c
IGT6E20
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sd1555
Abstract: s2055af 4 s2055af S2055 2SD142 2SD871 2sd820
Text: TOSHIBA 6 D eflection System 6-1 D eflection System * : U nd er developm ent 6-2 V ertical Deflection O u tp u t T ransistors '^ ^ -v ^ ^ P a ck ag e Characteristics V C E O = 160 V l c = 1A V c e o = 150 V *c* 1-5A TO -1 2 6 TO -2 0 2 2 SC 2 3 83 2SA1Q 13
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2SA940
2SC3296
2SA1304
2SC3621
2SA1408
S2000A
S2818A
2S01279
S2055AF
2SD2095
sd1555
s2055af 4
S2055
2SD142
2SD871
2sd820
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Untitled
Abstract: No abstract text available
Text: Diagonal 6.0mm Type 1/3 Progressive Scan CCD Image Sensor for Color Cameras ICX445AQA Description The ICX445AQA is a diagonal 6.0mm (Type 1/3) interline CCD solid-state image sensor with a square pixel array and 1.25M effective pixels. Progressive scan enables all pixel signals to be output separately within 1/22.5 second.
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ICX445AQA
ICX445AQA
AS-A16
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icx445
Abstract: ICX445AQA asa16 ICX44 h1a transistor transistor BUD 129 2SC4250 2SC5095 CM500S CXD3400N
Text: Diagonal 6.0mm Type 1/3 Progressive Scan CCD Image Sensor for Color Cameras ICX445AQA Description The ICX445AQA is a diagonal 6.0mm (Type 1/3) interline CCD solid-state image sensor with a square pixel array and 1.25M effective pixels. Progressive scan enables all pixel signals to be output separately within 1/22.5 second.
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ICX445AQA
ICX445AQA
075mm.
24pin
icx445
asa16
ICX44
h1a transistor
transistor BUD 129
2SC4250
2SC5095
CM500S
CXD3400N
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ICX445al
Abstract: icx445 ICX44
Text: Diagonal 6.0mm Type 1/3 Progressive Scan CCD Image Sensor for B/W Cameras ICX445ALA Description The ICX445ALA is a diagonal 6.0mm (Type 1/3) interline CCD solid-state image sensor with a square pixel array and 1.25M effective pixels. Progressive scan enables all pixel signals to be output separately and sequentially within 1/22.5 second.
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ICX445ALA
ICX445ALA
075mm.
24pin
ICX445al
icx445
ICX44
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Untitled
Abstract: No abstract text available
Text: Diagonal 6.0mm Type 1/3 Progressive Scan CCD Image Sensor for B/W Cameras ICX445ALA Description The ICX445ALA is a diagonal 6.0mm (Type 1/3) interline CCD solid-state image sensor with a square pixel array and 1.25M effective pixels. Progressive scan enables all pixel signals to be output separately and sequentially within 1/22.5 second.
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ICX445ALA
ICX445ALA
AS-A16
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SGH30N60RUF
Abstract: Transistor GE 67
Text: IGBT SGH30N60RUF Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT RUF series provides low conduction and switching losses as well as short circuit ruggedness. RUF series is designed for the applications such as motor control, UPS and general
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SGH30N60RUF
SGH30N60RUF
Transistor GE 67
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icx445
Abstract: Sony ICX445ALA ICX445ALA h1a transistor asa16 ICX445al transistor H1A 2SC4250 2SC5095 CM500S
Text: Diagonal 6.0mm Type 1/3 Progressive Scan CCD Image Sensor for B/W Cameras ICX445ALA Description The ICX445ALA is a diagonal 6.0mm (Type 1/3) interline CCD solid-state image sensor with a square pixel array and 1.25M effective pixels. Progressive scan enables all pixel signals to be output separately and sequentially within 1/22.5 second.
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ICX445ALA
ICX445ALA
075mm.
24pin
icx445
Sony ICX445ALA
h1a transistor
asa16
ICX445al
transistor H1A
2SC4250
2SC5095
CM500S
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SGH30N60RUF
Abstract: No abstract text available
Text: SGH30N60RUF Short Circuit Rated IGBT General Description Features Fairchild's RUF series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control,
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SGH30N60RUF
SGH30N60RUF
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RUFD
Abstract: IGBT 60A Diode UJ igbt 30A SGH30N60RUFD DSA003144
Text: SGH30N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control,
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SGH30N60RUFD
RUFD
IGBT 60A
Diode UJ
igbt 30A
SGH30N60RUFD
DSA003144
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Untitled
Abstract: No abstract text available
Text: SGH30N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control,
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SGH30N60RUFD
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